• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.824-827
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• 2000

Fabrication of InP-based photonic devices by dry etch Process is important for clear formation of waveguide mesa structure. We have developed more efficient etch process of the inductively coupled plasma (ICP) with low damages and less polymeric deposits for the InP-based photonic devices than the reactive ion etching (RIE) technique. We report the tendency of etch rate variation by the process parameters of the RF power, pressure, gas flow rate, and the gas mixing ratio. The surface roughness of InP-based waveguide structure was more improved by the light wet etching in the mixed solution of H$_2$SO$_4$:H$_2$O (1:1)

• Proceedings of the Korean Vacuum Society Conference
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• 2009.08a
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• pp.110-110
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• 2009

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.408-408
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• 2012

It is well known that magnetic random access memory (MRAM) is nonvolatile memory devices using ferromagnetic materials. MRAM has the merits such as fast access time, unlimited read/write endurance and nonvolatility. Although DRAM has many advantages containing high storage density, fast access time and low power consumption, it becomes volatile when the power is turned off. Owing to the attractive advantages of MRAM, MRAM is being spotlighted as an alternative device in the future. MRAM consists of magnetic tunnel junction (MTJ) stack and complementary metal- oxide semiconductor (CMOS). MTJ stacks are composed of various magnetic materials. FePt thin films are used as a pinned layer of MTJ stack. Up to date, an inductively coupled plasma reactive ion etching (ICPRIE) method of MTJ stacks showed better results in terms of etch rate and etch profile than any other methods such as ion milling, chemical assisted ion etching (CAIE), reactive ion etching (RIE). In order to improve etch profiles without redepositon, a better etching process of MTJ stack needs to be developed by using different etch gases and etch parameters. In this research, influences of $O_2$ gas on the etching characteristics of FePt thin films were investigated. FePt thin films were etched using ICPRIE in $CH_4/O_2/Ar$ gas mix. The etch rate and the etch selectivity were investigated in various $O_2$ concentrations. The etch profiles were studied in varying etch parameters such as coil rf power, dc-bias voltage, and gas pressure. TiN was employed as a hard mask. For observation etch profiles, field emission scanning electron microscopy (FESEM) was used.

• Journal of the Korean Vacuum Society
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• v.6 no.3
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• pp.282-286
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• 1997

Reactive ion etching (RIE) characteristics of InP in the $Cl_2$/ CH_4/H_2$ discharges was investigated, as a function of the rf power, substrate temperature and gas composition. It was observed that the etch rate increased as the rf power, sample temperature and/or $Cl_2$ gas concentration increased. Etch rate of about 0.9$\mu\textrm{m}$/min was obtained at the optimum condition of 150W rf power, $180^{\circ}C$ substrate temperature and $10Cl_2$ /$5CH_4/85H_2$ gas ratio. Polymer formation was completely suppressed by adding $Cl_2$ to the $CH_4$ /$H_2$ discharges.

• Transactions of Materials Processing
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• v.14 no.5 s.77
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• pp.473-476
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• 2005

The demand of on-chip total analyzing system with MEMS (micro electro mechanical system) bio/chemical sensor is rapidly increasing. In on-chip total analyzing system, to detect the bio/chemical products with submicron feature size, a filtration system with nano-filter is required. One of the conventional methods to fabricate nano-filter is to use direct patterning or RIE (reactive ion etching). However, those procedures are very costly and are not suitable fur mass production. In this study, we suggested new fabrication method for a nano-filter based on replication process, which is simple and low cost process. After the Si master was fabricated by laser interference lithography and reactive ion etching process, the polymeric mold was replicated by UV-imprint process. Metallic nano-filter was fabricated after removing the polymeric part of metal deposited polymeric mold. Finally, our fabrication method was applied to metallic nano-filter with $1{\mu}m$ pitch size and $0.4{\mu}m$ hole size for bacteria sensor application.

• Journal of the Korean Vacuum Society
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• v.20 no.3
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• pp.225-232
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• 2011

Reactive ion etching (RIE) technique for maskless surface texturing of mc-silicon solar wafers has been applied and succeed in fabricating a grass-like black-silicon with an average reflectance of $4{\pm}1%$ in a wavelength range of 300~1,200 nm. In order to investigate the optimized texturing conditions for mass production of high quantum efficiency solar cell Surface characteristics such as the spatial distribution of average reflectance, micrscopic surface morphology and minority carrier lifetime were monitored for samples from saw-damaged $15.6{\times}15.6\;cm^2$ bare wafer to key-processed wafers as well as the mc-Si solar cells. We observed that RIE textured wafers reveal lower average reflectance along from center to edges by 1% and referred the origin to the non-uniform surface structures with a depth of 2 times deeper and half-maximum width of 3 times. Samples with anti-reflection coating after forming emitter layer also revealed longer minority carrier lifetime by 40% for the edge compared to wafer center due to size effects. As results, mc-Si solar cells with RIE-textured surface also revealed higher efficiency by 2% and better external quantum efficiency by 15% for edge positions with higher height.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.37.1-37.1
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• 2011

Miniaturization of lenses has been widely researched by various scientific and engineering techniques. As a result, micro scaled lens structure could be easily achieved from various fabrication techniques; nevertheless it is still challenging to make nano scaled lenses. This paper reports a novel fabrication method of silicon nanotemplate for nanolens array. The inverse structure of nanolens array was fabricated on silicon substrate by reactive ion etching (RIE) process. This technique has a flexibility to produce different tip shapes using different pattern masks. Once the silicon nano-tip array structure is well-defined using an optimized recipe, it is followed by polymer molding to duplicate nanolens array from the template. Finally, the nanostructures formed on silicon nanotemplate and polymer replica were investigated using FE-SEM and AFM measurements. The nano scaled lens can be manufactured from the same template, also using other replication techniques such as imprinting, injection molding and so on.

• Korean Journal of Optics and Photonics
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• v.15 no.4
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• pp.309-312
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• 2004

Two-dimensionally arrayed nanocolumn lattices were fabricated by using double-exposure laser holographic method. The hexagonal lattice was formed by rotating the sample with 60 degree while the square lattice by 90 degree before the second laser-exposure. The size and period of nanocolumns could be controlled accurately from 125 to 145 nm in diameter and 220 to 290 nm in period for square lattice by changing the incident angle of laser beam. The reactive ion etching for a typical time of 30 min using CH$_4$/H$_2$ plasma enhanced the aspect-ratio by more than 1.5 with a slight increase of the bottom width of columns.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.2
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• pp.41-47
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• 1999

In this paper, we report 3D-simulations of a plasma etching process by employing cell-removal algorithm takes into account the mask shadow effect os well as spillover errors. The developed simulator haas an input interface to take not only an analytic form but a Monte Carlo distribution of the ions. The graphic user interface(GUI) was also built into the simulator for UNIX environment. To demonstrate the capability of 3D-SURFILER(SURface proFILER), we have simulated for a typical contact hole structure with 36,000($30{\times}40{\times}30$) cells, which takes about 20 minutes with 10 Mbytes memory on sun ultra sparc 1. as an exemplary case, we calculated the etch profile during the reactive ion etching(RIE) of a contact hole wherein the aspect ratio is 1.57. Furthermore, we also simulated the dependence of a damage parameter and the evolution of topography as a function of the chamber pressure and the incident ion flux.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.328-329
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• 2012

$SF_6$ gas는 반도체 및 디스플레이 제조공정 중 Dry etch과정에서 널리 사용되는 gas로 자연적으로 존재하는 것이 아닌 사용 목적에 맞춰 인위적으로 제조된 gas이다. 디스플레이 산업에서 $SF_6$ gas가 사용되는 Dry etch 공정은 주로 ${\alpha}$-Si, $Si_3N_4$ 등 Si계열의 박막을 etch하는데 사용된다. 이러한 Si 계열의 박막을 식각하기 위해서는 fluorine, Chlorine 등이 사용된다. fluorine계열의 gas로는 $SF_6$ gas가 대표적이다. 하지만 $SF_6$ gas는 대표적인 온실가스로 지구 온난화의 주범으로 주목받고 있다. 세계적으로 온실가스의 규제에 대한 움직임이 활발하고, 대한민국은 2020년까지 온실가스 감축목표를 '배출전망치(BAU)대비 30% 감축으로' 발표하였다. 따라서 디스플레이 및 반도체 공정에는 GWP (Global warming Potential)에 적용 가능한 대체 가스의 연구가 필요한 상황이다. 온실가스인 $SF_6$를 대체하기 위한 방법으로 GWP가 낮은 $C_3F_6$가스를 이용하여 $Si_3N_4$를 Dry etching 방법인 RIE (Reactive Ion Etching)공정을 한 후 배출되는 가스를 측정하였다. 4인치 P-type 웨이퍼 위에 PECVD (Plasma Enhanced Chemical Vapor Deposition)장비를 이용하여 $Si_3N_4$를 200 nm 증착하였고, Photolithography공정을 통해 Patterning을 한 후 RIE공정을 수행하였다. RIE는 Power : 300 W, Flow rate : 30 sccm, Time : 15 min, Temperature : $15^{\circ}C$, Pressure : Open과 같은 조건으로 공정을 수행하였다. 그리고 SEM (Scanning Electron Microscope)장비를 이용하여 Etching된 단면을 관찰하여 단차를 확인하였다. 또한 Etching 전후 배출가스를 포집하여 GC-MS (Gas Chromatograph-Mass Spectrophotometry)를 측정 및 비교하였다. Etching 전의 경우에는 $N_2$, $O_2$ 등의 가스가 검출되었고, $C_3F_6$ 가스를 이용해 etching 한 후의 경우에는 $C_3F_6$ 계열의 가스가 검출되었다.