• The Transactions of The Korean Institute of Electrical Engineers
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• v.63 no.3
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• pp.404-408
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• 2014

In this research we evaluate the excitation homogeneity and SAR of three different Tx arrays after B1+ Shimming in the human body at 3T. Through the simulations, we compared the field properties that are standard deviation and mean value of transverse magnetization for 1) strip line TEM array, 2) rectangular loop array, 3) combined array of strip line element and rectangular loop and shown the utilities of B1+ shimming in human body model. After B1+ shimming, it is evaluated four different types of SAR for body mesh through whole body simulation; those are average, maximum 1-cell, maximum 1-gram, and maximum 10-gram SAR. It appears that in this particular comparison an array based on strip line elements can produce better homogeneity and lower SAR than an array of rectangular loops or an array of combined elements (strip line and loop). While many factors are considered in designing coils for production, it is hoped that methods and results like these will be used in the future to guide decisions and maximize benefit.

• Journal of The Institute of Information and Telecommunication Facilities Engineering
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• v.8 no.1
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• pp.12-17
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• 2009

In this paper, We play it for the purpose of study about the power amplifier which applied DGS and adaptive bias circuit structure to general Doherty amplifier for the efficiency of a RF power amplifier and a linearity improvement in the WiBro band. As for the IMD3, 3.4dBc was improved with -26.3dBc when we did the measurement result existing Doherty power amplifier and comparison of the Doherty power amplifier which applied an adaptive bias circuit and the DGS which proposed in this paper, and the mean power efficiency verified what was increased in 37%. Also, we were able to know PAE of 36.6% with output power 34.0dBm in P1dB when magnitude of an input signal was 25.6dBm. we did 6dB back off in output P1dB in order to confirm the ACPR which was a nonlinear characteristic and measured the ACPR. we showed the -34.55dBc which was a value of -34.5dBc or below in the 4.77MHz off-set that was a transmission standard. Therefore, we were able to know that we were satisfied with a spectrum mask standard.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.28.1-28.1
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• 2011

비휘발성 저항 메모리소자인 ReRAM은 간단한 소자구조와 빠른 동작특성을 나타내며 고집적화에 유리하기 때문에 차세대 메모리소자로써 각광받고 있다. 현재, 이성분계 산화물, 페로브스카이트 산화물, 고체 전해질 물질, 유기재료 등을 응용한 저항메모리소자 응용에 대한 연구가 활발히 진행되고 있다. 그 중 ZnO 박막은 이성분계 산화물로써 조성비가 간단하고, 빠른 동작특성을 나타내며, 높은 저항 변화율을 보이기 때문에 ReRAM에 응용 가능한 재료로써 기대되고 있다. 또한 가시광선 영역에서 광학적으로 투명한 특성을 보이기 때문에 투명소자 응용에도 많은 연구가 진행되고 있다. 본 연구에서는 Metal/Insulator/Metal (Al/ZnO/Al) 구조의 소자를 제작하여 저항 메모리 특성을 평가하였다. Radio frequency (RF) sputter를 이용하여 ZnO 박막을 합성하고 박막의 결정성을 평가하였으며, resistive switching 효과를 관찰하였다. 합성된 박막 내부의 결정성은 메모리 구동 저항에 영향을 주며, 이를 제어하여 신뢰성있는 메모리 효과를 얻을 수 있었다. 특히 박막의 두께를 제어함으로써 구동전압의 변화를 관찰하였으며 소자에 적합한 두께를 평가할 수 있었다. 또한, ZnO 박막 내의 결함에 따른 on/off 저항의 변화를 관찰할 수 있었다. 제작된 저항 메모리소자는 unipolar 특성을 보였으며, 높은 on/off 저항의 차이를 유지하였다. Scanning electron microscope(SEM)을 통해 합성된 박막의 형태를 평가하였고, X-ray diffraction (XRD) 및 transmission electron microscopy (TEM)을 통해 결정성을 평가하였으며, photoluminescence (PL) spectra 분석을 통하여 박막 내부의 결함 정도를 평가하였다. 제작된 소자의 전기적 특성은 HP-4145를 이용하여 측정하고 비교 분석하였다.

• Korean Journal of Materials Research
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• v.17 no.6
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• pp.323-330
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• 2007

We fabricated thermaly evaporated 10 nmNi/(poly)Si films to investigate the energy saving property of silicides formed by rapid thermal annealing (RTA) at the temperature of $300{\sim}1200^{\circ}C$ for 40 seconds. Moreover, we fabricated $10{\sim}50$ nm-thick ITO/Si films with a rf-sputter as reference films. A four-point tester was used to investigate the sheet resistance. A transmission electron microscope (TEM) and an X-ray diffractometer were used for the determination of cross sectional microstructure and phase changes. A UV-VISNIR and FT-IR (Fourier transform infrared rays spectroscopy) were employed for near-IR and middle-IR absorbance. Through TEM analysis, we confirmed $20{\sim}70nm-thick$ silicide layers formed on the single and polycrystalline silicon substrates. Nickel silicides and ITO films on the single silicon substrates showed almost similar absorbance in near-IR region, while nickel silicides on polycrystalline silicon substrate showed superior absorbance above 850 nm near-IR region to ITO films. Nickel silicide on polycrystalline substrate also showed better absorbance in middle IR region than ITO. Our result implies that nano-thick nickel silicides may have exellent absorbing capacity in near-IR and middle-IR region.

• Journal of the Korean Ceramic Society
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• v.30 no.6
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• pp.510-516
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• 1993

$PbTiO_3$ thin films have been formed by rapid thermal annealing(RTA) of $TiO_2$/Pb/$TiO_2$ multilayer films deposited on Si wafers by RF sputtering. Based on the optimal depositon conditions of TiO2 and Pb, $TiO_2$/Pb/$TiO_2$ three layers were deposited for 900$\AA$ each. These films were subjected to RTA process at the temperatures ranging from $400^{\circ}C$ to $900^{\circ}C$ for 30 seconds in air, and were analyzed by X-ray diffraction and transmission electron microscopy to investigate the phases and the microstructures. As a result, perovskite $PbTiO_3$ phases was obtained above $500^{\circ}C$ with the trace of unreacted $TiO_2$. RBS analysis revealed the anisotropic behavior of diffusion that the diffusivity of Pb to the bottom $TiO_2$ layer was faster than that of Pb to the top $TiO_2$ layer. The amorphous Pb-silicate was formed between film and Si substrate due to the diffusion of Pb, but Pb-silicate existed locally at the interface and the amount of that phase was very small. Therefore the effect of bottom $TiO_2$ layer as a diffusion barrier was confirmed. $PbTiO_3$ films formed by current technique showed a relative dielectric constant of 60, and the maximum breakdown field reached 170kV/cm.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.13 no.3
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• pp.239-254
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• 1988

In this paper an exciter which performs modulation and amplification is composed of high power(30dBm) VCO(Voltage Controlled Oscillator) using push-pull circuit. Modulation is FSK using PLL(Phase Locked Loop). A single loop PLL synthesizer having sequency range of 42.5-100.5MHz, 25KHz channel spacing and switching time of 1msec converts down the exciter VCO frequency to 1.25MHz. This signal mixed with the FSK modulated signal coming in the phase detector of exciter. The acquisition time of exciter for frequency hoppng is less than 200usec, so the total acquisition time for transmission is less that 1.5msec. There is no need of additional power amplification because power amlifiction by high power VCO is high enough to communicate within near distance. The proposed frequency synthesizer is not complex so it is suitable for low cost slow frequency hopping spread spectrum communication.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.6
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• pp.1138-1145
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• 2003

The Bluetooth wireless technology is the new short-range RF transmission standard for low-power, low-cost, short-range radio links between mobile devices and electric product. The technology can eliminate the confusion of cables, connectors and protocols confounding communications between devices. Mobile phones, pagers, laptops, PDAs, digital cameras and more, all now have a common structure for communicating across their product platforms. In this paper, we present the Bluetooth protocol stack and headset profiles for the communication between mobile phone and headset. And then, we construct application software which is embedded in the device that operates an application over the Bluetooth protocol stack Next we implement wireless headset using MSP430, not real time operating system.

• Journal of information and communication convergence engineering
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• v.5 no.4
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• pp.389-393
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• 2007

The distribution of donated blood for medical purpose is an area that presents many challenges. In order to establish a comprehensive solution, the current patterns of distribution must be reviewed and problems related to it need to be clearly understood. This paper introduces 'Radio Frequency Identification (RFID) System', as a potential solution to some of the problems which arise in the process of blood supply distribution, and a way to systematically manage the blood supply. For the various possible RFID systems, the reader and tag must be suitable for the purpose of blood distribution. A database has been designed that can recognize tags and objects in a ubiquitous RFID blood distribution system. In this paper, we design the real-time software to control the RFID reader system and transponder, using the EEPROM memory by RFID. The experimental results confirm that the transmission rate of 3.9kbps for RF is 125 KHz. The electric power usage of transponder chip is $100{\mu}W$, with the recognition distance is about 7cm range.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.616-619
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• 2003

This work presents the design, fabrication and microwave performance of distributed analog phase shifter (DAPS) fabricated on $(Ba,\;Sr)TiO_3$ (BST) thin films for X-band applications. Ferroelectric BST thin films were deposited on MgO substrates by pulsed laser deposition. The DAPS consists of high impedance coplanar waveguide (CPW) and periodically loaded tunable BST interdigitated capacitors (IDC). In order to reduce the insertion loss of DAPS and to remove the alteration of unloaded CPW properties according to an applied dc bias voltage, BST layer under transmission lines were removed by photolithography and RF-ion milling. The measured results are in good agreement with the simulated results at the frequencies of interest. The measured differential phase shift based on BST thin films was $24^{\circ}$ and the insertion loss decreased from 1.1 dB to 0.7 dB with increasing the bias voltage from 0 to 40V at 10 GHz.

• Proceedings of the IEEK Conference
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• 2002.07b
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• pp.1133-1136
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• 2002

We designed and fabricated a low local oscillation (LO) power V-band CPW mixer module using a CPW-to-waveguide transition technology for the application of millimeter-wave wireless communication systems. The mixer was designed using a unique gate mixing architecture to achieve simultaneously a low LO input power, a high conversion gain, and good LO-RF isolation characteristics. The fabricated mixer exhibited a high conversion gain of 2 dB at a low LO power of 0 dBm. For data transmission of the 60 ㎓ wireless LNA systems, we fabricated a CPW-to-waveguide converter module of WR-15 type and mounted the fabricated mixer in the converter module. The fabricated V-band mixer exhibited a higher conversion gain and a lower LO input power than other reported V-band mixers.