• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.168-168
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• 2008

Dimension of a transistor has rapidly shrunk to increase the speed of device and to reduce the power consumption. However, it is accompanied with several problems like direct tunneling through the gate dioxide layer and low conductivity characteristic of poly-Si gate in nano-region. To cover these faults, study of new materials is urgently needed. Recently, high dielectric materials like $Al_2O_3$, $ZrO_2$, and $HfO_2$ are being studied for equivalent oxide thickness (EOT). However, poly-Si gate is not compatible with high-k materials for gate-insulator. Poly Si gate with high-k material has some problems such as gate depletion and dopant penetration problems. Therefore, new gate structure or materials that are compatible with high-k materials are also needed. TiN for metal/high-k gate stack is conductive enough to allow a good electrical connection and compatible with high-k materials. According to this trend, the study on dry etching of TiN for metal/high-k gate stack is needed. In this study, the investigations of the TiN etching characteristics were carried out using the inductively coupled $BCl_3$-based plasma system and adding $Cl_2$ gas. Dry etching of the TiN was studied by varying the etching parameters including $BCl_3$/Ar gas mixing ratio, RF power, DC-bias voltage to substrate, and $Cl_2$ gas addition. The plasmas were characterized by optical emission spectroscopy analysis. Scanning electron microscopy was used to investigate the etching profile.

• 한국전기전자재료학회논문지
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• 제26권11호
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• pp.826-830
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• 2013

In this paper, we carried out the investigations of both etch characteristics and mechanisms for the $SnO_2$ thin films in $O_2/BCl_3/Ar$ plasma. The dry etching characteristics of the $SnO_2$ thin films was studied by varying the $O_2/BCl_3/Ar$ gas mixing ratio. We determined the optimized process conditions that were as follows: a RF power of 700 W, a DC-bias voltage of - 150 V, and a process pressure of 2 Pa. The maximum etch rate was 509.9 nm/min in $O_2/BCl_3/Ar$=(3:4:16 sccm) plasma. From XPS analysis, the etch mechanism of the $SnO_2$ thin films in the $O_2/BCl_3/Ar$ plasma can be identified as the ion-assisted chemical reaction while the role of ion bombardment includes the destruction of the metal-oxide bonds as well as the cleaning of the etched surface form the reaction products.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.41-43
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• 1999

Among the feffoelectric thin films that have been widely investigated for ferroelectric random access memory (FRAM) applications, SrBi$_2$Ta$_2$$O_{9}$ thin film is appropriate to memory capacitor materials for its excellent fatigue endurance. However, very few studies on etch properties of SBT thin film have been reported although dry etching is an area that demands a great deal of attention in the very large scale integrations. In this study, the a SrBi$_2$Ta$_2$$O_{9}$ thin films were etched by using magnetically enhanced inductively coupled Ar/CHF$_3$ plasma. Etch properties, such as etch rate, selectivity, and etched profile, were measured according to gas mixing ratio of CHF$_3$(Ar$_{7}$+CHF$_3$) and the other process conditions were fixed at RF power of 600 W, dc bias voltage of 150 V, chamber pressure of 10 mTorr. Maximum etch rate of SBT thin films was 1750 A77in, under CHF$_3$(Ar+CHF$_3$) of 0.1. The selectivities of SBT to Pt and PR were 1.35 and 0.94 respectively. The chemical reaction of etched surface were investigated by X-ray photoelectron spectroscopy (XPS) analysis. The Sr and Ta atoms of SBT film react with fluorine and then Sr-F and Ta-F were removed by the physical sputtering of Ar ion. The surface of etched SBT film with CHF$_3$(Ar+CHF$_3$) of 0.1 was analyzed by secondary ion mass spectrometer (SIMS). Scanning electron microscopy (SEM) was used for examination of etched profile of SBT film under CHF$_3$(Ar+CHF$_3$) of 0.1 was about 85˚.85˚.˚.

• 한국전기전자재료학회논문지
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• 제16권5호
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• pp.378-384
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• 2003

Etching species in CF$_4$/Ar plasma and the behavior of etching rate of Bi$_4$-$_{x}$L$_{x}$rTi$_3$O$_2$ (BLT) films were investigated in inductively coupled plasma (ICP) reactor in terms of etch parameters. The etching rate as functions of CF$_4$ contents showed the maximum 803 $\AA$/min at 20% CF$_4$ addition in CF$_4$/Ar plasma. The increase of RF power and DC bias voltage caused to an increase of etch rate. The variation of relative volume densities for F and he atoms were measured with the optical emission spectroscopy (OES). The chemical states of BLT were investigated with using X-ray photoelectron spectroscopy (XPS). XPS narrow scan analysis shows that La-fluorides remained on the etched surface. The presence of maximum etch rate at CF$_4$(20%)/Ar(80%) may be explained by the concurrence of two etching mechanisms such as physical sputtering and chemical reaction. The roles of he ion bombardment include destruction of metal (Bi, La, Ti)-O bonds as well as assistant for chemical reaction of metals with fluorine atoms.oms.

• 한국인터넷방송통신학회논문지
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• 제22권4호
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• pp.67-72
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• 2022

본 논문에서는 60 nm GaN/Si HEMT 공정을 사용하여 전력증폭기(Power Amplifier)의 설계를 제시하였다. 고주파 설계를 위하여 맞춤형 트랜지스터 모델을 구성하였다. Output stage는 저손실 설계를 위해 마이크로스트립 라인을 사용하여 회로를 구성하였다. 또한 RC 네트워크로 구성된 Bias Feeding Line과 Input bypass 회로의 AC Ground(ACGND) 회로를 각각 적용하여 DC 소스에 연결된 노드의 최소임피던스가 RF회로에 영향을 미치지 않도록 하였다. 이득과 출력을 고려하여 3단의 구조로 설계되었다. 설계된 전력증폭기의 최종 사이즈는 3900 ㎛ × 2300 ㎛ 이다. 중심 주파수에서 설계된 결과는 12 V의 공급 전압에서 15.9 dB의 소 신호 이득, 29.9 dBm의 포화 출력(Psat), 24.2 %의 PAE를 달성하였다.

• 대한전자공학회논문지SD
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• 제38권12호
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• pp.8-13
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• 2001

$CeO_2$ 박막은 강유전체 메모리 디바이스 응용을 위한 금속-강유전체-절연체-실리콘 전계효과 트랜지스터 구조에서의 강유전체 박막과 실리콘 기판 사이의 완충층으로서 제안되어지고 있다. 본 논문에서는 $CeO_2$ 박막을 유도 결합 플라즈마를 이용하여 $Cl_2$/Ar 가스 혼합비에 따라 식각하였다. 식각 특성을 알아보기 위한 실험조건으로는 RF 전력 600 W, dc 바이어스 전압 -200 V, 반응로 압력 15 mTorr로 고정하였고 $Cl_2$($Cl_2$+Ar) 가스 혼합비를 변화시키면서 실험하였다. $Cl_2$/($Cl_2$+Ar) 가스 혼합비가 0.2일때 $CeO_2$ 박막의 식각속도는 230 ${\AA}$/min으로 가장 높았으며 또한 $YMnO_3$에 대한 $CeO_2$의 선택비는 1.83이였다. 식각된 $CeO_2$ 박막의 표면반응은 XPS와 SIMS를 통해서 분석하였다. XPS 분석 결과 $CeO_2$ 박막의 표면에 Ce와 Cl의 화학적 반응에 의해 CeCl 결합이 존재함을 확인하였고, 또한 SIMS 분석 결과로 CeCl 결합을 확인하였다. $CeO_2$ 박막의 식각은 Cl 라디칼의 화학적 반응의 도움을 받으며 Ce 원자는 Cl과 반응을 하여 CeCl과 같은 혼합물로 $CeO_2$ 박막 표면에 존재하며 이들 CeCl 혼합물은 Ar 이온들의 충격에 의해 물리적으로 식각 되어진다.

• 한국전자파학회논문지
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• 제24권3호
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• pp.219-232
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• 2013

본 논문에서는 손과 같은 물체가 안테나에 접근하였을 때 이탈된 공진 주파수와 임피던스를 자동으로 복원하여 무선기기의 송수신 성능을 항상 최적의 상태로 유지하도록 할 수 있는 UHF 특정 소출력 무선주파수 대역(425 MHz)의 소형 마이크로스트립 안테나를 설계, 제작하였다. 반파장 마이크로스트립 방사체의 양쪽 끝단을 접지면 쪽으로 폴딩하여 소형화하고, 역시 방사체와 접지면 사이에 바랙터 다이오드에 의한 캐패시턴스를 장하한 다음, 각각 역바이어스 전압 조절에 의한 용량을 비대칭적으로 변화시킴으로써, -30 dB 이하의 일률적인 반사 손실을 유지하면서 395 MHz에서 455 MHz까지 연속적인 공진 주파수 조절이 가능한 전압 제어 안테나를 설계하였다. RF 모듈로부터 시험 신호를 안테나에 송출하여, 부정합에 의해 안테나로부터 되돌아 온 반사 신호 레벨을 RSS(Receive Signal Strength) 검출 회로와 오프셋 증폭기를 통하여 마이크로콘트롤러에 입력하고, 그 레벨이 최소가 되도록 안테나의 바이어스 전압을 자동 조절하는 펌웨어를 설계, 시스템을 완성하여 시험한 결과, 손, 금속판, 유전체 등의 물체를 접근시켰을 때 틀어졌던 안테나의 특성이 수 초 이내에 완전하게 복원됨을 확인하였다.

• 한국전자파학회논문지
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• 제22권8호
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• pp.805-808
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• 2011

본 논문에서는 220 V의 AC 전원을 공급받아 13.56 MHz의 RF 신호를 출력하는 고효율, 고출력 Class E 전력송신기를 설계하였다. 송신기는 AC-DC 변환기와 class E 전력 증폭기로 구성된다. 설계된 AC-DC 변환기는 220V/60 Hz의 가정용 전원을 공급 받아서 약 290 V의 DC 전압을 출력한다. 이때, AC-DC 변환기는 98.03 %의 매우 높은 변환 효율을 가진다. 변환 효율을 최대로 하기 위하여 별도의 DC-DC 변환기를 사용하지 않고, AC-DC 변환기의 출력 전압을 주 전력 증폭기의 드레인 바이어스 전압으로 사용하였다. 또한, class E 전력 증폭기의 전력손실을 최소화하기 위해 high-Q 인덕터를 제작하였다. 측정 결과, 13.56 MHz에서 동작하는 class E 전력 증폭기는 최대 출력 전력 323.6 Watt에서 84.2 %의 PAE(Power-Added Efficiency)를 가진다. AC-DC 변환기를 포함한 class E 전력 송신기는 323.6 Watt에서 82.87 %의 매우 높은 효율 특성을 나타낸다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.220-220
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• 2013

Surface-normal transmission electro-absorption modulator (EAM) are attractive for high-definition (HD) three-dimensional (3D) imaging application due to its features such as small system volume and simple epitaxial structure [1,2]. However, EAM in order to be used for HD 3D imaging system requires uniform modulation performance over large area. To achieve highly uniform modulation performance of EAM at the operating wavelength of 850 nm, it is extremely important to remove the GaAs substrate over large area since GaAs material has high absorption coefficient below 870 nm which corresponds to band-edge energy of GaAs (1.424 eV). In this study, we propose and experimentally demonstrate a transmission EAM in which highly selective backside etching methods which include lapping, dry etching and wet etching is carried out to remove the GaAs substrate for achieving highly uniform modulation performance. First, lapping process on GaAs substrate was carried out for different lapping speeds (5 rpm, 7 rpm, 10 rpm) and the thickness was measured over different areas of surface. For a lapping speed of 5 rpm, a highly uniform surface over a large area ($2{\times}1\;mm^2$) was obtained. Second, optimization of inductive coupled plasma-reactive ion etching (ICP-RIE) was carried out to achieve anisotropy and high etch rate. The dry etching carried out using a gas mixture of SiCl4 and Ar, each having a flow rate of 10 sccm and 40 sccm, respectively with an RF power of 50 W, ICP power of 400 W and chamber pressure of 2 mTorr was the optimum etching condition. Last, the rest of GaAs substrate was successfully removed by highly selective backside wet etching with pH adjusted solution of citric acid and hydrogen peroxide. Citric acid/hydrogen peroxide etching solution having a volume ratio of 5:1 was the best etching condition which provides not only high selectivity of 235:1 between GaAs and AlAs but also good etching profile [3]. The fabricated transmission EAM array have an amplitude modulation of more than 50% at the bias voltage of -9 V and maintains high uniformity of >90% over large area ($2{\times}1\;mm^2$). These results show that the fabricated transmission EAM with substrate removed is an excellent candidate to be used as an optical shutter for HD 3D imaging application.