• Title/Summary/Keyword: RGA1

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Serological Survey of Leptospiral Antibody in Dairy and Korean Native Cattle (Leptospira 속균(屬菌)에 대한 한우(韓牛) 및 유우(乳牛)의 혈청항체조사(血淸抗體調査))

  • Choi, Won-pil;Lee, Hi-suk
    • Korean Journal of Veterinary Research
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    • v.25 no.1
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    • pp.49-51
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    • 1985
  • A serological survey for antibodies to Leptospira (L.) interrogans in dairy and Korean native cattle in Gyeongbuk area was performed using 6 different living antigens, which were L. icterohaemorrhagiae(RGA), L. canicola(Hond Utrecht IV), L. autumnalis(Akiyami A), L. australis(Ballico), L. pomona(Pomona) and L. hebdomadis(Hebdomadis), by microscopic agglutination test. In the microscopic agglutination test, greater than partial agglutination at a serum dilution of 1:300 or over was recorded as positive. In the dairy cattle(Holstein), four(4.7%) of 86 sera from 13 dairy farms were positive for L. canicola and L. pomona antibodies. In the Korean native cattle, four(3.2%) of 124 sera from the slaughter house in Taegu city were positive for L. canicola, L. icterohaemorrhagiae and L. pomona antibodies. Among the positive sera, L, canicola was dominated in this experiment.

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고에너지 이온빔에 의한 고분자의 micro-hardness 특성변화

  • Choi, Han-Woo;Woo, Hyung-Joo;Hong, Wan;Kim, Gi-Dong;Kim, Jun-Gon;Kim, Young-Seok;Lee, Sam-Geun
    • Proceedings of the Korean Vacuum Society Conference
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    • 1999.07a
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    • pp.112-112
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    • 1999
  • 고분자 표면에 MeV급 이온을 주입하게 되면 화학적, 광학적, 물리적, 전기적 특성 등 기존의 재래식 공정으로는 불가능한 다양한 특성변화가 일어나게 된다. 본 실험에서는 이온 조사에 따른 micro-hardness의 변화에 중점을 두어 관찰하였다. 수 MeV로 가속시킨 Cl과 C 이온을 Kapton, Teflon, PMMA에 조사량을 바꾸어가며 조사하였다. 이때 조사 전후 고분자 시료의 표면 경도는 depth-sensing nanoindentation technique (Nano Indenter II, USA)을 이용하여 측정하였다. 측정깊이는 극표면 효과와 기측효과의 영향을 무시할 수 없는 100nm로 결정하였다. 또한 이와 같은 경도변화를 규명하기 위하여 각각의 시료에 대해 FTIR, Raman, UV-VIS, RBS, XPS 스펙트럼을 측정하였으며, 조사중에 발생되는 가스상 분자들을 RGA를 이용하여 측정하였다. 1 MeV Cl 이온을 Kato에 4x1015ions/cm2 조사하면 경도가 0.35 GPa에서 7.1GPa로 약 20배 정도 증가하게 되며, 이 경도는 stainless steel 경도 2~3 GPa, martensite steel 8~12와 비교하여 보면 상당히 높은 수준임을 알 수 있다. Teflon과 PMMA 시료의 경우 1MeV Cl 이온 4X1015ions/cm2를 조사시키면 각각 경도가 0.31GPa에서 4.1a, 0.30 GPa에서 3.9GPa로 변화하였으며 Kapton에 비하여 상대적으로 경도의 변화가 적음을 알 수 있었다. 이온 주입된 Kapton의 경우 FT-IR측정에 의하여 이온 조사량이 증가함에 따라 C=O 진동, 이미드그룹의 CONH, tertiary amine의 C-N 흡수 피크가 감소되며, 1X1014ions/cm2 이상의 양이 조사되어야 개질변화가 일어남을 알 수 있었다. XPS 측정 결과 Kapton에 조사되는 이온양이 증가할수록 C=O, C-O 및 C-N의 탄소는 감소하고 페닐고리 탄소가 증가함을 알 수 있었다. 또한 이온 조사 중 측정한 RGA에서도 CO 가스가 대량 방출되는 현상을 관찰하였으며 FTIR 및 XPS에서의 C=O 결합의 감소와도 일치하였다. RBS에 의한 CNO 원소의 변화에서도 다른 원소보다 O의 감소가 현저하게 나타남을 확인하였다. UV-VIS 측정을 통해 조사 이온량에 따라 에너지 준위가 변동하여 흡수스펙트럼이 장파장으로 확대됨을 알 수 있었으며, 이는 공액 2중 결합의 형성에 의한 $\pi$-전자 및 기타 결함에 기인한다. PMMA 및 Teflon의 경우 FTIR 측정에 의하여 이온 조사됨에 따라 function group 들의 peak가 세기가 감소되면서 완만해지는 경향을 보이며 원래의 구조를 상실하게 된다. PMMA와 Teflon은 이온 조사가 되면 가교형서보다는 사슬절단이 주로 일어나므로 가교형성이 잘 일어나는 Kapton보다는 상대적으로 경도의 증가가 적음을 알 수 있었다.

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A Study on the Establishment of Reliability Growth Planning for One-shot System (원샷시스템의 신뢰도 성장 계획 설정 방안)

  • Seo, Yang Woo;Jeon, Dong Ju;Kim, So Jung;Kim, Yong Geun
    • Journal of the Korean Society of Systems Engineering
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    • v.16 no.1
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    • pp.1-8
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    • 2020
  • In this paper we proposed to develop the reliability growth planning for the One-shot system using the PM2-Discrete model. The PM2-Discrete is the methodology specifically developed for discrete systems and is the first quantitative method available for formulating detailed plans in the discrete usage domain. First, the parameters RG, RI, T, MS and d of the PM2-Discrete model are set. Second, the case analysis was performed on One-shot system A. Third, the input parameter values were applied to drive the R(t) equation. Finally, using RGA 11 Software, the reliability Growth Planning Curve of One-shot system A was constructed. Also, the sensitivity analyses are performed for the changes of model parameters. The results of this study can be usefully used in establishing the reliability growth planning curve of the One-shot system.

A Method of Reliability Growth Management Test Design for Continuous System (연속형 시스템의 신뢰성 성장 관리 시험 설계 방안)

  • Seo, Yang Woo;Yoon, Jung Hwan;Lee, Seung Sang;Um, Chun Sup
    • Journal of the Korean Society of Systems Engineering
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    • v.16 no.2
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    • pp.87-96
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    • 2020
  • In this paper we proposed the test design method of reliability growth management. First, we presented the process for establishing the reliability growth management test design considering the number of failures and the termination test time. Reliability growth analysis of continuous system was performed in accordance with the test design process presented. In case the reliability test result is not met with the reliability target value after more than three failures occurred, the required test times were analyzed that 1,725 hrs for one corrective action, 1,950 hrs for two corrective actions. If the number of failures is less than three, design a reliability demonstration test according to confidence level 80% and 90% was performed using RGA 11 Software. As a result, it is possible to establish the reliability growth management test design with sufficient use of available resources. The results of this study can be used when establishing a test design for assessment of reliability growth management of all continuous systems.

Characteristics of Water Leakage from Cooling Components in a Storage Ring (방사광 차단용 진공부품의 냉각수 누설 특성)

  • Park, C.D.
    • Journal of the Korean Vacuum Society
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    • v.17 no.1
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    • pp.1-8
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    • 2008
  • We analyzed the characteristics of water leakage from cooling components of the storage ring in the Pohang Light Source. The water leaks led localized pressure bumps and abnormal pressure changes. The leakage also changed the residual gas compositions depending not only on the position between leakage place to gas analyzer but also on on/off switching of ion pump and electron beam. We found that the residual gas analysis of $CH_4$, CO, NO was useful in determining water leaks.

Preprocess of GaAs Epitaxial Layer Growth by MBE (MBE에 의한 GaAs 에피층 성장을 위한 사진처리 과정)

  • Kang, Tae Won;Lee, Jae Jin;Hong, Chi You;Kim, Jin Whang;Chung, Kwan Soo
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.23 no.2
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    • pp.243-248
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    • 1986
  • The impurities in As and Ga sources and the contamination of the GaAs substrate prior to growing of MBE GaAs epitaxial layer have been investigated using RHEED, AES and RGA methods. The as source was contaminated by H2O, CO, CO2 and AsO, and the Ga source was contaminated by H2, H2O, CO and CO2. These contaminants could easily be removed by prebaking the source. On the other hand, GaAs substrate was contaminated principally carbon and oxygen. The oxygen could easily be removed by heating the substrate above 480\ulcorner, and the carbon could also be reduced by sputtering the substrate with 1ke V Ar+. The chemically etched substrate surface prior to growing the layer was rough, but it was made to be smooth and clean by heating it above 530 \ulcorner.

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Recovery of Valuable Metals from the Desulfurizing Spent Catalyst Used in Domestic Petrochemical Industry (국내 석유공장의 탈황 폐촉매로부터 유가금속의 회수에 관한 연구)

  • 김종화;양종규
    • Resources Recycling
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    • v.4 no.3
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    • pp.2-9
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    • 1995
  • The rccoverg and separation pracess of nikcl, vanadium and molybdenum from spent dcsulfilrizing catalyst ofpetrochemical rndustries was studied. Tnis process was canied out wet process which is consist of roasting, ammonialeaching and solve111 exDaction techniqcs. The metal ions of NI, V and Mo as vduable compollents were treated byroasting them a1 low lernperatuc, 400$^{\circ}$C in first dep, and then dlssah'ed nu1 at 80$^{\circ}$C wlth ammonium cabonate mlulion.Aftcr cooling them a1 room tempertaure, vanadium wa rccavered from mathcr iiquur in thc f n m of precipitate, sodiumvanadales The Secand slep, roasting the catalyst which is added sodium carbonate ul IOOO"C, was employed. Leachingwith distilled ~ a l e rga ve a iwo phase resultant, solutio~c~a ntaning Ni, V and Mo and solid residue containing sibca,alurmniu~n and iron. A solvcnt exlclction technique uslng vvriuus extractanls, MSP-8, TOIUC, LIX64Pi was eflecnve farthc extraclion and scparation ol thrcc mcfals from thc ammonical 11qou1 thc ammonical 11qou1.

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Analysis of Volatile Organic Compounds Emitted from Electronic Parts in PC/Monitor Set (PC/Monitor 구성 전자부품에서 방출되는 휘발성 유기화합물의 분석)

  • Ri, Chang Seop;Choe, Jong Woo;Baek, Kyu Won
    • Journal of the Korean Chemical Society
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    • v.44 no.4
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    • pp.343-349
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    • 2000
  • Volatile Organic Compounds(VOCs) emitted form electronicSince toluene, xylene, cyclohexanone, and benzofuran will bring on the deleterious smell and the health risk, eventhough very small amount of these areexposed to human body, quantitative analysis was achieved by GC-MS system. As a result of these analyses, except PCB(CEM-1) of which is one of the electronic parts, the left of electronic parts represented, imme-diately form 30 minutes to 1 hour after heating, the trends that toluene, xylene, cyclohexanone and phenol were consecuticely emitted very high. and toluene, xylene, phenol, cyclohexanone, and benzofuran from most of the electronic parts were emitted very frequently within the measuring period. Finally, Trans of electronic parts showed the highest concentration of emission, and xylene(550~2482 ${\mu}g/m^2$) was the most noticeably emitting compound of VOCs.

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KSTAR ICRF 방전세정 플라즈마의 특성분석

  • Kim, Seon-Ho;Wang, Seon-Jeong;Gwak, Jong-Gu;Hong, Seok-Ho
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.295-295
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    • 2010
  • KSTAR(Korea Superconducting Tokamak Advanced Research) 토카막에 설치되어 있는 ICRF(Ion Cyclotron Range Frequency) 시스템을 이용한 방전세정을 2008년에 이어 2009 KSTAR 플라즈마 campaign 동안에도 시행하였다. ICRF 시스템을 이용한 방전세정인 ICWC(Ion Cyclotron Wall Cleaning)는 ITER와 DEMO 같은 초전도 자석을 이용하는 토카막에서 토카막 shot 중간에 자장을 낮추지 않고 바로 방전 세정을 할 수 있는 방법이다. 토카막에서 방전세정은 탄소나 산소 화합물과 같은 불순물을 제거하여 방사에 의한 플라즈마 냉각을 막고 토카막 초기 start-up시 진공 챔버 벽면으로부터 의도하지 않은 연료주입을 제거하는 역할을 한다. 본 연구에서는 ICWC 방전 세정 플라즈마의 밀도특성과 균일도를 간섭계와 $H_{\alpha}$ line 세기를 통해 관측하고 RGA를 통해서 C, $H_2O$, $O^2$ 불순물의 제거량을 파악하는 한편 토카막의 신뢰성 있는 start-up을 위해 요구되는 벽면에서 토카막 방전가스의 제거량을 HD양을 통해서 조사하였다. 플라즈마 선적분 밀도는 약 $1{\sim}3{\times}10^{17}#/m^2$로 측정되었는데 이는 보통 He을 이용한 방전세정 플라즈마의 밀도에 해당한다. 한편 $H_{\alpha}$ line의 세기를 통해 ICWC 방전 플라즈마의 균일도를 살펴본 결과 안테나 전류띠의 중간이 아닌 끝부분에서 $H_{\alpha}$의 세기가 큰 것으로 나타났는데 이는 ICWC 플라즈마가 Inductive 방전보다는 capacitive 방전에 의해 생성되는 것으로 추정된다. ICWC 방전에서 C, $H_2O$, $O_2$ 불순물의 제거율은 각각 약 $4.2{\times}10^{-5}\;mbar{\cdot}l/sec$, $1.4{\times}10^{-3}\;mbar{\cdot}l/sec$ 그리고 $1.72{\times}10^{-4}\;mbar{\cdot}l/sec$로 각각 나타났는데 ICWC shot이 진행될수록 이 양은 점점 줄어들었다. 대표적인 He/$H_2$, He ICWC 방전 shot인 2118, 2123 shot에서 벽면에서 $D_2$의 제거율은 각각 약 $0.12\;mbar{\cdot}l/sec$$3.9{\times}10^{-3}\;mbar{\cdot}l/sec$로 나타났다. 이는 수소의 첨가로 인해 HD의 형태로 $D_2$의 제거율이 증가되었기 때문이다. 한편 $H_2$의 첨가는 챔버 벽면에 흡착되는 $H_2$ 양을 또한 증가시키므로 차후에 $H_2$ 만을 제거하는 He ICWC를 수행해야 할 것이다.

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Adsorption of residual gases on carbon nanotubes and their field emission properties

  • Lee, Han-Sung;Jang, Eun-Soo;Goak, Jeung-Choon;Kim, Jin-Hee;Lee, Nae-Sung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.51-51
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    • 2008
  • Carbon nanotubes (CNTs) have long been reported as an ideal material due to their excellent electrical conductivity and chemical and mechanical stability as well as their high aspect ratios for field emission devices. CNT emitters made by screen printing the organic binder-based CNT paste may act as a source to release gases inside a vacuum panel. These residual gases may cause a catastrophic damage by electrical arcing or ion bombardment to the vacuum microelectronic devices and may change their physical or electrical properties by adsorbing on the CNT emitter surface. In this study, we analyzed the composition of residual gases inside the vacuum-sealed panel by residual gas analyzer (RGA), investigating the effects of individual gases of different kinds at several pressures on the field emission characteristics of CNT emitters. The residual gases included $H_2$, CO, $CO_2$, $N_2$, $CH_4$, $H_2O$, $C_2H_6$, and Ar. Effect of residual gases on the field emission was studied by observing the variation of the pulse voltages with the duty ratio of3.3% to keep the constant emission current of $28{\mu}A$. Each gas species was introduced to a vacuum chamber up to three different pressures ($5\times10^{-7}$, $5\times10^{-6}$, and $5\times10^{-5}$ torr) each for 1 h while electron emission was continued. The three different pressure regions were separated by keeping a high vacuum of $\sim10^{-8}$ torr for a 1 h. The emission was terminated 6 h after the third gas exposure was completed. Field emission characteristics under residual gases will be discussed in terms of their adsorption and desorption on the surface of CNTs and the resultant change of work function.

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