• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.136.1-136.1
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• 2015

In the present study, UHF (320 MHz) in combination with RF (13.56 MHz) plasmas was used for the synthesis of hydrogenated silicon nitride (SiNx:H) films by PECVD process at low temperature. RF/UHF hybrid plasmas were maintained at a fixed pressure of 410 mTorr in the N2/SiH4 and N2/SiH4/NH3 atmospheres. To investigate the radical generation and plasma formation and their control for the growth of the film, plasma diagnostic tools like vacuum ultraviolet absorption spectroscopy (VUVAS), optical emission spectroscopy (OES), and RF compensated Langmuir probe (LP) were utilized. Utilization of RF/UHF hybrid plasmas enables very high plasma densities ~ 1011 cm-3 with low electron temperature. Measurements using VUVAS reveal the UHF source is quite effective in the dissociation of the N2 gas to generate more active atomic N. It results in the enhancement of the Si-N bond concentration in the film. Consequently, the deposition rate has been significantly improved up to 2nm/s for the high rate synthesis of highly transparent (up to 90 %) SiNx:H film. The films properties such as optical transmittance and chemical composition are investigated using different analysis tools.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.5
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• pp.351-354
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• 2013

Thin-film transistors(TFTs) with silicon-zinc-tin-oxide(SiZnSnO, SZTO) channel layer are fabricated by rf sputtering method. Electrical properties were changed by different annealing treatment of dry annealing and wet annealing. This procedure improves electrical property especially, stability of oxide TFT. Improved electrical properties are ascribed to desorption of the negatively charged oxygen species from the surfaces by annealing treatment. The threshold voltage ($V_{th}$) shifted toward positive as increasing Si contents in SZTO system. Because the Si has a lower standard electrode potential (SEP) than that that of Sn, Zn, resulting in the degeneration of the oxygen vacancy ($V_O$). As a result, the Si acts as carrier suppressor and oxygen binder in the SZTO as well as a $V_{th}$ controller, resulting in the enhancement of stability of TFTs.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.8
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• pp.1968-1973
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• 2013

We present the enhancement of narrowband modulation response of an optical source by integrating a dual-electrode distributed feedback (DFB) laser with an electro-absorption modulator (EAM). The dual-electrode DFB laser exhibits a multiple optical modes owing to a self-pulsation in GHz range. By modulating the laser and modulator sections of the integrated device simultaneously, 20-dB of narrowband modulation response enhancement at 6 GHz with 7-GHz tuning range has been observed.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.131-131
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• 2000

We witnessed the enhancement of mangetoresistance (MR) in La0.75Ca0.25MnO3 thin films grown on Si (100) substrates by RF magnetron sputtering. The films are polycrystalline with (100) and (110) orientations. The lattice constants of films are reduced as much as 0.9% compared to the one of the bulk sample, which proves that the compressive stress on films was imposed by Si sbustrate. It is found that the MR value (Δ$\rho$/$\rho$0) of films are 0.33, 0.29 and 0.27 under a magnetic field of 1.5T for each films with deposition temperature of $700^{\circ}C$, 75$0^{\circ}C$ and 80$0^{\circ}C$, respectively. The correlation between the MR values and lattice constants of films is discussed. It is concluded that the compressive stress on films cause the enhancement of MR values of thin films grown on Si (1000 substrates. Some mechanism of compressive stress induced by Si substrate is suggested.

• The Korean Journal of Physiology
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• v.24 no.2
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• pp.305-317
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• 1990

The present study was performed to investigate modification in the electrophysiological characteristics of cat dorsal horn cells during neurogenic inflammation induced by mustard oil. The results obtained were summarized as follows: 1) Following subcutaneous injection of mustard oil the majority of wide dynamic range (WDR) cells (10/15 units) showed enhanced responses (80%) to brush, while the responses to all types of mechanical stiumli were enhanced in 3/15 units. One cell was further activated by pinch and the another was not affected at all after induction of inflammation. 2) The sensitization of WDR cell was resulted from subcutaneous injection of mustard oil either inside or outside of the receptive field (RF), whereas the spontaneous activity increased only after mustard oil was injected inside of the RF. 3) In the animal with inflammation the responses of high threshold (HT) cell to noxious stimulus were not altered, while HT cell responded to such mechanical stimulus as pressure which was usually ineffective in normal animals. 4) After induction of inflammation, low threshold (LT) cell appeared to be converted to WDR cell, showing responses not only to brush but also to pressure and pinch. 5) The mustard oil-induced inflammation enhanced responses of WDR and HT cells to the thermal stimuli and also resulted in a pronounced after-discharge in WDR cells. 6) After subcutaneous injection of lidocaine, the increased background activity of WDR cells due to inflammation was almost completely abolished. 7) A subcutaneous injection of mustard oil inside of the RF invariably desensitized the dorsal horn cells which receive sensory inputs from the inflamed RF. From the results of Present study it was revealed that a neurogenic inflammation induced by mustard oil resulted in an enhancement of responses of cat dorsal horn cells to mechanical and thermal stimuli.

• Journal of the Korean Magnetics Society
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• v.2 no.1
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• pp.61-68
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• 1992

Structural, magnetic and magneto-optical(1.0~3.2eV) properties of rare earth (Ce, Pr, Eu), transition metal(Ni, Co), and Al substituted polycrystalline Ba ferrite films grown by rf sputtering have been investigated. TEM studies revealed that crystal grains in the films were reduced in size from several hundred nm to the order of 1 nm with the decrease of rf power density during sputtering. By substituting Al, square hysteresis loops have successfully been obtained. It has been found that Niions strongly enhances Faraday rotation of the films in the visible range. It has been confirmed that Co ions also strongly enhances Faraday rotation of the films in the near infrared. En- hancement in Faraday rotation by Ce, Pr, and Eu ions has not been observed. The origin of the enhancement in magnetic and magneto-optical properties of the films is discussed.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.1
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• pp.61-68
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• 2007

Interfacial fracture energy(${\Gamma}$) between $Al_2O_3$ thin film deposited by Atomic Layer Deposition(ALD) and sputter deposited Cu electrode for embedded PCB applications is measured from a $90^{\circ}$ peel test. While the interfacial fracture energy of $Cu/Al_2O_3$ is very poor, Cr adhesion layer increases the interfacial fracture energy to $39.8{\pm}3.2g/mm\;for\;Ar^+$ RF plasma power density of $0.123W/cm^2$, which seems to come from the enhancement of the mechanical interlocking and Cr-O chemical bonding effects.

• Journal of Biomedical Engineering Research
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• v.18 no.3
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• pp.243-251
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• 1997

In this paper, we have reported two interesting flow effects arising in the TRFGE sequence using water flow phantom. First, we have shown that the TRFGE sequence is indeed not affected by "in-flow" effect from the unsaturated spins flowing into the imaging slice. Second, the enhancement of "in-plane flow" signal in the readout gradient direction was observed when the TRFGE sequence was used without flow compensation. These two results have many interesting applications in MR imaging other than fMRI. Results obtained were also compared with the results obtained by the conventional gradient echo(CGE) imaging. Experiments were performed at 4.7T MRI/S animal system (Biospec, BRUKER, Switzerland). A cylindrical phantom was made using acryl and a vinyl tube was inserted at the center(Fig. 1). The whole cylinder was filled with water doped with $MnCl_2$ and the center tube was filled with saline which flows in parallel to the main magnetic field along the tube. Tailored RF pulse was designed to have quadratic ($z^2$) phase distribution in slice direction(z). Imaging parameters were TR/TE = 55~85/10msec, flip angle = $30^{\circ}$, slice thickness = 2mm, matrix size = 256${\times}$256, and FOV= 10cm. In-flow effect : Axial images were obtained with and without flow using the CGE and TRFGE sequences, respectively. The flow direction was perpendicular to the image slice. In-plane flow : Sagittal images were obtained with and without flow using the TRGE sequence. The readout gradient was applied in parallel to the flow direction. We have observed that the "in-flow" effect did not affect the TRFGE image, while "in-plane flow" running along the readout gradient direction enhanced the signal in the TRFGE sequence when flow compensation gradient scheme was not used.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.295-295
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• 2016

Recently, TCO films with low carrier concentration, high mobility and high work function are proposed beneficial as front electrode in HIT solar cell due to free-carrier absorption in NIR wavelength region and low Schottky barrier height in the front TCO/a-Si:H(p) interface. We report high transmittance and work function zirconium-doped indium tin oxide (ITO:Zr) films with various plasma (Ar/O2 and Ar) conditions. The role of (Ar/O2) plasma was to enhance the work function of the ITO:Zr films whereas the pure Ar plasma based ITO:Zr showed good electrical properties. The RF magnetron sputtered ITO:Zr films with low resistivity and high transmittance were employed as front electrode in HIT solar cells, yield the best performance of 18.15% with an open-circuit voltage of 710 eV and current density of 34.63 mA/cm2. The high work function ITO:Zr films can be used to modify the front barrier height of HIT solar cell.

• Applied Science and Convergence Technology
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• v.25 no.4
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• pp.73-76
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• 2016

Multi-layer films of $SiN_x/SiO_x$/InSnO with anti-reflective effect were grown by new-concept plasma enhanced chemical vapor deposition system (PECVD) with hybrid plasma source (HPS). Anti-reflective effect of $SiN_x/SiO_x$/InSnO was investigated as a function of ratio of $SiN_x$ and $SiO_x$ thickness. Multi-layers deposited by PECVD with HPS represents the enhancement of anti-reflective effect with high transmittance, comparing to the layers by conventional radio frequency (RF) sputtering system. This change is strongly related to the optical and physical properties of each layer, such as refractive index, composition, film density, and surface roughness depending on the deposition system.