• Journal of the Korean Ceramic Society
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• v.26 no.2
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• pp.195-200
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• 1989

The Silica-Carbon mixture was made with addition of carbon black in the composition which monodispersed spherical fine silica was formed by the hydrolysis of ethylsilicate, mole ratio of Carbon/Alkoxide was 3.1 and $\beta$-SiC powder was synthesized by reacting this mixture at 1,350~1,50$0^{\circ}C$ in Ar atmosphere. The results of this study are as follow : (1) The purity of synthesized $\beta$-SiC powder was above 99.98% and it was in cubic modification with lattice constant of 4.3476$\AA$. (2) The rate-controlling steps varied with the reaction temperature for the syntehsis of $\beta$-SiC in this study ; nucleation and growth of $\beta$-SiC at 1,350~1,40$0^{\circ}C$, interfacial reaction at 1,45$0^{\circ}C$ and diffusion described by Jander Equation at 1,50$0^{\circ}C$. (3) When the rate-determining step was nucleation and growth, the activation energy was about 87.8kcal/mol.

• Solar Energy
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• v.1 no.1
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• pp.30-36
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• 1981

Pool Boiling heat transfer from controlled arrays of artificial nucleation sites was studied experimentally. Distilled water were boiled from artificial sites of uniform size, shape and spacing, drilled in superfinished copper horizontal surfaces at site density of 16, 25, 36, 49, 64, 81, 100 per $2.25cm^2$. The results confirm the boiling heat transfer from artificial sites can be improved by increasing the site density N/A or temperature difference ${\Delta}T$ or both. Following experimental correlation were developed for predicting the heat transfer rate from the heating surface which has artificial sites. $$q/A = C(T_s - T_{sat})^{1.811}(N/A)^{0.41}$$

• Journal of Power System Engineering
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• v.10 no.3
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• pp.51-57
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• 2006

The effect of grain size on corrosion resistance and high temperature oxidation behavior was studied in 22Cr-15Ni-5W super austenitic stainless steels for desulfurization equipment as a heat power station. In the high temperature oxidation test, oxidation rate was increased as the temperature increased from $600^{\circ}C\;to\;800^{\circ}C$. In vapor, oxidation rate was faster than that in air. Because the vapor was inhibited nucleation of $Cr_2O_3$ film. And the high temperature oxidation resistance at $600^{\circ}C{\sim}800^{\circ}C$ was excellent from all specimens and specimen of the smallest grain size was the most excellent. Because increasing of diffusion course through the grain-boundary was promoted nucleation and growth of $Cr_2O_3$ film. In the test temperature at $600^{\circ}C{\sim}800^{\circ}C$, Cr rich round particle oxide was formed in air, whereas Fe rich needle type oxide was developed in vapor.

• Journal of the Korean Ceramic Society
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• v.26 no.4
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• pp.479-486
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• 1989

According to the phase diagram, 6Bi2O3.GeO2 composition melts congruently at 93$0^{\circ}C$ and forms a stable ${\gamma}$-6Bi2O3.GeO2 crystal phase below the melting point. But when the melt of this composition was cooled at a rate 1-15$0^{\circ}C$/min without tapping by a glass rod or impurity addition, a metastable $\delta$-6Bi2O3.GeO2 crystal phase was formed. It is due to that as the nucleation energy barrier of $\delta$-6Bi2O3.GeO2 crystals, which have more open and defective structure, is lower than that of ${\gamma}$-6Bi2O3.GeO2 crystals. When impurities or ${\gamma}$-6Bi2O3.GeO2 crystals existed in the melt, stable ${\gamma}$-6Bi2O3.GeO2 crystal phase was formed at various cooling rate. It is because of that the impurities or the ${\gamma}$-6Bi2O3.GeO2 crystals role as a seed crystal and as a result the nucleation energy barrier of ${\gamma}$-6Bi2O3.GeO2 crystals is lowered.

• Journal of Korea Foundry Society
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• v.41 no.3
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• pp.235-240
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• 2021

We present the effect of the critical cooling rate during rapid solidification on the nucleation of precipitates in an Fe₇₅B₁₃P₅Nb₂Hf₁C₄ (at.%) alloy. The thermophysical properties of the rapidly solidified Fe₇₅B₁₃P₅Nb₂Hf₁C₄ liquids, which were obtained at various cooling rates with various sizes of gas-atomized powder during a high-pressure inert gas-atomization process, were evaluated. The cooling rate of the small-particle powder (≤20 ㎛) was 8.4×10⁵ K/s, which was 13.5 times faster than that of the large-particle powder (20 to 45 mm; 6.2×10⁴ K/s) under an atomized temperature. A thermodynamic calculation model used to predict the nucleation of the precipitates was confirmed by the microstructural observation of MC-type carbide in the Fe₇₅B₁₃P₅Nb₂Hf₁C₄ alloy. The primary carbide phase was only formed in the large-particle gas-atomized powder obtained during solidification at a slow cooling rate compared to that of the small-particle powder.

• Journal of the Korean institute of surface engineering
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• v.46 no.1
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• pp.29-35
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• 2013

The effect of DC bias on the growth of nanocrystalline diamond films on silicon substrate by microwave plasma chemical vapor deposition has been studied varying the substrate temperature (400, 500, 600, and $700^{\circ}C$), deposition time (0.5, 1, and 2h), and bias voltage (-50, -100, -150, and -200 V) at the microwave power of 1.2 kW, working pressure of 110 torr, and gas ratio of Ar/1%$CH_4$. In the case of low negative bias voltages (-50 and -100 V), the diamond particles were observed to grow to thin film slower than the case without bias. Applying the moderate DC bias is believed to induce the bombardment of energetic carbon and argon ions on the substrate to result in etching the surfaces of growing diamond particles or film. In the case of higher negative voltages (-150 and -200 V), the growth rate of diamond film increased with the increasing DC bias. Applying the higher DC bias increased the number of nucleation sites, and, subsequently, enhanced the film growth rate. Under the -150 V bias, the height (h) of diamond films exhibited an $h=k{\sqrt{t}}$ relationship with deposition time (t), where the growth rate constant (k) showed an Arrhenius relationship with the activation energy of 7.19 kcal/mol. The rate determining step is believed to be the surface diffusion of activated carbon species, but the more subtle theoretical treatment is required for the more precise interpretation.

• Korean Journal of Materials Research
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• v.4 no.5
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• pp.566-573
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• 1994

The diamond synthesis by combustion flame method is considerably affected by the substrate surface temperature and its distribution which are mainly controlled by the ratio of mixed gas, $O_2/C_2H_2$. In order to elucidate the role of gas ratio in the diamond synthetic process by combustion flame, under various gas ratios (R=0.87~0.98; R=ratio of flow-rate of $O_2/C_2H_2$ gas) the substrate temperature was measured by using thermal video system and the morphological change of diamond crystals was analysed by using SEM, Raman spectroscope, and X-ray diffraction method. With increasing the gas ratio, i.e., decreasing the hydrocarbon content, the nucleation rate of diamond crystal was lowerd. It was also found that the morphology of diamond crystals changed from the cubo-octahedron type consisting of (100), (111) plane to the octahedron type of (111) plane. The increase of the substrate temperature consistently resulted in the increase of the nucleation rate as well as the growth rate of diamond crystals in which the surface of diamond crystal dominantly consisting of (100) plane.

• Journal of the Korean institute of surface engineering
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• v.50 no.5
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• pp.352-359
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• 2017

The growth of nanocrystalline diamond films on a p-type poly silicon substrate was studied using microwave plasma chemical vapor deposition method. A 6 mm thick poly silicon plate was mirror polished and scratched in an ultrasonic bath containing slurries made of 30 cc ethanol and 1 gram of diamond powders having different sizes between 5 and 200 nm. Upon diamond deposition, the specimen scratched in a slurry with the smallest size of diamond powder exhibited the highest diamond particle density and, in turn, fastest diamond film growth rate. Diamond deposition was carried out applying different DC bias voltages (0, -50, -100, -150, -200 V) to the substrate. In the early stage of diamond deposition up to 2 h, the effect of voltage bias was not prominent probably because the diamond nucleation was retarded by ion bombardment onto the substrate. After 4 h of deposition, the film growth rate increased with the modest bias of -100 V and -150 V. With a bigger bias condition(-200 V), the growth rate decreased possibly due to the excessive ion bombardment on the substrate. The film grown under -150V bias exhibited the lowest contact angle and the highest surface roughness, which implied the most hydrophilic surface among the prepared samples. The film growth rate increased with the apparent activation energy of 21.04 kJ/mol as the deposition temperature increased in the range of $300{\sim}600^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.27 no.3
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• pp.401-411
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• 1990

Deposition of diamond films on Si(100) from the mixtures of methane and hydrogen were investigated using hot W filament CVD method. The nucleation density could be increased thousandfold by surface treatment with SiC powder. Upon oxygen addition to the mixture, crystal facets became developed more clearly by selectively removing non-diamond carbons, but the film growth rate generally decreased. However, at a very high methane content(e.g. 10%), a small amount of oxygen addition has resulted in an increase in the film deposition rate presumably by promotion of methane decomposition. When the gas pressure was varied, the growth rate exhibited a maxiumum at around 20torr and the film crystallinity steadily improved with the pressure increase. The observed variation of the growth rate by oxygen addition was discussed in terms of its role in the pyrolysis and the subsequent gas phase reactions.

• Journal of the Korean Ceramic Society
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• v.22 no.3
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• pp.53-59
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• 1985

Nucleation and crystallization of $\beta$-eucryptite in a glass of molecular percentage composition Li2O.Al2O3.2SiO2 are studied. The glasses are made by quenching of the melts from 143$0^{\circ}C$ to room temperature. Heat-treatment for nucleation and crystal growth are caried out at various temperature in the range between 50$0^{\circ}C$ and 80$0^{\circ}C$ with different duration of time. The amounts of crystallization are estimated by the method of x-ray powder diffraction. As the results a time-temperature-transformation relation for crystallization is derived. The maximum rate of crystallization is observed at about 75$0^{\circ}C$ from the T-T-T-curve while the crystallization temperature is detected at 67$0^{\circ}C$ by DTA measurement. The crystallization temperature moved to 62$0^{\circ}C$ by adding 5 weight percents of TiO2 and it moved to 78$0^{\circ}C$ by adding 2 weight percents of V2O5. The crystallization temperature moved to 62$0^{\circ}C$ by adding 5 weight percent of TiO2 it moved to 78$0^{\circ}C$ by adding 2 weight percents of V2O5 The activation energy for crystallization from the pure glass is calculated as 68 Kcal/mol and it varied to 53 Kcal/mol and 110Kcal/mol when 5 weight percents of TiO2 and weight percents of V2O5 are added respectively.