• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.3
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• pp.416-423
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• 2012

Using Ansoft HFSS(High Frequency Structure Simulator) and Serenade(circuit simulator), multilayer LPF and RF diode switch for GSM were designed. Diodes were transformed the inductor and capacitor in Tx and Rx for the simulation of equivalent circuit, respectively. In particular, the design of the simulation for multilayer RF diode switch was carried out with considering the variance of device and contraction percentage.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.45 no.11
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• pp.55-60
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• 2008

This paper proposed a dual-band RF switch using a Composite Right/Left Handed transmission line(CRLH TL) and PIN diode. RF switch is usually consist of $\lambda/4$ Right Handed transmission line(RH TL) and PIN diode. The dual band characteristics of RF switch was achieved by using CRLH transmission line instead of RH transmission line. CRLH Open-Stub was designed for resolve to reduction of isolation due to Package Inductance of PIN diode. The proposed RF switch was designed at GSM and DCS frequency-band. The measurement results showed a good agreement with theoretical result.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.652-655
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• 2004

RF MEMS is a miniature device or an array of integration devices and mechanical components and fabricated with If batch-processing techniques. RF MEMS application area are in phased arrays and reconfigurable apertures for defence and telecommunication systems, switching network for satellite communication, and single-pole double throw switches for wireless application. Recently, RF MEMS switches have been developed for the application to the milimeter wave system. RF MEMS switches offer a substantilly higher performance than PM diode or FET switches. In this paper, SPDT(single-pole-double-throw) switch are designed to use 10 GHz. Actuation voltage and displacement are simulated by tool. And stress and distribution are simulated.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.7
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• pp.791-796
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• 2012

A RF limiter is a component to protect the receiver front end from undesired signal. A RF limiter is a key component whose output is constant level for all inputs above a critical value. A RF limiter use a diode to pass signals of low power while attenuating those above some threshold. A RF limiter for receiver protection in modern radar systems is playing a vital role in order to meet challenges of new interference threats and complicated electromagnetic environments. This paper proposed a new circuit for high power RF limiter whose structure is the combination of the PIN diode and Limit diode. PIN diode take a use of its isolation characteristics which act as a switch does. A 2 kW RF limiter with 200 us pulse width at S-band was developed. It shows good agreements between estimated value and measured results.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.4 s.119
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• pp.364-371
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• 2007

In this paper, the design and implementation of high-power PIN diode switch modules and high-speed switch driver circuits are presented for Wibro base stations. To prevent isolation degradation due to parasitic inductances of conventional packaged PIN diodes and to improve power handling capabilities of the switch modules, bare diode chips are used and carefully placed in a PCB layout, which makes bonding wire inductances to be absorbed in the impedance of a transmission line. The switch module is designed and implemented to have a maximum performance while using a minimum number of the diodes. It shows an insertion loss of ${\sim}0.84\;dB$ and isolation of 80 dB or more at 2.35 GHz. The switch driver circuit is also fabricated and measured to have a switching speed of ${\sim}200\;nsec$. The power handling capability test demonstrates that the module operates normally even under a digitally modulated 70 W RF signal stress.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.422-423
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• 2005

RF Micro switches is a miniature device or an array of integration devices and mechanical components and fabricated with Ie batch-processing techniques. RF Micro switches application area are in phased arrays and reconfigurable apertures for defence and telecommunication systems, switching network for satellite communication, and single-pole double throw switches for wireless application. Recently, RF Micro switches have been developed for the application to the milimeter wave system. RF Micro switches offer a substantilly higher performance than PIN diode or FET switches. In this paper, SPDT(single-pole-double-throw) switch are designed to use 10 GHz. Actuation voltage and displacement are simulated by tool.

• Proceedings of the Korean Institute of Communication Sciences Conference
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• 2006.07a
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• pp.577-577
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• 2006

• Proceedings of the KIEE Conference
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• 1996.07a
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• pp.556-558
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• 1996

PLS 2-GeV linac has 11 sets of high power klystron-modulator system as a main RF source for the beam acceleration. The modulators can provide 200-MW peak pulsed power(400-kV, 500-A) with a pulse width of $7.5{\mu}s$(ESW), a maximum pulse repetition rate of 120-Hz at the full power level. The DC power supply provides a 25-kV, 7-Adc and the charging system consists of a charging inductor, charging capacitor, and the diode for reverse current protection. The charged PFN voltage by a LC resonant charging method has two times of the DC high voltage and the pulsed power is delivered to the load by a thyratron switch. To reduced the press of high voltage lit thyratron switch, the command charging is the best method. In this article, the high voltage switch for the command charging method is tested to the start work and the system is presented with the experiment results of the trigger and operational characteristics.

• ETRI Journal
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• v.41 no.6
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• pp.715-730
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• 2019

We propose a switched beam-forming antenna that satisfies not only ultra-wideband characteristics but also beam-forming in the WLAN frequency band using an ultra-wideband antenna and passive parasitic elements applying a broadband optimal reactance load algorithm. We design a power and phase estimation function and an error correction function by re-analyzing and normalizing all the components of the parasitic array using control system engineering. The proposed antenna is compared with an antenna with a pin diode and reactance load value, respectively. The pin diode is located between the passive parasitic elements and ground plane. An antenna beam can be formed in eight directions according to the pin diode ON (reflector)/OFF (director) state. The antenna with a reactance load value achieves a better VSWR and gain than the antenna with a pin diode. We confirm that a beam is formed in eight directions owing to the RF switch operation, and the measured peak gain is 7 dBi at 2.45 GHz and 10 dBi at 5.8 GHz.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.9
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• pp.1633-1640
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• 2016

In this paper, we propose a open-ended rectangular microstirp patch antenna with fork-shaped feeding structure. This antenna extends the effective bandwidth by transforming single or multi resonant frequency and is designed planar monopole structure with microstrip line to satisfy the WLAN bands (2.4 - 2.484, 5.15 - 5.35, 5.25-5.825 GHz). The substrate is printed in 0.8 mm thickness on an FR-4 board. A commercial 3D simulation tool was used to analyze surface current and electromagnetic field distribution in order to analyze the operation mode and reconfiguration principle of antenna. According to the lengths of individual patches, simulated reflection loss was compared to obtain optimized values. When it was designed with the optimized values, it satisfied WLAN bands (2.380 - 2.710, 4.900 - 5.950 GHz), if the switch is off, and 2.4 WLAN band (2.380 - 2.710 GHz). From the fabricated and measured results, measured results of return loss, gain and radiation patterns characteristics displayed for operating bands.