• Journal of Institute of Control, Robotics and Systems
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• v.14 no.6
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• pp.608-614
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• 2008

This paper describes a location tracking system to guide landing process of an Unmanned Helicopter(UMH) exploiting MIT Cricket nodes. For automatic landing of a UMH, a precise positioning system is indispensable. However, GPS(Global Positioning System) is inadequate for tracking the three dimensional position of a UMH because of large positioning errors. The Cricket systems use Time-Difference-of-Arrival(TDoA) method with ultrasonic and RF(Radio Frequency) signals to measure distances. They operate in passive mode in that a listener attached to a moving device receives distance signals from several beacons located at fixed points on ground. Inevitably, this passive type of implementation causes large disturbances in measuring distances between beacons and the listener due to wind blow from propeller and turbulence of UMH body. To cope with this problem, we proposed active type of implementation for positioning a UMH. In this implementation, a beacon is set up at UMH body and four listeners are located at ground area at least where the UMH will land. A pair of Ultrasonic and RF signals from the beacon arrives at several listeners to calculate the position of the UMH. The distance signals among listeners are synchronized with a counter value appended to each distance signals from the beacon.

• Journal of Magnetics
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• v.22 no.2
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• pp.238-243
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• 2017

In this research, we report the preliminary results of an insertional type parallel transmission (pTx) array that has 7-elements that are placed in the space above a patient table as a transmit (Tx) coil to give an RF transmission ($B_1{^+}$) field for the body object of a 3 Tesla (T) MRI system. In previous research, we have tried to compare the performances of different coil elements and array geometries for a pTx body image. Based on these results, we attempt to obtain a human image with the proposed pTx array. Through the simulation and experimental results, we introduce a possible structure of multi-channel Tx array and verify the utility of a multi-channel Tx body image using $B_1{^+}$ shimming. The insertional pTx array, combined with a receiver (Rx) array coil, provides an enhanced $B_1{^+}$ field homogeneity in a large ROI image as a result of $B_1{^+}$ shimming applied over the full body size object. Through this research, we hope to determine the usefulness of the proposed insertional type RF coil combination for 3 T body imaging.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.12a
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• pp.81-86
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• 2006

In this paper, we designed the cylindrical type light source that had a electromagnetic principle of inductively coupled plasma, and measured its electrical-optical properties. Using the principle of transformer, electrically equivalent circuit of cylindrical type light source was analyzed. According to the parameters of electromagnetic induction which were diameter of coil with 0.3~1.2 mm, number of turns with 4~12 turns, distance with 40~120 mm and RF power with 10~150 W, the electrical and optical properties were measured. When diameter of coil was 0.3 mm, number of turns was 8 turns and distance was 40 mm, the highest brightness of 29,730 $cd/m^2$ was shown with RF power 150 W. The relationship between electromagnetic induction and plasma discharges was shown by mode transition from E-mode to H-mode.

• Journal of Electrical Engineering and Technology
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• v.5 no.1
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• pp.146-150
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• 2010

A new type of dye-sensitized solar cell (DSC) based on a porous type Ti electrode without using a transparent conductive oxide (TCO) layer is fabricated for low-cost high-efficient solar cell application. The TCO-free DSC is composed of a glass substrate/dye-sensitized $TiO_2$ nanoparticle/porous Ti layer/electrolyte/Pt sputtered counter electrode. The porous Ti electrode (~350 nm thickness) with high conductivity can collect electrons from the $TiO_2$ layer and allows the ionic diffusion of $I^-/I_3{^-}$ through the hole. The vacuum annealing treatment is important with respect to the interfacial necking between the metal Ti and porous $TiO_2$ layer. The efficiency of the prepared TCO-free DSC sample is about 3.5% (ff: 0.48, $V_{oc}$: 0.64V, $J_{sc}$: 11.14 mA/$cm^2$).

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.17 no.4
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• pp.8-12
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• 2003

Characteristics of optical transceiver module in radio frequency(RF) band were investigated with TO-can packaged Fabry-Perot laser diode(FP-LD). R-L-C parameters for equivalent circuit model of the LD were extracted with an impedance analyzer. With this model, impedance matching to the packaged LD could be performed by eliminating inductive components of the leads in the package by using lumped chip capacitors that have opposite reactance, while it shows resonance dip in low frequency band. The resonance dip could be removed using lumped elements for impedance matching by shifting the resonance frequency to the region out of interest.

• The KIPS Transactions:PartA
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• v.10A no.3
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• pp.255-260
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• 2003

In recent, as a typical example of RFID, the contactless IC card is widely used in traffic, access control system and so forth. And its use becomes a general tendency more and more because of the development of RF technology and improvement of requirement for user convenience. This paper describes the hardware module to process embedded contactless protocol for implementation contactless IC card. And the hardware module consists of analog circuits and specific digital logic circuits. This paper also describes more effective design method of contactless IC card, which method separates into analog circuit parts, digital logic circuit part, and software parts according to the role of the design parts.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04a
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• pp.65-66
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• 2008

The realization and origin of p-type ZnO are main issue for photoelectronic devices based on ZnO material. N-doped and nominally undoped p-type ZnO films were achieved on silicon (100) and homo-buffer layers by RF magnetron sputtering and post in-situ annealing. The undoped film shows high hole mobility of 1201 $cm^2V^{-1}s^{-1}$ and low resistivity of $0.0454\Omega{\cdot}cm$ with hole concentration of $1.145\times10^{17}cm^{-3}$. The photoluminescence(PL) spectra show the emissions related to FE, DAP and defects of $V_{Zn}$, $V_O$, $Zn_O$, $O_i$ and $O_{Zn}$.

• Journal of Ceramic Processing Research
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• v.13 no.spc2
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• pp.336-340
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• 2012

Wide band gap p-type hydrogenated amorphous silicon oxide (a-SiO:H) buffer layer has been used at the interface of transparent conductive oxide (TCO) and hydrogenated amorphous silicon (a-Si:H) p-type layer of a p-i-n type a-Si:H solar cell. Introduction of 5 nm thick buffer layer improves in blue response of the cell along with 0.5% enhancement of photovoltaic conversion efficiency (η). The cells with buffer layer show higher open circuit voltage (Voc), fill factor (FF), short circuit current density (Jsc) and improved blue response with respect to the cell without buffer layer.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.435-435
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• 2012

ITER를 비롯한 실증로나 상용로급 토카막에서는 중성빔 가열이나 전류구동을 위해 1MeV이상의 빔 에너지가 요구된다. 빔 출력이 가속전압의 5/2승에 비례함에도 불구하고 양이온 빔의 경우 에너지가 높아지면 빔의 중성화 효율이 급격히 감소하여 ITER NBI의 경우 양이온 빔의 중성화 효율은 0%에 가깝다. 한편 음이온 빔은 1MeV 이상의 에너지영역에서도 빔 에너지와 거의 무관하게 60% 정도의 중성화 효율을 갖는다. 따라서 ITER는 음이온 빔을 바탕으로 한 중성빔 가열장치(N-NBI)를 채택하고 있다. 우리나라의 핵융합연구가 핵융합 발전을 지향하는한 N-NBI에 대한 연구를 시작해야 하며 그 출발점으로 음이온원 개념설계를 시작하였다. 개념설계는 음이온원 개발과정을 통해 1) 음이온 생성원리 규명, 2) 음 이온원 핵심기술 확보, 3) 음이온 및 음이온 빔 관련 진단 등을 연구할 수 있는 축소규모의 proto-type 음이온원 개발을 목표로 하였다. 음이온원 개발은, 초기에는 KAERI NB test stand 및 KAERI 이온원의 플라즈마 버켓을 활용하기 위해 filament-arc type으로 시작하지만 어느정도 기반이 확립되면 플라즈마 버켓의 electron dump를 제거하고 그 자리에 RF driver를 장착하여 궁극적으로 RF 음이온원을 개발할 계획이다. 본 학회에 발표하는 포스터는 filament-arc type 음이온원에 대한 개념설계이다. 설계된 음이온원은 Tent-type 자장필터를 장착하며, 0.5A의 수소 음이온빔 인출을 목표로 하고 있다. 이를 위해 플라즈마 버켓, 세슘 공급시스템, bias plate, 플라즈마 그리드, electron deflection 자석이 설치된 인출 그리드, 접지 그리드 등에 대한 개념설계가 이루어 졌다. 이 외에도 음이온원 전원과 진단 시스템에 대해서도 논의하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.6
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• pp.575-579
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• 2008

Al-doped p-type ZnO films were fabricated on n-Si (100) and homo-buffer layers in pure oxygen at $450^{\circ}C$ of by RF magnetron sputtering. Target was ZnO ceramic mixed with 2 wt% $Al_2O_3$. XRD spectra show that the Al-doped ZnO thin films have ZnO crystal structure and homo-buffer layers are beneficial to Al-doped ZnO films to grow along c-axis. Hall Effect experiments with Van der Pauw configuration show that p-type carrier concentrations are ranged from $1.66{\times}10^{16}$ to $4.04{\times}10^{18}\;cm^{-3}$, mobilities from 0.194 to $2.3\;cm^2V^{-1}s^{-1}$ and resistivities from 7.97 to $18.4\;{\Omega}cm$. p-type sample has density of $5.40\;cm^{-3}$ which is smaller than theoretically calculated value of $5.67\;cm^{-3}$. XPS spectra show that Ols has O-O and Zn-O structures and Al2p has only Al-O structure. P-ZnO:Al/n-ZnO:Al junctions were fabricated by magnetron sputtering. V-I curves show that the p-n junctions have rectifying characteristics.