• Korean Journal of Optics and Photonics
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• v.10 no.2
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• pp.89-94
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• 1999

The 1.54 ${\mu}{\textrm}{m}$ forward and backward stimulated Raman scattering (SRS) have been studied in CH$_4$pumped by 1.06 ${\mu}{\textrm}{m}$ Nd:YAG laser. The forward and backward SRS output energy in a single pass were measured at dufferent CH$_4$pressures. Under steady state conditions, the pump input threshold energies and Raman gains in forward and backward directions were for Raman conversion at various CH$_4$pressures for a tight focusing geometry. The forward and backward slope efficiency for Raman conversion were 18% and 34% respectively. The pump input threshold energy of the backward SRS was lower than that of the forward. In backward SRS, the experimental input laser threshold and Raman gain values were in good agreement with the calculated values at different pressures of CH$_4$. The retio of the backward to the forward SRS gain was appoximately 1.4 times above 1200 psi. We obtained that the backward Raman gain coefficient was 0.32 cm/GW, and the forward Raman gain coefficient 0.23cm/GW at 1400 psi. Asymmetry of the forward and backward Raman gain is caused by the interaction between different pump intensities of each direction duting the amplification of the Stokers. The backward Raman gain is proportional to the average pump intensity. However, the forward SRS output grows by depleting the local pump intensity.

• Journal of the Optical Society of Korea
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• v.12 no.4
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• pp.288-297
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• 2008

Recent research efforts on study of silicon photonics utilizing stimulated Raman scattering have largely overlooked temperature effects. In this paper, we incorporated the temperature dependences into the key parameters governing wave propagation in silicon waveguides with Raman gain and investigated how the temperature affects the solution of the coupled-mode equations. We then carried out, as one particular application example, a numerical analysis of the performance of wavelength converters based on stimulated Raman scattering at temperatures ranging from 298 K to 500 K. The analysis predicted, among other things, that the wavelength conversion efficiency could decrease by as much as 12 dB at 500 K in comparison to that at the room temperature. These results indicate that it is necessary to take a careful account of temperature effects in designing, fabricating, and operating Raman silicon photonic devices.

• ETRI Journal
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• v.24 no.2
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• pp.81-96
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• 2002

This paper describes our design of a hybrid amplifier composed of a distributed Raman amplifier and erbium-doped fiber amplifiers for C- and L-bands. We characterize the distributed Raman amplifier by numerical simulation based on the experimentally measured Raman gain coefficient of an ordinary single mode fiber transmission line. In single channel amplification, the crosstalk caused by double Rayleigh scattering was independent of signal input power and simply given as a function of the Raman gain. The double Rayleigh scattering induced power penalty was less than 0.1 dB after 1000 km if the on-off Raman gain was below 21 dB. For multiple channel amplification, using commercially available pump laser diodes and fiber components, we determined and optimized the conditions of three-wavelength Raman pumping for an amplification bandwidth of 32 nm for C-band and 34 nm for L-band. After analyzing the conventional erbium-doped fiber amplifier analysis in C-band, we estimated the performance of the hybrid amplifier for long haul optical transmission. Compared with erbium-doped fiber amplifiers, the optical signal-to-noise ratio was calculated to be higher by more than 3 dB in the optical link using the designed hybrid amplifier.