• The Transactions of the Korean Institute of Electrical Engineers P
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• v.51 no.1
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• pp.33-38
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• 2002

In this study, the metastable state diamond thin films have been deposited on Si substrates from methane-hydrogen and oxygen mixture using microwave plasma enhanced chemical vapor deposition (MPCVD) method. Effects in experimental parameters of MPCVD including methane concentrations, oxygen additions, operating pressure, deposition time on the growth rate and crystallinity were investigated. Diamond thin film was synthesized under the following conditions: methane concentration of 0.5%(0.5sccm)~5%(5sccm), oxygen concentration of 0~80%(2.4sccm), operating pressure of 30Torr~70Torr, deposition time of 1~32hr. SEM, XRD, and Raman spectroscopy were employed to analyze the growth rate and morphology, crystallinity and prefered growth direction, and relative amounts of diamond and non-diamond phases, respectively.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.250-253
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• 2009

Effective methods for monitoring the quality of polycrystalline silicon (poly-Si) films are discussed. Raman spectroscopy is typically used to determine crystallinity of poly-Si, but this method has limitations for data gathering on large substrates for mass production of poly-Si TFT backplanes. Spectroscopic ellipsometry is proposed as an alternative for fast and simple estimation of poly-Si quality on large substrates. By using both ellipsometry and Raman spectroscopy, it is possible to determine whether the quality and uniformity of the poly-Si films meet the criteria required for mass production of TFT backplanes for AMOLED panels.

• Journal of Electrochemical Science and Technology
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• v.2 no.2
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• pp.116-123
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• 2011

Herein, a novel preparation method of highly homogeneous carbon-silicon composite materials was presented. In contrast to conventional solvent evaporation method, a milled silicon-graphite or its oxidized material were directly reacted with petroleum-derived pitch precursor. After thermal reaction under high pressure, pitch-graphite-silicon composite was prepared. Carbon-graphite-silicon composite were prepared by an air-oxidization and following carbonization. From energy dispersive spectroscopy, it was observed that small Si particles were highly embedded within carbon, which was confirmed by disappearance of Si peaks in Raman spectra. Furthermore, X-ray diffraction and Raman spectra revealed that carbon crystallinity decreased when the strongly oxidized silicon-graphite was added, which was probably due to oxygen-induced cross-linking. From the anode application in lithium ion batteries, carbon-graphite-silicon composite anode displayed a high capacity ($565\;mAh\;g^{-1}$), a good initial efficiency (68%) and an good cyclability (88% retention at 50 cycles), which were attributed to the high dispersion of Si particles within cabon. In case of the strongly oxidized silicongraphite addtion, a decrease of reversible capacity was observed due to its low crystallinity.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.9
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• pp.96-103
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• 1994

The GaAs epilayer was grown at low temperature (LT. 250.deg. C) by molecular beam epitaxy. The properties of the LTT GaAs, before and after Rapid Thermal Annealing(RTA), were analyzed by Reflection of High Energy Electron Diffraction (RHEED), Double Crystal X-ray(DCX), Raman spectroscopy, PL and Photo-Induced Current Transient Spectroscopy (PICTS). The LT GaAs before RTA, was analyzed by RHEED and DCX, with a result of an improved surface morphology under a relatively As-rich(As/Ga ratio :28) condition, and of an increased lattics parameter of 1.1 1.7% in comparison with a GaAs substrate. However DCX and Raman spectroscopy revealed that the expanded lattics parameter and the crystallinity of LT GaAs could be recovered after RTA. On the other hand, PL spectra indicated that LT GaAs after RTA showed low optical sensitivity unlike High Temperature(HT) GaAs, and that its surface morphology and crystallinity were corresponded with those of HT GaAs. Finally PICTS spectra proved the fact that low sensitivity of LT GaAs was due to the deep level defects (Ec-0.85eV) which were strogly formed by raising RTA temperature to 750.deg. C.

• Journal of the Korean institute of surface engineering
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• v.53 no.3
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• pp.109-115
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• 2020

In this study, polycrystalline diamond was synthesized by chemical vapor deposition (CVD). Diamond films were deposited on a-plane sapphire substrates while changing the concentration of methane for hydrogen (CH₄/H₂), and the concentrations of methane were 0.25, 0.5, 1, 2, 3 and 4 vol%, respectively. Crystallinity and nucleation density according to changes in methane concentration were investigated. At this time, the discharge power, vacuum pressure, and deposition time were kept constant. In order to deposit polycrystalline diamond, the sapphire substrate was etched with sulfuric acid and hydrogen peroxide (ratio 3:7), and the sapphire surface was polished for 30 minutes with 100 nm-sized nanodiamond particles. The deposited diamond thin film was analyzed by a scanning electron microscope (SEM), a Raman spectra, Atomic force microscope (AFM) and an X-ray diffractometer (XRD). By controlling the ratio of methane to hydrogen and performing appropriate pre-treatment conditions, a polycrystalline diamond thin film having excellent crystallinity and nucleation density was obtained.

• Journal of Conservation Science
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• v.37 no.6
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• pp.648-658
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• 2021

In this study, we aimed to analyze the chemical changes that occur in Korean paper in an accelerated deterioration environment of 105℃. We selected the Korean paper produced with different types of cooking agents (plant lye, Na₂CO₃) and during different manufacturing seasons (winter, summer). The degree of deterioration of the Korean paper was confirmed by measuring the brightness, yellowness, and pH level, and the degree of change in each vibrational region of cellulose as deterioration progressed through infrared (FT-IR) spectroscopy. The FT-IR analysis showed that, as deterioration progressed, the absorbance of the amorphous region in cellulose decreased, whereas the absorbance of the crystalline region slightly increased. X-Ray diffraction (XRD) analysis and Raman spectroscopy were performed to verify the changes in the crystalline and amorphous regions in cellulose indicated by the FT-IR results. Furthermore, the crystallinity index (CI) was calculated; it showed a slight increase after deterioration; therefore, CI was confirmed to follow the same trend as that observed for absorbance in the FT-IR results. In addition, as a result of Raman spectroscopic analysis, the degree of decomposition of the amorphous region in the cellulose under the manufacturing conditions was confirmed by the fluorescence measured after the deterioration.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.197-198
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• 2009

This paper describes the Raman scattering characteristics of polycrystalline (poly) 3C-SiC films, which were deposited on the thermally oxidized Si(100) substrate by the atmosphere pressure chemical vapor deposition (APCVD) method according to growth temperature. TO and LO phonon modes to 2.0m thick poly 3C-SiC deposited at $1180^{\circ}C$ were measured at 794.4 and $965.7\;cm^{-1}$ respectively. From the intensity ratio of $I_{(LO)}/I_{(TO)}$ 1.0 and the broad full width half maximum (FWHM) of TO modes, itcan be elucidated that the crystallinity of 3C-SiC forms polycrystal instead of disordered crystal and the crystal defect is small. At the interface between 3C-SiC and $SiO_2$, $1122.6\;cm^{-1}$ related to C-O bonding was measured. Here poly 3C-SiC admixes with nanoparticle graphite with the Raman shifts of D and G bands of C-C bonding 1355.8 and $1596.8\;cm^{-1}$. Using TO mode of 2.0 m thick poly 3C-SiC, the biaxial stress was calculated as 428 MPa.

• Polymer(Korea)
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• v.27 no.6
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• pp.603-608
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• 2003

Syndiotactic polystyrene (s-PS) presents a very complex polymorphic behavior depending on the sample preparation history and exhibits a solid-solid phase transition. Each different polymorphic structures of the s-PS sample were prepared by annealing the samples from room temperature to 220 $^{\circ}C$. The structural changes induced by annealing were investigated using FTIR and FT-Raman spectroscopy. Although the crystallization kinetics of s-PS are difficult to investigate with DSC due to its fast crystallization rate, it was possible to determine crystallinity changes in the s-PS sample using infrared characteristic peaks with Beer-Lambert's law.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.3
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• pp.393-399
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• 1997

H-SiC single crystals were successfully grown by the sublimation method and the optimum growth conditions were established. The grown SiC crystals were about 33 mm in diameter and 11 mm in length. The micropipe density of the polished SiC wafers was 400/$\textrm{cm}^2$, and the planar defect density was 50/$\textrm{cm}^2$. Raman spectroscopy and DCXRD analysis were used to examine the crystallinity of Acheson seeds and the 6H-SiC wafers. As a result, the crystallinity of the 6H-SiC wafers was better than that of Acheson seeds. For examination of the electrical properties of the undopped 6H-SiC wafers Hall measurements were applied. According to the measurements the carrier concentration was estimated to be $3.91{\times}10^{15}/\textrm {cm}^3$ and doping type of the undopped. 6H-SiC wafers was n-type.

• Journal of the Korean Chemical Society
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• v.48 no.1
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• pp.46-52
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• 2004

The effect of crystallinity on the structural stability of layered manganese oxide has been systematically investigated. While well-crystalline manganate was prepared by solid-state reaction-ion exchange method, nanocrystalline one was obtained by Chimie-Douce reaction at room temperature. According to micro-Raman and Mn K-edge X-ray absorption spectroscopic results, manganese ions in both the manganese oxides are stabilized in the octahedral sites of the layered lattice consisting of edge-shared MnO6 octahedra. The differential potential plot clarifies that the layered structure of nanocrystalline material is well maintained during electrochemical cycling, in contrast to the well-crystalline homologue. From the micro-Raman results, it was found that delithiation-relithiation process for well-crystalline material gives rise to the structural transition from layered to spinel-type structure. On the basis of the present experimental findings, it can be concluded that nanocrystalline nature plays an important role in enhancing the structural stability of layered manganese oxides.