• 한국표면공학회지
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• 제26권2호
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• pp.71-81
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• 1993

Thed effects of Ar or Oxygen RF plasma treatment on the adhesion behavior of Cr films to polyimide sub-strates have been investigated by using SEM, XRD, AES, and $90^{\circ}$peel test. By applying RF plasma treatment of the polyimide surface prior to metal deposition, the peel adhesion strength of Cu/Cr films sputtered onto the fully cured BPDA-PDA polyimide was highly increased from about 3g/mm to 90 ~ 100g/mm. Improved peel adhesion strength of Cr/polyimide interfaces due to RF plasma treatment was attributed to the contributions from surface cleaning, Cr-polyimide bonding at the interface, and force required for plastic deformation of the film. While the surface topology change of the polyimide caused by RF plasma treatment makes a little contri-bution to the improved adhesion.

• Nuclear Engineering and Technology
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• 제38권8호
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• pp.779-784
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• 2006

The design, manufacturing process, and first operating test of a high power RF source for a proton accelerator are described. A klystron amplifier system has been developed for operation at 700 MHz, 1 MW and is composed of a triode type electron gun, six cavities, an RF output window, a beam collector, and an electromagnet. The prototype klystron was constructed and tested at a reduced duty to produce the designed output RF power.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.136.1-136.1
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• 2015

In the present study, UHF (320 MHz) in combination with RF (13.56 MHz) plasmas was used for the synthesis of hydrogenated silicon nitride (SiNx:H) films by PECVD process at low temperature. RF/UHF hybrid plasmas were maintained at a fixed pressure of 410 mTorr in the N2/SiH4 and N2/SiH4/NH3 atmospheres. To investigate the radical generation and plasma formation and their control for the growth of the film, plasma diagnostic tools like vacuum ultraviolet absorption spectroscopy (VUVAS), optical emission spectroscopy (OES), and RF compensated Langmuir probe (LP) were utilized. Utilization of RF/UHF hybrid plasmas enables very high plasma densities ~ 1011 cm-3 with low electron temperature. Measurements using VUVAS reveal the UHF source is quite effective in the dissociation of the N2 gas to generate more active atomic N. It results in the enhancement of the Si-N bond concentration in the film. Consequently, the deposition rate has been significantly improved up to 2nm/s for the high rate synthesis of highly transparent (up to 90 %) SiNx:H film. The films properties such as optical transmittance and chemical composition are investigated using different analysis tools.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2007년도 춘계학술대회
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• pp.309-312
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• 2007

Sputter deposition followed by surface treatment was studied using reactive RF plasma as a method for preparing titanium oxide($TiO_{2}$) films on indium tin oxide(ITO) coated glass substrate for dye-sensitized solar cells(DSSCs). Anatase structure $TiO_{2}$ films deposited by reactive RF magnetron sputtering under the conditions of $Ar/O_{2}$(5%) mixtures, RF power of 600W and substrate temperature of $400^{\circ}C$ were surface-treated by inductive coupled plasma(ICP) with $Ar/O_{2}$ mixtures at substrate temperature of $400^{\circ}C$, and thus the films were applied to the DSSCs, The $TiO_{2}$ Films made on these exhibited the BET specific surface area of 95, the pore volume of $0.3cm^{2}$ and the TEM particle size of ${\sim}25$ nm. The DSSCs made of this $TiO_{2}$ material exhibited an energy conversion efficiency of about 2.25% at $100mW/cm^{2}$ light intensity.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.241.1-241.1
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• 2014

The large-area high-power radio-frequency (RF) driven ion sources based on the negative hydrogen (deuterium) ion beam extraction are the major components of neutral beam injection (NBI) systems in future large-scale fusion devices such as an ITER and DEMO. Positive hydrogen (deuterium) RF ion sources were the major components of the second NBI system on ASDEX-U tokamak. A test large-area high-power RF ion source (LAHP-RaFIS) has been developed for steady-state operation at the Korea Atomic Energy Research Institute (KAERI) to extract the positive ions, which can be used for the NBI heating and current drive systems in the present fusion devices, and to extract the negative ions for negative ion-based plasma heating and for future fusion devices such as a Fusion Neutron Source and Korea-DEMO. The test RF ion source consists of a driver region, including a helical antenna and a discharge chamber, and an expansion region. RF power can be transferred at up to 10 kW with a fixed frequency of 2 MHz through an optimized RF matching system. An actively water-cooled Faraday shield is located inside the driver region of the ion source for the stable and steady-state operations of RF discharge. The characteristics and uniformities of the plasma parameter in the RF ion source were measured at the lowest area of the expansion bucket using two RF-compensated electrostatic probes along the direction of the short- and long-dimensions of the expansion region. The plasma parameters in the expansion region were characterized by the variation of loaded RF power (voltage) and filling gas pressure.

• 한국진공학회지
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• 제8권1호
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• pp.75-82
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• 1999

내부 삽입형 유도결합 플라즈마를 이온화원으로 하는 I-PVD장치를 이용하여 박막을 형성하는데 중요한 요소의 하나가 이온의 입사에너지이며, 이는 플라즈마 전위와 기판 전위의 차이에 의해서 결정된다. 이를 감소시킬 목적으로 안테나 여기 주파수를 4MHz의 중간주파수에서, 안테나의 정합 회로를 변형형, 부동형의 2가지로 변화시키고, 부동형에서는 바이어스 저항의 값을 가변시켰다. 그 결과 Ar 플라즈마에서 4MHz RF 전력 600 W에서 5 mTorr에서 30 mTorr의 넓은 압력 범위에서 5V 미만의 낮은 평균 플라즈마 전위와 60V의 안테나 전압을 얻었다. 또한 출력측에 설치한 RLC회로의 조절을 통해서 RF전력 500 W에서 RF 입력 및 출력단의 Rf 안테나 유기 전압을 50V의 아주 낮은 값으로 유지시킬 수 있었다. 이때의 안테나 및 플라즈마의 총 임피던스는 약 10$\Omega$이었으며, 리액턴스를 0.05$\Omega$수준으로 유지하였을 때 가장 낮은 전압을 얻었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 하계학술대회 논문집 C
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• pp.1695-1697
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• 2003

In this paper the emission properties of electrodeless fluorescent lamp were discussed using the inductively coupled plasma. To transmit the electromagnetic energy into the chamber a RF power of 13.56MHz was appied to the antenna and considering the Ar gas pressure and the RF electric power change, the emission spectrum, Ar-I line, luminance were investigated. At this time the input parameter for ICP RF plasma, Ar gas pressure and RF power were applied in the range of 10${\sim}$60m Torr, 10${\sim}$300W respectively.

• 센서학회지
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• 제31권4호
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• pp.214-217
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• 2022

The effect of inductively coupled plasma (ICP) treatment with O₂ gas on the surface properties of poly(ether sulfone) (PES) was investigated. X-ray photoelectron spectroscopy (XPS) was used to analyze the chemical characteristics of the O₂ plasma-treated PES films. The surface roughness of the pristine and O₂ plasma-treated PES films for different RF powers of the ICP was determined using an atomic force microscope (AFM). The contact angles of the PES films were also measured, using which the surface free energies were calculated. The O1s XPS spectra of the PES films revealed that the number of polar functional groups increased following the O₂ plasma treatment. The AFM analysis showed the average surface roughness increased from 1.01 to 4.48 nm as the RF power of the ICP was increased. The contact angle measurements revealed that the PES films became more hydrophilic as the RF power of the ICP was increased. The total surface energy increased with the RF power of the ICP, resulting from the increased polar energy component.

• 한국진공학회지
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• 제18권2호
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• pp.102-107
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• 2009

본 연구에서는 ZnO 박막을 성장하기 위한 plasma-assisted molecular beam epitaxy (PAMBE)에 장착된 플라즈마건에 13.56 MHz의 rf 전력을 인가하였을 때 발생되는 산소 플라즈마의 발광 스펙트럼을 광발광 분광기(optical emission spectroscopy: OES)를 이용하여 조사하였다. 실험은 산소 가스 유량을 1 sccm에서 20 sccm, rf 전력을 25W에서 250 W 범위에서 플라즈마건의 오리피스의 직경을 각각 3 mm 와 5 mm로 달리하여 행해졌다. 산소 플라즈마를 발생시켰을 때 오리피스의 직경에 상관없이 전형적인 산소 플라즈마의 발광 스펙트럼이 관측되었다. 특히 776.8 nm와 843.9 nm에서 $3p^{5}P-3s^{5}S^{0}$, $3p^{3}P-3s^{3}S^{0}$ 천이에 기인하는 강한 산소 원자 발광선이 관측되었다. 산소 유량과 rf 파워가 증가함에 따라 776.8 nm와 843.9 nm의 발광 세기는 증가하였고, 776.8 nm의 스펙트럼 발광 세기의 증가율이 843.9 nm의 스펙트럼 발광 세기 증가율보다 컸다. 또한 오리피스 직경이 3 mm일 때가 5 mm일 때보다 산소 플라즈마가 더 안정적으로 발생하였다.

• 한국세라믹학회지
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• 제49권6호
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• pp.523-527
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• 2012

Silicon carbide (SiC) has recently drawn an enormous amount of industrial interest due to its useful mechanical properties, such as its thermal resistance, abrasion resistance and thermal conductivity at high temperatures. In this study, RF thermal plasma (PL-35 Induction Plasma, Tekna CO., Canada) was utilized for the synthesis of high-purity SiC powder from an organic precursor (hexamethyldisilazane, vinyltrimethoxysilane). It was found that the SiC powders obtained by the RF thermal plasma treatment included free carbon and amorphous silica ($SiO_2$). The SiC powders were further purified by a thermal treatment and a HF treatment, resulting in high-purity SiC nano-powder. The particle diameter of the synthesized SiC powder was less than 30 nm. Detailed properties of the microstructure, phase composition, and free carbon content were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), a thermogravimetric (TG) analysis, according to the and Brunauer-Emmett-Teller (BET) specific surface area from N2 isotherms at 77 K.