• E2M - 전기 전자와 첨단 소재
• /
• 제8권1호
• /
• pp.6-12
• /
• 1995

High Tc superconducting YBa$_{2}$Cu$_{3}$$O_{7-x}$ thin films were prepared on various substrates by off-axis rf magnetron sputtering method to examine the substrate effects on the film structure and its R-T characteristics. The SEM analysis showed that the surface morphology of the grown YBa$_{2}$Cu$_{3}$O.sub 7-x/, film has different characteristic structure with different substrate used. The film on (100) SrTiO$_{3}$ substrate has critical current density of 3*10$^{5}$ A/cm$^{2}$ at 77K under zero magnetic field. The X-ray diffraction measurements revealed that the films on (100) SrTiO$_{3}$ substrate have mixed a-axis and c-axis normal to the substrate surface and the films on (100) MgO and ZrO$_{2}$/sapphire substrates have c-axis normal orientation to the substrate surface. However, YBa$_{2}$Cu$_{3}$$O_{7-x}$ films on (100) sapphire substrates showed no preferential orientation.ion.

• 한국전기전자재료학회논문지
• /
• 제18권2호
• /
• pp.159-163
• /
• 2005

This paper gives characterization of ZnO thin film deposited by RF magnetron sputtering method, which is concerned in deposition process and device fabrication process, to fabricate solidly mounted resonator(SMR)-type film bulk acoustic resonator(FBAR). A piezoelectric layer of 1.1${\mu}{\textrm}{m}$ thick ZnO thin films were grown on thermally oxidized SiO$_2$(3000 $\AA$)/Si substrate layers by RF magnetron sputtering at the room temperature. The highly c-axis oriented ZnO thin film was obtained at the conditions of 265 W of RF power, 10 mtorr of working pressure, and 50/50 of Ar/O$_2$ gas ratio. The piezoelectric-active area was 50 ${\mu}{\textrm}{m}$${\times}$50${\mu}{\textrm}{m}$, and the thickness of ZnO film and Al-3 % Cu electrode were 1.4 ${\mu}{\textrm}{m}$ and 180${\mu}{\textrm}{m}$, respectively. Its series and parallel frequencies appeared at 2.128 and 2.151 GHz, respectively, and the qualify factor of the resonator was as high as 401.8$\pm$8.5.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
• /
• pp.329-332
• /
• 1999

In this paper, BST((Bao.&o,dTi0:3) thin films were deposited by the rf magnetron sputtering method on Pt/$SiO_2$/Si substrate. Pt, $RuO_2$, Ag, Cu films for the formation of top electrode were deposited on BST thm films. And then Top Electrodes/BST/Pt capacitors were annealed with rapid thermal annealing(RTA) at various temperature. We have investigated effect of post-annealing on the electrical properties such as dielectric constant and leakage current of the capacitors. It was found that electrical properties of the capacitors were greatly depended on the annealing temperatures as well as the materials of top electrodes. In BST thin films with Pt top electrode was annealed at $700^{\circ}C$. the dielectric constant was measured to the value of 346 at l[kHzl and the leakage current was obtained to the value of $8.76\times10^8$[A/$\textrm{cm}^2$] at the forward bias of 2[V].

• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제52권7호
• /
• pp.288-292
• /
• 2003

AlM thin film has been deposited on A1$_2$O$_3$ substrate by reactive radio frequency(RF) magnetron sputtering method under various operating conditions such as working pressure, fraction of nitrogen partial pressure, and substrate temperature. Scanning Electron Microscope(SEM), X-ray Diffraction(XRD), and Atomic Force Microscope(AFM) have been measured to find out structural properties and preferred orientation of AlN thin films. SAW velocity of IDTs/AlN/Si structure was about 5038［㎧］ at the center frequency of 251.9［MHz］ and insertion loss was measured to be relatively low value of 35.6［dB］. SAW velocity of IDTs/AlN/A1$_2$O$_3$ structure was improved to be about 5960［㎧］ at the center frequency of 296.7［MHz］.

• 한국정밀공학회지
• /
• 제26권9호
• /
• pp.121-126
• /
• 2009

Stainless steel 316L (STS 316L) is widely used as a material of biopsy needle. However it has a side effect that tissue can be damaged by electrochemical operation between tissue and STS 316L. Many studies have been made on the ceramic coating of biopsy needle to reduce the side effect. In this study, STS 316L was coated with three bioceramics, $Al_2O_3$, $SiO_2$ and $ZrO_2$ using a RF magnetron sputtering method. The effects of ceramic coating on the electrical conductivity and coating strength of ceramic-coated STS 316L were investigated. The results showed that the electrical conductivity of ceramic-coated STS 316L was much lower than that of uncoated STS 316L. The coating strength of $ZrO_2$-coated STS 316L was 30% and 70% higher, respectively than those of $Al_2O_3$-coated STS 316L and $SiO_2_3$-coated STS 316L.

• 한국전기전자재료학회논문지
• /
• 제19권7호
• /
• pp.624-630
• /
• 2006

ZnO deposition parameters are not independent and have a nonlinear and complex property. To propose a method that could verify and predict the relations of process variables, neural network was used. At first, ZnO thin films were deposited by using RF magnetron sputtering process with various conditions. Si, GaAs, and Glass were used as substrates. The temperature, work pressure, and RF power of the substrate were $50\sim500^{\circ}C$, 15 mTorr, and $180\sim210W$, respectively : the purity of the target was ZnO 4 N. Structural properties of ZnO thin films were estimated by using XRD (0002) peak intensity. The structure of neural network was a form of 4-7-1 that have one hidden layer. In training a network, learning rate and momentum were selected as 0.2, 0.6 respectively. A backpropagation neural network were performed with XRD (0002) peak data. After training a network, the temperature of substrate was evaluated as the most important parameter by sensitivity analysis and response surface. As a result, neural network could capture nonlinear and complex relationships between process parameters and predict structural properties of ZnO thin films with a limited set of experiments.

• 한국결정학회:학술대회논문집
• /
• 한국결정학회 2007년도 추계학술연구발표회 및 정기총회
• /
• pp.33-33
• /
• 2007

• 한국세라믹학회:학술대회논문집
• /
• 한국세라믹학회 2003년도 춘계총회 및 연구발표회 초록집
• /
• pp.143.2-143
• /
• 2003

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2006년도 제30회 학술논문발표회 초록집
• /
• pp.136-136
• /
• 2006

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2011년도 춘계학술발표대회
• /
• pp.64.2-64.2
• /
• 2011

Recently, Silicon Germanium (SiGe) alloys have been received considerable attention for their great potentials in advanced electronic and optoelectronic devices. Especially, microcrystalline SiGe is a good channel material for thin film transistor due to its advantages such as narrow and variable band gap and process compatibility with Si based integrated circuits. In this work, microcrystalline silicon-germanium films (${\mu}c$-SiGe) were deposited by DC/RF magnetron co-sputtering method using Si and Ge target on Corning glass substrates. The film composition was controlled by changing DC and RF powers applied to each target. The substrate temperatures were changed from $100^{\circ}C$ to $450^{\circ}C$. The microstructure of the thin films was analyzed by x-ray diffraction (XRD) and Raman spectroscopy. The analysis results showed that the crystallinity of the films enhances with increasing Ge mole fraction. Also, crystallization temperature was reduced to $300^{\circ}C$ with $H_2$ dilution. Hall measurements indicated that the electrical properties were improved by Ge alloying.