• Journal of the Korean Ceramic Society
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• v.53 no.1
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• pp.110-115
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• 2016

We prepared a working electrode (WE) coated with 0 ~ 50 nm-thick indium gallium zinc oxide(IGZO) by using RF sputtering to improve the energy conversion efficiency (ECE) of a dye sensitized solar cell (DSSC). Transmission electron microscope (TEM) and energy dispersive spectroscopy (EDS) were used to analyze the microstructure and composition of the IGZO layer. UV-VIS-NIR spectroscopy was used to determine the transparency of the WE with IGZO layers. A solar simulator and a potentiostat were used to confirm the photovoltaic properties of the DSSC with IGZO layer. From the results of the microstructural analysis, we were able to confirm the successful deposition of an amorphous IGZO layer with the expected thickness and composition. From the UV-VIS-NIR analysis, we were able to verify that the transparency decreased when the thickness of IGZO increased, while the transparency was over 90% for all thicknesses. The photovoltaic results show that the ECE became 4.30% with the IGZO layer compared to 3.93% without the IGZO layer. As the results show that electron mobility increased when an IGZO layer was coated on the $TiO_2$ layer, it is confirmed that the ECE of a DSSC can be enhanced by employing an appropriate thickness of IGZO on the $TiO_2$ layer.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.6
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• pp.29-36
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• 2016

A wireless passive sensor network is a network which, by letting separate RF sources supply energy to sensor nodes, is able to live an eternal life without batteries. Against expectations about an eternal life, however, a wireless passive sensor network still has many problems; scarcity of energy, non-simultaneity of energy reception and data transmission and inefficiency in resource allocation. In this paper, we focus on a wireless passive sensor network providing a packet service which is tolerable to packet losses but requires timely delivery of packets. Perceiving the practical constraints, we then consider a contending-type MAC scheme, rooted in framed and slotted ALOHA, for supporting many sensor nodes to deliver packets to a sink node. Next, we investigate the network-wide throughput achieved by the MAC scheme when the packets transmitted by geographically scattered sensor nodes experience path losses hence capture phenomena. Especially, we derive an exact formula of network-wide throughput in a closed form when 2 sensor nodes reside in the network. By controlling design parameters, we finally optimize the contending-type MAC scheme as to attain the maximum network-wide throughput.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.43 no.5 s.347
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• pp.77-83
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• 2006

In this paper, we designed, constructed and evaluated the system for the FTTH suited to a residence and apartment using CWDM-PON techniques. These systems have capacity to service at 100Mbps rate to 384 users in the same breath. Also, the services include the internet, CATV, IPTV and wireless LAN. In the case of ire network, the data could be transmitted by UTP cable and optical fiber and case of wireless one, the data transmitted using WLAN. The distance between the cental office and the user is 20km and the data rate is 100Mbps maximum. Of course, the optical network used just one fiber optical core. For the basic material, we obtained the characteristics of optical transceiver module, Mux/Demux and transmission qualities depends on the environment.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.48 no.2
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• pp.85-89
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• 2011

In this paper, a novel Class-E power amplifier using metamaterials has been realized with one RF LDMOS diffusion metal-oxide-semiconductor field effect transistor. The CRLH structure can lead to metamaterial transmission line with the Class-E power amplifier tuning capability. The CRLH TL is achieved by the frequency offset and the nonlinear phase slope of the CRLH TL for the matching network of the power amplifier. Also, the proposed power amplifier has been realized by using the CRLH structure in the output matching network for better efficiency. Operating frequencies are chosen at 13.56 MHz in this work. The measured results show that the output power of 39.83 dBm and the gain of 11.83dB was obtained. At this point, we have obtained the power-added efficiency (PAE) of 73 % at operation frequency.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.7
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• pp.757-765
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• 2007

OFDM system is an excellent high speed transmission method but it is seriously sensitive to the phase noise and IQ imbalance. Therefore, in this paper, we analyze the communication performance of the OFDM communication system with IQ imbalance and phase noise. Phase noise's variance can be calculated by integral calculus of phase noise power spectrum. From simulation results, it can be shown that the BER performances show different change according to the phase noise variance and IQ imbalance amount. When amplitude imbalance is ${\varepsilon}$=0.2; 0.3; 0.4 and phase imbalance is ${\phi}=10^0$, and distribution of phase noise is ${\sigma}^2=0.012$, BER is degraded by 2.88 dB, 3.61 dB, 4.09 dB in $10^{-5}$ in the respect of the SNR penalty.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.14 no.11
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• pp.2391-2396
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• 2010

The power-controlled six-port element that can control the local oscillator signal power and receiving RF signal power was designed and implemented in this paper. The direct conversion six-port element configuration was proposed, which provides the constant six-port output power by controlling the six-port input power with various signal strength. The direct conversion six-port element protects the power detector element of six-port receiver from the saturation status and compensates the transmission performance degradation. For implementation of power-controlled six-port element, the power-controlled six-port element including the power controller was analyzed. The implemented power-controlled six-port element shows the power control capability of 36 dB and gain imbalance of about 1.6 dB, phase imbalance of about $4^{\circ}$ in the frequency range of 1.69 GHz. The measured results show the good performance as direct conversion front-end element.

• Journal of Advanced Marine Engineering and Technology
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• v.37 no.4
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• pp.425-430
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• 2013

Robust and high speed underwater communication is severely limited when compared to communications in terrestial. In free space, RF communication operates over long distances at high data rates. However, the obstacle in seawater is the severe attenuation due to the conducting nature. Acoustic modems are capable of long range communication up to several tens of kilometers, but it has low data-rate, high power consumption and low propagation speed. An alternative means of underwater communication is based on optics, wherein high data rates are possible. In this paper, the characteristics of underwater channel in the range of visible wavelength is investigated. And the possibility of optical wireless communication in underwater is also described. The LED-based transceiver and CMOS sensor module are integrated in the system, and the performance of image transmission was demonstrated.

• Journal of Sensor Science and Technology
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• v.10 no.3
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• pp.187-195
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• 2001

A wireless telemetry measurement system, using ISFETs, was developed for environmental monitoring applications, industrial processes, medical treatments and so on. This system is composed of the measurement part located at remote site and a personal computer(PC) which control whole instrument process. The measurement part transmits measured data to the PC by RF transceiver, and transmitted data are analyzed and handled in the PC. Proposed system utilizing time division multiplexing for the transmission of 3channel ISFET signal. The measurement part has an identification number(ID) so that the PC controls many measurement parts separately. Experiments were performed using pH-ISFETs, and the implemented system operates well within designed specification and accuracy of 0.1 pH.

• Korean Journal of Materials Research
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• v.12 no.6
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• pp.464-469
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• 2002

$SrBi_2Nb_2O_9(SBN)$ thin films were grown on Pt/Ti/Si and p-type Si(100) substrates by rf-magnetron co-sputtering method using two ceramic targets, $SrNb_2O_6\; and \;Bi_2O_3$. The structural and electrical characteristics have been investigated to confirm the possibility of the SBN thin films for the applications to destructive and nondestructive read out ferroelectric random access memory(FRAM). For the optimum growth condition X-ray diffraction patterns showed that SBN films had well crystallized Bi-layered perovskite structure after $700^{\circ}C$ heat-treatment in furnace. From this specimen we got remnant polarization $(2P_r)$ of about 6 uC/$\textrm{cm}^2$ and coercive voltage $(V_c)$ of about 1.5 V at an applied voltage of 5 V. The leakage current density was $7.6{\times}10^{-7}$/A/$\textrm{cm}^2$ at an applied voltage of 5V. And for the NDRO-FRAM application, properties of SBN films on Si substrate has been investigated. From transmission electron microscopy (TEM) analysis, we found the furnace treated sample had a native oxide about 2 times thicker than the RTA treated sample and this thick native oxide layer had a bad effect on C-V characteristics of SBN/Si thin film. After $650^{\circ}C$ RTA process, we got the improved memory window of 1.3 V at an applied voltage of 5 V.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.41.2-41.2
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• 2011

Recently, scaling down of ULSI (Ultra Large Scale Integration) circuit of CMOS (Complementary Metal Oxide Semiconductor) based electronic devices become much faster speed and smaller size than ever before. However, very narrow interconnect line width causes some drawbacks. For example, deposition of conformal and thin barrier is not easy moreover metallization process needs deposition of diffusion barrier and glue layer. Therefore, there is not enough space for copper filling process. In order to overcome these negative effects, simple process of copper metallization is required. In this research, Cu-V thin alloy film was formed by using RF magnetron sputter deposition system. Cu-V alloy film was deposited on the plane $SiO_2$/Si bi-layer substrate with smooth and uniform surface. Cu-V film thickness was about 50 nm. Cu-V layer was deposited at RT, 100, 150, 200, and $250^{\circ}C$. XRD, AFM, Hall measurement system, and XPS were used to analyze Cu-V thin film. For the barrier formation, Cu-V film was annealed at 200, 300, 400, 500, and $600^{\circ}C$ (1 hour). As a result, V-based thin interlayer between Cu-V film and $SiO_2$ dielectric layer was formed by itself with annealing. Thin interlayer was confirmed by TEM (Transmission Electron Microscope) analysis. Barrier thermal stability was tested with I-V (for measuring leakage current) and XRD analysis after 300, 400, 500, 600, and $700^{\circ}C$ (12 hour) annealing. With this research, over $500^{\circ}C$ annealed barrier has large leakage current. However V-based diffusion barrier annealed at $400^{\circ}C$ has good thermal stability. Thus, thermal stability of vanadium-based thin interlayer as diffusion barrier is good for copper interconnection.