• Journal of the Korean Vacuum Society
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• v.16 no.6
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• pp.446-452
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• 2007

[ $(Pb_{1.1},La_{0.08})(Zr_{0.65}.Ti_{0.35})O_3$ ] thin films on the $Pt/Ti/SiO_2/Si$, $TiO_2(interlayer)/Pt/Ti/SiO_2/Si$ substrate were fabricated by the R.F. magnetron-sputtering method and considered their characteristics depending on $TiO_2$ interlayer. Changing the deposition conditions of $TiO_2$ interlayer, we obtained $TiO_2$ anatase single phase and rutile single phase. PLZT was deposited on these substrates and analyzed by x-ray diffraction(XRD) for there crystallinity and orientation. To investigate $PLZT-TiO_2$, $TiO_2-Pt$ interface, glow discharge spectrometer(GDS) analysis was carried out and we performed electrical measurements for dielectric properties of PLZT thin films. The PLZT thin film on $TiO_2$ anatase interlayer was found to have (110)-preferred orientation and 12.6 ${\mu}C/cm^2$ remaining polarization value.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.221-221
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• 2014

The present work proposes an improved numerical simulator for design and modification of large area capacitively coupled plasma (CCP) processing chamber. CCP, as notoriously well-known, demands the tremendously huge computational cost for carrying out transient analyses in realistic multi-dimensional models, because electron dissociations take place in a much smaller time scale (${\Delta}t{\approx}10-8{\sim}10-10$) than time scale of those happened between neutrals (${\Delta}t{\approx}10-1{\sim}10-3$), due to the rf drive frequencies of external electric field. And also, for spatial discretization of electron flux (Je), exponential scheme such as Scharfetter-Gummel method needs to be used in order to alleviate the numerical stiffness and resolve exponential change of spatial distribution of electron temperature (Te) and electron number density (Ne) in the vicinity of electrodes. Due to such computational intractability, it is prohibited to simulate CCP deposition in a three-dimension within acceptable calculation runtimes (<24 h). Under the situation where process conditions require thickness non-uniformity below 5%, however, detailed flow features of reactive gases induced from three-dimensional geometric effects such as gas distribution through the perforated plates (showerhead) should be considered. Without considering plasma chemistry, we therefore simulated flow, temperature and species fields in three-dimensional geometry first, and then, based on that data, boundary conditions of two-dimensional plasma discharge model are set. In the particular case of SiH4-NH3-N2-He CCP discharge to produce deposition of SiNxHy thin film, a cylindrical showerhead electrode reactor was studied by numerical modeling of mass, momentum and energy transports for charged particles in an axi-symmetric geometry. By solving transport equations of electron and radicals simultaneously, we observed that the way how source gases are consumed in the non-isothermal flow field and such consequences on active species production were outlined as playing the leading parts in the processes. As an example of application of the model for the prediction of the deposited thickness uniformity in a 300 mm wafer plasma processing chamber, the results were compared with the experimentally measured deposition profiles along the radius of the wafer varying inter-electrode gap. The simulation results were in good agreement with experimental data.

• Korean Journal of Materials Research
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• v.19 no.2
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• pp.73-78
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• 2009

This study investigated the dependence of the various sputtering conditions (Ar pressure: $2{\sim}10\;mTorr$, Power: $50{\sim}150\;W$) and thickness ($50{\sim}1200\;nm$) of Si thin film on the electrochemical properties, microstructural properties and the capacity fading of a Si thin film anode. A Si layer and a Ti buffer layer were deposited on Copper foil by RF-magnetron sputtering. At 10 mTorr, the 50 W sample showed the best capacity of 3323 mAh/g, while the 100 W sample showed the best capacity retention of 91.7%, also at 10 mTorr. The initial capacities and capacity retention in the samples apart from the 50W sample at 10 mTorr were enhanced as the Ar pressure and power increased. This was considered to be related to the change of the microstructure and the surface morphology by various sputtering conditions. In addition, thinner Si film anodes showed better cycling performance. This phenomenon is caused by the structural stress and peeling off of the Si layer by the high volume change of Si during the charge/discharge process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.7
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• pp.595-601
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• 2009

For the silicon oxide $(SiO_x)$ films prepared by using the facing target sputtering (FTS) apparatus that was manufactured to enhance the preciseness of the fabricated thin-film and sputtering yield rate by forming a higher-density plasma in the electrical discharge space for using it as a thin-film passivation system for flexible organic light emitting devices (FOLEDs). The deposition characteristics were investigated under various process conditions, such as array of the cathode magnets, oxygen concentration$(O_2/Ar+O_2)$ introduced during deposition, and variations of distance between two targets and working pressure. We report that the optimum conditions for our FTS apparatus for the deposition of the $SiO_x$ films are as follows: $d_{TS}\;and\;d_{TT}$ are 90mm and 120mm, respectively and the maximum deposition rate is obtained under a gas pressure of 2 mTorr with an oxygen concentration of 3.3%. Under this optimum conditions, it was found that the $SiO_x$ film was grown with a very high deposition rate of $250{\AA}$/min by rf-power of $4.4W/cm^2$, which was significantly enhanced as compared with a deposition rate (${\sim}55{\AA})$/min) of the conventional sputtering system. We also reported that the FTS system is a suitable method for the high speed and the low temperature deposition, the plasma free deposition, and the mass-production.

• Korean Journal of Optics and Photonics
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• v.15 no.6
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• pp.569-574
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• 2004

We stabilized the frequency and power of a CW radio-frequency-excited $CO_2$ laser on the peak of the Doppler broadened gain curve using the photoacoustic effect generated from the laser itself. The condenser microphone is installed in the radio frequency discharge chamber to detect a photoacoustic signal. The photoacoustic signal is fed to a lock-in stabilizer as a reference signal for stabilization. The frequency stability is estimated to be better then 5.4${\times}$10$^{-8}$ at the P(20) line. The stabilized output variation was reduced 9.3%, compared to 100% for a free running laser.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.209-209
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• 1999

현재 magnetron sputter는 반도체, LCD 등을 포함하는 microelectronics 산업에서 박막형성을 위한 주요 장비로 널리 쓰이고 있으며, 소자의 고집적화 및 대형화 추세에 따라 그 이용가치는 더욱 증대되고 있다. 본 연구엣는 TFT-LCD용 Color Filter 제조시 ITO박막형성을 위해 사용하는 magnetron sputter 내부의 플라즈마 분포 및 ion kinetic energy에 대한 해석을 실시하였으며, ITO target의 erosion 형상의 원인을 실험결과와 비교하였다. Magnetron sputtering은 target에 가해지는 bias 전압(DC 혹은 RF)에 의해 target과 shield 혹은 target과 substrate 사이에서 생성될 수 잇는 플라즈마를 target 및 부분에 붙어있는 영구자석을 이용하여 target 근처에 집중시키고, target 표면과 플라즈마 사이의 전위차에 의해 가속된 이온들이 target 표면과 충돌하여 이차 전자방출을 일으킴과 동시에 target 표면에서 sputtering을 일으키고, 이들 sputtered 된 중성의 atom 들이 substrate로 날아가 박막을 형성하는 원리로 작동된다. 이때 target에서 방출되는 이차전자들은 영구자석에 의한 자기장 효과에 의해 target 근처에 갇히게 되어 중성 기체분자들과 이온화반응을 통해 플라즈마를 유지하고 그 밀도를 높혀주는 역할을 담당하게 된다. 즉 낮은 압력 및 bias 전압에서도 플라즈마 밀도를 높일수 있고 sputtering 공정이 가능한 장점을 가지고 있다. Magnetron sputtering 현상에 대한 시뮬레이션은 크게 magnetron discharge와 sputtering에 대한 해석 두가지로 나누어 볼 수 있는데, sputtering 현상 자체를 수치묘사할 수 있는 정량적인 모델은 아직까지 명확하게 정립되어 있지 않다. 따라서 본 연구에서는 magnetron plasma 자체에 대한 수치해석에 주안점을 두고 아울러 bulk plasma 영역에서 target으로 입사하는 이온들의 입사에너지 및 입사각도 등을 Monte Carlo 방법으로 추적하여 sputtering 현상을 유추해보았다. Sputtering 현상을 살펴보기 위해 magnetron sputter 내 플라즈마 밀도, 전자온도, 특히 target 및 substrate를 충돌하는 이온의 입사에너지 및 입사각 분포등을 계산하는데 hybrid 방법으로 시뮬레이션을 하였다. 즉 ion과 bulk electron에 대해서는 fluid 방식으로 접근하고, 이차전자 운동과 그로 인한 반응관계 및 target으로 입사하는 이온의 에너지와 입사각 분포는 Monte-Carlo 방법으로 처리하였다. 정지기장해석의 경우 상용 S/W인 Vector Fields를 사용하였다. 이를 통해 sputter 내 플라즈마 특성, target으로 입사하는 이온에너지 및 각 분포, 이들이 target erosion 형상에 미치는 영향을 살펴보았다. 또한 이들 결과로부터 간단한 sputtering 모델을 사용하여 target으로부터 sputter된 입자들이 substrate에 부착되는 현상을 Monte-Carlo 방법으로 추적하여 성막특성도 살펴보았다.

• Journal of Yeungnam Medical Science
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• v.27 no.1
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• pp.78-84
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• 2010

Adult-onset Still's disease (AOSD) is an inflammatory disorder that's characterized by daily, spiking high fever, arthritis and an evanescent, salmon-pink rash. AOSD is diagnosed purely on the basis of the typical clinical features of the illness. The symptoms commonly include swelling of the lymph nodes, enlargement of the spleen and liver, and a sore throat. AOSD is difficult to differentiate from systemic lupus erythematosus (SLE) due to the similar clinical manifestations. We report here on a case of a 16-year-old female patient with autism and epilepsy and who complained of daily spiking fever for 20 days. The patient had maculopapular skin rashes on the face and whole body and lymphadenopathy. The liver function tests were elevated mildly. The initial rheumatoid factor (RF) and antinuclear antibody (ANA) tests were negative. We diagnosed her as having adult-onset Still's disease according to the criteria of Yamaguchi. We successfully treated her with oral prednisolone. But her antinuclear antibody test was changed to positive after discharge. So we finally diagnosed her as having SLE.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.6
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• pp.255-261
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• 2005

Recently, the RF inductive discharge or inductively coupled plasma continues to attract growing attention as an effective plasma source in many industrial applications, the best known of which are plasma processing and lighting technology. To the point of lighting sources, the ring-shaped electrodeless fluorescent lamps utilizing an inductively coupled plasma have been objects of interest and research during the last decades, mainly because of their potential for extremely long life, high lamp efficacies, rapid power switching response. In this paper, maxwell 3D finite element analysis program (Ansoft) was used to obtain electromagnetic properties associated with the coil and nearby structures. The electromagnetic emitting properties were presented by 3D simulation software operated at 250 kHz and some specific conditions. The electromagnetic field in the ferrite core was shown to be high and symmetric. An LS-100 luminance meter and a Darsa-2000 spectrum analyzer were used in the experiment. According to data on the lamp tested using high magnetic field ferrite, the optical and thermal wave fields were shown to be high around the ring-shaped electrodeless fluorescent lamp. The optical or light field was high at the center of the bulb rather than around the ferrite core. The light conditions of the bulb were assumed to be complex, depending on the condition of the filler gas, the volume of the bulb, and the frequency of the inverter. Our results have shown coupling between the gas plasma and the field of the light emitted to be nonlinear.

• Journal of the Korean Ceramic Society
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• v.35 no.8
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• pp.813-818
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• 1998

A simple method to measure the elastic modulus E and Poisson's ratio v of diamod-like carbon (DLC) films deposited on Si wafer was suggested. Using the anisotropic etching technique of Si we could make the edge of DLC overhang free from constraint of Si substrate. DLC film is chemically so inert that we could not on-serve any surface damage after the etching process. The edge of DLC overhang free from constraint of Si substrate exhibited periodic sinusoidal shape. By measuring the amplitude and the wavelength of the sinu-soidal edge we could determine the stain of the film required to adhere to the substrate. Since the residual stress of film can be determine independently by measurement of the curvature of film-substrate com-posite we could calculated the biaxial elastic modulus E/(1-v) using stress-strain relation of thin films. By comparing the biaxial elastic modulus with the plane-strain modulus E/(1-{{{{ { v}^{2 } }}) measured by nano-in-dentation we could further determine the elastic modulus and Poisson's ratio independently. This method was employed to measure the mechanical properties of DLC films deposited by {{{{ { {C }_{6 }H }_{6 } }} rf glow discharge. The was elastic modulus E increased from 94 to 169 GPa as the {{{{ { V}_{ b} / SQRT { P} }} increased from 127 to 221 V/{{{{ {mTorr }^{1/2 } }} Poisson's ratio was estimated to be abou 0.16∼0.22 in this {{{{ { V}_{ b} / SQRT { P} }} range. For the {{{{ { V}_{ b} / SQRT { P} }} less than 127V/{{{{ {mTorr }^{1/2 } }} where the plastic deformation can occur by the substrate etching process however the present method could not be applied.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.164-165
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• 2005

The dry etch characteristics of GaAs over both AlGaAs and InGaP in planar inductively coupled $BCl_3$-based plasmas(ICP) with additions of $SF_6$ or $CF_4$ were studied. The additions of flourine gases provided enhanced etch selectivities of GaAs/AlGaAs and GaAs/InGaP. The etch stop reaction involving formation of involatile $AlF_3$ and $InF_3$ (boiling points of etch products: $AlF_3\sim1300^{\circ}C$, $InF_3$ > $1200^{\circ}C$ at atmosphere) were found to be effective under high density inductively coupled plasma condition. Decrease of etch rates of all materials was probably due to strong increase of flourine atoms in the discharge, which blocked the surface of the material against chlorine neutral adsorption. The process parameters were ICP source power (0 - 500 W), RF chuck power (0 - 30 W) and variable gas composition. The process results were characterized in terms of etch rate, selectivities of GaAs over AlGaAs and InGaP, surface morphology, surface roughness and residues after etching.