• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1547-1550
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• 2007

$YVO_4:Eu^{3+}$ thin film phosphor samples have been deposited by using RF magnetron sputter deposition technique with various deposition temperatures. The Effect of deposition temperature (room temperature to $450\;^{\circ}C$) on morphological, crystal structure, and luminescence properties of $YVO_4:Eu^{3+}$ thin film phosphor has also been investigated. As the deposition temperature increases, the size of crystal grain and surface roughness of thin film increases principally and its crystallinity also increases. It is found that the asdeposited $YVO_4:Eu^{3+}$ thin film excited either photon or electron shows typical luminescence spectra successfully. CIE color coordinates of $YVO_4:Eu^{3+}$ thin film phosphor with increasing deposition temperature moved towards more reddish region.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.446-447
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• 2007

The rapid thermal annealing effect of transparent IZTO(indium zinc oxide) and IAZO(indium alminium zinc oxide) films grown on glass substrate for solar cell or flat panel displays(FPDs) was studied. We prepared IZTO using RF magnetron sputtering and IAZO using DC co-sputtering method. Subsequently, using rapid thermal annealing(RTA) system, prepared IZTO and IAZO films were annealed at 300, 400, 500, $600^{\circ}C$ for 90sec. In addition, Electrical and optical characteristics were measured by Hall effect measurement and UV/Vis spectrometer examinations, respectively. To analyze structural properties and surface smoothness of the IZTO and IAZO films, XRD and SEM examinations were performed, respectively. It was shown that IZTO and IAZO films exhibited microcrystalline structure over $400^{\circ}C$ and amorphous structural regardless of RTA temperature, respectively.

• Korean Journal of Materials Research
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• v.21 no.12
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• pp.703-707
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• 2011

The electrochromic properties of tungsten oxide films grown by RF sputtering were investigated. Among the sputter parameters, first the $Ar:O_2$ ratios were controlled with division into only an $O_2$ environment, 1:1 and 4:1. The structure of each film prepared by these conditions was studied by X-ray diffraction, X-ray photoelectron spectroscopy and Rutherford backscattering spectroscopy. The sputter-deposited tungsten oxide films had an amorphous structure regardless of the $Ar:O_2$ ratios. The chemical compositions, however, were different from each other. The stoichiometric structure and low-density film was obtained at higher $O_2$ contents. Electrochemical tests were performed by cyclic voltammetry and chronoamperometry at 0.05 M $H_2SO_4$ solutions. The current density and charge ratio was estimated during the continuous potential and pulse potential cycling at -0.5 V and 1.8 V, respectively. The film grown in a higher oxygen environment had a higher current density and a reversible charge reaction during intercalation and deintercalation. The in-situ transmittance tests were performed by He-Ne laser (633 nm). At higher oxygen contents, a big transmittance difference was observed but the response speed was too slow. This was likely caused by higher film resistivity. Furthermore, the effect of sputtering pressure was also investigated. The structure and surface morphology of each film was observed by X-ray diffraction and scanning electron microscopy. A rough surface was observed at higher sputtering pressure, and this affected the higher transmittance difference and coloration efficiency.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.207.2-207.2
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• 2014

ZnO는 큰 액시톤 결합에너지(60 meV)와 넓은 밴드갭(3.36 eV)을 가지고 있어 광소자 분야에서 다양하게 연구 되어지고 있다. 또한 높은 광 투과도로 인해 여러 투명 제품 분야에도 적용되어지고 있다. 본 연구에서는 높은 가시광 투과도와 함께 근적외선 차폐를 위한 스마트 필름 제작을 위해 RF sputter를 이용하여 상온에서 ZnO 나노박막을 제작하여 광학적인 특성들을 분석하였다. 실험은 Glass 와 PET 위에 동시에 성장시켜 RF power 변화와 Ar, O2의 가스 분압비, Working Pressure의 변화를 변수로 두어 진행하였다. 측정은 Ellipsometry를 이용하여 광학적인 두께와 굴절률을 조사하였고 UV visible spectrometer를 통해 광학적인 투과도를 확인하였다.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1572-1573
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• 2007

RF magnetron 스퍼터에서 스퍼터링시 타겟 온도와 기판 온도가 증가함에 따라 chamber내부의 압력이 달라져 동일한 순도의 박막을 얻기가 힘들다. 본 연구에서는 gas량을 조절하는 MFC의 출력 전압을 PID 제어 시스템을 설계하여 기준전압(원하는 진공도에 해당하는 전압 값)과 진공게이지에서 출력되는 전압을 비교하여 MFC의 출력 전압을 증가 또는 감소시킴으로써 gas량을 일정하게 하여 chamber 내부의 압력이 일정하게 유지되도록 하였다.

• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.3
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• pp.15-19
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• 2003

In This paper, we developed 1.96 GHz air gap type FBAR BPF using ZnO as piezoelectric sputtered by RF magnetron at room temperature. FBAR BPF was fabricated by sputtering bottom electrode (Al), ZnO as piezoelectric and top electrode (Mo) on Si wafer one by one with RF magnetron sputter, then Si was dry etched to make an air hole. XRD test result of fabricated FBAR BPF showed that ZnO crystal was well pre-oriented as (002) and sigma value of XRC was 1.018. IL(Insertion loss) showed excellent result as 1 dB.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.466-467
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• 2005

Al doped zinc oxide films (ZnO:Al) were deposited on glass substrate by RF magnetron sputtering from a ZnO target mixed with 2 wt% $Al_2O_3$. The as-deposited ZnO:Al films were rapid-thermal annealed. Electrical properties and structural evolution of the films, as annealed by rapid thermal process (RTP), were studied and compared with the films annealed by conventional annealing process. RTP, the (002) peak intensity increases and the electrical resistivity decreases by 20%, after RT annealing. The effects of RT annealing on the structural evolution and electrical properties of RF sputtered films were further discussed and compared also with the films deposited by DC magnetron sputtering.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.201-201
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• 2010

본 연구에서는 RF magnetron co-sputtering을 이용하여 Zn-O-Ga 구성비에 따른 광투과도 및 전기적 특성을 연구하였다. 타겟으로 ZnO 및 $Ga_2O_3$ 소결체를 이용하였으며, 두 개의 RF magnetron sputter의 RF power를 동시에 조절하여 타겟의 구성비를 조절하였으며, 기판과 타겟의 거리를 25 mm~75 mm 범위 내에 조절하여 거리에 따른 Zn-O-Ga 박막의 광투과 특성 및 전기적 특성을 관찰하였다. $Ga_2O_3$ 소결체의 magnetron sputter의 RF power를 30 watt에서 100 watt로 증가함에 따라 박막내의 Ga 성분은 0.5%에서 7.4%로 증가하였으며 Zn 성분은 46.3%에서 40.9%로 O성분은 53.2%에서 51.6%로 각각 줄어들었다. 이에 따라 ZnO의 우선방위 (002) 결정각($2{\theta}$)은 34.24에서 33.87로 줄어들었으며, 이동도 $5.5\;cm^2/Vs$ 에서 $1.99\;cm^2/Vs$ 정도로 감소하는 경향을 보였다. 광투과도는 가시광선 영역에서 85% 이상 보였으며, carrier 밀도는 $0.5\;{\sim}\;4.0^*10^{20}/cm^3$로 증가함에 따라 이동도는 $1.5{\sim}5.5\;cm^2/Vs$로 투명전도막의 특성을 보였다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2006.04a
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• pp.87-88
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• 2006

• 한국전기화학회:학술대회논문집
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• 2002.04a
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• pp.39-39
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• 2002