• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.7
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• pp.612-616
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• 2000

This paper describes on the fabrication and characteristics of hot-film type micro-flowsensors integrated with Pt-RTD(resistance thermometer device) and micro-heater on the Si membrane in which MgO thin-film was used as medium layer in order to improve adhesion of Pt thin-film to SiO$_2$layer. The MgO layer improved adhesion of Pt thin-film to SiO$_2$layer without any chemical reactions to Pt thin-film under high annealing temperatures. Output voltages increased due to increase of heat-loss from sensor to external. The output voltage was 82 mV at $N_2$flow rate of 2000 sccm/min heating power of 1.2 W. The response time($\tau$:63%) was about 50 msec when input flow was stepinput

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 1998.05a
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• pp.153-155
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• 1998

• Journal of Sensor Science and Technology
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• v.9 no.3
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• pp.171-176
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• 2000

The physical and electrical characteristics of MgO and Pt thin-films on it, deposited by reactive sputtering and rf magnetron sputtering, respectively, were analyzed with annealing temperature and time by four-point probe, SEM and XRD. Under annealing conditions of $1000^{\circ}C$ and 2 hr, MgO thin-film had the properties of improving Pt adhesion to $SiO_2$ and insulation without chemical reaction to Pt thin-film, and the sheet resistivity and the resistivity of Pt thin-film deposited on it were $0.1288\;{\Omega}/{\square}$ and $12.88\;{\mu}{\Omega}{\cdot}cm$, respectively. We made Pt resistance pattern on $SiO_2$/Si substrate by lift-off method and fabricated thin-film type Pt-RTD(resistance thermometer device) for micro thermal sensors by Pt-wire, Pt-paste and SOG(spin-on-glass). In the temperature range of $25{\sim}400^{\circ}C$, the TCR value of fabricated Pt-RTD with thickness of $1.0{\mu}m$ was $3927\;ppm/^{\circ}C$ close to the Pt bulk value. Resistance values were varied linearly within the range of measurement temperature.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.8
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• pp.1478-1485
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• 2007

In this paper, a meteorological system including a wind speed & direction module and the DSP(Digital Signal Processor) sensor interface circuit board are proposed. This DSP system accepts and process the informations from a wind speed & direction module, the atmospheric pressure sensor, the ambient air temperature sensor and transfers it to the PC monitoring system. Especially, a wind speed & direction module and a DSP hardware are directly designed and applied. A wind speed & direction module have a construction that it have four film type RID(Resistive Temperature Detectors) resistive sensor adhered around the circular metal body heated constantly by heating coil for obtaining vector informations about wind. By this structure, the module is enabled precise measurement having a robustness about vibration, humidity, corrosion. A sensor signal processing circuit is using TMS320F2812 TI(Texas Instrument) Corporation high speed DSP. An economical meteorological system could be constructed through the data from wind speed & direction module and by the fast processing of DSP interface circuit board.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.113-113
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• 2009

This paper describes the characteristics of a poly 3C-SiC micro heater which was fabricated on $AlN(0.1{\mu}m)/3C-SiC(1.0{\mu}m)$ suspended membranes by surface micro- machining technology. The 3C-SiC and AlN thin films which have wide energy bandgap and very low lattice mismatch were used sensors for high temperature and voltage environments. The 3C-SiC thin film was used as micro heaters and temperature sensor materials simultaneously. The implemented 3C-SiC RTD (resistance of temperature detector) and the power consumption of micro heaters were measured and calculated. The TCR (thermal coefficient of the resistance) of 3C-SiC RTD is about -5200 $ppm/^{\circ}C$ within a temperature range from $25^{\circ}C$ to $50^{\circ}C$ and -1040 $ppm/^{\circ}C$ at $500^{\circ}C$. The micro heater generates the heat about $500^{\circ}C$ at 10.3 mW. Moreover, durability of 3C-SiC micro heaters in high voltages is better than pt micro heaters. A thermal distribution measured and simulated by IR thermovision and COMSOL is uniform on the membrane surface.

• Proceedings of the Computational Structural Engineering Institute Conference
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• 2011.04a
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• pp.157-160
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• 2011

본 연구에서는 광섬유 센서 기반 스마트 모니터링 시스템이 지중 열전도도 측정에도 효율적으로 적용될 수 있는지를 분석하였다. 이를 위해 광섬유 온도센서를 이용하여 지반의 열전도도를 측정할 수 있는 열응답 시험기가 개발되었다. 개발된 열응답 시험기는 기존의 RTD(Resistance Temperature Detector) 온도 센서 외에 광섬유 센서의 한 종류인 FBG(Fiber Bragg Grating) 센서도 실시간적으로 측정할 수 있는 시스템으로 구성되어 있다. 개발된 장비의 적용성 검증을 위하여 주문진 표준사를 이용하여 모형토조 내에 일정한 간극비에 맞추어 시료가 조성되었으며 지중열교환기는 U자형 파이프가 사용되었다. 20시간동안 열응답 시험을 통하여 광섬유 센서와 RTD 센서를 동시에 이용하여 온도값을 측정하여 표준사의 열전도도 값을 산출하였다. 그 결과 모형실험을 통한 열전도도 값은 탐침법을 통해 얻어진 열전도도 값과 선형 열원 모델(line source model) 해석해와 거의 유사하게 나타났으며 광섬유 센서와 RTD 센서와의 온도차는 0.1~0.3$^{\circ}$로써 유사한 값을 나타내었다. 따라서 본 연구에서 개발된 광섬유 기반 열응답 시험기는 지반의 열전도도를 측정하는데 효과적으로 사용될 수 있음을 알 수 있었으며 향후 지열시스템 가동에 따른 지중열 교환기의 손상도 평가 및 경보시스템 개발을 위해 지중열교환기의 거동을 실시간으로 모니터링 하는데 있어서도 효과적으로 사용될 수 있을 것으로 생각된다.

• Proceedings of the KIEE Conference
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• 1999.07g
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• pp.3319-3321
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• 1999

Pt-RTD and Micro Heater was fabricated by using MgO as medium layer in order to improve adhesion of Pt thin-films to $SiO_2$ layer, MgO layer improved adhesion of Pt thin-films to $SiO_2$ layer without any chemical reactions to Pt thin-films under high annealing temperatures, In the analysis of properties of Pt-RTD, TCR value had 3927 $ppm/^{\circ}C$ and liner in the temperature range of $25-400^{\circ}C$. The temperature of Pt micro-heater had up to $400^{\circ}C$ with 1.5watts of the heating power. In investigating output characteristics of flow sensors output voltages increased as gas flow rate and its conductivity increased due to increase of heat-loss from sensor to external. Output voltage was 82 mV at $N_2$ flow rate of 2000sccm, heating power of 1.2W.

• Journal of Sensor Science and Technology
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• v.6 no.2
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• pp.81-86
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• 1997

Platinum thin films were deposited on $SiO_{2}/Si$ and $Al_{2}O_{3}$ substrates by DC magnetron sputtering for RTD (resistance thermometer devices) temperature sensors. The resistivity and sheet resistivity of these films were decreased with increasing the annealing temperature and time. We made Pt resistance pattern on $Al_{2}O_{3}$ substrate by lift-off method and fabricated Pt-RTD temperature sensors by using W-wire, silver epoxy and SOG(spin-on-glass). In the temperature range of $25{\sim}400^{\circ}C$, we investigated TCR(temperature coefficient of resistance) and resistance ratio of Pt-RTD temperature sensors. TCR values were increased with increasing the annealing temperature, time and the thickness of Pt thin films. Resistance values were varied linearly within the range of measurement temperature. At annealing temperature of $1000^{\circ}C$, time of 240min and thin film thickness of $1{\mu}m$, we obtained TCR value of $3825ppm/^{\circ}C$ close to the Pt bulk value.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.17-20
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• 2000

This paper describes on the fabrication and characteristics of hot-film type micro-flowsensors integrated with Pt-RTD's and micro-heaters on the Si substrate, in which MgO thin-films were used as medium layer in order to improve adhesion of Pt thin-films to $SiO_2$ layer, The MgO layer improved adhesion of Pt thin-films to $SiO_2$ layer without any chemical reactions to Pt thin-films under high annealing temperatures. In investigating output characteristics of the fabricated micro-flowsensors, the output voltages increased as gas flow rate and its conductivity increased due to increase of heat-loss from sensor to external. Output voltage was 82 mV at $N_2$ flow rate of 2000 seem/min, heating power of 1.2W.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.8
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• pp.658-662
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• 2001

This paper describes on the fabrication and characteristics of hot-film type micro-flowsensors integrated with Pt-RTD(resistance thermometer device) and micro-heater on the SOI(Si-on-insulator) membrane and trench structures, in which MGO thin-film was used as medium layer in order to improve adhesion of Pt thin-film to SiO$_2$ layer. Output voltages increased due to increase of heat-loss from sensor to external. The output voltage was 250 nV at N$_2$ flow rate of 2000 sccm/min, heating power of 0.3 W. The response time($\tau$:63%) was about 42 msec when input flow was step-input. The results indicated that micro-flowsensors with the SOI membrane and trench structures have properties of a high-resolution and ow consume power.