• Macromolecular Research
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• 제12권1호
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• pp.134-140
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• 2004

Semi-crystalline poly(ethylene terephthalate) (PET) film surfaces were modified with argon and oxygen plasmas by radio-frequency (RF) glow discharge at 240 mTorr/40 W; the changes in topography and surface structure were investigated by atomic force microscopy (AFM) in conjunction with specular reflectance of infrared microspectroscopy (IMS). Under our operating conditions, analysis of the AFM images revealed that longer plasma treatment results in significant ablation on the film surface with increasing roughness, regardless of the kind of plasma used. The basic topographies, however, were different depending upon the kind of gas used. The specular reflectance analysis showed that the ablative mechanisms of the argon and oxygen plasma treatments are entirely different with one another. For the Ar-plasma-treated PET surface, no observable difference in the chemical structure was observed before and after plasma treatment. On the other hand, the oxygen-plasma-treated PET surface displays a significant decrease in the number of aliphatic C-H groups. We conclude that a constant removal of material from the PET surface occurs when using the Ar-plasma, whereas preferential etching of aliphatic C-H groups, with respect to, e.g. , carbonyl and ether groups, occurs upon oxygen plasma.

• Applied Science and Convergence Technology
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• 제26권2호
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• pp.26-29
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• 2017

Thin films of europium-doped yttrium oxide ($Y_2O_3$:Eu) were prepared on Si (100) substrates by using a radio frequency (RF) magnetron sputtering. After the deposition, the films were annealed at $1000^{\circ}C$ in an air ambient for 1 hour. X-ray diffraction analysis revealed that the $Y_2O_3$:Eu films had a polycrystalline cubic ${\alpha}-Y_2O_3$ structure. The as-deposited films showed no photoluminescence (PL), which was due to poor crystalline quality of the films. The crystallinity of the $Y_2O_3$:Eu films was significantly improved by annealing. The strong red PL emission was observed from the annealed $Y_2O_3$:Eu films and the highest intensity peak was centered at around 613 nm. This emission peak originated from the $^5D_0{\rightarrow}^7F_2$ transition of the trivalent Eu ions occupying the $C_2$ sites in the cubic ${\alpha}-Y_2O_3$ lattice. The broad PL excitation band was observed at wavelengths below 280 nm, which was attributed to the charge transfer transition of the trivalent Eu ion.

• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 1997년도 추계학술발표회논문집
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• pp.52-54
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• 1997

고주파 유도결합 플라즈마(RFICP)에서 루우프법에 의해 자기장특성을 계측하였다. 자기장 계측은 플라즈마의 거시적 변화를 시간적으로 접근하며, 반도체 프로세스의 관건인 균일하고, 고집적인 분포를 얼마나 교란, 응집하는가를 검증하고, 밀도와의 관계를 비교, 분석하여 방적의 최적화를 규명할 수 있을 것이다. 작은 루우프 안테나($\Phi$:외경 7.5mm)는 RF 자기장의 크기와 방향을 결정하기 위해 방전속에 삽입된다. 자기장의 세기는 전형적으로 입력파워 50 - 500 [W]에 대해 0.1에서 2.5 G 사이로 변화하였다. 사용가스는 아르곤가스(99.9% 고순도)를 사용하였으며, 동작압력은 20 [mTorr] 에서 15 [sccm]까지하였다. 반경방향의 공간분포에서는 아스펙트비(aspect ratio : R/L)를 2로 하여 자기장 분포를 계측하였다. 자기장은 입력파워의존성에 대해서 200 [W]까지 상승하고, 300[W]에서 안정성을 지속한다. 압력에 대한 의존성은 300[W]에서 60 [mTorr]이상 일 때는 플라즈마의 균질한 압력상태를 벗어남을 보인다. 아르곤 가스유량에 대해서는 무거운 중성기체입자가 자기장의 영향을 거의 받지 않기 때문에 일정한 경향이 나타났다. 반경방향의 공간분포 측정에서는 자기장은 RFICP의 대구경 특성에 맞게 전체적으로 일정한 분포를 이루고 있음을 확인하였다. 이러한 결과로부터 고주파유도결합 플라즈마에서의 동작생성, 유지기구등의 파악에 도움이 될 것이다.

• 한국전기전자재료학회논문지
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• 제24권9호
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• pp.760-765
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• 2011

Znic sulfide (ZnS) thin films were deposited on glass substrates by radio frequency magnetron sputtering. The substrate temperature varied from room temperature (RT) to $500^{\circ}C$. The structural and optical properties of ZnS films were studied by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), energy dispersive analysis of X-ray (EDAX) and UV-visible transmission spectra. The XRD analyses reveal that ZnS films have cubic structures with (111) preferential orientation, whereas the diffraction patterns sharpen with the increase in substrate temperatures. The FESEM images indicate that ZnS films deposited at $400^{\circ}C$ have nano-sized grains with a grain size of ~ 67 nm. Then films exhibit relatively high transmittance of 80% in the visible region, with an energy band gap of 3.71 eV. One obvious result is that the energy band gap of the film increases with increasing the substrate temperatures.

• 한국전기전자재료학회논문지
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• 제31권4호
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• pp.244-248
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• 2018

We propose a method for improving the reliability of a solar cell by applying a fluorinated surface coating to protect the cell from the outdoor environment using an atmospheric pressure plasma (APP) treatment. An APP source is operated by radio frequency (RF) power, Ar gas, and $O_2gas$. APP treatment can remove organic contaminants from the surface and improve other surface properties such as the surface free energy. We determined the optimal APP parameters to maximize the surface free energy by using the dyne pen test. Then we used the scratch test in order to confirm the correlation between the APP parameters and the surface properties by measuring the surface free energy and adhesive characteristics of the coating. Consequently, an increase in the surface free energy of the cover glass caused an improvement in the adhesion between the coating layer and the cover glass. After treatment, adhesion between the coating and cover glass was improved by 35%.

• 디자인학연구
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• 제17권1호
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• pp.179-190
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• 2004

개인생활의 프라이버시와 외부로부터 자신의 안전성(Safety)을 확보하고자하는 노력은 오늘날 기술의 진보와 더불어 보안시스템의 발전을 가져왔다. 특히 아파트형태의 주거생활이 보편화되면서 프라이버시의 확보와 외부침입으로부터 자신과 가족의 보호라는 측면에서 도어락시스템(Door Lock System)의 역할과 기능의 중요성이 증대되고 있다. 이러한 추세에 발맞추어 기술의 발전뿐만 아니라 사용자중심의 다양한 방법의 인터페이스에 대한 연구가 이뤄지고 있으며 그 일환으로 지문이나 홍체인식과 같은 최첨단의 보안시스템이 등장하고 있다. 본 연구는 암호화기술(Advanced Encryption Standard)을 적용하여 보안과 안전성을 확보함과 동시에 사용자가 쉽게 작동하고 사용할 수 있는 인터페이스를 바탕으로 한 도어락 개발에 초점을 두고 있다. 특히 가격 면에서도 기존제품과 경쟁력을 가질 수 있고, 보다 근본적으로 도어락 뿐만 아니라 전반적인 잠금장치에 대한 새로운 가능성과 방법을 모색해 봄으로써 향후 잠금장치와 보안시스템에 대한 대안을 제시코자 한다.

• Journal of Electrical Engineering and Technology
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• 제6권5호
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• pp.684-687
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• 2011

In this study, we investigate the photovoltaic performance of transparent conductive indium tin oxide (ITO), titanium-doped indium oxide (ITiO), and fluorine-doped tin oxide (FTO) films. ITO and ITiO films are prepared by radio frequency magnetron sputtering on soda-lime glass substrate at $300^{\circ}C$, and the FTO film used is a commercial product. We measure the X-ray diffraction patterns, AFM micrographs, transmittance, sheet resistances after heat treatment, and transparent conductive characteristics of each film. The value of electrical resistivity and optical transmittance of the ITiO films was $4.15{\times}10^{-4}\;{\Omega}-cm$. The near-infrared ray transmittance of ITiO is the highest for wavelengths over 1,000 nm, which can increase dye sensitization compared to ITO and FTO. The photoconversion efficiency (${\eta}$) of the dye-sensitized solar cell (DSC) sample using ITiO was 5.64%, whereas it was 2.73% and 6.47% for DSC samples with ITO and FTO, respectively, both at 100 mW/$cm^2$ light intensity.

• 한국정보통신학회논문지
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• 제18권10호
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• pp.2345-2350
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• 2014

본 논문에서는 포트 임피던스가 75옴인 실내 디지털 TV (DTV)용 안테나의 특성 측정 방법에 대해 소개하였다. 일반적인 RF (혹은 마이크로파) 시스템과 측정 장비의 기준 임피던스는 거의 대부분 50옴이다. 이에 비해 실내 디지털 TV용 안테나의 기준 임피던스는 75옴이므로 기준 임피던스가 50옴인 측정 장비를 이용하여 직접 특성을 측정할 수 없다. 50옴을 기준으로 하는 장비를 이용하여 75옴에 적합하도록 설계된 안테나의 특성(임피던스, 복사패턴 및 이득)에 대한 측정방법을 소개하였다.

• 한국정보처리학회:학술대회논문집
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• 한국정보처리학회 2002년도 춘계학술발표논문집 (하)
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• pp.1285-1288
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• 2002

Bluetooth wireless technology is a publicly available specification proposed for Radio Frequency (RF) communication for short-range and point-to- multipoint voice and data transfer. It operates in the 2.4GHz ISM(Industrial, Scientific and Medical) band and offers the potential for low-cost, broadband wireless access for various mobile and portable devices at range of about 10 meters. In this paper, we describe the structure and the test results of the bluetooth baseband module we have developed. This module was developed based on IP reuse. So Interface of each module such as link controller UART, and audio CODEC is designed based on ARM7 comfortable processor. We also considered various interfaces of related external chips. The fully synthesizable baseband module was fabricated in a $0.25{\mu}m$ CMOS technology occupying $2.79{\times}2.8mm^2$ area including the ARM TDMI processor. And a FPGA implementation of this module is tested for file and bit-stream transfers between PCs.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.214-215
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• 2007

Etch rates and surface chemistry of phenol formaldehyde-based photoresist after short time $O_2\;and\;N_2O$ radio frequency (RF) plasma treatment depending on exposure time were investigated. It was found that the etch rate of photoresist sharply increased after discharge turn on and reached a limit with increase in plasma exposure time in both gases. X-ray photoelectron spectroscopy (XPS) analysis showed that the surface chemical structure become nearly constant after the treatment of 15 sec. Concentration of surface oxygen-containing groups after processing both in oxygen and in $N_2O$ plasmas is similar.