• 제어로봇시스템학회:학술대회논문집
• /
• 2001.10a
• /
• pp.31.2-31
• /
• 2001

A real-time control strategy is presented for plasma control Rather than in-situ plasma variables, this is based on realtime measurements of two electrical positions that correspond to two match motors. Using the rf match monitor system, the positions were collected. The process of impedance matching was identified with variations in process factors, including rf power, pressure, and O$_2$ flow rate. A state-space model was obtained basing on autoregressive moving average model. For this model, a linear quadratic regulator was designed and applied. Simulation results revealed that match positions could accurately be regulated to follow certain positions arbitrarily chosen.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.07a
• /
• pp.863-865
• /
• 2001

In this study, RuO$_2$thin films were etched in inductively coupled $O_2$plasma. Etching characteristics of RuO$_2$thin films including etch rate and selectivity were evaluated as a function of rf power in $O_2$plasma and gas mixing ratio in $O_2$/Ar plasma. In $O_2$ plasma, the etch rate of RuO$_2$thin film increases as rf power increases. In $O_2$/Ar plasma, the etch rate of RuO$_2$thin film increases up to 10% Ar, but decrease with furthermore increasing Ar mixing ratio. The enhanced etch rate can be obtained with increasing rf power and small addition of Ar gas.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.57 no.5
• /
• pp.816-820
• /
• 2008

The RF inductive discharge of inductively couples plasma (ICP) continues to attract growing attention as an effective plasma source in many industrial applications, the best known of which are plasma processing and lighting technology. Although most practical ICPs operate at 13.56 [MHz] and 2.65 [MHz], the trend to reduce the operating frequency is clearly recognizable from recent ICP developments. In an electrodeless fluorescent lamp, the use of a lower operating frequency simplifies and reduces cost of RF matching systems and RF generators and can eliminate capacitive coupling between the inductor coil and plasma, which could be a strong factor in wall erosion and plasma contamination. In this study, We discussed simulation and experimental results when changing ferrite position in antenna.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.53 no.11
• /
• pp.566-571
• /
• 2004

Pulse modulation technique provide additional controling method for electron temperature and density in rf and microwave processing plasma. Transient characteristics of electron density and temperature have been measured in pulse modulated rf inductively coupled argon plasma using simple probe circuit. Electron temperature relaxation is clearly identified in the after glow stage. Controllability of average electron temperature and density depends on the modulation frequency and duty ratio. Numerical calculation of time-dependent electron density and temperature have been performed based on the global model. It has been shown that simple langmuir probe measurement method used for continuous plasma is also applicable to time-dependent measurement of pulse modulated plasma.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.53 no.2
• /
• pp.79-82
• /
• 2004

The RF inductive discharge or inductively coupled plasma (ICP) continues to attract growing attention as an effective plasma source in many industrial applications, the best known of which are plasma processing and lighting technicology. Although most practical ICP operate at 13.56 [MHz]and 2.65 [MHz], the trend to reduce the operating frequency is clearly recognizable from recent ICP developments. In an electrodeless fluorescent lamp, the use of a lower operating frequency simplifies and reduces cost of rf matching systems and rf generators and can eliminate capacitive coupling between the inductor coil and plasma, which could be a strong factor in wall erosion and plasma contamination. In this study, the configuration of ferrite and fixture which operates at the frequency of 2.65[MHz]was discussed as functions of the ferrite thickness and distance by using the electromagnetic simulation software (Maxwell 2D).

• Proceedings of the Korean Society of Propulsion Engineers Conference
• /
• 2010.11a
• /
• pp.784-785
• /
• 2010

The high enthalpy plasma research center in Chonbuk national university is under construction for MW class plasma wind tunnel. Four types of plasma equipment will be installed in the research center. The equipments are 1set of 0.4 MW class enhanced Huels type plasma equipment, 1 set of 2.4 MW class enhanced Huels type plasma quipment, 1 set of 60 kW RF plasma equipment and 1 set of 200 kW RF plasma equipment. And electrical, water and gas utilities to assistant plasma equipments are under construction.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.53 no.3
• /
• pp.133-136
• /
• 2004

Low-Pressure inductively coupled RF discharge sources have important industrial applications mainly because they can provide a high-density electrodeless plasma source with low ion energy and low power loss. In an inductive discharge, the RF power is coupled to the plasma by an electromagnetic interaction with the current flowing in a coil. In this paper, the experiments have been focussed on the electric characteristic and carried out using a single Langmuir probe. The internal electric characteristics of inductively coupled Ar RF discharge at 13.56(MHz) have been measured over a wide range of power at gas pressure ranging from 1∼70(mTorr).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.12a
• /
• pp.43-47
• /
• 2006

In this paper, parameters of electron temperature and density for the mercury-free lighting-source were measured to diagnosis and analyze in Xe based inductively coupled plasma (ICP). As results at several dependences of 20~100mTorr Xenon pressure, the brightness of discharge tube was higher (4,900 $cd/m^2$) than other conditions when Xe pressure was 20mTorr and RF power was 200W. In that case, the electron temperature and density were 3.58eV and $3.56{\times}10^{12}cm^2$, respectively. The key parameters of Xe based ICP depended on Xe pressure more than RF power that could be verified. A high electron temperature and low electron density with a suitable Xe pressure are indispensible parameters for Xe based ICP lighting-source.

• Proceedings of the KIEE Conference
• /
• 2004.11a
• /
• pp.147-149
• /
• 2004

Inductively coupled plasma is commonly used for electrodeless lamp due to its ease of plasma generation. Optical characteristics significantly depend on the RF power and gas pressure of the plasma. This paper describes the measurement of spectrum as a function of RF power and gas pressure with a goal of finding optimal operating conditions of the electrodeless lamp. The gas pressure was varied from 10 [mTorr] to 100 [mTorr] and the RF power was varied from 10 [W] to 120 [W]. It was found that the intensity of wavelength tends to be decreased when argon pressure is increased, and the intensity of wavelength is increased as RF power is increased.

• Korean Journal of Materials Research
• /
• v.7 no.1
• /
• pp.27-32
• /
• 1997

본 연구에서는 고밀도 플라즈마를 형성하는 planar magnetron RF 플라즈마 CVD를 이용하여 DLC(diamond-like carbon) 박막을 합성하였다. 이 방법을 이용하여 DLC 박막을 합성한다면 고밀도 플라즈마 때문에 종래의 플라즈마 CVD(RF-PECVD)법보다 증착속도가 더욱더 향상될 것이라는 것에 착안하였다. 이를 위해 magnetron에 의한 고밀도 플라즈마가 존재할 때도 역시 DLC박막형성에 미치는 RF 전력과 반응가스 압력이 중요한 반응변수인가에 대해 조사하였고, 일정한 자기장의 세기에서 RF전력과 DC self-bias 전압과의 관계를 조사하였다. 또한 RF전력변화에 따른 박막의 증착속도와 밀도를 측정하였다. 본 연구에 의해 얻어진 박막의 증착속도는 magnetron에 의한 이온화율이 매우 높아 기존의 RF-PECVD 법보다 매우 빠르며, DLC박막의 구조와 물질특성을 알아보기 위해 FTIR(fourier transform infrared)및 Raman 분광분석을 행한 결과 전형적인 양질의 고경질 다이아몬드상 탄소박막임을 알 수 있었다.