• Title/Summary/Keyword: RF transmission

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Si(100)기판 위에 증착된$CeO_2$(200)박막과 $CeO_2$(111) 박막의 전기적 특성 비교

  • 이헌정;김진모;김이준;정동근
    • Proceedings of the Korean Vacuum Society Conference
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    • 2000.02a
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    • pp.67-67
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    • 2000
  • CeO2는 cubic 구조의 일종인 CaR2 구조를 가지고 있으며 격자상수가 Si의 격장상수와 매우 비슷하여 Si 기판위에 에피텍셜하게 성장할 수 있는 가능성이 매우 크다. 따라서 SOI(silicon-on-insulator)구조의 실현을 위하여 Si 기판위에 CeO2 박막을 에피텍셜하게 성장시키려는 많은 노력이 있어왔다. 또한 metal-ferroelectric-semiconductor field effect transistor)에서 ferroelectric 박막과 Si 기판사이의 완충층으로 사용된다. 이러한 CeO2의 응용을 위해서는 Si 기판 위에 성장된 CeO2 박막의 방위성 및 CeO2/Si 구조의 전기적 특성을 알아보는 것이 매우 중요하다. 본 연구에서는 Si(100) 기판위에 CeO2(200)방향으로 성장하는 박막과 EcO2(111) 방향으로 성장하는 박막을 rf magnetron sputtering 방법으로 증착하여 각각의 구조적, 전기적 특성을 분석하였다. RCA 방법으로 세정한 P-type Si(100)기판위에 Ce target과 O2를 사용하여 CeO2(200) 및 CeO2(111)박막을 증착하였다. 증착후 RTA(rapid thermal annealing)방법으로 95$0^{\circ}C$, O2 분위기에서 5분간 열처리를 하였다 이렇게 제작된 CeO2 박막의 구조적 특성을 XRD(x-ray diffraction)방법으로 분석하였고, Al/CeO2/Si의 MIS(metal-insulator-semiconductor)구조를 제작하여 C-V (capacitance-voltage), I-V (current-voltage) 특성을 분석하였으며 TEM(transmission electron microscopy)으로 증착된 CeO2막과 Si 기판과의 계면 특성을 연구하였다. C-V특성에 있어서 CeO2(111)/Si은 CeO2(111)의 두께가 증가함에 따라 hysteresis windows가 증가한 방면 CeO2(200)/Si은 hysteresis windows가 아주 작을뿐만 아니라 CeO2(200)의 두께가 증가하더라도 hysteresis windos가 증가하지 않았다. CeO2(111)/Si과 CeO2(200)/Si의 C-V 특성의 차이는 CeO2(111)과 CeO2(200)이 Si 기판에 의해 받은 stress의 차이와 이에 따른 defect형성의 차이에 의한 것으로 사료된다.

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$Si_3N_4$를 이용한 금속-유전체-금속 구조 커패시터의 유전 특성 및 미세구조 연구

  • 서동우;이승윤;강진영
    • Proceedings of the Korean Vacuum Society Conference
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    • 2000.02a
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    • pp.75-75
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    • 2000
  • 플라즈마 화학증착법(Plasma Enhanced Chemical Vapor Deposition, PECVD)을 이용하여 양질의 Si3N4 금속-유전막-금속(Metal-Insulator-Metal, MIM) 커페시터를 구현하였다. Fig.1에 나타낸 바와 같이 p형 실리콘 웨이퍼의 열 산화막 위에 1%의 실리콘을 함유하는 알루미늄을 스퍼터링으로 증착하여 전극을 형성하고 두 전극사이에 Si3N4 박막을 증착하여 MIM구조의 박막 커패시터를 제조하였다. Si3N4 유전막은 150Watt의 RF 출력하에서 반응 가스 N2/SiH4/NH3를 각각 300/10/80 sccm로 흘려주어 전체 압력을 1Torr로 유지하면서 40$0^{\circ}C$에서 플라즈마 화학증착법을 이용하여 증착하였으며, Al과 Si3N4 층의 계면에는 Ti과 TiN을 스퍼터링으로 증착하여 확산 장벽으로 이용하였다. 각 시편의 커패시턴스 및 바이어스 전압에 따른 누설 전류의 변화는 LCR 미터를 이용하여 측정하였고 각 시편의 커패시턴스 및 바이어스 전압에 따른 누설 전류의 변화는 LCR 미터를 이용하여 측정하였고 각 시편의 유전 특성의 차이점을 미세구조 측면에서 이해하기 이해 극판과 유전막의 단면 미세구조를 투과전자현미경(Transmission Electron Microscope, TEM)을 이용하여 분석하였다. 유전체인 Si3N4 와 전극인 Al의 계면반응을 억제시키기 위해 TiN을 확산 장벽으로 사용한 결과 MIM커패시터의 전극과 유전체 사이의 계면에서는 어떠한 hillock이나 석출물도 관찰되지 않았다. Fig.2와 같은 커패시턴스의 전류-전압 특성분석으로부터 양질의 MIM커패시터 특성을 f보이는 Si3N4 의 최소 두께는 500 이며, 그 두께 미만에서는 대부분의 커패시터가 전기적으로 단락되어 웨이퍼 수율이 낮아진다는 사실을 알 수 있었다. TEM을 이용한 단면 미세구조 관찰을 통해 Si3N4 층의 두께가 500 미만인 커패시터의 경우에 TiN과 Si3N4 의 계면에서 형성되는 슬릿형 공동(slit-like void)에 의해 커패시터의 유전특성이 파괴된다는 사실을 알게 되었으며, 이러한 슬릿형 공동은 제조 공정 중 재료에 따른 열팽창 계수와 탄성 계수 등의 차이에 의해 형성된 잔류응력 상태가 유전막을 기준으로 압축응력에서 인장 응력으로 바뀌는 분포에 기인하였다는 사실을 확인하였다.

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Enhanced Si based negative electrodes using RF/DC magnetron sputtering for bulk lithium ion batteries

  • Hwang, Chang-Muk;Park, Jong-Wan
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.277-277
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    • 2010
  • The capacity of the carbonaceous materials reached ca. $350\;mAhg^{-1}$ which is close to theorestical value of the carbon intercalation composition $LiC_6$, resulting in a relatively low volumetric Li capacity. Notwithstanding the capacities of carbon, it will not adjust well to the need so future devices. Silicon shows the highest gravimetric capacities (up to $4000\;mAhg^{-1}$ for $Li_{21}Si_5$). Although Si is the most promising of the next generation anodes, it undergoes a large volume change during lithium insertion and extraction. It results in pulverization of the Si and loss of electrical contact between the Si and the current collector during the lithiation and delithiation. Thus, its capacity fades rapidly during cycling. We focused on electrode materials in the multiphase form which were composed of two metal compounds to reduce the volume change in material design. A combination of electrochemically amorphous active material in an inert matrix (Si-M) has been investigated for use as negative electrode materials in lithium ion batteries. The matrix composited of Si-M alloys system that; active material (Si)-inactive material (M) with Li; M is a transition metal that does not alloy with Li with Li such as Ti, V or Mo. We fabricated and tested a broad range of Si-M compositions. The electrodes were sputter-deposited on rough Cu foil. Electrochemical, structural, and compositional characterization was performed using various techniques. The structure of Si-M alloys was investigated using X-ray Diffractometer (XRD) and transmission electron microscopy (TEM). Surface morphologies of the electrodes are observed using a field emission scanning electron microscopy (FESEM). The electrochemical properties of the electrodes are studied using the cycling test and electrochemical impedance spectroscopy (EIS). It is found that the capacity is strongly dependent on Si content and cycle retention is also changed according to M contents. It may be beneficial to find materials with high capacity, low irreversible capacity and that do not pulverize, and that combine Si-M to improve capacity retention.

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Evaluation of Electronic Pedal in Commercial Vehicles using Physiology Analysis of Electromyography (근전도 생리 분석을 이용한 상용차용 전자페달의 평가)

  • Kim, Jae-Jun;Kim, Kyung;Shin, Sun-Hye;Yu, Chang-Ho;Jeong, Gu-Young;Oh, Seung-Yong;Kwon, Tae-Kyu
    • Journal of the Korean Society for Precision Engineering
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    • v.28 no.12
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    • pp.1434-1440
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    • 2011
  • In this paper, we assessed muscular activities of lower limbs and foot pressure for car and bus drivers according to operating three electronic pedals that we developed. To analyze drivers' physical exhaustion, muscular fatigue of lower limbs was evaluated. Eleven car drivers and six urban bus drivers were participated in this experiment. The virtual driving system was used for the real driving environment. The virtual driving system was comprised of a spring seat, a steering wheel, pedals (clutch, excel and brake pedals), a manual transmission and a virtual driving simulation. For the real vibration like situation on the road, six degree of freedom motion base system was used. Measured muscles were rectus femoris (RF), biceps femoris (BF), tibialis anterior (TA) and gastrocnemius (Gn) muscles. For the quantitative muscular activities, integrated electromyography (IEMG) was analyzed. Muscular fatigues also were analyzed through the analysis of the median frequency. In addition, foot pressures were analyzed and compared through the peak and averaged pressure during the operating three developed electronic pedals. The experiments are conducted with total 17 drivers, 11 general public and 6 drivers. As a result of the analysis, electromyogram and fatigue analysis through intermediate frequency reduction for pedal-1 more efficient than other pedals. And foot pressure also was decreased. Consequently, we suggested the most efficient pedal and method to minimize the amount of cumulative fatigue.

Study on Electrical Conductivity, Transmittance and Gas Barrier Properties of DLC Thin Films (DLC 박막의 전기전도성, 투과율 및 가스베리어 특성에 관한 연구)

  • Park, S.B.;Kim, C.H.;Kim, T.G.
    • Journal of the Korean Society for Heat Treatment
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    • v.31 no.4
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    • pp.187-193
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    • 2018
  • In this study, the electrical conductivity, transmittance and gas barrier properties of diamond-like carbon (DLC) thin films were studied. DLC is an insulator, and has transmittance and oxygen gas barrier properties varying depending on the thickness of the thin film. Recently, many researchers have been trying to apply DLC properties to specific industrial conditions. The DLC thin films were deposited by PECVD (Plasma Enhanced Chemical Vapor Deposition) process. The doping gas was used for the DLC film to have electrical conductivity, and the optimum conditions of transmittance and gas barrier properties were established by adjusting the gas ratio and DLC thickness. In order to improve the electrical conductivity of the DLC thin film, $N_2$ doping gas was used for $CH_4$ or $C_2H_2$ gas. Then, a heat treatment process was performed for 30 minutes in a box furnace set at $200^{\circ}C$. The lowest sheet resistance value of the DLC film was found to be $18.11k{\Omega}/cm^2$. On the other hand, the maximum transmittance of the DLC film deposited on the PET substrate was 98.8%, and the minimum oxygen transmission rate (OTR) of the DLC film of $C_2H_2$ gas was 0.83.

Query Technique for Quick Network Routing changing of Mobility Sensor Node in Healthcare System (헬스케어 시스템에서 이동형 센서노드의 신속한 네트워크 라우팅 변화를 위한 질의기법)

  • Lee, Seung-chul;Kwon, Tae-Ha;Chung, Wan-Young
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2009.10a
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    • pp.517-520
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    • 2009
  • Healthcare application system has been actively researched to apply WSN technology to healthcare area with a mobile sensor node of low cost, low power, and small size. Sensor node has the problem for transmission range of RF power and time delay of the wireless routing connectivity between sensor nodes. In this paper, we proposes a new method utilizing mobile sensor nodes with relay sensor nodes for quick network routing changing using query technique in healthcare system. A query processor to control and manage the routing changing of sensor nodes in a wireless sensor network was designed and implemented. The user's PC transmits the beacon message which will change the quick link routing according to activity status of patient in wireless sensor network. We describe the implementation for query protocol that is very effective of power saving between sensor nodes.

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A Simulator for Analyzing the Accuracy of Correlative Interferometer Direction Finder (상관형 위상비교 방향탐지장치의 정확도 분석 시뮬레이터)

  • Lim, Joong-Soo;Kim, Young-Ho;Kim, Kichul
    • Journal of Convergence for Information Technology
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    • v.7 no.2
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    • pp.53-58
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    • 2017
  • This paper describes the design of a simulator for analyzing the accuracy of a correlative interferometer(CI) direction finder. CI direction finder is robust to noise, so it is often used in aircraft or ships where complex antenna installation is required, and the direction finding accuracy is very high. When the radio wave is incident at a specific azimuth angle, the phase difference calculated in a noiseless environment and the phase difference measured in a real environment with noise are fused to estimate the largest correlation coefficient as the azimuth angle of the radio wave. The simulator receives RF frequency, the number of antennas, the antenna coordinates, the transmission signal intensity, the bandwidth of the receiver, the gain and the payload effect, and calculates the direction finding accuracy of 0-360 degrees azimuth and 0-60 degree elevation with 0.5 degree. accuracy.

Development of High-Speed Real-Time Signal Processing Unit for Small Radio Frequency Tracking Radar Using TMS320C6678 (TMS320C6678을 적용한 소형 Radio Frequency 추적레이다용 고속 실시간 신호처리기 설계)

  • Kim, Hong-Rak;Hyun, Hyo-Young;Kim, Younjin;Woo, Seonkeol;Kim, Gwanghee
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.21 no.5
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    • pp.11-18
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    • 2021
  • The small radio frequency tracking radar is a tracking system with a radio frequency sensor that identifies a target through all-weather radio frequency signal processing for a target and searches, detects and tracks the target for the major target. In this paper, we describe the development of a board equipped with TMS320C6678 and XILINX FPGA (Field Programmable Gate Array), a high-speed multi-core DSP that acquires target information through all-weather radio frequency and identifies a target through real-time signal processing. We propose DSP-FPGA combination architecture for DSP and FPGA selection and signal processing, and also explain the design of SRIO for high-speed data transmission.

Control of ZnO Sputtering Growth by Changing Substrate Bias Voltage (ZnO 스퍼터링에서 기판전압의 변화에 의한 성장 조절)

  • Meng, Jun;Choi, Jaewon;Jeon, Wonjin;Jo, Jungyol
    • Journal of the Semiconductor & Display Technology
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    • v.16 no.2
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    • pp.94-97
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    • 2017
  • Amorphous Si has been used for data processing circuits in flat panel displays. However, low mobility of the amorphous Si is a limiting factor for the data transmission speed. Metal oxides such as ZnO have been studied to replace the amorphous Si. ZnO is a wide bandgap (3.3 eV) semiconductor with high mobility and good optical transparency. When ZnO is grown by sputtering with $O_2$ as an oxidizer, there can be many ion species arising from $O_2$ decomposition. $O^+$, $O_2{^+}$, and $O^-$ ions are expected to be the most abundant species, and it is not clear which one contributes to the ZnO growth. We applied alternating substrate voltage (0 V and -70 V) during sputtering growth. We studied changes in transistor characteristics induced by the voltage switching. We also compared ZnO grown by dc and rf sputtering. ZnO film was grown at $450^{\circ}C$ substrate temperature. ZnO thin-film transistor grown with these methods showed $7.5cm^2/Vsec$ mobility, $10^6$ on-off ratio, and -2 V threshold voltage.

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Implementation of Ka-band Satellite Broadcasting/LNB with High Dynamic Range (Ka-band 고감도 위성방송용/LNB 최적화 설계)

  • Mok, Gwang-Yun;Lee, Kyung-Bo;Rhee, Young-Chul
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2016.10a
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    • pp.66-69
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    • 2016
  • In this paper, we suggests a Ka-band LNB considering next-generation UHD satellite TVRO. Since Ka-band has grater attenuation than Ku-band in atmosphere, we designed the low-noise down-converter to improve receiving sensitivity and to extend a dynamic range of receiver. It aims to compensate a quality of ultra high definition transmission signal for rainfall. The low-noise block diagram consists of a three-staged amplifier (LNA), band-pass filter for deleting image (BPF), mixer and IF when considering nonlinear characteristics in the receiver RF front end module. Also, we showed a LNB through optimization processes affecting dynamic range directly in receiver FEM. Asa resuly of experiment, the gain of low-noise down-converter show between 58.5dB and 60.7dB, the noise figure has a high characteristic as 1.38dB. Finally, the phase noise of local oscillator is -63.10dBc at 100MHz offset frequency.

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