• 한국초전도ㆍ저온공학회논문지
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• 제15권4호
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• pp.34-38
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• 2013

According to the increase of electric consumption nowadays, power system becomes complicated. Due to this, the size of single line-to-ground fault from power system also increases to have many problems. In order to resolve these problems effectively, an Superconducting Fault Current Limiter(SFCL) was proposed and continuous study has been done. In this paper, an SFCL was combined to the neutral line of a transformer. An superconductivity has the characteristics of zero resistance below critical temperature. because of this, SFCL has nearly zero resistance. so we connecting SFCL to neutral line will not only have any loss in the normal operation but also have the less burden of electric power because of only limiting the initial fault current. We analyzed the characteristics of current, voltage according to the changes of turn ratio of 3 phase system in case of combinations of an SFCL to the neutral line. It was confirmed that the limiting rate of initial fault current by the increase of turn ratio was reduced.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.278-278
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• 2011

수소 중성입자빔을 이용한 silicon etching은 기존의 silicon etching 공정 가스(Fluorine이나 Chlorine 계열의 가스) 사용 시 배출되는 유해 가스로 인한 지구 온난화 방지 및 폐기물 처리에 추가적인 비용이 발생하지 않는 친환경 etching 공정이다. 본 연구에 사용된 수소 중성입자빔을 발생시키기 위한 플라즈마 소스는 낮은 압력에서 높은 플라즈마 밀도를 발생시킬 수 있는 ECR 플라즈마 소스를 사용하였으며 중성입자빔의 에너지를 조절할 수 있는 중성화판과 플라즈마로부터의 전하손상을 방지할 수 있어 charge free 공정을 가능하게 하는 Limiter로 구성되어 있다. 본 연구에서는 플라즈마 밀도, 공정 압력 그리고, 중성입자빔의 에너지를 조절하여 수소 중성입자빔을 이용한 poly-crystal silicon과 a-Si:H 간의 etch rate와 etching selectivity를 관찰하였다.

• 한국자동차공학회논문집
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• 제17권3호
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• pp.117-126
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• 2009

A Common-Rail Direct Injection(CRDI) system for high speed diesel engines was developed to meet reductions of noise and vibration, and emission regulations. In this study, CRDI system analysis model which includes fuel and mechanical sub-systems was developed using commercial software, AMESim in order to predict characteristics for various fuel injection components. Each component which constructs system was modeled and verified by sub-model of AMESim obtained characteristics curves of each components. The parameter sensitivity analysis such as throttle size, injection rate, plunger displacement, supply pressure of fuel injection for system design were carried out by the analysis.

• 한국전산유체공학회:학술대회논문집
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• 한국전산유체공학회 1999년도 춘계 학술대회논문집
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• pp.186-191
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• 1999

An Euler solver is developed to predict accurate aerodynamic data such as lift coefficient, drag coefficient, and moment coefficient. The conservation law form of the compressible Euler equations are used in the generalized curvilinear coordinates system. The Euler solver uses a finite volume method and the second order Roe's flux difference splitting scheme with min-mod flux limiter to calculate the fluxes accurately. An implicit scheme which includes the boundary conditions is implemented to accelerate the convergence rate. The multi-block grid is integrated into the flow solver for complex geometry. The flowfields are analyzed around NACA 0012 airfoil in the cases of $M_{\infty}=0.75,\;\alpha=2.0\;and\;M_{\infty}=0.80,\;\alpha=1.25$. The numerical results are compared with other numerical results from the literature. The final goal of this research is to prepare a robust and an efficient Navier-Stokes solver eventually.

• 한국정보통신학회논문지
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• 제6권4호
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• pp.499-504
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• 2002

본 논문에서는 열잡음과 부분대역 재밍잡음 그리고 인접한 8개의 비트 패턴에 대한 심볼간 간섭을 고려하여 FH/CPFSK 시스템의 성능을 분석하였다. 이와 같은 FH/CPFSK 시스템의 분석을 위한 파라메타 비트율(bit rate)과 변조지수를 사용하였으며, 차동검파기(Differential Detector)를 이용한 최적 수신 상관함수 제시하고, FH/CPFSK 시스템과 FH/BFSK 시스템을 비교평가 하였다. 그 결과, 근사식과 실제식의 비트 오류 확률은 높은 신호대 잡음비에서 거의 일치함을 알 수 있었고, 재밍율에 따른 성능은 차동검파를 사용한 FH/CPFSK 시스템이 리미터-변별기를 사용한 FH/CPFSK 시스템 보다 3dB 성능이 떨어지나 FH/CPFSK 시스템보다는 2dB 성능이 우수함을 입증하였다.

• 한국통신학회논문지
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• 제8권2호
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• pp.76-81
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• 1983

PCM符號가 NRZ-L인 binary data를 5次 Bessel low-pass filter를 通하여 傳送하는 telemetry systemn에 對하여 FM方式으로 RF link를 構成하고 liniter-discriminator로 複調하였을 경우에 digital通信system의 性能評價에 重要한 bit誤差確率을 SNR에 對하여 解析的으로 檢討하였다. 實際로 設計에 적용한 telemetry system에서 bit rate를 140kHz, 變調前 filter의 f를 100kHz, 送信機의 最大周波數編移 2f를 300kHz로 設計하였을 때 f0T=0.7 및 h=2ft=2이며 SNR이 10dB일 때 bit誤差確率은 10으로 計算되었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.162-162
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• 2016

We present multifunctional indium tin oxide (ITO) thin films formed at room temperature by a normal sputtering system equipped with a plasma limiter which effectively blocks the bombardment of energetic negative oxygen ions (NOIs). The ITO thin film possesses not only low resistivity but also high gas diffusion barrier properties even though it is deposited on a plastic substrate at room temperature without post annealing. Argon neutrals incident to substrates in the sputtering have an optimal energy window from 20 to 30 eV under the condition of blocking energetic NOIs to form ITO nano-crystalline structure. The effect of blocking energetic NOIs and argon neutrals with optimal energy make the resistivity decrease to $3.61{\times}10-4{\Omega}cm$ and the water vapor transmission rate (WVTR) of 100 nm thick ITO film drop to $3.9{\times}10-3g/(m2day)$ under environmental conditions of 90% relative humidity and 50oC, which corresponds to a value of ~ 10-5 g/(m2day) at room temperature and air conditions. The multifunctional ITO thin films with low resistivity and low gas permeability will be highly valuable for plastic electronics applications.

• International Journal of Aeronautical and Space Sciences
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• 제8권1호
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• pp.32-45
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• 2007

The T-50 advanced supersonic jet trainer employs the Relaxed Static Stability (RSS) concept to improve the aerodynamic performance while the flight control system stabilizes the unstable aircraft and provides adequate handling qualities. The T-50 flight control laws employ a proportional-plus-integral type controller based on a dynamic inversion method in longitudinal axis and a proportional type controller based on a blended roll system with simple roll rate feedback and beta-betadot feedback system. These control laws are verified by flight tests with various maneuver set flight envelopes and the control laws are updated to resolve flight test issues. This paper describes several concepts of flight control laws used in T-50 to resolve those flight test issues. Control laws for solving the roll-off problem during pitch maneuver in asymmetric loading configurations, improving the departure resistance in negative angle of attack conditions and enhancing the fine tracking performance in air-to-air tracking maneuvers are described with flight test data.

• 대한전기학회논문지:전기기기및에너지변환시스템부문B
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• 제49권11호
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• pp.737-741
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• 2000

We fabricated resistive superconducting fault current limiters (SFCL) based on YBCO thin films grown on 2-inch diameter $Al_2O_3$ substrates. Two SFCLs with nearly identical properties were connected in series to investigate simultaneous quench. There was a slight difference in the rate of voltage increase between two SFCL units when they were operated independently. This difference resulted in significantly imbalanced power dissipation between the units. This imbalance was removed by connecting a shunt resister to an SFCL in parallel. The appropriate values of shunt resistance were 80 ${\Omega}$ at 75 $V_rms$ and 110 ${\Omega}$ at 120 $V_rms$, respectively. Increased power input at high voltages also reduced the initial imbalance in power dissipation, but with increase in film temperature to higher than 200 K.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.288-289
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• 2011

Indium Tin Oxide (ITO) is a typical highly Transparent Conductive Oxide (TCO) currently used as a transparent electrode material. Most widely used deposition method is the sputtering process for ITO film deposition because it has a high deposition rate, allows accurate control of the film thickness and easy deposition process and high electrical/optical properties. However, to apply high quality ITO thin film in a flexible microelectronic device using a plastic substrate, conventional DC magnetron sputtering (DMS) processed ITO thin film is not suitable because it needs a high temperature thermal annealing process to obtain high optical transmittance and low resistivity, while the generally plastic substrates has low glass transition temperatures. In the room temperature sputtering process, the electrical property degradation of ITO thin film is caused by negative oxygen ions effect. This high energy negative oxygen ions(about over 100eV) can be critical physical bombardment damages against the formation of the ITO thin film, and this damage does not recover in the room temperature process that does not offer thermal annealing. Hence new ITO deposition process that can provide the high electrical/optical properties of the ITO film at room temperature is needed. To solve these limitations we develop the Magnetic Field Shielded Sputtering (MFSS) system. The MFSS is based on DMS and it has the plasma limiter, which compose the permanent magnet array (Fig.1). During the ITO thin film deposition in the MFSS process, the electrons in the plasma are trapped by the magnetic field at the plasma limiters. The plasma limiter, which has a negative potential in the MFSS process, prevents to the damage by negative oxygen ions bombardment, and increases the heat(-) up effect by the Ar ions in the bulk plasma. Fig. 2. shows the electrical properties of the MFSS ITO thin film and DMS ITO thin film at room temperature. With the increase of the sputtering pressure, the resistivity of DMS ITO increases. On the other hand, the resistivity of the MFSS ITO slightly increases and becomes lower than that of the DMS ITO at all sputtering pressures. The lowest resistivity of the DMS ITO is $1.0{\times}10-3{\Omega}{\cdot}cm$ and that of the MFSS ITO is $4.5{\times}10-4{\Omega}{\cdot}cm$. This resistivity difference is caused by the carrier mobility. The carrier mobility of the MFSS ITO is 40 $cm^2/V{\cdot}s$, which is significantly higher than that of the DMS ITO (10 $cm^2/V{\cdot}s$). The low resistivity and high carrier mobility of the MFSS ITO are due to the magnetic field shielded effect. In addition, although not shown in this paper, the roughness of the MFSS ITO thin film is lower than that of the DMS ITO thin film, and TEM, XRD and XPS analysis of the MFSS ITO show the nano-crystalline structure. As a result, the MFSS process can effectively prevent to the high energy negative oxygen ions bombardment and supply activation energies by accelerating Ar ions in the plasma; therefore, high quality ITO can be deposited at room temperature.