• Fashion & Textile Research Journal
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• v.16 no.3
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• pp.456-461
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• 2014

The objective of this study is to give PP(polypropylene) fabric a good affinity for water. Oxygen plasma was treated to PP fabrics in a commercial glow discharge reactor with different RF power, discharge pressure, and reaction time. The PP fiber surfaces were characterized by the measurement of contact angle and ESCA. A JEOL scanning electron microscope was used to observe the surface morphology of fibers. The spontaneous water uptake amount of PP fabrics was determined by the demand wettability test. To determine the effect of aging on the surface properties of $O_2$ plasma treated PP, all the above measurements of the samples were carried out after 1, 7, 30, 60, and 150 days. The results are as follows. The PP fiber surfaces treated by $O_2$ plasma treatment have a chemical composition that consisted of various oxygen containing polar groups. Consequently, the contact angles of the treated PP fibers decreased, which improved the water uptake rate of PP fabrics. Surface roughness of the treated PP affected the fabric wettabiity as well. Wettability of the treated PP decreased and leveled off with aging. The $O_2$ plasma treatment is a simple and effective method to increase the water uptake rate of PP fabrics.

• Textile Coloration and Finishing
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• v.16 no.5
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• pp.28-34
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• 2004

The polarizing film application exploits the unique physicochemical properties between PVA(Poly vinyl alcohol) film and CTA(Cellulose triacetate) film. However, hardly any research was aimed at improving the adhesion characteristics of the CTA film by radio frequency(RF) plasma treatment at argon(Ar) gaseous state. In this report, we deal with surface treatment technology for protective CTA film developed specifically for high adhesion applications. After Ar plasma, surface of the films is analyzed by atomic force microscopy(AFM), roughness parameter and peel strength. Furthermore, the wetting properties of the CTA film were studied by contact angle analysis. Results obtained for CTA films treated with a glow discharge showed that this technique is sensitive to newly created physical functions. The roughness and peel strength value increased with an increase in treatment time for initial treatment, but showed decreasing trend for continuous treatment time. The result of contact angle measurement refer that the hydrophilicity of surface was increased. AFM studies indicated that no considerable change of surface morphology occurred up to 3 minutes of treatment time, but a considerable uneven of surface structure resulted from treating time after 5 minutes.

• Journal of the Korean Society of Visualization
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• v.19 no.3
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• pp.123-129
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• 2021

Many plants and animals in nature have superhydrophobic surfaces. This superhydrophobic surface has various properties such as self-cleaning, moisture collection, and anti-icing. In this study, the superhydrophobic properties of PTFE surface were treated by plasma etching. There were four important factors that changed the surface properties. Micro-sized protrusions were formed by plasma etching. The most influential parameter was RF Power. The contact angle of the pristine PTFE surface was about 113.8°. The maximum contact angle of the surface after plasma treatment with optimized parameters was about 168.1°. In this case, the sliding angle was quite small about 1°. These properties made it possible to remove droplets easily from the surface. To verify the self-cleaning effect of the surface, graphite was used to contaminate the surface and remove it with water droplets. Graphite particles were easily removed from the optimized surface compared to the pristine surface. As a result, a surface having water repellency and self-cleaning effects could be produced with optimized plasma etching parameters.

• Polymer(Korea)
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• v.29 no.6
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• pp.581-587
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• 2005

Commercial polyurethane film (PU) was modified with Ar plasma ionized in dielectric barrier discharge (DBD) plate-type reactor under atmospheric pressure. We measured the change of the contact angle and the surface fee energy with respect to the plasma treatment conditions such as treatment time, RF-power, and Ar gas flow rate. We also optimized the plasma treatment conditions to maximize the surface peroxide concentration. At the plasma treatment time of 70 sec, the power of 120 W and the Ar gas flow rate of 5 liter per minute (LPM), the best wettability and the highest surface fee energy were obtained. The 1,1 diphenyl-2-picrylhydrazyl (DPPH) method confirmed that the surface peroxide concentration was about 2.1 nmol/$\cm^{2}$ at 80 W, 30 sec, 6 LPM.

• Journal of the Semiconductor & Display Technology
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• v.17 no.4
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• pp.66-69
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• 2018

This study was researched the electrical properties of semiconductor devices such as ITO, $SiO_2$, $V_2O_5$ thin films. The films of ITO, $SiO_2$, $V_2O_5$ were deposited by the rf magnetron sputtering system with mixed gases of oxygen and argon to generate the plasma. All samples were cleaned before deposition and prepared the metal electrodes to research the current-voltage properties. The electrical characteristics of semiconductors depends on the interface's properties at the junction. There are two kinds of junctions such as ohmic and schottky contacts in the semiconductors. In this study, the ITO thin film was shown the ohmic contact properties as the linear current-voltage curves, and the electrical characteristics of $SiO_2$ and $V_2O_5$ films were shown the non-linear current-voltage curves as the schottky contacts. It was confirmed that the electronic system with schottky contacts enhanced the electronic flow owing to the increment of efficiency and increased the conductivity. The schottky contact was only defined special characteristics at the semiconductor and the interface depletion layer at the junction made the schottky contact which has the effect of leakage current cutoff. Consequently the semiconductor device with shottky contact increased the electronic current flow, in spite of depletion of carriers.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.179-179
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• 2016

A radio-frequency (RF) Inductively Coupled Plasma (ICP) torch system was used for boron-nitride nano-tube (BNNT) synthesis. Because of electrodeless plasma generation, no electrode pollution and effective heating transfer during nano-material synthesis can be realized. For stable plasma generation, argon and nitrogen gases were injected with 60 kW grid power in the difference pressure from 200 Torr to 630 Torr. Varying hydrogen gas flow rate from 0 to 20 slpm, the electrical and optical plasma properties were investigated. Through the spectroscopic analysis of atomic argon line, hydrogen line and nitrogen molecular band, we investigated the plasma electron excitation temperature, gas temperature and electron density. Based on the plasma characterization, we performed the synthesis of BNNT by inserting 0.5~1 um hexagonal-boron nitride (h-BN) powder into the plasma. We analysis the structure characterization of BNNT by SEM (Scanning Electron Microscopy) and TEM (Transmission Electron Microscopy), also grasp the ingredient of BNNT by EELS (Electron Energy Loss Spectroscopy) and Raman spectroscopy. We treated bundles of BNNT with the atmospheric pressure plasma, so that we grow the surface morphology in the water attachment of BNNT. We reduce the advancing contact angle to purity bundles of BNNT.

• Applied Chemistry for Engineering
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• v.9 no.3
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• pp.383-387
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• 1998

The effect of hydrophilic surface modification of low density polyethylene(LDPE) byt the plasma gas($O_2$, $N_2$, and $O_2/N_2$) was investigated from the point of view of the functionalities of the generated LDPE surfaces and the contact angle. By virtue of x-ray photoelectron spectra(XPS) and attenuated total reflectance(FT-IR ATR) analysis, the LDPE surfaces treated with plasma were generated with oxygen functionalities of carbonyl, carboxyl, and the like, nitrogen functionalities by nitrogen plasma and mixing of nitrogen and oxygen plasma treatment were identified with. It was found that nitrogen plasma treatment showed with minimum value at contact angle for rf-power and treatment time, we had obtained optimum condition for hydrophilic surface modification at composite parameter, [(W/FM)t] 520~550GJs/kg.

• Journal of the Korean Vacuum Society
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• v.16 no.6
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• pp.439-445
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• 2007

SiGe integrated circuits are being used in the field of high-speed wire/wireless communications and microwave systems due to the RF/high-speed analog characteristics and the easiness in the fabrication. Reducing the resistance variation in SiGe thin film resistors results in enhancing the reliability of integrated circuits. In this paper, we investigate the causes that generate the resistance nonuniformity after the silicon-based thin film resistor was fabricated, and consider the counter plan against that. Because the Ti-B precipitate, which formed during the silicide process of the SiGe thin film resistor, gives rise to the nonuniformity of SiGe resistors, the boron ions should be implanted as many as possible. In addition, the resistance deviation increases as the size of the contact hole that interconnects the SiGe resistor and the metal line decreases. Therefore, the size of the contact hole must be enlarged in order to reduce the resistance deviation.

• Korean Chemical Engineering Research
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• v.47 no.1
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• pp.59-64
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• 2009

This study investigated the surface characteristics of polylactic acid (PLA) film after one atmospheric pressure plasma treatment. We used de-ionized water and diiodomethane as polar and non-polar solvents, respectively, for measuring contact angles, and subsequently calculated the surface free energy of PLA film. The contact angle and free energy of PLA surface were optimized at the treatment time of 30 sec, RF-power of 70 W, Ar gas flow rate of 6 lpm and air exposure time of 5 min. We analyzed the change of chemical functional groups on the surface of PLA film through XPS and were able to observe the change of polar functional groups such as -C=O, -CO, -COO on the surface of PLA film after one atmospheric pressure plasma treatment.

• Journal of the Korean Vacuum Society
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• v.12 no.4
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• pp.218-227
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• 2003

Pd/Si/Ti/Pt and Pd/Si/Pd/Ti/Au ohmic contacts to n-type InCaAs were investigated for applications to AlGaAs/GaAs HBT emitter ohmic contacts. In the Pd/Si/Ti/Pt ohmic contact, as-deposited contact showed non-ohmic behavior, and high specific contact resistivity of $5\times10^{-3}\Omega\textrm{cm}^2$ was achieved by rapid thermal annealing at $375^{\circ}C$/10 sec. However, the specific contact resistivity decreased remarkably to $2\times10^{-6}\Omega\textrm{cm}^2$ by annealing at $425^{\circ}C$/10sec. In the Pd/Si/Pd/Ti/Au ohmic contact, minimum specific contact resistivity of $3.9\times10^{-7}\Omega\textrm{cm}^2$ was achieved by annealing at $400^{\circ}C$/20sec. In both ohmic contacts, low contact resistivity and non-spiking planar interface between ohmic materials and InGaAs were maintained. Therefore, these thermally stable ohmic contact systems are promising candidates for compound semiconductor devices. RF performance of the AlGaAs/GaAs HBT was also examined by employing the Pd/Si/Ti/Pt and Pd/Si/Pd/Ti/Au systems as emitter ohmic contacts. Cutoff frequencies were 63.9 ㎓ and 74.4 ㎓, respectively, and maximum oscillation frequencies were 50.1 ㎓ and 52.5 ㎓, respectively. It shows very successful high frequency operations.