• Title/Summary/Keyword: RF output power

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A Study of Microwave Output Experiment of Slow Wave Waveguide (지파 도파관을 이용한 마이크로파 출력 실험 연구)

  • Kim, Won-Sop
    • The Transactions of the Korean Institute of Electrical Engineers P
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    • v.58 no.4
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    • pp.465-468
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    • 2009
  • The dispersion relation and the characteristic of propagation are measured. The measurements of the dispersion relation are observed by a plunger method employed in slow plasma density by pumping microwaves on the axis are observed in plasma loaded slow wave structure. In case of small incident microwave powers the well known plasma density cavity are observed. At the axial positions of minimal radius in the waveguides, the maxima og the electron density, the plasma potential and the RF electric field are observed in cases of high-power microwaves.

A Study on the Design and mplementation of Frequency Converter applied to Spectrum Analyzer (스펙트럼 분석기에 적용한 주파수 변환기의 설계 및 구현에 관한 연구)

  • 이진성;송문규;김태회;박영철;차균현
    • Proceedings of the Korean Institute of Communication Sciences Conference
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    • 1991.10a
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    • pp.103-106
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    • 1991
  • Spectrum Analyzer is a useful measure instrument to display the distributed power of electrical signal as a function of frequency. It adopts the superheterodyne receiver, which mixes RF with L0 to output IF. So in this paper, two GHz-order microstrip low-pass filters, 2-section wilkinson power divider, and singly balanced diode mixer have been designed and implemented necessary to make the frequency converter applied to RF spectrum analyzer.

Smart Phone RF Wireless Charging with 5.8-GHz Microwave Wireless Power Receiver (5.8-GHz무선전력수신기를 이용한 스마트폰 RF 무선충전)

  • Son, Myung Sik
    • Journal of the Semiconductor & Display Technology
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    • v.20 no.2
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    • pp.25-28
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    • 2021
  • In this paper, we studied smart phone RF wireless charging with 5.8-GHz microwave wireless power receiver. The dc output of the receiver connected to super capacitor and DC-DC converter for charging a smart phone. This configuration stably supplies 5V and current for charging it. Studies show that the more receivers are used at close range, the higher the received voltage values and the larger the capacity of the super capacitor, the longer the charging time. The present 5.8-GHz 1W wireless power transmission system is not enough for charging a smartphone mainly due to the lack of current of the receiver.

Two Stage CMOS Class E RF Power Amplifier (2단 CMOS Class E RF 전력증폭기)

  • 최혁환;김성우;임채성;오현숙;권태하
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.7 no.1
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    • pp.114-121
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    • 2003
  • In this paper, low voltage and two stage CMOS Class E RF power amplifier for ISM(Industrial/Scientific/Medical) Open Band is presented. The power amplifier operates at 2.4GHz frequency, and is designed and simulated with a 0.35um CMOS technology and HSPICE simulator. The power amplifier is simple structure of two stage Class E power amplifier. The design procedure determing matching network was presented. The power amplifier is composed of input stage matching network, preamplifier, interstage matching network, power amplifier, and output stage matching network. The matching networks of input stage and interstage were constituted by pi($\pi$) type and L type respectively. At 2.4GHz operating frequency, and with a 2.5V supply voltage, the power amplifier delivers 23dBm output power to a 50${\Omega}$ load with 39% power added efficiency(PAE).

Design and Fabrication of X-Band GaN HEMT SSPA for Marin Radar System (선박 레이더용 X-대역 300 W급 GaN HEMT 반도체 전력 증폭 장치 설계 및 제작)

  • Heo, John;Jin, Hyeong-Seok;Jang, Ho-Ki;Kim, Bo-Kyun;Cho, Sookhee
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.23 no.11
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    • pp.1239-1247
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    • 2012
  • In this paper, design and fabrication of solid state power amplifier(SSPA) using GaN HEMT chip for X-band frequency are presented. The SSPA consists of the power supply for stable power and the control unit for communication and controlling the internal module, the RF Part to amplify RF signal, In particular the adopted active device for the RF Parts is GaN HEMT Bare chip of TriQuint company, the RF parts consists of pre-stage, drive-stage, main power-stage and each amplifier is designed with input and out matching circuit. The developed power amplifier demonstrated more than 300 W peak output power in condition of 26 % duty, max. pulse width 100us for the X-band frequency( 500 MHz bandwidth) and can apply to marine radar systems.

A fully UHF-powered smart sensor tag in food freshness monitoring (음식물 신선도 모니터링을 위한 풀 패시브 UHF 스마트 센서 태그)

  • Lam, Binh Minh;Chung, Wan-Young
    • Journal of the Institute of Convergence Signal Processing
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    • v.19 no.3
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    • pp.89-96
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    • 2018
  • This study aims to develop a fully passive smart sensing tag utilizing RF (Radio Frequency) energy harvesting technology at UHF (Ultra High Frequency) band of 915MHz. To optimize the power collected under various radiated conditions, an efficient energy harvesting module exploiting a boost circuit with maximum power point tracking (MPPT) is employed. Specifically, the proposed tag features two orthogonal antennas to enhance its capability of both energy scavenging and data transmissions. The experimental result shows that the developed smart sensor tag can scavenge an RF input power of as low as 0.19mW at a distance of 4 meters for a 3.6Vdc output. Furthermore, the proposed smart sensor tag performs the feasibility of completely autonomous monitoring food freshness at 2 meters with a low-power sensor array.

A Novel Predistorter design using a Balanced Type IM3 Generator (평형 구조 혼변조 발생기를 이용한 전치왜곡 선형화기 설계)

  • 정형태;김상원;김철동;장익수
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.41 no.2
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    • pp.65-70
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    • 2004
  • This paper presents a novel linearization scheme for a nonlinear RF amplifier It is based on the amplitude modulation with envelope signal. The 3rd order distortion generator is composed of two FETs and it adopts a balanced structure for the purpose of main carrier cancellation. The amplitude and phase of the IM3 component can be controlled at RF band. This predistorter is implemented and tested at the KOREA PCS Tx. band (1840∼1870MHz). Experimental results of two-tone test show that the IM3 cancellation is achieved about 30-40 ㏈ for the wide dynamic range. The adjacent channel power ratio is improved by over 10 ㏈ at the broad-band CDMA signal with a peak to average power ratio of l0㏈, and this improvement is maintained through a wide range of output power levels.

Two Versions of He-Ne Laser 3.39 μm with Radio Frequency Excitation

  • Kopica, Miroslaw;Choi, Jong-Woon
    • Journal of the Optical Society of Korea
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    • v.12 no.1
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    • pp.31-37
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    • 2008
  • To increase output power of a He-Ne laser we propose to use the capacitive rf discharge and implement four channel structure. Most of experiments were carried out with a single laser tube from this structure to optimize the output mirror transmission, pressure and composition of the mixture. A laser tube of 2.8 mm inner diameter and 50 cm discharge length can give an output power of above 5.5 mW at 3.39 ${\mu}m$. Four such tubes in "matrix" structure let us obtain 20 mW of output. Simplified models which can be used to evaluate the behavior of an equivalent electrical circuit with laser plasma and qualitative characteristics of output power of He-Ne laser were also described.

Implementation of a 13.56 MHz 5kW RF Generator for ISM Band Applications (ISM 대역 응용분야에 사용되는 13.56 MHz 5kW RF 제너레이터 구현)

  • Yoon, Young-Chul;Kim, Young
    • Journal of Advanced Navigation Technology
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    • v.20 no.6
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    • pp.556-561
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    • 2016
  • This paper describes implementation of a 13.56 MHz, 5 kW RF high power generator for ISM band applications. This RF generator consists of four LDMOS modules of 1.25kW class-AB push-pull power amplifier with drive amplifier and its outputs are combined by using Wilkinson type transmission-line transformers. Its generator has a high efficiency and output power better than linearity. In order to discharge power transistor heats, we used on water cooled copper plate. Also, these have a composite circuit of combiner and low-pass filter and safety circuit to detector over and reflected power. The RF generator has achieved a efficiency of 79 % at 5.33 kW of saturated power level experimentally.

Design of Current-Mode Class-D 900 MHz RF Power Amplifier Using Inverse Class-F Technology (Inverse Class-F 기법을 이용한 900 MHz 전류 모드 Class-D RF 전력 증폭기 설계)

  • Kim, Young-Woong;Lim, Jong-Gyun;Kang, Won-Shil;Ku, Hyun-Chul
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.22 no.12
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    • pp.1060-1068
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    • 2011
  • In this paper, Current-Mode Class-D(CMCD) RF Power Amplifier(PA) is designed and implemented at 900 MHz. Conventional CMCD PA has output parallel resonator to reconstruct a fundamental frequency component of the output signal. However the resonator can be removed by connecting inverse class-F PAs because even-harmonic components can be removed by CMCD PA's push-pull structure. Using load-pull, inverse class-F PA with GaN transistors is designed, and CMCD PA with the inverse class-F PA is implemented. The CMCD PA has 64.5 % drain efficiency, 34.2 dBm output power. Comparing with the drain efficiency of a CMCD PA with parallel resonator, the CMCD with the inverse class-F technology has 13.6 % improved drain efficiency.