• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.357-362
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• 1996

Several applications of radio-frequency (RF) thermal plasma to film formation are reviewed. Three types of injection plasma processing (IPP) technique are first introduced for the deposition of materials. Those are thermal plasma chemical vapor deposition (CVD), plasma flash evaporation, and plasma spraying. Radio-frequency (RF) plasma and hybrid (combination of RF and direct current(DC)) plasma are next introduced as promising thermal plasma sources in the IPP technique. Experimental data for three kinds of processing are demonstrated mainly based on our recent researches of depositions of functional materials, such as high temperature semiconductor SiC and diamond, ionic conductor $ZrO_2-Y_2O_3$ and high critical temperature superconductor $YBa_2Cu_3O_7-x$. Special emphasis is given to thermal plasma flash evaporation, in which nanometer-scaled clusters generated in plasma flame play important roles as nanometer-scaled clusters as deposition species. A novel epitaxial growth mechanism from the "hot" clusters namely "hot cluster epitaxy (HCE)" is proposed.)" is proposed.osed.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2011.11a
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• pp.694-696
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• 2011

The high enthalpy plasma research center in Chonbuk national university is under construction for four types of plasma equipments. The equipments are 1set of 0.4 MW class enhanced Huels type plasma equipment, 1 set of 2.4 MW class enhanced Huels type plasma quipment, 1 set of 60 kW RF plasma equipment and 1 set of 200 kW RF plasma equipment. 60kW RF plasma system is R&D and pilot scale production equipment of nano powder synthesis and plasma spray coating. 200kW RF plasma system is mass production equipment with high power capacity of nano powder synthesis. 0.4MW plasma system can be applied to the ground test facility for material testing under re-entry conditions for space vehicles.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2010.11a
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• pp.781-783
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• 2010

Chonbuk national university High-enthalpy plasma research center is under construction for 60kW and 200kw ICP(RF) Plasma system as Advance Material R&D and production equipment. The 60kW & 200kW ICP(RF) plasma systems will contribute to promote Korea's material industrial development and Thermal plasma technology.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1568-1569
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• 2006

An electric probe is a conductor inserted into the plasma, by which plasma density and electron temperature can be deduced from the collected current (I) versus applied voltage (V) to the probe. In RF plasma the I-V characteristics of electric probe is distorted due to the RF fluctuation of plasma potential, so that it is hard to measure the real plasma parameters, especially the electron temperature. To eliminate the RF fluctuation, several compensation methods are developed such as RF compensation probe, peak-to-peak method, asymmetric double probe. By comparing proposed methods, a suitable method is to be introduced in determining electron temperatures in RF plasma.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.1
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• pp.20-23
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• 2004

In this paper, the emission properties of electrodeless fluorescent lamp were discussed using the inductively coupled plasma. To transmit the electromagnetic energy into the chamber, a RF power of 13.56 [MHz] was applied to the antenna and considering the Ar gas pressure and the RF electric power change, the emission spectrum, Ar I line, luminance were investigated. At this time, the input parameter for ICP RF plasma, Ar gas pressure and RF power were applied in the range of 10∼60 [mTorr], 10∼300 [W], respectively. From emission intensity and lumnance intensity results, the mode transition from E-mode to H-mode was observed. This implies that this method can be used to find an optimal RF power for efficient light illumination in an electrodeless fluorescent lamp.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.79-79
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• 2012

A high temperature and a low temperature plasma process technologies were developed and demonstrated for synthesis, hybrid formation, surface treatment and CVD engineering of nano powder. RF thermal plasma is used for synthesis of spherical nano particles in a diameter ranged from 10 nm to 100 nm. A variety of nano particules such as Si, Ni, has been synthesized. The diameter of the nano-particles can be controlled by RF plasma power, pressure, gas flow rate and raw material feed rate. A modified RF thermal plasma also produces nano hybrid materials with graphene. Hemispherical nano-materials such as Ag, Ni, Si, SiO2, Al2O3, size ranged from 30 to 100 nm, has been grown on graphene nanoplatelet surface. The coverage ranged from 0.1 to 0.7 has been achieved uniformly over the graphene surface. Low temperature AC plasma is developed for surface modification of nano-powder. In order to have a three dimensional and lengthy plasma treatment, a spiral type of reactor has been developed. A similar plasma reactor has been modfied for nano plasma CVD process. The reactor can be heated with halogen lamp.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2010.05a
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• pp.417-420
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• 2010

The high enthalpy plasma research center in Chonbuk national university is under construction with the support of the ministry of the education, science and technology as a fundamental research project The project periods are five year and started at July, 1, 2009. The total project budget is about 39,300 million Won. Four types of plasma equipment will be installed in this research center during the project periods. The equipments are 1 set of 0.4 MW class enhanced Huels type plasma equipment, 1 set of 2.4MW class enhanced Huels type plasma equipment, 1 set of 60Kw RF plasma equipment and 1s set of 200 kW RF plasma equipment.

• Journal of the Korean Vacuum Society
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• v.22 no.2
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• pp.66-78
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• 2013

In order to develop of 80 kW RF plasma torch system, we achieved three-dimensional simulations for the extraction of more information as temperature in torch and fluid behavior analysis, etc. The position of powder injection tube, the plasma discharge characteristics with various input current and various length of ceramic tube, and the plasma temperature characteristics with process gas flow rate such those was simulated. RF thermal plasma torch designed by simulation was manufactured that was measured to the maximum of 89.3 kW power. The mass production using developed 80 kW RF thermal plasma torch system were investigated by characteristics manufactured of Si nano powder. The mass-production level of Si nano-powder was average of 539 g/hr and high yield rate of 71.6%, respectively. The particle size distribution $D_{99}/D_{50}$ of manufacturing nano-powder was investigated to 1.98 as a good uniform.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.8
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• pp.607-612
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• 1998

RF HPCVD(Helicon Plasma Chemical Vapor Deposition) has been successfully constructed for diamond thin films. The system consists of plasma generation tube, deposition chamber, pumping lines for gas system. A mixture of $CH_4 and H_2$is used for reaction. Two thermocouples, a quartz tube surrounded by a RF antenna and a magnet, and a high temperature heater were set up in the deposition chamber. The process for the thin film diamond deposition has been carried put in a high vacuum system at a substrate temperature of $800^{\circ}C$, and pressure of 5 mtorr. It is also demonstrated. that the RF HPCVD system has advantages for controlling deposition parameters easily.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.2
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• pp.95-100
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• 1998

A helical inductively coupled plasma asher, which produces low energy and high density plasma, has been built and investigated for photoresist stripping process. Oxygen ion density in the order of $10^{11}/cm^3$ is measured by Langmuir probe, and higher oxygen radical density is observed by Optical Emission Spectrometer. As RF source power is increased, the plasma density and thus photoresist stripping rate are increased. Independent RF bias power to the wafer stage provides a dc bias to the wafer and an ability to add the ion assisted reaction. At 1 KW of the source power, the coupling mechanism of the RF power to the plasma is changed from the inductive mode to the capacitive one at about 1 Torr. This change causes the plasma density and ashing rate decreases abruptly. The critical pressure of the mode change becomes larger with larger RF power.