• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.97-98
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• 2005

To investigate the ZnO thin films which is interested in the next generation of short wavelength LEDs and Lasers, our ZnO thin films were deposited by RF sputtering system. Phosphorus (P) and arsenic (As) were diffused into about 2.1${\mu}m$ ZnO thin films sputtered by RF magnetron sputtering system mn ampoule tube which was below $5\times10^{-7}$ Torr. The dopant sources of phosphorus and arsenic were $Zn_3P_2$ and $ZnAs_2$. Those diffusion was perform at 500, 600, and 700$^{\circ}C$ during 3hr. We find the condition of p-type ZnO whose diffusion condition is 700$^{\circ}C$, 3hr Our p-type ZnO thin film has not only very high carrier concentration of above $10^{19}/cm^3$ but also low resistivity of $5\times10^{-3}{\Omega}cm$.

• 한국전기전자재료학회논문지
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• 제36권2호
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• pp.170-174
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• 2023

Nickel oxide is a nonstoichiometric transparent conductive oxide with p-type conductivity, a wide-band energy gap of 3.4~4.0 eV, and excellent chemical stability, making it a very important candidate as a material for bipolar devices. P-type conductivity in Transparent Conductive Oxides (TCO) is controlled by the oxygen vacancy concentration. During the TCO film deposition process, additional oxygen diffusing into the NiO structure causes the formation of Ni 3p ions and Ni vacancies. This eventually affects the hole concentration of the p-type oxide thin film. In this work, the surface morphology and the electrical characteristics were confirmed in accordance with the annealing atmosphere of the nickel oxide thin film.

• 한국전자파학회논문지
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• 제29권4호
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• pp.256-265
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• 2018

본 논문에서는 PN 유도 법칙을 기반으로 동작하는 능동 RF 탐색기에 대한 반복형 능동 유인체의 재밍 환경에서 공중 플랫폼의 생존성을 분석한다. 플랫폼의 기동, 유인체의 RF 제원(spec), 탐색기의 접근 거리 및 방향 등 다른 조건의 여러 조우 시나리오에서 플랫폼에 대한 탐색기의 miss distance를 계산한다. Miss distance와 근접신관거리와의 비교를 통해 플랫폼의 생존 여부를 판별하며, 이를 기반으로 몇몇 조우 시나리오에서 플랫폼 생존 영역을 도출한다.

• 한국표면공학회지
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• 제29권6호
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• pp.739-744
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• 1996

Lanthanide diphthalocyanines have interesting properties on electrochemical and chemical redox reactions. It is however, difficult to use because of thier short device life. Plasma-polymerization attends to improvement thier device life. Yb-diphthalocyanine ($YbPc_2$) polymer film was deposited in a parallel plate electrodes-type RF plasma reactor. $YbPc_2$ was sublimed into the argon plasma, and polymer film was obtained on a substrate. Radio frequency was constant of 13.56MHz. Pressure of argon gas, sublimation rate of $YbPc_2$ and RF power were variable parameters depending on film quality. Surface of polymer films include a lot of sub-micron order lumps. It was indicated that size of lumps depends on polymerization degree controled by parameters. Size of lumps and polymerization degree are increased with RF power. However, by the high RF power over 40W, polymerization degree is decreased with RF power and surface of film is rough. In condition of RF power is high, polymerization will compete with etching of film. We obtained good films for electrochromic display with RF power of 20W, argon gas pressure of 8.0 Pa and sublimationrate of $1.2 \times 10$ mol/min, and good films for gas sensor with RF power of 30W, argon gas pressure of 10.6Pa and sublimation rate of $1.2 \times 10$ mol/min.

• 한국세라믹학회지
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• 제37권5호
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• pp.432-437
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• 2000

Thermoelectric properties of p-type SiGe alloys prepared by a RF inductive furnace were investigated. Non-doped Si80Ge20 alloys were fabricated by control of the quantity of volatile Ge. The carrier of p-type SiGe alloy was controlled by B-doping. B doped p-type SiGe alloys were synthesized by melting the mixture of Ge and Si containing B. The effects of sintering/annealing conditions and compaction pressure on thermoelectric properties (electrical conductivity and Seebeck coefficient) were investigated. For nondoped SiGe alloys, electrical conductivity increased with increasing temperatures and Seebeck coefficient was measured negative showing a typical n-type semiconductivity. On the other hand, B-doped SiGe alloys exhibited positive Seebeck coefficient and their electrical conductivity decreased with increasing temperatures. Thermoelectric properties were more sensitive to compaction pressure than annealing time. The highest power factor obtained in this work was 8.89${\times}$10-6J/cm$.$K2$.$s for 1 at% B-doped SiGe alloy.

• 한국철도학회:학술대회논문집
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• 한국철도학회 2006년도 추계학술대회 논문집
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• pp.771-778
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• 2006

Before the Flap type GATE is introduced until, the Turnstile type GATE was plentifully used. The Turnstile type GATE is used plentifully from the Seoul metro, Busan Transportation Corporation and Korea Railroad Corporation. From the Turnstile type GATE, the micro switch breakdown is occurred by the contact of the micro switch which perceives a Turnstile rotation and the cam. The breakdown is cause of the passenger inconveniently. In order to prevent the breakdown which is caused by Micro switch contact, Microswitch support used the sensor in Turnstile rotation perception. The sensor which is used in test is Photo Sensor and Reed Sensor two type. The test result Reed Sensor was suitable in underground environment. When using the RF card, RF card processing came to be quick

• 한국철도학회:학술대회논문집
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• 한국철도학회 2004년도 춘계학술대회 논문집
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• pp.1362-1364
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• 2004

Recently, GPS device is used in various industries. GPS can calculate a moving train's velocity, location, and direction. In this paper, we examine a train approaching alarm device's application, possibility, and merits in the train system. Especially, we investigate solubility of trouble caused by using GPS and RF system for detecting the train's velocity, the location and direction recognition.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2002년도 동계연구발표회 논문개요집
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• pp.218-219
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• 2002

Recently, RF lumped-element devices are demanded strongly in application of hand-held mobile communication equipments. Many workers have been reported RF integrated inductor as well as air cores. In order to achieve the high Q value, they removed backside of substrate by micro machining process [1] and also another MEMS-like approach such as levitated structure [2]. These approaches are capable of suppressing the parasitic effects, but low reproducibility and high cost problems remain. (omitted)

• 한국항해항만학회:학술대회논문집
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• 한국항해항만학회 1996년도 The Korean Institute of Navigation 1996년도 한·중 국제학술 심포지움 및 추계학술발표회 논문집
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• pp.111-116
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• 1996

To realize the RF layer of Rubber Ferrite-Air-Solid Ferrite(RF-A-F) that proposed by Y.Naito it is tried to grasp the formulation of composition by varying the ratio of mole and element of Complex Isotropic Ferrite Nix-A0.1-Zn(1-x-0.1)*Fe2O4 As a result it was found that the characteristics of the electromagnetic wave absorber constructed by the selected formulation of compositionin in RF-A-F type were improved.

• 한국산학기술학회:학술대회논문집
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• 한국산학기술학회 2010년도 춘계학술발표논문집 1부
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• pp.124-127
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• 2010

본 논문에서는 소형 SMD 솔레노이드 형태의 RF 칩 인덕터의 최적 구조를 도출하였다. $1.0\times0.5\times0.5mm^3$ 크기의 96% $Al_2O_3$ 코아는 $40{\mu}m$ 직경의 구리 코일을 4회 권선하여 8.57nH의 인덕턴스, 37.6의 품질계수와 6.05GHz의 SRF를 가진다. $40{\mu}m$ 직경의 구리 코일을 0.35mm 솔레노이드 길이로 중앙에 6회 권선하였을 경우가 250MHz11.2nH의 인덕턴스, 29.8의 품질계수와 5.6GHz의 SRF로 가장 우수하였다.