• Journal of Welding and Joining
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• v.30 no.6
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• pp.120-125
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• 2012

Because ships and offshore structures have very large dimensions and complicated shapes, it is difficult to determine the deformation or internal stress in the structure by simple lab tests. Thus, a rigorous analysis by using the computer simulation technology is essential for obtaining their distortions by considering the entire production process characteristics. The rapid development of computer technology made it possible to analyze the heat transfer phenomena, deformation and phase transformation in the welded joint. For large shell structures, shell elements modeling contributed primarily to this development. But if a welding is done by multi-pass, shell elements whose thickness are unchangeable can hard to describe the local situation. Recently, it was researched how to introduce the imaginary temperature for V grooved multi-layer butt welding in strain-boundary method (a kind of shrinkage methodologies). In the present study, we formulated the imaginary temperature for the double bevel and double V groove by considering the thickness change of each pass through the bead and the thickness directions simultaneously and also demonstrated the feasibility of the formula by applying it to the thermal distortion analysis of the erection process of crane pedestal.

• Journal of the Korean Society for Heat Treatment
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• v.29 no.6
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• pp.277-283
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• 2016

The influences of cooling pressure of quenching process on the mechanical properties such as hardness, impact endurance and anti-thermal fatigue behaviour of STD61 steel were investigated. The specimens were heat-treated using a vacuum furnace in which they were austenitized at $1,030^{\circ}C$ for 1hour under the pressure of $10^{-3}$ torr and cooled with quenching gas of various pressure, i.e. 1, 2 and 6 bar. According to the observation on the specimens prepared with quenching from austenizing temperature, the mechanical properties of the samples with higher quenching pressure were better than those of prepared at lower quenching pressure. The samples prepared with high quenching pressure showed the more homogeneous microstructure with finer carbides. The size of carbides such as VC and (Fe, Cr)C in quenched specimens decreased with increasing gas quenching pressure. It is considered that the rapid cooling with pressure may restrict the formation and growth of carbide.

• Transactions of Materials Processing
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• v.18 no.4
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• pp.310-316
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• 2009

Micro lens array(MLA) is widely used in information technology(IT) industry fields for various applications such as a projection display, an optical power regulator, a micro mass spectrometer and for medical appliances. Recently, MLA have been fabricated and developed by using a reflow method having the processes of micro etching, electroplating, micro machining and laser local heating. Laser thermal relaxation method is introduced in marking of microdots on the surface of densified glass. In this paper, we have proposed a new direct fabrication process using UV laser local thermal-expansion(UV-LLTE) and investigated the optimal processing conditions of MLA on the surface of negative photo-resist material. We have also studied the 3D shape of the micro lens obtained by UV laser irradiation and the optimal process conditions. And then, we made chrome mold by electroplating. After that, we made MLA using chrome mold by hot embossing processing. Finally, we have measured the opto-physical properties of micro lens and then have also tested the possibility of MLA applications.

• 한국태양에너지학회:학술대회논문집
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• 2009.04a
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• pp.230-234
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• 2009

It is significant technique to increase competitiveness that solar cells have a high energy conversion efficiency and cost effectiveness. When making high efficiency crystalline Si solar cells, evaporated Ti/Pd/Ag contact system is widely used in order to reduce the electrical resistance of the contact fingers. However, the evaporation process is no applicable to mass production because high vacuum is needed. Furthermore, those metals are too expensive to be applied for terrestrial applications. Ni/Cu/Ag contact system of silicon solar cells offers a relatively inexpensive method of making electrical contact. Ni silicide formation is one of the indispensable techniques for Ni/Cu/Ag contact sytem. Ni was electroless plated on the front grid pattern, After Ni electroless plating, the cells were annealed by RTP(Rapid Thermal Process). Ni silicide(NiSi) has certain advantages over Ti silicide($TiSi_2$), lower temperature anneal, one step anneal, low resistivity, low silicon consumption, low film stress, absence of reaction between the annealing ambient. Ni/Cu/Ag metallization scheme is an important process in the direction of cost reduction for solar cells of high efficiency. In this article we shall report an investigation of rapid thermal silicidation of nickel on silngle crystalline silicon wafers in the annealing range of $350-390^{\circ}C$. The samples annealed at temperatures from 350 to $390^{\circ}C$ have been analyzed by SEM(Scanning Electron Microscopy).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05a
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• pp.142-145
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• 2004

In this work, we have investigated the application of rapid thermal processing (RTP) and plasma enhanced chemical vapour deposition (PECVD) for surface passivation. Rapid thermal oxidation (RTO) has sufficiently low surface recombination velocities (SRV) $S_{eff}$ in spite of a thin oxides and short process time. The effective lifetime is increasing with an increase of the oxide thickness. In the same oxide thickness, The effective lifetime is independent on the process temperature and time. $S_{eff,max}$ is exponentially decreased with increasing oxide thickness. $S_{eff,max}$ can be reduced to 200 cm/s with only 10 nm oxide thickness. On the other hand, three different types of SiN are reviewed. SiN1 layer has a thickness of about 72 nm and a refractive index of 2.8. Also, The SiN1 has a high passivation quality. The effective lifetime and SRV of 1 $\Omega$ cm Float zone (FZ) silicon deposited with SiN1 is about 800 s and under 10 cm/s, respectively. The SiN2 is optimized for the use as an antireflection layer since a refractive index of 2.3. The SiN3 is almost amorphous silicon caused by less contents of N2 from total process. The effective lifetime on the FZ 1 ${\Omega}cm$ is over 1000 ${\mu}s$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.4
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• pp.312-317
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• 2000

Ferroelectric S $r_{0.9}$/B $i_{2.1}$/T $a_{2}$/ $O_{9}$ solutions were synthesized using sol-gel process in which strontinum ethoxide bismuth ethoxide trantalum ethoxide were used a s startring materials. SBT thin films were coated on Pt/Ti/ $SiO_2$/Si substrates by spin-coating. rapid thermal annealing (RTA) was used to promote crystallization. Thin films were annealed at $700^{\circ}C$ for 1 hr in an oxygen atmosphere. This temperature is about 10$0^{\circ}C$ lower than the usual annealing temperature for SBT thin films. Pt top-electrode was deposited by sputtering and thin films were post-annealed at $700^{\circ}C$ for 30 min. to enhance electrical properties. As the RTA temperature increased the higher 2 $P_{r}$ values were obtained. At RTA temperature being 78$0^{\circ}C$ remanent polarization of S $r_{0.9}$/B $i_{2.1}$/T $a_{2}$/ $O_{9}$ thin film was 7.73 $\mu$C/cm $_2$ and the leakage current density was 1.14$\times$10$^{-7}$ A/c $m^2$ at 3 V. As RTA temperature increased the breakdown voltage was decreased. It is considered that the low-field breadown is caused by the rough surface of SBT films and forming bismuth metal in SBT thin films.films.lms.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.15 no.5
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• pp.399-405
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• 1990

Rapid Thermal Process(RTP) has been used to precisely control and study the reaction rate for the formation of refractory titanuium silicide. Samples were prepared by sputtering deposition layer of titanium on n-type, poly-deposit silicon wafers. The process were then sujected to a matrix of rapid time-temperature profile under nitrgen, argon gas ambient to precisely control the silicide formation. Reacted films were analyzed by the sheet resistance measursrement, SEM, ASR and X-ray diffraction. Results were shown that the resistivity of the silicide films are below 20u-cm and the thickness of silicide films are about two times than that of as-deposited titanium films. Silicidation ambient was likely to happen at the same tamperature-time condition for argon and nitrogen gas.

• Korean Journal of Computational Design and Engineering
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• v.9 no.2
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• pp.133-142
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• 2004

CAMPfonn2D is a Finite Element Method (FEM) based process simulation system designed to analyze two dimensional (2D) flow of various metal forming processes. It enables designers to analyze metal forming processes on the computer rather than the shop floor using trial and error and provides vital information about material and thermal flow during the forming process to facilitate the design of products. CAMPfonn2D can be used by companies, research institutes and industrial applications to analyze forging, extrusion, drawing, heading, upsetting and many other metal forming processes. Also, process simulation using CAMPfonn2D can be instrumental in cost, quality and delivery improvements at leading companies. Today's competitive pressures require companies to take advantage of every tool for rapid manufacturing of well-designed product. So, the preprocessor of simulation program must be easy to use to speed-up design. In this paper, we introduce new version of Preprocessor and show how easy to use it. And, Preprocessor will prove itself to be easy and extremely effective.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.187-188
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• 2000

The conventional firing process method for the transparent dielectric layer in PDP Technology has disadvantages of low through put, high power consumption and large process area. We propose the rapid thermal scinterring (RTS) method as new process method to overcome these disadvantage characteristics. As the experimental result of this method, the optic transmittance(wavelength : 600nm) rate of transparent dielectric layer was more improved than conventional furnaces under the optimized gas supplying. Further, it was certified this method had the best conditions on the firing process of the PDP transparent dielectric layer.

• Korean Journal of Materials Research
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• v.3 no.1
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• pp.7-11
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• 1993

Abstract Oxidation kinetics of silicon oxide films formed by rapid thermal oxidizing Si substrate in $N_2$O ambient studied. The data on $N_2$0 oxidation shows that the interfacial nitrogen-rich layers results in oxide growth in the parabolic regime by impeding oxidant diffusion to the Si$O_2$-Si interface even for ultrathin oxides. The activation energy of parablic rate constant, B, is about 1.5 eV, and the energy increses with oxide thickness.