• 한국진공학회지
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• 제22권6호
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• pp.313-320
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• 2013

실리콘(Silicon, Si) 기판과 $Al_{0.3}Ga_{0.7}As$/GaAs 다중 양자 우물(multiple quantum wells, MQWs) 간의 격자 부정합 해소를 위해 $AlAs_xSb_{1-x}$ 층이 단계 성분 변화 완충층(step-graded buffer, SGB)으로 이용되었다. $AlAs_xSb_{1-x}$ 층 상에 형성된 GaAs 층의 RMS 표면 거칠기(root-mean-square surface roughness)는 $10{\times}10{\mu}m$ 원자 힘 현미경(atomic force microscope, AFM) 이미지 상에서 약 1.7 nm로 측정되었다. $AlAs_xSb_{1-x}$/Si 기판 상에 AlAs/GaAs 단주기 초격자(short period superlattice, SPS)를 이용한 $Al_{0.3}Ga_{0.7}As$/GaAs MQWs이 형성되었다. $Al_{0.3}Ga_{0.7}As$/GaAs MQW 구조는 약 10 켈빈(Kalvin, K)에서 813 nm 부근의 매우 약한 포토루미네선스(photoluminescence, PL) 피크를 보였고, $Al_{0.3}Ga_{0.7}As$/GaAs MQW 구조의 RMS 표면 거칠기는 약 42.9 nm로 측정되었다. 전자 투과 현미경(transmission electron microscope, TEM) 단면 이미지 상에서 AlAs/GaAs SPS 로부터 $Al_{0.3}Ga_{0.7}As$/GaAs MQWs까지 격자 결함들(defects)이 관찰되었고, 이는 격자 결함들이 $Al_{0.3}Ga_{0.7}As$/GaAs MQW 구조의 표면 거칠기와 광 특성에 영향을 주었음을 보여준다.

• 마이크로전자및패키징학회지
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• 제11권4호
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• pp.81-86
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• 2004

메가소닉파을 이용하여 KOH 용액에서의 실리콘 이방성 습식 식각의 특성들을 개선하기 위한 새로운 방법에 관한 연구를 하였다. P형 6인치 실리콘 웨이퍼를 메가소닉파를 이용한 상태와 이용하지 않은 상태에서 식각 실험을 각각 수행하여 식각 특성들을 비교하였다. 메가소닉파는 식각균일도, 표면 조도 등과 같은 습식 식각의 특성들을 개선시키는 것으로 나타났다. 메가소닉파를 이용했을 때 식각 균일도는 전체 웨이퍼 표면의 ${\pm}1\%$ 이하이며, 메가소닉파를 이용하지 않았을 때는 ${\pm}20\%$이상이다. 식각 공정에 사용한 초기의 실리콘웨이퍼의 제곱 평균 표면 조도($R_{rms}$)는 0.23 nm이다. 자기 진동과 초음파 진동을 이용한 식각에서의 평균 표면 조도는 각각 566 nm, 66 nm로 보고 되었지만, 메가소닉파를 이용하여 $37{\mu}m$ 깊이로 식각한 경우 평균 표면 조도가 1.7nm임을 실험을 통하여 검증하였다. 이러한 결과는 메가소닉파를 이용한 식각 방법이 식각 균일도, 표면 평균 조도 등과 같은 식각 특성들을 개선시키는데 효과적인 방법임을 알 수 있다.

• 한국해양학회지:바다
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• 제3권2호
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• pp.53-58
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• 1998

거친 바닥을 포함하고 있는 laminar 에크만층 내 흐름의 방향변화를 파악하기 위하여 바닥경계조건을 Taylor 급수로 전개하여 에크만방정식의 해를 구하였다. 이때 거친 바닥의 거칠기 정도를 나타내는 변수 h/${\delta}_E$(h, 거칠기의 rms 높이; ${\delta}_E$, 에크만층 두께)의 크기를 변화시켜 거칠기에 의한 에크만층 내 흐름의 방향변화(에크만 veering)를 구하였다. 거칠기 증가시 에크만층 내 일정 수심에서 변회각의 크기가 증가할 뿐만 아니라 이에 따른 cross-isobar 수송량은 도리어 감소함으로써, 결과적으로 내부의 지형류 속도가 감소함을 보여주고 있다. 이러한 이론적 결과를 증명하기 위해 회전반 실험을 실시하였고 관측된 결과는 이론적인 것과 잘 일치하고 있다.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 춘계학술대회 논문집
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• pp.468-472
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• 2005

This paper is to investigate the influence of the endface quality on the loss characteristics of a plastic optical fiber connector for in-car network service. Using the parameters of the surface roughness and applied load, insertion loss of connector is measured. Due to scattering and change of refractive index, an optimal condition for low-loss coupling exists. We present the optimal condition as surface roughness $R_{rms}$ = 8 nm and contact load up to 50 N.

• 한국정밀공학회지
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• 제23권3호
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• pp.61-68
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• 2006

This paper is to investigate the influence of the endface quality on the loss characteristics of a plastic optical fiber(POF) connector and the stability of new designed sleeve for in-car network service. Using the parameters of the surface roughness and applied load, insertion loss of connector is measured. Endface condition for optimizing the connection is presented by the surface roughness satisfying loss criteria and the stress for minimizing the loss, $R_{rms}=8nm$ and 19 MPa, respectively. By vibration test and dynamic loss measurement, we show the stability of the new designed sleeve.

• 한국소음진동공학회논문집
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• 제19권10호
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• pp.1083-1091
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• 2009

Modern military equipments are tend to be mounted on a movable truck for their survivability and operation performance. Special units and electronic equipments installed on the truck experience the vibration caused by road roughness during their transport. The level of the transportation vibration is affected by both road conditions and vehicle speeds. In this paper, various experiments on the vibration characteristics of the equipment are carried out via road tests. Transportation vibration is also investigated by numerical analysis using FEM, and natural frequencies and random responses of the launcher are obtained. The PSD and RMS values of acceleration of the equipment are predicted and compared with test results.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 C
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• pp.1393-1395
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• 2001

DLC films are deposited by using a modified FCVA system. Carbon amorphous network, surface roughness, internal compressive stress, resistivity, and Hall mobility are studied as a function of nitrogen flow rate (0 $\sim$ 10 sccm). As the nitrogen content is increased in the carbon network, the size of $sp^2$ clusters is increased, the internal compressive stress is decreased, and the resistivity is remarkably decreased. The RMS values of the surface roughness are measured to be in the range of 0.2$\sim$0.5nm. The Hall mobility of DLC film with 3 sccm of nitrogen added is 3.22 $cm^2/V{\cdot}$s.

• Applied Science and Convergence Technology
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• 제25권2호
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• pp.32-35
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• 2016

Using conventional deposition techniques, we demonstrate a method to fabricate ultra-smooth 10 nm silver films without using a wetting layer or co-depositing another material. The argon working pressure plays a crucial role in achieving an excellent surface flatness for silver films deposited by DC magnetron sputtering on an InP substrate. The formation of ultra-smooth silver thin films is very sensitive to the argon pressure. At the optimum deposition condition, a uniform silver film with an rms surface roughness of 0.81 nm has been achieved.

• 한국전기전자재료학회논문지
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• 제13권10호
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• pp.805-811
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• 2000

Reliability of PBGA(plastic ball grid array) package is weak compared with normal plastic packages. The low reliability is caused by low resistance to the popcorn cracking, which is generated by moisture absorption in PCB(prited circuit board). In this paper, plasma treatment process was used and we analyzed its effects to interface adhesion. The contents of C and Cl decrease after plasma treatment but those of O, Ca, N relatively increase. The plasma treatment improves the adhesion between EMC(epoxy molding compound) and PCB(solder mask). The grade of improvement was over 100% Max, which depends on the properties of EMC. The RMS(root mean square) roughness value of the solder mask surface increases to plasma treatment. There is little difference of adhesion in RF power and treatment time.

• Applied Science and Convergence Technology
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• 제23권2호
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• pp.90-96
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• 2014

Flexible $ZrO_2$ films as dielectric materials for high-energy-density capacitors were deposited on polyethylene terephthalate (PET) substrates by RF magnetron sputtering. The growth behavior, microstructure and electrical properties of the flexible $ZrO_2$ films were dependent on the sputtering pressure and gas ratio. Although $ZrO_2$ films were deposited at room temperature, all films showed a tetragonal crystalline structure regardless of the sputtering variables. The surface of the film became a surface with large white particles upon an increase in the $O_2/Ar$ gas ratio. The RMS roughness and crystallite size of the $ZrO_2$ films increased with an increase in the sputtering pressure. The electrical properties of the $ZrO_2$ films were affected by the microstructure and roughness. The $ZrO_2$ films exhibited a dielectric constant of 21~38 at 1 kHz and a leakage current density of $10^{-6}{\sim}10^{-5}A/cm^2$ at 300 kV/cm.