• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.5 s.120
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• pp.553-562
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• 2007

In this paper, we designed and implemented the system for telemetering ELF(Extremely Low Frequency) magnetic field intensity. The magnetic field measurement system used a 3-axis magnetic field sensor to measure the magnetic field with isotropy and the equalizer to compensate the frequency characteristic in band. By multiplexing three output signals of the magnetic field sensor in time domain, we got the uniform gain and frequency characteristic among three axes. This system was designed that the magnetic field measurement level range was $0.01{\sim}10.0\;uT$ and the measurement frequency band was $40{\sim}180\;Hz$. The control system would access to the magnetic field measurement system with RF and the maximum access distance was 1.0 km. We confirmed that the measurement level error of the fabricated system was within 5 %. The fabricated system was installed to a golf practice range where a high voltage power transmission line was crossed.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.29 no.2
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• pp.138-141
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• 2018

In this paper, we describe the designed digital waveform of a linear frequency-modulated (FM) chirp signal using field-programmable gate arrays (FPGAs) for image radar, and this signal is modulated with an I-Q modulator, and multiplied by 24 frequency multipliers to obtain a 94-GHz W-band wideband chirp generator. The developed chirp generator is an FM signal with a 94-GHz carrier frequency and a 960-MHz bandwidth, and the flatness is less than 1.0 dB at intermediate frequency (IF) (3.9 GHz), 2.0 dB in the W-band, and it has a 0.3-W output power in the W-band.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.12
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• pp.1-6
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• 2007

In this study, we have performed the channel modification of the conventional MHEMT (metamorphic high electron mobility transistor) to improve the breakdown characteristics. The Modified channel consists of the InxGal-xAs channel and the InP sub channel instead of the InxGa1-xAs channel. Since InP has the lower impact ionization coefficient in comparison with In0.53Ga0.47As, we have adopted the InP-composite channel in the modified MHEMT. We have investigated the breakdown mechanism and the RF characteristics for the conventional and the InP- composite channel MHEMTs. From the measurement results, we have obtained the enhanced on and off-state breakdown voltages of 2.4 and 5.7 V, respectively. Also, the increased RF characteristics have brought about the decreased output conductance for the InP-composite channel MHEMT. The cut-off frequency (fT) and the maximum oscillation frequency (fmax) for the InP-composite Channel MHEMT were 160 GHz and 230 GHz, respectively. It has been shown that the InP-composite channel MHEMT has the potential applications for the millimeter wave power device.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.42 no.5 s.335
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• pp.55-60
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• 2005

A V-band MIMIC quadruple subharmonic mixer is reported in this paper. The cascode harmonic generator is proposed for a high conversion gain. The proposed cascode harmonic generator is shown with a 4-th harmonic output characteristic that represents an average of 2.9 dB and a maximum of 4 dB higher than the conventional multiplier. The measured result of the subharmonic mixer has a conversion gain of 3_4 dB which a good conversion gain at a LO power of 13 dBm. Isolations of LO-to-IF and LO-to-RF were obtained -53.6 dB and -46.2 dB, respectively. The conversion gain of the subharmonic mixer in this study has a higher conversion gain compared with some other reports in millimeter-wave range.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.42 no.5 s.335
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• pp.61-68
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• 2005

In this paper, low conversion loss 94 GHz MIMIC resistive mixer was designed and fabricated. The $0.1{\mu}m$ InGaAs/InAlAs/GaAs Metamorphic HEMT, which is applicable to MIMIC's, was fabricated. The DC characteristics of MHEMT are 665 mA/mm of drain current density, 691 mS/mm of maximum transconductance. The current gain cut-off frequency(fT) is 189 GHz and the maximum oscillation frequency(fmax) is 334 GHz. A 94 GHz resistive mixer was fabricated using $0.1{\mu}m$ MHEMT MIMIC process. From the measurement, the conversion loss of the 94 GHz resistive mixer was 8.2 dB at an LO power of 10 dBm. P1 dB(1 dB compression point) of input and output were 9 dBm and 0 dBm, respectively. LO-RF isolations of resistive mixer was obtained 15.6 dB at 94.03 GHz. We obtained in this study a lower conversion loss compared to some other resistive mixers in W-band frequencies.

• Journal of Broadcast Engineering
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• v.12 no.1 s.34
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• pp.11-27
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• 2007

T-DMB(Terrestrial-Digital Multimedia Broadcasting) for portable and mobile broadcasting service was officially launched in the metropolitan area of Korea in December 2005. The development of interactive data services and the expansion of T-DMB network have been now progressed, and the regional T-DMB broadcasters will be selected in the near future. Although it is important to evaluate service area and reduce a fringe area for optimizing RF coverage of T-DMB, there was no professional system to support those works, and therefore lots of resources in budget, manpower and time were required. The measurement considering characteristics of SFN(Single Frequency Network) is essential in the implementation of T-DMB network which needs to control synchronization, spacing and output power of transmitters. In addition, mobile measurement, enough measured parameters for many-sided analysis of reception quality, efficient management of enormous measured data and representation of measured results on the electronic map are also important in evaluating service area. In this paper, we derived requirements for a new measurement system in T-DMB by considering the above details, and we proposed and developed an integrated measurement and analysis system. The developed system was applied to the implementation of T-DMB network of KBS and field tests, and it proved its efficiency and accuracy in result.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.28 no.10
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• pp.769-778
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• 2017

In this paper, a self-interference signal cancellation(SIC) circult for In-band Full-Duplex has been developed and tested in RF/analog region. By use of this SIC circuit, a FM two-way radio has been developed working at FRS(Family Radio Service) band. The two-way radio device is transmitting the FM modulated signal and demodulating the wanted FM signal at the same time. A circulator is used to enable a single antenna to transmit and receive simuultaenously. The receiver circuit needs to cancel out the self-interference signal due to the transmit signal. A vector modulator(VM) is used to control the phase and magnitude of the esitmated signal. And in-phase and quadrature correlators are used to figure out the optimal coefficients of the VM to remove the self-interference signal according to the change of channel environment. In this work, SA58646 has been used as the FM transceiver, and the system is tested with a frequency of 465 MHz and a bandwidth of 12.5 kHz FM signal. The output power is 17.2 dBm at the antenna port, and the self intererence signal level is measured -49.2 dBm at the receiver end. Therefore the SIC level is measured by 66.4 dB.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.344-344
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• 2014

Transparent amorphous oxide semiconductors such as a In-Ga-Zn-O (a-IGZO) have advantages for large area electronic devices; e.g., uniform deposition at a large area, optical transparency, a smooth surface, and large electron mobility >10 cm2/Vs, which is more than an order of magnitude larger than that of hydrogen amorphous silicon (a-Si;H).1) Thin film transistors (TFTs) that employ amorphous oxide semiconductors such as ZnO, In-Ga-Zn-O, or Hf-In-Zn-O (HIZO) are currently subject of intensive study owing to their high potential for application in flat panel displays. The device fabrication process involves a series of thin film deposition and photolithographic patterning steps. In order to minimize contamination, the substrates usually undergo a cleaning procedure using deionized water, before and after the growth of thin films by sputtering methods. The devices structure were fabricated top-contact gate TFTs using the a-IGZO films on the plastic substrates. The channel width and length were 80 and 20 um, respectively. The source and drain electrode regions were defined by photolithography and wet etching process. The electrodes consisting of Ti(15 nm)/Al(120 nm)/Ti(15nm) trilayers were deposited by direct current sputtering. The 30 nm thickness active IGZO layer deposited by rf magnetron sputtering at room temperature. The deposition condition is as follows: a rf power 200 W, a pressure of 5 mtorr, 10% of oxygen [O2/(O2+Ar)=0.1], and room temperature. A 9-nm-thick Al2O3 layer was formed as a first, third gate insulator by ALD deposition. A 290-nm-thick SS6908 organic dielectrics formed as second gate insulator by spin-coating. The schematic structure of the IGZO TFT is top gate contact geometry device structure for typical TFTs fabricated in this study. Drain current (IDS) versus drain-source voltage (VDS) output characteristics curve of a IGZO TFTs fabricated using the 3-layer gate insulator on a plastic substrate and log(IDS)-gate voltage (VG) characteristics for typical IGZO TFTs. The TFTs device has a channel width (W) of $80{\mu}m$ and a channel length (L) of $20{\mu}m$. The IDS-VDS curves showed well-defined transistor characteristics with saturation effects at VG>-10 V and VDS>-20 V for the inkjet printing IGZO device. The carrier charge mobility was determined to be 15.18 cm^2 V-1s-1 with FET threshold voltage of -3 V and on/off current ratio 10^9.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.11 no.6
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• pp.123-132
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• 2012

Gas sensors has been used very differently that depending on following purposes; Automotive (exhaust gas, fuel mixture gas, oxygen, particulates), agriculture / food industry (fresh, stored, CO2, humidity, NH3, nitrogen oxide gas, organic gas, toxic gas emitted from pesticides and insecticides), industrial / medical (chemical gas, hydrogen, oxygen and toxic gases), military (chemical weapon), environmental measurements (CO and other air pollution consisting of sulfur and nitrogen gas), residential (LNG, LPG, butane, indoor air, humidity). The types of industrial toxic substances are known about 700 species and many of these exist in gaseous form under normal conditions. he multi-gas detection sensors will be developed for casualties that detect the most important and find easy three kinds of gases in marine plant; carbon dioxide(CO2), carbon(CO), ammonia(NH3). Package block consists of gas sensing device minor ingredient, rf front end, zigbee chip. Develope interworking technology between the sensor and zigbee chip inside a package. Conduct a performance test through test jig about prototype zigbee sensor module with rf output power and unwanted emission test. This research task available early address when poisonous gas leaked from large industrial site and contribution for workers' safety at the enclosed space.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.239-240
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• 2012

With advancements in semiconductor device technologies, manufacturing processes are getting more complex and it became more difficult to maintain tighter process control. As the number of processing step increased for fabricating complex chip structure, potential fault inducing factors are prevail and their allowable margins are continuously reduced. Therefore, one of the key to success in semiconductor manufacturing is highly accurate and fast fault detection and classification at each stage to reduce any undesired variation and identify the cause of the fault. Sensors in the equipment are used to monitor the state of the process. The idea is that whenever there is a fault in the process, it appears as some variation in the output from any of the sensors monitoring the process. These sensors may refer to information about pressure, RF power or gas flow and etc. in the equipment. By relating the data from these sensors to the process condition, any abnormality in the process can be identified, but it still holds some degree of certainty. Our hypothesis in this research is to capture the features of equipment condition data from healthy process library. We can use the health data as a reference for upcoming processes and this is made possible by mathematically modeling of the acquired data. In this work we demonstrate the use of recurrent neural network (RNN) has been used. RNN is a dynamic neural network that makes the output as a function of previous inputs. In our case we have etch equipment tool set data, consisting of 22 parameters and 9 runs. This data was first synchronized using the Dynamic Time Warping (DTW) algorithm. The synchronized data from the sensors in the form of time series is then provided to RNN which trains and restructures itself according to the input and then predicts a value, one step ahead in time, which depends on the past values of data. Eight runs of process data were used to train the network, while in order to check the performance of the network, one run was used as a test input. Next, a mean squared error based probability generating function was used to assign probability of fault in each parameter by comparing the predicted and actual values of the data. In the future we will make use of the Bayesian Networks to classify the detected faults. Bayesian Networks use directed acyclic graphs that relate different parameters through their conditional dependencies in order to find inference among them. The relationships between parameters from the data will be used to generate the structure of Bayesian Network and then posterior probability of different faults will be calculated using inference algorithms.