• Journal of Astronomy and Space Sciences
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• 제21권2호
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• pp.141-152
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• 2004

우주망원경용 비구면 반사경 가공 공정은 고정입자 연삭, 자유입자 래핑, 연마의 순서를 따른다. 숙련공에 의한 경험적 공정조절에 의해 목표 비구면을 가공하는 전통적 연삭 공정에서는 수 ${mu}m$ 높이의 표면 밑 손상을 남기며 뒤이은 자유입자 래핑 및 연마 공정에서 이를 제거하며 가공한다. 본 연구는 컴퓨터 수치 제어 연삭 공정진화 모델을 개발하여, 연삭가공을 통해 반사경 표면조도 최소 40nm이하, 가공 예측정확도 20nm급을 이루었다. 구체적인 방법론으로 초정밀가공기의 연삭모듈을 이용하여 연삭 휠 입자의 크기, 이송속도, 공작물 회전선속도 등 연삭 변수를 변화시키며 직경 20, 100mm Zerodur 소재를 초기 연삭하였다. 초기 연삭 변수와 측정된 표면조도와의 관계를 경험적 해석과 다 변수 회귀분석 해석 방법을 통하여 공정조절용 수치 연삭 모델을 구성하였다. 정량적 공정제어는 입력된 연삭변수들로부터 가공 후 표면조도를 예측하고, 측정된 표면조도를 이용하여 수치연삭 모델을 개량한 후 다음 가공에서 측정될 표면조도를 예측하는 순으로 만복 진행되었다. 본 연구에서는 CNC 연삭공정조절로부터 최소 평균 표면조도 36nm, 예측정확도 ${pm}20nm$를 얻었다. 이 연구결과는 정량적 연삭공정제어 모델을 사용하여 자유입자 래핑 공정을 수행할 필요 없이 연삭에서 직접 연마 공정으로 진행할 수 있는 획기적인 공정 효율 향상을 의미한다.

• 한국재료학회지
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• 제19권3호
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• pp.132-136
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• 2009

This study investigates GaAs dry etching in capacitively coupled $BCl_3/N_2$ plasma at a low vacuum pressure (>100 mTorr). The applied etch process parameters were a RIE chuck power ranging from $100{\sim}200W$ on the electrodes and a $N_2$ composition ranging from $0{\sim}100%$ in $BCl_3/N_2$ plasma mixtures. After the etch process, the etch rates, RMS roughness and etch selectivity of the GaAs over a photoresist was investigated. Surface profilometry and field emission-scanning electron microscopy were used to analyze the etch characteristics of the GaAs substrate. It was found that the highest etch rate of GaAs was $0.4{\mu}m/min$ at a 20 % $N_2$ composition in $BCl_3/N_2$ (i.e., 16 sccm $BCl_3/4$ sccm $N_2$). It was also noted that the etch rate of GaAs was $0.22{\mu}m/min$ at 20 sccm $BCl_3$ (100 % $BCl_3$). Therefore, there was a clear catalytic effect of $N_2$ during the $BCl_3/N_2$ plasma etching process. The RMS roughness of GaAs after etching was very low (${\sim}3nm$) when the percentage of $N_2$ was 20 %. However, the surface roughness became rougher with higher percentages of $N_2$.

• 접착 및 계면
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• 제13권1호
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• pp.45-50
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• 2012

폴리케톤(polyketone, PK) 섬유는 고무의 강화재로 사용하기 위해서 최근 개발되고 있는 소재이다. 섬유의 고무와의 접착성을 향상시키기 위하여 플라즈마로 표면을 개질하였다. 산소 플라즈마 처리에 의한 섬유표면의 물리적 형태변화를 관찰하기 위하여 주사전자현미경과 원자현미경을 이용하여 관찰하였다. 섬유표면의 화학적 조성변화를 XPS (X-ray photoelectron spectroscopy)를 이용하여 알아보았다. 최종적으로 이러한 변화가 PK 섬유와 고무와의 계면접착력에 어떠한 영향을 미치는지를 microdroplet debonding 시험을 통해 분석하였다. 플라즈마 처리에 의하여 섬유표면에 산소함유기들이 증가하는 결과를 보였으며, 처리시간과 처리전력이 증가함에 따라 에칭에 의한 표면조도(RMS roughness)가 증가하였다. 그러나 장시간의 플라즈마 처리조건에서는 표면에 degradation이 발생하여 오히려 표면조도가 감소하는 결과를 보였다. PK 섬유와 고무와의 계면전단강도는 처리시간 60 s의 80 W, 처리전력 60 W의 180 s에서 처리한 경우에 최대 계면전단강도를 나타내었다. 그러나 그 이상으로 증가하면 degradation이 발생하면서 계면전단강도가 감소하였다.

• Journal of Magnetics
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• 제9권1호
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• pp.13-16
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• 2004

Magnetic tunnel junctions (MTJs) comprising amorphous CoNbZr layers have been investigated. $Co_{85.5}Nb_8Zr_{6.5}$(in at. %) layers were employed to substitute the traditionally used Ta layers with an emphasis given on under-standing underlayer effect. The typical junction structure was $SiO_2/CoNbZr$ or Ta 2/CoFe 8/IrMn 7.5/CoFe 3/Al 1.6 + oxidation/CoFe 3/CoNbZr or Ta 2 (nm). For both as-deposited state and after annealing, the CoNbZr-underlayered structure showed superior surface smoothness up to the tunnel barrier than Ta-underlayerd one (rms roughness of 0.16 vs. 0.34 nm). CoNbZr-based MTJs was proven beneficial for increasing thermal stability and increasing $V_h$ (the bias voltage where MR ratio becomes half) characteristics than Ta-based MTJs. This is because the CoNbZr-based junctions offer smoother interface structure than the Ta-based one.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.279-282
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• 2001

The IBE(ion beam etching)-induced Schottky barrier variation which depends on various etching history related with ion energy, incident angle and etching time has been investigated using voltage-current, capacitance-voltage characteristics of metal-etched silicon contact and morphology of etched surface were studied using AFM(atomic force microscope). For ion beam etched n-type silicons, Schottky barrier is reduced according to ion beam energy. It can be seen that amount of donor-like positive charge created in the damaged layer is proportional to the ion energy. By contrary, for ion beam etched p-type silicons, the Schottky barrier and specific contact resistance are both increased. Not only etching time but also incident angle of ion beam has an effect on barrier height. Taping-mode AFM analysis shows increased roughness RMS(Root-Mean-Square) and depth distribution due to ion bombardment. Annealing in an N$_2$ ambient for 30 min was found to be effective in improving the diode characteristics of the etched samples and minimum annealing temperatures to recover IBE-induced barrier variation were related to ion beam energy.

• 한국재료학회지
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• 제24권4호
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• pp.207-213
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• 2014

Flexible $BaTiO_3$ films as dielectric materials for high energy density capacitors were deposited on polyethylene terephthalate (PET) substrates by r.f. magnetron sputtering. The growth behavior, microstructure and electrical properties of the flexible $BaTiO_3$ films were dependent on the sputtering pressure during sputtering. The RMS roughness and crystallite size of the $BaTiO_3$ increased with increasing sputtering pressure. All $BaTiO_3$ films had an amorphous structure, regardless of the sputtering pressures, due to the low PET substrate temperature. The composition of films showed an atomic ratio (Ba:Ti:O) of 0.9:1.1:3. The electrical properties of the $BaTiO_3$ films were affected by the microstructure and roughness. The $BaTiO_3$ films prepared at 100 mTorr exhibited a dielectric constant of ~80 at 1 kHz and a leakage current of $10^{-8}A$ at 400 kV/cm. Also, films showed polarization of $8{\mu}C/cm^2$ at 100 kV/cm and remnant polarization ($P_r$) of $2{\mu}C/cm^2$. This suggests that sputter deposited flexible $BaTiO_3$ films are a promising dielectric that can be used in high energy density capacitors owing to their high dielectric constant, low leakage current and stable preparation by sputtering.

• 대한원격탐사학회지
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• 제27권3호
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• pp.225-234
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• 2011

This study proposes an inversion algorithm to extract the surface parameters, such as surface roughness and soil moisture contents, using multi-frequency SAR data. The study areas include the tidal flats of Jebu Island and the reclaimed lands of Hwaong district on the western coasts of the Korean peninsula. SAR data of three frequencies were accordingly calibrated to provide precise backscattering coefficients through absolute radiometric calibration. The root mean square (RMS) height and the correlation length, which can describe the surface roughness, were extracted from the backscattering coefficients using the inversion of the Integral Equation Method (IEM). The IEM model was appropriately modified to accommodate the environmental conditions of tidal flats. Volumetric soil moisture was also simultaneously extracted from the dielectric constant using the empirical model, which define the relations between volumetric soil moistures and dielectric constants. The results obtained from the proposed algorithm were verified with the in-situ measurements, and we confirmed that multi-frequency SAR observations combined with the surface scattering model for tidal flats can be used to quantitatively retrieve the geophysical surface parameters in tidal flats.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권9호
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• pp.616-621
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• 1999

A planar inductively coupled $CH_4/H_2/Ar$plasma was used to investigate dry etch characteristics of GaN as a function of input power, RF bias power, and etch gas composition. Etch rate of GaN increased with input power up to 600 W and was saturated at the higher power. Also, the etch rates increased with increasing RF bias power, composition of $CH_4$ and Ar gas. We achieved the maximum etch rate of $930{\AA}$/min at the input power 400 W, RF bias power 250 W, and operational pressure 10 mTorr. This paper shows that smooth etched surface having roughness less than 1 nm in rms can be obtained by using planar inductively coupled plasma with $CH_4/H_2/Ar$ gas chemistry.

• 한국표면공학회지
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• 제37권3호
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• pp.146-151
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• 2004

Indium tin oxide (ITO) is widely used to make a transparent conducting film for various display devices and opto-electric devices. In this study, ITO films on glass substrate were fabricated by inductively coupled plasma (ICP) assisted dc magnetron sputtering. A two-turn rf coil was inserted in the process chamber between the substrate and magnetron for the generation of ICP. The substrates were not heated intentionally. Subsequent post-annealing treatment for as-deposited ITO films was not performed. Low-temperature deposition technique is required for ITO films to be used with heat sensitive plastic substrates, such as the polycarbonate and acrylic substrates used in LCD devices. The surface roughness of the ITO films is also an important feature in the application of OLEDs along with the use of a low temperature deposition technique. In order to obtain optimum ITO thin film properties at low temperature, the depositions were carried out at different condition in changing of Ar and $O_2$ gas mixtures, ICP power. The electrical, optical and structural properties of the deposited films were characterized by four-point probe, UV/VIS spectrophotometer, atomic force microscopy(AFM) and x-ray diffraction (XRD). The electrical resistivity of the films was -l0$^{-4}$ $\Omega$cm and the optical transmittance in the visible range was ＞85%. The surface roughness ( $R_{rms}$) was -20$\AA$.>.

• 한국재료학회지
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• 제16권11호
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• pp.710-714
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• 2006

The purpose of this study is to identify the effect of additives and composition on copper surface morphology and mechanical characteristics by copper electrodeposition. Additives such as hydroxy ethyl cellulose(HEC), chloride ion were used in this study. Electrochemical experiments allied to SEM, XRD, AFM and four- point probe were performed to characterize the morphology and mechanical characters of copper in the presence of additives. Among various electrodeposition conditions, the minimum surface roughness of copper foil was obtained when electrodeposited at the current density of 200 mA/$cm^2$ for 68 seconds with 2 ppm of HEC. The minimum value of surface roughness(Rms) was 107.6 nm. It is copper foil is good for electromigration inhibition due to preferential crystal growth of Cu (111) deposited in the electrolyte containing chloride ions(10 ppm) and HEC(1 ppm).