• Journal of the Korean Magnetic Resonance Society
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• v.15 no.1
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• pp.40-53
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• 2011

The NMR spectra of $Li_3Rb(SO_4)_2$ crystals and their relaxation processes were investigated by using $^7Li$ and $^{87}Rb$ NMR. The relaxation rates of the $^7Li$ and $^{87}Rb$ nuclei in the crystals were found to increase with increasing temperature, and can be described by the relation $T_1^{-1}{\propto}AT^2$. The dominant relaxation mechanism for these nuclei with electric quadrupole moments is provided by the coupling of these moments to the thermal fluctuations of the local electric field gradient via Raman spin-phonon processes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.269-272
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• 1995

As methane concentration was varietal, the textures of diamond films deposited on Si(100)substrate could be observed by XRD, SEM and Raman spectroscope. As a result, O$_2$plasma etching has been useful to observe microscopic structure of diamond films by SEM. The cross section of diamond films deposited on Si(100) substrate with 4% concentration of methane to hydrogen was a polycrystal like a pillar. The diamond crystal like a pillar has been oriented to (110) surface and the high quality diamond with FWHM of Raman spectra being 3.8cm$\^$-1/ has been grown. As time goes by deposition time, the preferred orientation increases.

• Electrical & Electronic Materials
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• v.9 no.3
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• pp.270-276
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• 1996

As methane concentration was varied, the textures of diamond films deposited on Si(100)substrate were observed by XRD,SEM and Raman spectroscope. As a result, $O_{2}$ plasma etching has been useful to observe microscopic structure of diamond films by SEM. The cross section of diamond films deposited on Si(100)substrate with 4% concentration of methane to hydrogen was a polycrystal like a pillar. The diamond crystal like a pillar has been oriented to (110)surface and the high quality diamond film with FWHM of Raman spectra being 3.8 $cm^{-1}$ / has been grown. As time goes by deposition time, the preferred orientation increases

• Applied Science and Convergence Technology
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• v.24 no.3
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• pp.47-52
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• 2015

The correlation between admittance and dielectric spectroscopy of dielectric relaxation in lead scandium noibate, have been investigated. Lead scandium niobate, with composition $PbSc_{0.5}Nb_{0.5}O_3$, was prepared by conventional solid state synthesis. Conductance Y'(G), susceptance Y"(B) and capacitance C of lead scandium niobate as a function of frequency and temperature were measured. From the temperature-dependence of RLC circuit, insight into physical significance of the dielectric properties of lead scandium niobate is obtained. The relative strong frequency dependent of dielectric properties in lead scandium niobate is observed, and the phase transition occurred at a broad temperature region. Also, the value of critical exponent ${\gamma}$=1.6 showed on heating process. The long relaxation times part enlarged diffuse by conductivity effects with increasing temperature, and the ordering between $Sc^{3+}$ and $Nb^{5+}$ in PSN influences complex admittance and dielectric properties. Confirmed the typical characteristic of lead-type relaxor in the Raman spectra of lead scandium niobate and major ranges are between 400 and $900cm^{-1}$.

• Bulletin of the Korean Chemical Society
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• v.29 no.1
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• pp.69-75
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• 2008

Tautomerism of pyrimidine base cytosine has been comparatively examined on nanoparticle and roughened plate surfaces of silver, gold, and copper by surface-enhanced Raman scattering (SERS). The SERS spectrum was found to be different depending on the metals and their substrate conditions suggesting the dissimilar population of various tautomers of cytosine on the surfaces. The ab initio calculations were performed at the levels of B3LYP, HF, and MP2 levels of theory with the LanL2DZ basis set to estimate the energetic stability of the tautomers with the metal complexes as well as the gas phase state. The amino group and N3-coordinated tautomer was predicted to be more favorable for bonding to Au, whereas the hydroxyl and N1-coordinated zwitter ionic form is most stable with Ag and Cu as a bidentate form from the DFT calculation. The binding energy with the Ag atom is calculated to be smaller than those with the Au and Cu atoms in line with the temperature-dependent SERS spectra of cytosine.

• Bulletin of the Korean Chemical Society
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• v.35 no.3
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• pp.743-748
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• 2014

In this work, we describe a very simple electroless deposition method to prepare moderate-SERS-active nanostructured Pd films deposited on the glass substrates. To the best of our knowledge, this is the first report on the one-pot electroless method to deposit Pd nanostructures on the glass substrates. This method only requires the incubation of negatively charged glass substrates in ethanol-water mixture solutions of $Pd(NO_3)_2$ and butylamine at elevated temperatures. Pd films are then formed exclusively and evenly on glass substrates. Due to the aggregated structures of Pd, the SERS spectra of benzenethiol and organic isonitrile could be clearly identified using the Pd-coated glass as a SERS substrate. This one-step fabrication method of Pd thin film on glass is cost-effective and suitable for the mass production.

• Carbon letters
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• v.1 no.3_4
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• pp.129-132
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• 2001

Carbonaceous thin films were prepared from acetylene and argon gases by plasma assisted chemical vapor deposition (Plasma CVD) at 873 K. The carbonaceous thin films were characterized by mainly Raman spectroscopy, and their electrochemical properties were studied by cyclic voltammetry and charge-discharge measurements in propylene carbonate (PC) solution. Raman spectra showed that crystallinity of carbonaceous thin films is correlated by the applied RF power. The difference of the applied RF power also affected on the results of cyclic voltammetry and charge-discharge measurements. In PC solution, intercalation and de-intercalation of lithium ion can occur as well as in the mixed solution of EC and DEC.

• 한국신재생에너지학회:학술대회논문집
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• 2007.11a
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• pp.573-576
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• 2007

가스 하이드레이트의 구조-I 및 구조-H의 공존 현상을 13C NMR과 Raman spectroscopy를 이용하여 분석하였다. 하이드레이트 생성 조건이 구조-H 영역에만 있을 때는 CH4+neohexane 혼합 하이드레이트가 구조-H만을 나타냈지만, 구조-I의 영역에서는 구조-H의 혼합 하이드레이트와 구조-I의 순수 메탄 하이드레이트가 공존하는 것을 $^{13}C$ NMR spectra를 통해 확인하였다. 이러한 현상은 구조-H 생성자로 알려진 isopentane, MCP, MCH 에서도 관찰되었으며, Raman spectroscopy를 이용해서도 확인할 수 있었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.485.1-485.1
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• 2014

In this research, we report the synthesis of three-dimensional (3D) hierarchical porous graphene aerogels (hpGAs) for application to electrochemical energy storage. For electrochemical systems, the specific capacitance is a key parameter to evaluate the characteristics of electrode materials. By taking full advantage of large surface area, 3D hpGAs would achieve the larger specific capacitance over rGO film and GAs. Microscopic structures and topologies of hpGAs were investigated using field emission scanning electron microscopy and transmission electron microscopy. X-ray photoelectron spectroscopy was used to determine the chemical compositions of rGO film, GAs, and hpGAs. Raman spectra were recorded from 100 to 2500 cm-1 at room temperature using a Raman spectroscopy equipped with a ${\times}100$ objective was used. The specific area and pore distribution of GAs and hpGAs were obtained using a Brunauer-Emmett-Teller apparatus.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1593-1595
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• 2002

Single crystal 3C-SiC(cubic silicon carbide) thin-films were deposited on Si(100) wafers up to a thickness of 4.3 ${\mu}m$ by APCVD method using HMDS(hexamethyildisilane) at $1350^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like crystal surface. The growth rate of the 3C-SiC films was 4.3 ${\mu}m/hr$. The 3C-SiC epitaxial films grown on Si(100) were characterized by XRD, AFM, RHEED, XPS and raman scattering, respectively. The 3C-SiC distinct phonons of TO(transverse optical) near 796 $cm^{-1}$ and LO(longitudinal optical) near $974{\pm}1cm^{-1}$ were recorded by raman scattering measurement. The hetero-epitaxially grown films were identified as the single crystal 3C-SiC phase by XRD spectra($2{\theta}=41.5^{\circ}$).