• 한국전기전자재료학회논문지
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• 제16권7호
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• pp.564-568
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• 2003

The etching of Au thin films have been performed in an inductively coupled CF$_4$/Cl$_2$/Ar plasma. The etch rates were measured as CF$_4$ contents added from 0 to 30 % to Cl$_2$/Ar plasma, of which gas mixing ratio was fixed at 20%. Other parameters were fixed at an rf power of 700 W, a dc bias voltage of 150 V, a chamber pressure of 15 mTorr, and a substrate temperature of 3$0^{\circ}C$. The highest etch rate of the Au thin film was 3700 $\AA$m/min at a 10% additive CF$_4$ into Cl$_2$/Ar plasma. The surface reaction of the etched Au thin films was investigated using x-ray photoelectron spectroscopy (XPS) analysis. XPS analysis indicated that Au reacted with Cl and formed Au-Cl, which is hard to remove on the surface because of its high melting point. The etching products could be sputtered by Ar ion bombardment.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 추계학술대회 논문집 전기물성,응용부문
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• pp.285-288
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• 2004

Recently, the RF inductive discharge or inductively coupled plasma(ICP) continues to attract growing attention as an effective plasma source in many industrial applications, the best known of which are plasma processing and lighting technology. To the point of lighting sources, the electrodeless fluorescent lamps utilizing an inductively coupled plasma(ICP) have been objects of interest and research during the last decades, mainly because of their potential for extremely long life, high lamp efficacies, rapid power switching response. The electrodeless fluorescent lamp that is dealt with in this work comprises a bulb filled with rare gas and amalgam of vaporizable metal and has a coil provided with a winding around the ferrite. Current through a coil produces a magnetic field in the discharge space The changing magnetic flux then produces an azimuthal electric field E around the coil, according to Faraday's laws of magnetic induction.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2003년도 추계학술발표회초록집
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• pp.54-54
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• 2003

DLC films were deposited on Si(100) substrates by inductively coupled plasma (ICP) assisted chemical vapor deposition (CVD). A mixture of acetylene (C$_2$H$_2$) and argon (Ar) gases was used as the precursor and plasma source, respectively. The structure of the films was characterized by the Raman spectroscopy. Results from the Raman spectroscopy analysis indicated that the property change of the DLC films is due to the sp$^3$ and sp$^2$ ratio in the films under various conditions such as ICP power, working pressure and RF substrate bias. The hydrogen content in the DLC films was determined by an electron recoil detector (ERB). The roughness of the films was measured by atomic force microscope (Am). A microhardness tester was used for the hardness and elastic modulus measurement. The DLC film showed a maximum hardness of 37㎬. In this work, the relationship between deposition parameters and mechanical properties were discussed.

• Korean Chemical Engineering Research
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• 제48권3호
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• pp.355-358
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• 2010

유도 결합 저온 플라즈마를 사용하여 폴리카보네이트 시료를 처리한 후 표면 특성 변화를 분석하였다. 표면 거칠기는 플라즈마 공정조건에 상관없이 표면 처리 후에 모두 증가하였으나, 산소 분위기에서 플라즈마 처리했을 때 가장 크게 증가하였다. 표면의 화학 결합 분석에서 플라즈마 처리 전 시료의 산소 함량이 산소 플라즈마 처리 후에 43% 증가하여 표면에 친수성 극성기의 형성이 촉진되었다. 공정 변수 중, 처리 시간에 따른 접촉각 변화는 산소 분위기에서 가장 낮은 접촉각 $9.17^{\circ}$을 얻을 수 있었고, 방전 전력의 증가는 같은 처리 시간에서 빠르게 접촉각의 감소를 보여 플라즈마 표면처리 시간을 단축시키는 효과를 주었다. 그러나 방전기체 유량의 증가에 대한 접촉각 변화에 대한 영향성이 크지 않았다.

• Transactions on Electrical and Electronic Materials
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• 제14권2호
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• pp.67-70
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• 2013

In this study, we changed the input parameters (gas mixing ratio, RF power, DC bias voltage, and process pressure), and then monitored the effect on TiN etch rate and selectivity with $SiO_2$. When the RF power, DC-bias voltage, and process pressure were fixed at 700 W, - 150 V, and 15 mTorr, the etch rate of TiN increased with increasing $CF_4$ content from 0 to 20 % in $CF_4$/Ar plasma. The TiN etch rate reached maximum at 20% $CF_4$ addition. As RF power, DC bias voltage, and process pressure increased, all ranges of etch rates for TiN thin films showed increasing trends. The analysis of x-ray photoelectron spectroscopy (XPS) was carried out to investigate the chemical reactions between the surfaces of TiN and etch species. Based on experimental data, ion-assisted chemical etching was proposed as the main etch mechanism for TiN thin films in $CF_4$/Ar plasma.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.611-615
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• 2004

In recent, there have been several developments in lamp technology that promise savings in electrical power consumption and improved quality of the lighting space. Above all, Electrodeless fluorescent lamp is the removal of internal electrodes and heating filaments that are a light-limiting factor of conventional fluorescent lamps. The electrodeless fluorescent lamp is intended as a high efficacy replacement for the incandescent reflector lamp in many applications. Therefore, the electrodeless fluorescent lamps is substantially higher than that of conventional fluorescent lamps and last up to 60,000 hours. In this paper, electron temperature and electron density were measured in a radio-frequency inductively coupled plasma using a Langmuir probe method for emission characteristics. Measurement was conducted in an argon discharge for pressure from 10 [mTorr] and input RF power 100 [W] to 150 [W]. As for the electron density, a electron temperature was more distinguished for a emission characteristic. The results of ideal may contribute to systematic understanding of a electrodeless fluorescent lamps of emission characteristics.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.544-547
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• 2006

In this study, the characteristics of large area internal linear ICP sources of $1,020mm{\times}920mm$ (substrate area is $880mm{\times}660mm$) were investigated using a multiple linear antennas with U-type parallel connection. Using the multiple linear antennas with U-type parallel connection, a high plasma density of $2{\times}10^{11}/cm^3$ and a high power transfer efficiency of about 88% could be obtained at 5kW of RF power and with 20mTorr Ar. A low plasma potential of less than 26V and a low electron temperature of $2.6{\sim}3.2eV$ could be also obtained. The measured plasma uniformity on the substrate size of 4th generation $(880mm{\times}660mm)$ was about 4%, therefore, it is believed that the multiple linear antennas with U-type parallel connection can be successfully applicable to the large area flat panel display processing.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.253-253
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• 2012

Low temperature SiOx film process has being required for both silicon and oxide (IGZO) based low temperature thin film transistor (TFT) for application of flexible display. In recent decades, from low density and high pressure such as capacitively coupled plasma (CCP) type plasma enhanced chemical vapor deposition (PECVD) to the high density plasma and low pressure such as inductively coupled plasma (ICP) and electron cyclotron resonance (ECR) have been used to researching to obtain high quality silicon oxide (SiOx) thin film at low temperature. However, these plasma deposition devices have limitation of controllability of process condition because process parameters of plasma deposition such as RF power, working pressure and gas ratio influence each other on plasma conditions which non-leanly influence depositing thin film. In compared to these plasma deposition devices, neutral beam assisted chemical vapor deposition (NBaCVD) has advantage of independence of control parameters. The energy of neutral beam (NB) can be controlled independently of other process conditions. In this manner, we obtained NB dependent high crystallized intrinsic and doped silicon thin film at low temperature in our another papers. We examine the properties of the low temperature processed silicon oxide thin films which are fabricated by the NBaCVD. NBaCVD deposition system consists of the internal inductively coupled plasma (ICP) antenna and the reflector. Internal ICP antenna generates high density plasma and reflector generates NB by auger recombination of ions at the surface of metal reflector. During deposition of silicon oxide thin film by using the NBaCVD process with a tungsten reflector, the energetic Neutral Beam (NB) that controlled by the reflector bias believed to help surface reaction. Electrical and structural properties of the silicon oxide are changed by the reflector bias, effectively. We measured the breakdown field and structure property of the Si oxide thin film by analysis of I-V, C-V and FTIR measurement.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제50권2호
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• pp.49-56
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• 2001

Diamond thin films have been deposited on the silicon substrate by inductively coupled radio frequency plasma enhanced chemical vapor deposition system. The morphological features of thin films depending on methane concentration and deposition time have been studied by scanning electron microscopy and Raman spectroscopy. The diamond particles deposited uniformly on silicon substrate($10{\times}10[mm^2]$) at the pressure of 1[torr], a methane concentration of 1[%], a hydrogen flow rate of 60[sccm], a substrate temperature of $840\{sim}870[^{\circ}C]$, an input power of 1[kw], and a deposition time of 1[hour]. With increasing deposition time, the diamond particles grew, and than about 3 hours have passed, the graphitic phase carbon thin film with "cauliflower-like" morphology deposited on the diamond thin films.

• Transactions on Electrical and Electronic Materials
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• 제4권3호
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• pp.1-4
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• 2003

The etching of Au thin films has been performed in an inductively coupled $CF_4 / Cl_2 / Ar$ plasma. The etch properties including etch rate and selectivity were examined as $CF_4$ content adds from o to $30\%$ to $Cl_2/Ar$ plasma. The $Cl_2/(Cl_2 + Ar)$ gas mixing ratio was fixed at $20\%$. Other parameters were fixed at an rf power of 700 W, a dc bias voltage of -150 V, a chamber pressure of 15 mTorr, and a substrate temperature of $30^{\circ}C$. The highest etch rate of the Au thin film was 370 nm/min at a $10\%$ additive $CF_4$ into $Cl_2/Ar$ gas mixture. The surface reaction of the etched Au thin films was investigated using x-ray photoelectron spectroscopy (XPS) analysis. The XPS analysis shows that the intensities of Ail peaks are changed, indicating that there is a chemical reaction between Cl and Au. Au-Cl is hard to remove on the surface because of its high melting point. However, etching products can be sputtered by Ar ion bombardment.