• Title/Summary/Keyword: Random Process

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Optimization Methodology for Sales and Operations Planning by Stochastic Programming under Uncertainty : A Case Study in Service Industry (불확실성하에서의 확률적 기법에 의한 판매 및 실행 계획 최적화 방법론 : 서비스 산업)

  • Hwang, Seon Min;Song, Sang Hwa
    • Journal of Korean Society of Industrial and Systems Engineering
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    • v.39 no.4
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    • pp.137-146
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    • 2016
  • In recent years, business environment is faced with multi uncertainty that have not been suffered in the past. As supply chain is getting expanded and longer, the flow of information, material and production is also being complicated. It is well known that development service industry using application software has various uncertainty in random events such as supply and demand fluctuation of developer's capcity, project effective date after winning a contract, manpower cost (or revenue), subcontract cost (or purchase), and overrun due to developer's skill-level. This study intends to social contribution through attempts to optimize enterprise's goal by supply chain management platform to balance demand and supply and stochastic programming which is basically applied in order to solve uncertainty considering economical and operational risk at solution supplier. In Particular, this study emphasizes to determine allocation of internal and external manpower of developers using S&OP (Sales & Operations Planning) as monthly resource input has constraint on resource's capability that shared in industry or task. This study is to verify how Stochastic Programming such as Markowitz's MV (Mean Variance) model or 2-Stage Recourse Model is flexible and efficient than Deterministic Programming in software enterprise field by experiment with process and data from service industry which is manufacturing software and performing projects. In addition, this study is also to analysis how profit and labor input plan according to scope of uncertainty is changed based on Pareto Optimal, then lastly it is to enumerate limitation of the study extracted drawback which can be happened in real business environment and to contribute direction in future research considering another applicable methodology.

Korean Semantic Role Labeling Using Case Frame Dictionary and Subcategorization (격틀 사전과 하위 범주 정보를 이용한 한국어 의미역 결정)

  • Kim, Wan-Su;Ock, Cheol-Young
    • Journal of KIISE
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    • v.43 no.12
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    • pp.1376-1384
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    • 2016
  • Computers require analytic and processing capability for all possibilities of human expression in order to process sentences like human beings. Linguistic information processing thus forms the initial basis. When analyzing a sentence syntactically, it is necessary to divide the sentence into components, find obligatory arguments focusing on predicates, identify the sentence core, and understand semantic relations between the arguments and predicates. In this study, the method applied a case frame dictionary based on The Korean Standard Dictionary of The National Institute of the Korean Language; in addition, we used a CRF Model that constructed subcategorization of predicates as featured in Korean Lexical Semantic Network (UWordMap) for semantic role labeling. Automatically tagged semantic roles based on the CRF model, which established the information of words, predicates, the case-frame dictionary and hypernyms of words as features, were used. This method demonstrated higher performance in comparison with the existing method, with accuracy rate of 83.13% as compared to 81.2%, respectively.

Identifying Sensitive Components and Analyzing Reliability Process to Output Characteristic for an EAFD Circuit System According to Changes of Internal Component Values (전자식 점화안전장치 회로 시스템 내부 소자 변화에 따른 민감 소자 확인 및 출력 특성에 대한 신뢰성 분석 프로세스)

  • Lim, Tae Heung;Byun, Gangil;Jang, Seung-gyo;Back, Seungjun;Son, Youngkap;Choo, Hosung
    • Journal of the Korea Institute of Military Science and Technology
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    • v.21 no.5
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    • pp.697-703
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    • 2018
  • In this paper, we analyzed the operation of the ignition circuit for electronic arm and fire device(EAFD), and investigated the sensitive elements of the circuit system. For reliability analysis, the EAFD ignition circuit was modeled using the PSpice simulation tool, and the output results of the circuit were examined by changing the tolerance of each circuit element. Monte Carlo simulation was used by maintaining the values of the observed sensitive elements at ${\pm}10%$ of the original values and adjusting the values of the other components according to a random distribution. The histogram results of the output peak currents and pulse widths were represented by Weibull and Burr type XII function fittings in three cases(element values are +10 %, 0 %, -10 % of original). For the output peak currents, mean values were 1.0028, 1.0034, and 1.0050, where the variance values were calculated as 0.0398, 0.0396, and 0.0290 using the Weibull function fitting, respectively. For pulse widths, the mean values of 0.9475, 0.9907, and 1.0293 with the variance values of 0.0260, 0.0251, and 0.0238 were obtained using the Burr Type XII function fittings.

Investigation on Resistive Switching Characteristics of Solution Processed Al doped Zn-Tin Oxide film

  • Hwang, Do-Yeon;Park, Dong-Cheol;Jo, Won-Ju
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.180-180
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    • 2015
  • Solution processed Resistive random access memory (ReRAM)은 간단한 공정 과정, 고집적도, 저렴한 가격, 대면적화 플라즈마 데미지 최소화 등의 장점으로 차세대 비휘발성 메모리로 써 많은 관심을 받고 있으며, 주로 high-k 물질인 HfOx, TiOx, ZnO 가 이용 된다. IGZO와 ZTO와 같은 산화물 반도체는 높은 이동도, 대면적화, 넓은 밴드갭으로 인하여 투명한 장점으로 LCDs (Liquid crystal displays)에 이용 가능하며, 최근에는 IGZO와 ZTO에서 Resistive Switching (RS) 특성을 확인한 논문이 보고되면서 IGZO와 ZTO를 ReRAM의 switching medium와 TFT의 active material로써 동시에 활용하는 것에 많은 관심을 받고 있다. 이와 같은 산화물 반도체는 flat panel display 회로에 TFT와 ReRAM의 active layer로써 집적가능 하며 systems-on-panels (SOP)에 적용 가능하다. 하지만 IGZO 보다는 ZTO가 In과 Ga을 포함하지 않기 때문에 저렴하다. 그러므로 IGZO를 대신하는 물질로 ZTO가 각광 받고 있다. 본 실험에서는 ZTO film에 Al을 doping하여 메모리 특성을 평가하였다. 실험 방법으로는 p-type Si에 습식산화를 통하여 SiO2를 300 nm 성장시킨 기판을 사용하였다. 그리고 Electron beam evaporator를 이용하여 Ti를 10 nm, Pt를 100 nm 증착 한다. 용액은 Zn와 Tin의 비율을 1:1로 고정한 후 Al의 비율을 0, 0.1, 0.2의 비율로 용액을 각각 제작하였다. 이 용액을 이용하여 Pt 위에 spin coating방법을 이용하여 1000 rpm 10초, 6000 rpm 30초의 조건으로 AZTO (Al-ZnO-Tin-Oxide) 박막을 증착한 뒤, solvent 및 불순물 제거를 위하여 $250^{\circ}C$의 온도로 30분 동안 열처리를 진행하였다. 이후 Electron beam evaporator를 이용하여 top electrode인 Ti를 100 nm 증착하였다. 제작된 메모리의 전기적 특성은 HP 4156B semiconductor parameter analyzer를 이용하여 측정하였다. 측정 결과, AZTO (0:1:1, 0.1:1:1, 0.2:1:1)를 이용하여 제작한 ReRAM에서 RS특성을 얻었으며 104 s이상의 신뢰성 있는 data retention특성을 확인하였다. 그리고 Al의 비율이 증가할수록 on/off ratio가 증가하고 endurance 특성이 향상되는 것을 확인하였다. 결론적으로 Al을 doping함으로써 ZTO film의 메모리 특성을 향상 시켰으며 AZTO film을 메모리와 트랜지스터의 active layer로써 활용 가능할 것으로 기대된다.

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Fabrication of Resistive Switching Memory based on Solution Processed AlOx - PMMA Blended Thin Film

  • Sin, Jung-Won;Baek, Il-Jin;Jo, Won-Ju
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.181.1-181.1
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    • 2015
  • 용액 공정을 이용한 Resistive random access memory (ReRAM)은 간단한 공정 과정, 대면적화, 저렴한 가격 등의 장점으로 인해 큰 관심을 받고 있으며, HfOx, TiOx, AlOx 등의 산화물이 ReRAM 절연 막으로 주로 연구되고 있다. 더 나아가 최근에는 organic 물질을 메모리 소자로 사용한 연구가 보고되고 있다. 이는 경제적이며, wearable 또는 flexible system에 적용이 용이하다. 그럼에도 불구하고, organic 물질을 갖는 메모리 소자는 기존의 산화물 소자에 비해 열에 취약하며 전기적인 특성과 신뢰성이 우수하지 못하다는 단점을 가지고 있다. 이를 위한 방안으로 본 연구에서는 AlOx - polymethylmethacrylate (PMMA) blended thin film ReRAM을 제안하였다. 이는 organic물질의 전기적 특성을 개선시킬 뿐 아니라, inorganic 물질을 wearable 소자에 적용했을 때 발생하는 crack과 같은 기계적 물리적 결함을 해결할 수 있는 새로운 방법이다. 먼저, P-type Si 위에 습식산화를 통하여 SiO2 300 nm 성장시킨 기판을 사용하여 electron beam evaporation으로 10 nm의 Ti, 100 nm의 Pt 층을 차례로 증착하였다. 그리고 PMMA 용액과 AlOx 용액을 초음파를 이용하여 혼합한 뒤, 이 용액을 Pt 하부 전극 상에서 spin coating방법으로 1000 rpm 10초, 5000 rpm 30초의 조건으로 증착하였다. Solvent 및 불순물 제거를 위하여 150, 180, $210^{\circ}C$의 온도로 30 분 동안 열처리를 진행하였고, shadow mask를 이용하여 상부 전극인 Ti를 sputtering 방식으로 100 nm 증착하였다. 150, 180, $210^{\circ}C$로 각각 열처리한 AlOx - PMMA blended ReRAM의 전기적 특성은 HP 4156B semiconductor parameter analyzer를 이용하여 측정하였다. 측정 결과 제작된 소자 전부에서 2 V이하의 낮은 동작전압, 안정된 DC endurance (>150cycles), 102 이상의 높은 on/off ratio를 확인하였고, 그 중 $180^{\circ}C$에서 열처리한 ReRAM은 더 높은 on/off ratio를 갖는 것을 확인하였다. 결론적으로 baking 온도를 최적화하였으며 AlOx - PMMA blended film ReRAM의 우수한 메모리 특성을 확인하였다. AlOx-PMMA blended film ReRAM은 organic과 inorganic의 장점을 갖는 wearable 및 system용 비휘발성 메모리소자에 적용이 가능한 경제적인 기술로 판단된다.

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Generation of Freak Waves in a Numerical Wave Tank and Its Validation in Wave Flume (수치파 수조에서의 극치파 생성과 수조실험을 통한 검증 연구)

  • Jeong, Seong-Jae;Park, Seong-Wook
    • Journal of the Society of Naval Architects of Korea
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    • v.46 no.5
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    • pp.488-497
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    • 2009
  • The freak wave, also known as New-Year-Wave in the north Atlantic, is relatively large and spontaneous ocean surface wave that can sink even large ships and destroy maritime structures. To understand oceanic conditions that develop freak waves, we simulated and generated two versions of scale-downed waves (1:64 and 1:42) in a numerical wave tank and compared the results with the experiment in wave flume. Both of the breaking and non-breaking waves were generated in the simulation. The numerical simulation was implemented based on the finite volume method and a genetic optimization algorithm. Random values were assigned as the initial values for the parameter in the control function, which produced signals representing the motion of wave-maker. The same signal obtained from the optimization process was used for both of the simulation and the experiment. By varying the object function and restrictions of the simulation, a best profile of design wave was selected based on the characteristics, height and period of simulated waves. Results showed that the simulation and experiment with the scale of 1:42 agreed better with freak waves in the natural condition. The presented simulation method will contribute to saving the time and cost for conducting subsequent response analyses of motion under freak waves in the course of the model test for ship and maritime structure.

Preparation and Characterization of MFIS Using PT/BFO/$HFO_2$/Si Structures

  • Kim, Kwi-Junga;Jeong, Shin-Woo;Han, Hui-Seong;Han, Dae-Hee;Jeon, Ho-Seung;Im, Jong-Hyun;Park, Byung-Eun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.80-80
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    • 2009
  • Recently, multiferroics have attracted much attention due to their numorous potentials. In this work, we attemped to utilize the multiferroics as an alternative material for ferroelectrics. Ferroelectric materials have been stadied to ferroelectric random access memories, however, some inevitable problems prevent it from inplementation. multiferroics shows a ferroelectricity and has low process temperature $BiFeO_3$(BFO) films have good ferroelectric properties but poor leakage characterization. Thus we tried, in this work, to adopt $HfO_2$ insulating layer for metal-ferroelectric-insulator-semiconductor(MFMIS) structure to surpress to leakage current. $BiFeO_3$(BFO) thin films were fabricared by using a sol-gel method on $HfO_2/Si$ structure. Ferroelectric BFO films on a p-type Si(100)wafer with a $HfO_2$ buffer layer have been fabricated to form a metal-ferroelectric-insulator-semiconductor (MFIS) structure. The $HfO_2$ insulator were deposited by using a sol-gel method. Then, they were carried out a rapid thermal annealing(RTA) furnace at $750\;^{\circ}C$ for 10 min in $N_2$. BFO films on the $HfO_2/Si$ structures were deposited by sol-gel method and they were crystallized rapid thermal annealing in $N_2$ atomsphere at $550\;^{\circ}C$ for 5 min. They were characterized by atomic force microscopy(AFM) and Capacitance-voltage(C-V) curve.

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InSbTe phase change materials deposited in nano scaled structures by metal organic chemical vapor deposition (MOCVD법에 의해 나노급 구조 안에 증착된 InSbTe 상변화 재료)

  • Ahn, Jun-Ku;Park, Kyung-Woo;Cho, Hyun-Jin;Hur, Sung-Gi;Yoon, Soon-Gil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.52-52
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    • 2009
  • To date, chalcogenide alloy such as $Ge_2Sb_2Te_5$(GST) have not only been rigorously studied for use in Phase Change Random Access Memory(PRAM) applications, but also temperature gap to make different states is not enough to apply to device between amorphous and crystalline state. In this study, we have investigated a new system of phase change media based on the In-Sb-Te(IST) ternary alloys for PRAM. IST chalcogenide thin films were prepared in trench structure (aspect ratio 5:1 of length=500nm, width=100nm) using Tri methyl Indium $(In(CH_3)_4$), $Sb(iPr)_3$ $(Sb(C_3H_7)_3)$ and $Te(iPr)_2(Te(C_3H_7)_2)$ precursors. MOCVD process is very powerful system to deposit in ultra integrated device like 100nm scaled trench structure. And IST materials for PRAM can be grown at low deposition temperature below $200^{\circ}C$ in comparison with GST materials. Although Melting temperature of 1ST materials was $\sim 630^{\circ}C$ like GST, Crystalline temperature of them was ~$290^{\circ}C$; one of GST were $130^{\circ}C$. In-Sb-Te materials will be good candidate materials for PRAM applications. And MOCVD system is powerful for applying ultra scale integration cell.

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Electrochemical Detection of $17{\beta}-estradiol$ by using DNA Aptamer Immobilized Nanowell Gold Electrodes

  • Kim, Yeon-Seok;Jung, Ho-Sup;Lee, Hea-Yeon;Kawai, Tomoji;Gu, Man-Bock
    • 한국생물공학회:학술대회논문집
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    • 2005.04a
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    • pp.88-92
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    • 2005
  • Aptamer is the single-stranded oligonucleotide which binds to various target molecules such as proteins, peptides, lipids and small organic molecules with high affinity and specificity. DNA aptamers specific for the $17{\beta}-estradiol$ were selected by SELEX (Systematic Evolution of Ligands by EXponential enrichment) process from a random DNA library. These DNA aptamers have a high affinity to $17{\beta}-estradiol$ as an endocrine disrupting chemical. Nanowell and $200{\mu}m$ gold electrode were used as substrate for DNA aptamer immobilization and electrochemical analysis. Especially, nanowell gold electrode was fabricated by e-beam lithography. The size of single nanowell is 130nm and 40,000 nanowells were deposited on one gold electrode. The immobilization method was based on the interaction between the biotinylated aptamer and streptavidin deposited on gold electrode previously. Immobilization procedure was optimized by surface plasma resonance (SPR) and electrochemical analysis. After the immobilization of DNA aptamer on streptavidin modified gold electrode, $17{\beta}-estradiol$ solution was treated on aptamer immobilized gold electrode. The current of gold electrode was decreased by the binding of $17{\beta}-estradiol$ to DNA aptamer immobilized on gold electrode. However, in negative control experiments of 1-aminoanthraquinone and 2-methoxynaphthalene, the current was rarely decreased. And more sensitive data was obtained from nanowell gold electrode comparing with $200{\mu}m$ gold electrode.

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ANALYSIS OF PORCELAIN SURFACE ROUGHNESS POLISHED BY VARIOUS TECHNIQUE (활택방법에 따른 도재표면의 거칠기 비교)

  • Lee, Kyu-Young;Lee, Chung-Hee;Jo, Kwang-Hun
    • The Journal of Korean Academy of Prosthodontics
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    • v.36 no.3
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    • pp.506-513
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    • 1998
  • This study was designed to compare the smoothness by glazing method with that by polishing method after 48 specimens of Ceramco II block, one of porcelain materials used for PFM, were baked according to the manufacturer's directions. The specimens were roughened with new green stone at 15,000rpm for 30 seconds and sandblasted with $25{\mu}$aluminum oxide for 15 seconds. They were divided into 4 groups at random, and 4 groups were prepared as follows : Group I : specimens were autoglazed and overpolished with polishing system. Group II : specimens were polished with only polishing system. Group III : specimens were glazed after adding glazing liquid, vitachrom 'L'-fluid (vita zahnfabrik co. Germany) to the rough surface Group V : specimens were just autoglazed Using the surface roughness tester, Ra, Rmax. and Rz were estimated 5 times per specimen, and recording process of mean value was repeated 3 times. The results were as follows : 1. The Ra of group I and group II was lower than group III and group IV (p<001). 2. There was lower value of Rz in group I and group II than group III and group IV (p<001). 3. The Rmax of group I (overpolished with polishing system after autoglazing) and group II (polished with only polishing system) was lower than group III (glazed after adding glazing liquid) and group IV (autoglazed) (p<001). 4. There was not a statistically significant difference between group I and II and between group III and IV (p>001). 5. The roughness was increase in order of group I, II, III, IV in SEM

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