• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.100.2-100.2
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• 2010

Superstrate형 실리콘 박막 태양전지에서 전면전극으로 사용되는 투명전도막의 표면형상은 태양전지내로 입사하는 태양광의 표면산란에 영향을 미치며 표면산란 증가를 통한 광 포획 및 단락전류밀도 향상을 통하여 태양전지 효율을 증대시키는 중요한 역할을 한다. 기존에 실리콘박막 태양전지용으로 많이 사용되는 상용 Asahi-U형 투명전도막은 수소 플라즈마에 대한 안정성이 낮고 입사광의 장파장 대역에서의 산란특성이 낮아 실리콘 박막 태양전지의 고효율화에 한계점이 있었다. 최근에 Asahi-U형 투명전도막을 대신하여 ZnO계 투명전도막을 전면전극으로 사용하려는 연구가 활발히 진행되고 있으며 Al을 토핑원소로 사용하는 ZnO:Al 투명전도막은 우수한 전기적, 광학적 특성과 수소플라즈마 안정성 및 저 비용 등의 우수한 장점을 갖고 있다. 스퍼터링 방식으로 제조된 ZnO:Al 투명전도막의 표면형상은 일반적으로 증착 후 습식식각을 통하여 조절되며 식각 전 박막의 미세구조에 영향을 받는 것으로 알려져 있다. 또한 습식 식각 이후의 표면거칠기에 따라 다양한 광학적, 전기적 특성을 나타낸다. 본 연구에서는 in-line RF-magnetron sputter 장비를 이용하여 다양한 공정조건하에서 ZnO:Al 투명전도막을 제조하고 증착된 박막의 미세구조 특성에 따른 습식식각 이후의 표면형상 변화 및 전기적 광학적 특성 변화를 조사하였다.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2011년도 춘계학술대회
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• pp.696-698
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• 2011

박막 벌크 음향 공진 소자 (Film Bulk Acoustic Resonator, FBAR) 기술은 현 실리콘 공정 기술과 호환되며 차세대 초소형 RF소자 구현을 가능하게 하는 기술로 각광받아 오고 있다. FBAR 소자 제작 시 박막 증착에 RF 스퍼터링 (sputtering) 방식을 이용하는 경우 산소 ($O_2$) 및 아르곤 (Ar)의 혼합가스 분위기에서 증착하는 것이 통상적이다. 본 논문에서는 아산화질소 ($N_2O$) 및 아르곤 (Ar)의 혼합가스 분위기에서 RF 스퍼터링 방식으로 증착된 고품위의 산화아연 (Zinc Oxide, ZnO) 압전(piezoelectric) 박막을 적용하여 FBAR 소자를 제작하는 새로운 방법을 제시한다. 이때 소자 제작과정에 다양한 조건에서의 열처리 과정 (thermal annealing treatments)이 수반되었으며, 이러한 공정조건이 제작된 FBAR 소자의 공진특성 (resonance characteristics)에 미치는 영향을 반사손실 (return loss)의 측면에서 조사하였다. 결과적으로, 공정 조건을 최적화함으로써 ~2.9 MHz 에서 매우 우수한 공진특성을 가지는 FBAR 소자를 제작할 수 있었다.

• Progress in Superconductivity
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• 제5권2호
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• pp.105-108
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• 2004

We have studied effects of in-situ annealing on the fabrication of superconducting MgB$_2$ thin films prepared by rf magnetron co-sputtering. The Films were deposited on A1$_2$O$_3$ (1102) substrates at room temperature by using Mg and B targets. To trap remnant $O_2$ gas in the chamber, we used 20 mtorr Af sputter-gas balanced with 5 mol % of H$_2$ gas. To enhance adhesion to the substrate a thin layer of B was deposited prior to the codeposition of Mg and B. After completion of the film deposition, an additional Mg layer was deposited on top to compensate for Mg loss during the subsequent in-situ annealing. We have investigated the effects of two most important annealing parameters that are the Mg-to-B composition ratio and the annealing temperature. The range of the Mg-to-B composition ratio was from 0.42 to 0.85, and that of the annealing temperature was 500 $^{\circ}C$∼750 $^{\circ}C$. The Best result was obtained for the composition ratio of about 10% Mg excess from the stoichiometry and the annealing temperature of 700 $^{\circ}C$. Based on these results, we obtained films with T$_{c}$ : 36.5 K by further refining the fabrication process.s.

• Current Photovoltaic Research
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• 제3권3호
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• pp.101-105
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• 2015

ZnO is gathering great interest for large square optoelectrical devices of flat panel display (FHD) and solar cell as a transparent conductive oxide (TCO). Herewith, Mg and IIIA (Al, In) co-doped ZnO films were prepared on SLG substrate using RF magnetron sputtering system. The effect of variation of atomic weight % of Mg and ZnO have been investigated. The atomic weight % Al and In are of 3% and kept constant throughout. The numbers of samples were prepared according to their different contents, which are $M_{3%}AZO_{94%}$, $M_{4%}AZO_{93%}-(MAZO)$ and $M_{3%}IZO_{94%}$, $M_{4%}IZO_{93%}-(MIZO)$ respectively. A RF power of 225 W and working pressure of 6 m Torr was used for the deposition at $300^{\circ}C$. All of the two thin film show good uniformity in field emission scanning electron microscopy image. $M_{3%}AZO_{94%}$ thin film shows overall better performance among the all. The film shows the best lowest resistivity, carrier concentration, mobility and Sheet resistance and is found to be are of $8.16{\times}10^{-4}{\Omega}cm$, $4.372{\times}10^{20}/cm^3$, $17.5cm^2/vs$ and $8.9{\Omega}/sq$ respectively. Also $M_{3%}AZO_{94%}$ thin film shows the relatively high optical band gap energy of 3.7 eV with high transmittance more than 80% in visible region required for the better solar cell performance.

• 한국재료학회지
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• 제21권6호
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• pp.341-346
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• 2011

In this study, we inserted a Zn buffer layer into a AZO/p-type a-si:H layer interface in order to lower the contact resistance of the interface. For the Zn layer, the deposition was conducted at 5 nm, 7 nm and 10 nm using the rf-magnetron sputtering method. The results were compared to that of the AZO film to discuss the possibility of the Zn layer being used as a transparent conductive oxide thin film for application in the silicon heterojunction solar cell. We used the rf-magnetron sputtering method to fabricate Al 2 wt.% of Al-doped ZnO (AZO) film as a transparent conductive oxide (TCO). We analyzed the electro-optical properties of the ZnO as well as the interface properties of the AZO/p-type a-Si:H layer. After inserting a buffer layer into the AZO/p-type a-Si:H layers to enhance the interface properties, we measured the contact resistance of the layers using a CTLM (circular transmission line model) pattern, the depth profile of the layers using AES (auger electron spectroscopy), and the changes in the properties of the AZO thin film through heat treatment. We investigated the effects of the interface properties of the AZO/p-type a-Si:H layer on the characteristics of silicon heterojunction solar cells and the way to improve the interface properties. When depositing AZO thin film on a-Si layer, oxygen atoms are diffused from the AZO thin film towards the a-Si layer. Thus, the characteristics of the solar cells deteriorate due to the created oxide film. While a diffusion of Zn occurs toward the a-Si in the case of AZO used as TCO, the diffusion of In occurs toward a-Si in the case of ITO used as TCO.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.430-430
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• 2007

In this study, the nematic liquid crystal (NLC) alignment effects treated on the ZnO thin film layers using ion beam irradiation were successfully studied for the first time. The ZnO thin films were deposited on indium-tin-oxide (ITO) coated glass substrates by rf-sputter and The ZnO thin films were deposited at the three kinds of rf power. The used DuoPIGatron type ion beam system, which can be advantageous in a large area with high density plasma generation. The ion beam parameters were as follows: energy of 1800 eV, exposure time of 1 min and ion beam current of $4\;mA/cm^2$ at exposure angles of $15^{\circ}$, $30^{\circ}$, $45^{\circ}$, and $60^{\circ}$. The homogeneous and homeotropic LC aligning capabilities treated on the ZnO thin film surface with ion beam exposure of $45^{\circ}$ for 1 min can be achieved. The low pretilt angle for a NLC treated on the ZnO thin film surface with ion beam irradiation for all incident angles was measured. The good LC alignment treated on the ZnO thin film with ion beam exposure at rf power of 150 W can be measure. For identifying surfaces topography of the ZnO thin films, atomic force microscopy (AFM) was introduced. After ion beam irradiation, test samples were fabricated in an anti-parallel configuration with a cell gap of $60{\mu}m$.

• 전기전자학회논문지
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• 제26권2호
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• pp.232-239
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• 2022

우리는 인산리튬(Li₃PO₄) 고체 상태 박막에 대한 후열처리의 영향을 분석했다. Li₃PO₄ 박막은 무선 주파수(RF) 스퍼터링에 의해 증착되었으며, 이후 200-400 ℃에서 박막을 열처리 했다. 샘플 표면의 SEM 이미지는 열처리된 샘플가 열처리되지 않은 샘플 사이의 형태에 유의미한 차이를 나타내지 않았다. XRD 분석은 샘플이 비정질과 유사한 구조로 구성되어 있음을 나타낸다. 열처리 후 결합 에너지의 변화는 XPS 분석에 의해 확인하였으며, -6 V에서의 누설 전류 밀도는 400 ℃에서 열처리된 소자가 열처리되지 않은 소자에 비해 약 7.15배 더 낮은 것으로 측정되었다. 후열처리 온도가 증가함에 따라 누설전류가 감소함을 확인하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 추계학술대회 논문집 전기물성,응용부문
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• pp.103-105
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• 2001

ZnO thin films on glass substrate were deposited by RF sputter with various $Ar/O_2$ gas ratio. Crystallinities, surface morphologies, and electrical properties of the films were investigated by XRD(x-ray diffractometer), and SEM (scanning electron microscopy) analyses. The facing targets sputtering system can deposit thin film at plasma free condition and change the deposition condition in wide range. We suggested that a very suitable $Ar/O_2$ gas of ratio should be 50/50 for preparation of high quality ZnO films with good C-axis orientation.

• JSTS:Journal of Semiconductor Technology and Science
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• 제16권2호
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• pp.210-214
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• 2016

In this paper, the decrease in the contact resistance of Ni germanide/Ge contact was studied as a function of the thickness of the antimony (Sb) interlayer for high performance Ge MOSFETs. Sb layers with various thickness of 2, 5, 8 and 12 nm were deposited by RF-Magnetron sputter on n-type Ge on Si wafers, followed by in situ deposition of 15nm-thick Ni film. The contact resistance of samples with the Sb interlayer was lower than that of the reference sample without the Sb interlayer. We found that the Sb interlayer can lower the contact resistance of Ni germanide/Ge contact but the reduction of contact resistance becomes saturated as the Sb interlayer thickness increases. The proposed method is useful for high performance n-channel Ge MOSFETs.

• 한국세라믹학회지
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• 제46권1호
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• pp.10-15
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• 2009

We have fabricated silicon-rich silica thin films via RF magnetron sputtering using a SiO target. Thickness evolution and microstructure change of such $SiO_x$ (1$SiO_x$ thin films turned out to be mainly responsible for the increase of refractive index.