• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.156-157
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• 2008

반도체 소자 회로의 집적도가 높아짐에 따라 선폭이 감소하였고 고온 공정이 필요하게 되었다. 기존의 반도체 회로 배선 재료인 Al을 사용할 경우 소자의 속도가 느려져서 소자의 신뢰도가 떨어지고 고온공정에서의 문제가 발생되어 이를 해결하기 위한 차세대 배선 물질로 비저항이 낮은 Cu의 사용이 요구되고 있다. 하지만 Cu는 Si와의 확산이 잘 일어나기 때문에 그 사이에서 확산을 막아주는 확산방지막에 대한 필요성이 제기되었고 연구가 활발히 진행되고 있다. 본 논문에서는 Cu와 Si사이의 확산을 방지하기 위한 W-C-N 확산방지막을 물리적 기상 증착법(PVD)중 하나인 RF Magnetron Sputtering 방식을 사용하여 증착하였다. 고온 공정에서의 안정성을 알아보기 위해 $600^{\circ}C$ 부터 $900^{\circ}C$ 까지 $100^{\circ}C$ 단위로 열처리를 하였고 4-point probe 장치를 사용하여 열처리 온도에 따른 비저항 측정을 통해 W-C-N 확산방지막의 특성을 분석하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.160-160
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• 2015

InGaZnO (IGZO) thin-film transistors (TFTs) are very promising due to their potential use in high performance display backplane [1]. However, the stability of IGZO TFTs under the various stresses has been issued for the practical IGZO applications [2]. Up to now, many researchers have studied to understand the sub-gap density of states (DOS) as the root cause of instability [3]. Nomura et al. reported that these deep defects are located in the surface layer of the IGZO channel [4]. Also, Kim et al. reported that the interfacial traps can be affected by different RF-power during RF magnetron sputtering process [5]. It is well known that these trap states can influence on the performances and stabilities of IGZO TFTs. Nevertheless, it has not been reported how these defect states are created during conventional RF magnetron sputtering. In general, during conventional RF magnetron sputtering process, negative oxygen ions (NOI) can be generated by electron attachment in oxygen atom near target surface and accelerated up to few hundreds eV by self-bias of RF magnetron sputter; the high energy bombardment of NOIs generates bulk defects in oxide thin films [6-10] and can change the defect states of IGZO thin film. In this study, we have confirmed that the NOIs accelerated by the self-bias were one of the dominant causes of instability in IGZO TFTs when the channel layer was deposited by conventional RF magnetron sputtering system. Finally, we will introduce our novel technology named as Magnetic Field Shielded Sputtering (MFSS) process [9-10] to eliminate the NOI bombardment effects and present how much to be improved the instability of IGZO TFTs by this new deposition method.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.466-468
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• 2012

Amorphous InGaZnO (${\alpha}$-IGZO) thin-film transistors (TFTs) are are very promising due to their potential use in thin film electronics and display drivers [1]. However, the stability of AOS-TFTs under the various stresses has been issued for the practical AOSs applications [2]. Up to now, many researchers have studied to understand the sub-gap density of states (DOS) as the root cause of instability [3]. Nomura et al. reported that these deep defects are located in the surface layer of the ${\alpha}$-IGZO channel [4]. Also, Kim et al. reported that the interfacial traps can be affected by different RF-power during RF magnetron sputtering process [5]. It is well known that these trap states can influence on the performances and stabilities of ${\alpha}$-IGZO TFTs. Nevertheless, it has not been reported how these defect states are created during conventional RF magnetron sputtering. In general, during conventional RF magnetron sputtering process, negative oxygen ions (NOI) can be generated by electron attachment in oxygen atom near target surface and accelerated up to few hundreds eV by self-bias of RF magnetron sputter; the high energy bombardment of NOIs generates bulk defects in oxide thin films [6-10] and can change the defect states of ${\alpha}$-IGZO thin film. In this paper, we have confirmed that the NOIs accelerated by the self-bias were one of the dominant causes of instability in ${\alpha}$-IGZO TFTs when the channel layer was deposited by conventional RF magnetron sputtering system. Finally, we will introduce our novel technology named as Magnetic Field Shielded Sputtering (MFSS) process [9-10] to eliminate the NOI bombardment effects and present how much to be improved the instability of ${\alpha}$-IGZO TFTs by this new deposition method.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2007년도 하계종합학술대회 논문집
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• pp.441-442
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• 2007

We deposited nickel oxide(NiO) thin films on silicon(Si) substrates at Room temperature and $500^{\circ}C$ using a nickel target by reactive DC and RF sputtering. In addition, we anneal to NiO thin films deposited at room temperature. Using spectroscopic eillipsometry, we obtained optical characteristics of every films. We discussed relations of the optical and structural properties of NiO thin films with the oxygen flow rate, substrate temperature and annealing temperatures. Refraction was decreased and defect was increased when NiO thin films was annealed. We also analyzed the electrical characteristics of NiO films which deposited DC and RF sputtering method.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.123-123
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• 2009

In our experiment, a PTFE was sputter-coated on substrates to induce water-repellent properties and the RF-magnetron sputtering method for fabrication of PTFE film is used due to the advantages of the simple process, time saving, environmentally friendly, insulating property, and a good adhesion property to substrates. As a result of the correlation between surface roughness of PTFE films and contact angle with water, we found that the roughness surfaces are proportioned to contact angles related to low interfacial energy.

• 한국세라믹학회지
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• 제31권8호
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• pp.886-892
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• 1994

Structural and electrical properties of BaTiO3 thin films deposited on Pt/SiO2/Si substrates by RF magnetron sputtering method have been investigated. Crystallization behavior and electrical properties were studied for the films deposited under various sputtering gas compositions (Ar+O2 gas mixture) and substrate temperatures. All the films deposited above 50$0^{\circ}C$ were all crystallized and their preferred orientation changed from (001) to (111) with the addition of oxygen gas. The dielectric constant of films deposited in pure argon was about 110 and showed little dependence on the substrate temperature. But that was increased as the ratio of O2/Ar increased and its substrate temperature dependence was discernible. The highest dielectric constant reached to 550. In addition, the films deposited in mixed gas showed stable dielectric properties against the frequency and temperature.

• 한국전기전자재료학회논문지
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• 제30권5호
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• pp.307-311
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• 2017

ZnO:Al thin films were deposited on glass substrate by RF magnetron sputtering followed by in situ heat treatment in the same chamber. Effects of in situ heat treatment on properties of ZnO:Al thin films were investigated in this study. As heat treatment temperature was increased, crystal quality was improved first and then it was deteriorated, surface roughness was decreased, and sheet resistance was also decreased. The decrease in sheet resistance was caused by increasing carrier concentration due to decreased surface roughness. The decrease in surface roughness resulted in increase of transmittance. Therefore, in situ heat treatment is an effective method for obtaining films with better electrical characteristics.

• 한국세라믹학회지
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• 제27권2호
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• pp.249-255
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• 1990

High Tc Supperconducting thin films were fabricated by rf magnetron sputtering method. We have successfully controlled the compositions of films by adding sintered CuO pellets on YBa2Cu3O7-x single target. High Tc thin films with large grian size and good crystal habit were obtained by rapid thermal annealing process. The films deposited on SrTiO3(100) single crystal substrate indicated the existence of c-axis prefered orientation confirmed by XRD and SEM analysis. The Tc, zero's of sharp resistive transition for rapid annealed films deposited on polycrystalline YSZ substrate and on SrTiO3(100) single crystal substrate were 79K and 88K, respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.329.1-329.1
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• 2014

In this paper, we report electrical, optical and structural properties of Al-doped zinc oxide (AZO) thin films deposited at different substrate temperatures and pressures. The films were prepared by radio frequency (RF) magnetron sputtering on glass substrates in argon (Ar) ambient. The X-ray diffraction analysis showed that the AZO films deposited at room temperature (RT) and 20 Pa were mostly oriented along a-axis with preferred orientation along (100) direction. There was an improvement in resistivity ($3.7{\times}10^{-3}{\Omega}-cm$) transmittance (95%) at constant substrate temperature (RT) and working pressure (20 Pa) using the Hall-effect measurement system and UV-vis spectroscopy, respectively. Our results have promising applications in low-cost transparent electronics, such as the thin-film solar cells and thin-film transistors due to favourable deposition conditions. Furthermore our film deposition method offers a procedure for preparing highly oriented (100) AZO films.

• 센서학회지
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• 제15권1호
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• pp.71-75
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• 2006

ITO (Indium Tin Oxide) thin films have been fabricated by rf magnetron sputtering with a target of a mixture $In_{2}O_{3]$(90 wt%) and $SnO_{2}$ (10 wt%). ITO films were sputtered with substrate temperature from 30 to $300^{\circ}C$ and working pressure from 1 to under 0.1 m Torr. ITO thin films surface morphology and electrical properties analyzed by SEM Photographs, and X-ray diffractions patterns. The resistivity of ITO thin films was $1.8{\times}10^{-5}{\Omega}/cm$.