• Journal of Semiconductor Engineering
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• v.1 no.3
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• pp.81-87
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• 2020

An instrumentation amplifier (IA) and an analog-to-digital converter (ADC) are essential circuit blocks for accurate and robust sensor readout systems. This paper introduces recent advances in radiation-hardening by design (RHBD) techniques applied for the sensor readout integrated circuits (IC), e.g., the three-op-amp IA and the successive-approximation register (SAR) ADC, operating against total ionizing dose (TID) and singe event effect (SEE) in harsh radiation environments. The radiation-hardened IA utilized TID monitoring and adaptive reference control to compensate for transistor parameter variations due to radiation effects. The radiation-hardened SAR ADC adopts delay-based double-feedback flip-flops to prevent soft errors which flips the data bits. Radiation-hardened IA and ADC were verified through compact model simulation, and fabricated CMOS chips were measured in radiation facilities to confirm their radiation tolerance.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.6
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• pp.1405-1410
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• 2015

In this study we designed the radiation-hardened sensor signal processing modules that can be commonly used for a variety of sensors during normal operation and even in high-radiation environments caused by an accident. First development module was designed to receive the change of the R and C value from the sensors and to process the signal as a PWM modulation scheme. This module was assessed to have ± 10% error to the Full-Scale in the radiation test in the range of 12 kGy TID. The main cause of the error was analyzed as the annealing of the common circuit in the switching element and the consequent increase in the duty ratio of the pulse width modulation circuit according to the radiation dose increasement. The redesigned module for higher radiation resistivity with Stub transistor circuit was found to have less than 5% error to the Full-scale from the radiation test results for 20.7 kGy TID range.