• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.985-988
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• 2004

The carrier lifetime of boron doped Cz silicon samples after light induced degradation could be improved by optimized rapid thermal processing (RTP). The important five different parameters varied in order to investigate which parameter is important for the stable lifetime after light induced degradation, $\tau_d$. The Plateau temperature and the Plateau time influenced on the lifetime after light induced degradation. Especially, the Plateau temperature showed a strong influence on the stable lifetime. The optimal plateau temperature is approximately $900^{\circ}C$ t for a plateau time of 120 s. The stable lifetime increased from $15\mu}s$ to $25.5{\mu}s$. The normalized defect concentration, $N_t^*$, decreased from $0.06{\mu}s^{-1}$ to $0.037{\mu}s^{-1}$ by RTP-process.

• Transactions of Materials Processing
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• v.23 no.4
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• pp.238-243
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• 2014

Recently, magnesium alloys have been widely used in the automotive, aerospace and electronics industries with the advantages of high specific strength, excellent machinability, high electrical conductivity, and high thermal conductivity. Deep drawn magnesium alloys not only meet the demands environmentally and the need for lighter products, but also can lead to remarkably improved productivity and more rapid qualification of the product The current study reports on a failure prediction procedure using finite element modeling (FEM) and a ductile fracture criterion and applies this procedure to the design of a deep drawing process. Critical damage values were determined from a series of uniaxial tensile tests and FEM simulations. They were then expressed as a function of strain rate and temperature. Based on the plastic deformation histories obtained from the FEM analyses of the warm drawing process and the critical damage value curves, the initiation time and location of fracture were predicted. The proposed method was applied to the process design for fabrication of a Mg automotive compressor case and verified with experimental results. The final results indicate that a Mg case part 39% lighter than an Al die casting part can be produced without any defects.

• Korean Journal of Materials Research
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• v.9 no.9
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• pp.932-936
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• 1999

4NH(sub)3+$3O_2$$\longrightarrow$$2N_2$+$6H_2$O 의 화학반응식을 가지며$ O_2$ 및 $H_2$O를 산화제로 하는 $NH_3$/$O_2$산화의 성장모델을 세웠으며, 그 결과 Fick의 제 1 법칙을 기초로 하는 건식 및 습식 산화메카니즘으로 이해되는 Deal-Grove의 산화막 성장모델과 유사한 결과가 도출되었다. 이 성장모델에 의하면 산화제$ O_2$ 및 $H_2$O가 상호보완적으로 산화에 영향을 미치므로 산화온도 뿐 아니라 $NH_3$/O$_2$의 유량비도 산화율을 결정한다. rapid thermal processing(RTP)에 의한 산화막 성장실험으로 본 연구에서 제안하는 성장모델을 확인하였으며, NH$_3$분자의 분해에 의해 발생하는 N 원자의 산화막 내부확산을 secondary ion mass spectroscopy(SIMS)로 확인하였으며, Auger electron spectroscopy (AES) 측정결과 N 원자의 존재는 무시할만한 수준이었다.

• Current Photovoltaic Research
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• v.3 no.3
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• pp.97-100
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• 2015

The kesterite $Cu_2ZnSnSe_4$ (CZTSe) thin film solar cells were synthesized by selenization of sputtered Cu/Sn/Zn metallic precursors on Mo coated soda lime glass substrate in Ar atmosphere. Cu/Sn/Zn metallic precursors were deposited by DC magnetron sputtering process with 30 W power at room temperature. As-deposited metallic precursors were placed in a graphite box with Se pellets and selenized using rapid thermal processing furnace at various temperature ($480^{\circ}C{\sim}560^{\circ}C$) without using a toxic $H_2Se$ gas. Effects of Selenization temperature on the morphological, crystallinity, electrical properties and cell efficiency were investigated by field emission scanning electron microscope (FE-SEM) and X-ray diffraction (XRD), J-V measurement system and solar simulator. Further details about effects of selenization temperature on CZTSe thin films will be discussed.

• Journal of the Society of Naval Architects of Korea
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• v.46 no.2
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• pp.203-217
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• 2009

The researches on the development of composite material propeller with outstanding damping effects have been actively attempted for the reduction of radiation noise of underwater vehicle propeller. Composite material suitable for the flexible propeller has the following advantages, such as high specific strength and specific stiffness, low thermal expansion coefficient, high resistance against environmental deterioration, low possibility of corrosion due to cavitation, nonoccurrence of rapid fracture due to fatigue, easy molding of complicated shape, easy repair maintenance and low production costs, etc. For the confirmation of optimal fiber array structures of composite material for the production of the flexible propeller blades, in this study, mechanical characteristics of its specimens according to materials were obtained and structural characteristics of propeller blade were also examined according to materials and stacking fiber arrays.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.1881-1883
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• 2005

In this study, PZT thin films were fabricated using sol-gel Processing onto $Si/SiO_2/Ti/Pt$ substrates. PZT sol with different Zr/Ti ratio(20/80, 30/70, 40/60, 52/48) were prepared, respectively. The films were fabricated by using the spin-coating method on substrates. The films were heat treated at $450^{\circ}C$, $650^{\circ}C$ by rapid thermal annealing(RTA). The preferred orientation of the PZT thin films were observed by X-ray diffraction(XRD), and Scanning electron microscopy(SEM). All of the resulting PZT thin films were crystallized with perovskite phase. The fine crystallinity of the films were fabricated. Also, we found that the ferroelectric properties from the dielectric constant of the PZT thin films were over 600 degrees, P-E hysteresis constant. And the leakage current densities of films were lower than $10^{-8}\;A/cm^2$. It is concluded that the PZT thin films by sol-gel process to be convinced of application for ferroelectric memory device.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1562-1564
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• 2003

In this study, PZT thin films were fabricated using sol-gel processing onto Si/$SiO_2$/Ti/Pt substrates. PZT sol with different Zr/Ti ratio(20/80, 30/70, 40/60, 52/48) were prepared, respectively. The films were fabricated by using the spin-coating method on substrates. The films were heat treated at $450^{\circ}C,\;650^{\circ}C$ by rapid thermal annealing(RTA). The preferred orientation of the PZT thin films were observed by X-ray diffraction(XRD), and Scanning electron microscopy(SEM). All of the resulting PZT thin films were crystallized with perovskite phase. The fine crystallinity of the films were fabricated. Also, we found that the ferroelectric properties from the dielectric constant of the PZT thin films were over 600 degrees, P-E hysteresis constant. And the leakage current densities of films were lower than $10^{-8}A/cm^2$. It is concluded that the PZT thin films by sol-gel process to be convinced of application for ferroelectric memory device.

• Environmental Engineering Research
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• v.10 no.1
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• pp.38-44
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• 2005

Electro-thermal production of white phosphorus(WP, P4) generates substantial amount of highly toxic phossy water and sludges. Because of their high phosphorus contents and lack of reliable processing technology, large tonnages of these hazardous wastes have accumulated from current and past operations in the United States. In this study, two different methods for treatment of phosphorus sludge were investigated. These were bulk removal of WP by physical separation(froth flotation) and transformation of WP to oxyphosphorus compounds by air oxidation in the sludge medium. Kerosene, among other collectors, resulted in selective flotation of WP from the associated mineral gangue. Solvent action of kerosene occurring on the WP surface(by rendering WP particles hydrophobic) might produce the high selectivity of WP. The WP recovery in the froth was 79.3% from a sludge assaying 34.2% of WP. In the oxidation study, air gas was dispersed in the sludge medium by the rapid rotation of the impeller blades. The high level of sludge agitation intensity caused a fast completion of the oxidation reactions and it resulted in the high percentage conversion of WP to PO4-3 with PO3-3 making up almost all portion of oxyphosphorus compounds. The WP analysis on the treated sludge showed that supernatant solution and solid residue contained an average of 4.2 μg/L and 143 ppm respectively from the sludge containing about 26 g of WP. Further investigation will be required on operational factors to better understand the processes and achieve an optimum condition.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.6
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• pp.468-472
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• 2011

Conductive $SrMoO_3$ thin films were fabricated by RF magnetron sputtering with the powder-type sputtering target, and annealed for crystallization. When RTP (rapid thermal processing) in vacuum was applied, the fabricated thin films showed the mixed phases of $SrMoO_3$ and $SrMoO_4$, but $SrMoO_3$ phase could be promoted by the lowering of the working pressure during deposition. In order to eliminate $O_2$ gas during deposition and annealing, further lowering of the working pressure and furnace annealing in hydrogen atmosphere were tried. With the optimization of the deposition and annealing conditions, the thin film with nearly single-phase of $SrMoO_3$ was obtained, and it showed good electrical conduction properties with a low resistivity of $2.5{\times}10^{-3}{\Omega}{\cdot}cm$ at room temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.3
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• pp.286-291
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• 2023

Perovskite materials are promising candidates for next-generation optoelectronic devices owing to their outstanding external quantum efficiency, high color purity, and ability to tune the light emission wavelength. However, conventional thermal annealing processes caused the degradation of perovskite, resulting in poor optoelectronic properties and a short lifetime. Herein, we propose a laser-induced recrystallization of perovskite thin film to enhance its light-emitting properties. Laser-induced recrystallization process was performed using rapid and instantaneous laser heating, which successfully induced grain growth of the perovskite material. The laser processing conditions were thoroughly optimized based on theoretical calculations and various material analyses such as x-ray diffraction, scanning electron microscope, and photoluminescence spectroscopy.