• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.12
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• pp.130-135
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• 1995

GaAs power MESFET's with 0.5 .mu.m gate length using a conventional UV lithography and angle evaporations are fabricated and then DC and RF characteristics are measured and carefully analyzed. The 0.5$\mu$m GaAs power MESFET's are fabricated on epi-wafers which have an undoped GaAs layer inbetween n+ and n GaAs layers grown by MBE, and by the processes such as an image reversal(IR), air-bridge, and our developed 0.5 .mu.m gate fabrication techniques. The total gate widths of the fabricated 0.5$\mu$m GaAs power MESFETs are 0.6-3.0 mm, the current saturation of them 80-400 mA, the maximum linear and RF output power of them 60-265 mW. The current gain cut-off frequencies for the 0.5$\mu$m GaAs power MESFETs varies 13-16 GHz. For the test frequency of 10 GHz the maximum unilateral transducer power gains and the power added efficiencies of the GaAs power devices are 7.0-2.5 dB and 35.68-30.76 %, respectively.

• The Journal of the Korea institute of electronic communication sciences
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• v.13 no.2
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• pp.321-326
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• 2018

This study describes the design and implementation of TRM(Transmit and Receiver Module) for detection for targets of small RCS(Radar Cross Section). Through the pre-simulation analysis of radar system about RF, the main specifications of TRM are verified. After the fabrication of TRM, the main characteristics such as the maximum output, noise figure, spurious were confirmed. In the future, the radar system test will be carried out by assembling TRMs, antenna radiator, and the transceiver that generates and receivers the radar waveform reflected.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.12
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• pp.2217-2220
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• 2007

In this paper, we propose a new wafer level package (WLP) for the RF MEMS applications. The Film Bulk Acoustic Resonator (FBAR) are fabricated and hermetically packaged in a new wafer level packaging process. With the use of Au-Sn eutectic bonding method, we bonded glass cap and FBAR device wafer which has groove-shaped via formed in the backside. The device wafer includes a electrical bonding pad and groove-shaped via for connecting to the external bonding pad on the device wafer backside and a peripheral pad placed around the perimeter of the device for bonding the glass wafer and device wafer. The glass cap prevents the device from being exposed and ensures excellent mechanical and environmental protection. The frequency characteristics show that the change of bandwidth and frequency shift before and after bonding is less than 0.5 MHz. Two packaged devices, Tx and Rx filters, are attached to a printed circuit board, wire bonded, and encapsulated in plastic to form the duplexer. We have designed and built a low-cost, high performance, duplexer based on the FBARs and presented the results of performance and reliability test.

• Proceedings of the KAIS Fall Conference
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• 2011.05a
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• pp.416-420
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• 2011

무선센서네트워크 시스템의 확산에 가장 큰 장애물인 한정된 전원으로 동작하는 특성에 따라 주기적인 배터리 교체에 소요되는 비용이다. 이러한 문제를 해결하기 위하여 원격지에서 에너지를 무선으로 공급하는 자기유지 지원 기술이 연구되고 있다. 본 논문에서는 무선에너지전송을 통해 무선센서네트워크 노드에 에너지를 전송하는 환경을 구축하고 환경에 따라 에너지 수신의 결과를 측정하는 테스트베드를 구축하였다. 구축된 테스트베드는 Powercast사의 915MHz 대역에서 3W EIRP (Equivalent Isotropic Radiated Power) 에너지 송신장치, RF (Radio Frequency) 에너지 획득 모듈 그리고 TI사의 CC2530기반의 무선센서네트워크 노드로 구성되어있다. 또한 수신된 에너지의 양을 측정하고 기록하는 LabView기반의 모니터링 시스템이 구현되었다. 구현된 테스트베드는 다양한 환경에서 RF를 기반의 무선에너지전송을 통한 자기유지(Self-sustainable) 시스템의 전원공급 상태를 모니터링에 활용될 수 있다.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.39 no.3
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• pp.254-260
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• 2011

Telemetry link is dynamic communication link that antenna gain and polarization are varying with the movement of the airplane. In this paper we calculated the antenna gain, polarization mismatch using the flight trajectory, motion of the airplane and 3D antenna pattern. And we modeled the multipath environment to the 2-Ray spherical earth reflection geometry, estimated the received signal strength when the narrow beam antenna received the RF signal transmitted from the airplane. Also we performed the flight test and after comparing measured value with the estimated value, we confirmed to almost coincide with each other.

• Journal of the Korean Society for Heat Treatment
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• v.33 no.1
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• pp.25-32
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• 2020

In this study, the tribology of laser patterned DLC thin film was studied. DLC thin films were coated by RF-PECVD to improve the durability of tungsten carbide (WC) materials. DLC thin films have high hardness and low friction characteristics. Dot and line patterning was processed on the surface of DLC thin film with femtosecond laser, and the coefficient of friction was improved. As a result of ball on disk abrasion test, the hardness and friction coefficient of DLC thin films were much better than that of WC material. The friction coefficient of DLC thin film with dot patterning and line patterning showed better results. The excellent performance of the laser patterned DLC coating is appeared to reduce the coefficient of friction due to the reduction of surface contact area.

• The Korean Journal of Ceramics
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• v.3 no.3
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• pp.182-186
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• 1997

Diamond-like carbon(DLC) films were deposited on silicon substreates by using an RF plasmaassisted CVD apparatus; the effects of deposition conditions such as CH4 gas pressure and substrate bias voltage on DLC film friction and wear were examined in both friction and scratch tests. In friction tests critical loads at which the friction coefficient increases abruptly depend on substrate bias voltages: critical loads deposited at a bias voltage of -100 V exceed those deposited at other bias voltages. Critical loads are correlated with DLC film hydrogen content. Critical DLC film loads in scratch tests depended considerably less than in friction tests. The friction coefficient of DLC films depends on neither substrate bias voltage nor CH4 gas pressure.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.5
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• pp.50-58
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• 2013

In this paper, we present the implementation result of an UWB terminal for mobile tactical networks. Considering the major characteristics of the terminals of tactical networks, i) targeting voice service, ii) pedestrian users, and iii) demanding high network fidelity, we designed all protocol layers from physical layer to applications layer. The designed terminal is implemented in forms of software and hardware with RF ASIC, FPGA, DSP, and GPP. The functionality of the implemented terminal is validated by successfully performing 1 to 1 and multi-hop voice communication test.

• Journal of electromagnetic engineering and science
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• v.11 no.3
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• pp.213-219
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• 2011

Simulative target generators are needed for testing and calibrating various radar systems. The generator in this study discriminates the transmitting frequency from a radar and simulates parameters like target range, range rate, and atmospheric attenuation using the digital RF memory technique. The simulative target echo is then sent to the radar for testing and evaluation. This paper proposes a novel architecture for controlling the digital RF memory so it continually writes ADC data to the memory and reads it for the DAC with increasing one step address in order to control the delay of target range in a simple way. The target echo is programmed according to various preprogrammed scenarios and is generated in real time using a wireless local area network (LAN). To analyze the detected and generated target information easily, the system times for the radar and simulative target generator are synchronized using a global positioning system (GPS).

• Journal of Electrical Engineering and information Science
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• v.2 no.6
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• pp.202-207
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• 1997

Design and fabrication issues for an L-band GaAs Monolithic Microwave Integrated Circuit(MMIC) Voltage Controlled Oscillator(VCO) as a component of Personal Communications Systems(PCS) Radio Frequency(RF) transceiver are discussed. An ion-implanted GaAs MESFET tailored toward low current and low noise with 0.5mm gate length and 300mm gate width has been used as an active device, while an FET with the drain shorted to the source has been used as the voltage variable capacitor. The principal design was based on a self-biased FET with capacitive feedback. A tuning range of 140MHz and 58MHz has been obtained by 3V change for a 600mm and a 300mm devices, respectively. The oscillator output power was 6.5dBm wth 14mA DC current supply at 3.6V. The phase noise without any buffer or PLL was 93dB/1Hz at 100KHz offset. Harmonic balance analysis was used for the non-linear simulation after a linear simulation. All layout induced parasitics were incorporated into the simulation with EEFET2 non-linear FET model. The fabricated circuits were measured using a coplanar-type probe for bare chips and test jigs with ceramic packages.