• Title/Summary/Keyword: RF components

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Investigation of phenol phormaldehyde-based photoresist at an initial stage of destruction in $O_2$ and $N_2O$ radiofrequency discharges

  • Shutov, D.A.;Kang, Seung-Youl;Baek, Kyu-Ha;Suh, Kyung-Soo;Min, Nam-Ki;Kwon, Kwang-Ho
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.214-215
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    • 2007
  • Etch rates and surface chemistry of phenol formaldehyde-based photoresist after short time $O_2\;and\;N_2O$ radio frequency (RF) plasma treatment depending on exposure time were investigated. It was found that the etch rate of photoresist sharply increased after discharge turn on and reached a limit with increase in plasma exposure time in both gases. X-ray photoelectron spectroscopy (XPS) analysis showed that the surface chemical structure become nearly constant after the treatment of 15 sec. Concentration of surface oxygen-containing groups after processing both in oxygen and in $N_2O$ plasmas is similar.

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Properties of ZnO:Al thin films prepared by a single target sputtering

  • An, Ilsin;Ahn, You-Shin;Taeg, Lim-Won
    • Journal of Korean Vacuum Science & Technology
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    • v.2 no.2
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    • pp.78-84
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    • 1998
  • ZnO:Al films were prepared by an rf magnetron sputtering and targets for the experiments were fabricated by sintering the mixture of ZnO and Al2O3. The most conductive film was obtained from the target with 2.0∼2.2 wt.% of Al2O3. Optical properties studied with spectroscopic ellipsometry showed band gap widening, i.e., the Burstein-Moss shift, with aluminum doping as well as with the elevation of deposition temperature. And it is found that the optical and electrical properties were related to the density of states as well as the variation of donor level. when hydrogen atoms were introduced into the films, the activation energy for the generation of oxygen vacancy was smaller for the films showing higher conductivity. This indicates that the optimum deposition condition for highly conductive ZnO:Al film has strong relation to the optimum doping condition.

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A VHF Band 4 Channel Phase Discriminator (VHF 대역 4채널 위상 판별기)

  • Park, Beom-Jun;Lee, Jeong-Hoon;Lee, Kyu-Song
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.25 no.9
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    • pp.912-918
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    • 2014
  • In this paper, a VHF band multi channel phase discriminator for direction finding equipment using tripple baseline interferometer technique is proposed. In order to measure simultaneously phase difference between IF(Intermediate Frequency) signals of the direction finding equipment, phase discriminator was designed to have parallel structure with multi channel, the phase correlator of phase discriminator was designed with I, Q mixer for reducing number of components. And digital LUT(Look Up Table) was applied for compensating error of phase discriminator due to phase unbalance of RF components. The measured phase accuracy of fabricated phase discriminator was 2 degree RMS(Root Mean Square) at 30 dB SNR condition, which is superior to the phase accuracy of conventional product.

A Low Loss and Short-wavelength Transmission Line Employing Inverted Periodically Arrayed Capacitive Devices and Its Application to Miniaturized Passive Components on MMIC (저손실·단파장 특성을 가지는 반전된 형태의 주기적 용량성 선로구조와 MMIC상의 초소형 수동소자 개발에의 응용)

  • Yun, Young
    • Journal of Advanced Marine Engineering and Technology
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    • v.36 no.1
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    • pp.149-156
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    • 2012
  • In this study, we propose a novel transmission line employing inverted PACD (Periodically Arrayed Capacitive Devices) for application to a development of miniaturized passive components on MMIC. The novel microstrip line employing Inverted PACD structure showed a loss much lower than conventional microstrip line. Using the inverted PACD structure, we fabricated a miniaturized impedance transformer on MMIC. the size of the impedance transformer was 0.012 $mm^2$, which is only 1.7% of conventional one. The impedance transformer showed good RF performances in a frequency range of 2.25~6.5 GHz.

60GHz band RF transceiver of the broadband point-to-point communication system (광대역 점대점 통신시스템용의 60GHz 대역 무선 송수신기)

  • Choi, Jae-Ha;Yoo, Young-Geun
    • Journal of the Institute of Convergence Signal Processing
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    • v.13 no.1
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    • pp.39-43
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    • 2012
  • 60GHz band RF transceiver was made with the NRD waveguide structure for the point- to-point communication. A dielectric line that of comprising NRD waveguide was the milling process was not easy because a material gets soft, and also compression and expansion according to a temperature were serious, so this line was not suitable for the device in which the resonance characteristic was important. In addition, the thing for comprising amplification module was difficult in the NRD waveguide structure. In this paper, a way in which to overcome mentioned in upper part, the transceiver was made by below technology. Components in which the resonance characteristic was not important were made with the NRD waveguide hybrid IC, and components in which the resonance characteristic was important were made with waveguide. An amplifier packaged and modularizing the bare chip, it equipped at the NRD waveguide within. Manufactured transceiver communicated with FDD method, and it had 10dBm output power, and -60dBm minimum receive sensitivity.

Component analysis of cultivated ginseng and mountain ginseng to the change of ginsenoside components in the process of heating and fermentation. (열처리 및 발효과정이 인삼 및 산양삼의 ginsenoside 함량에 미치는 영향)

  • Cha, Bae-Cheon;Yoon, Hye-Chul;Lee, Dae-Ho;Park, Jae-Seuk;Kwon, Ki-Rok
    • Journal of Pharmacopuncture
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    • v.13 no.2
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    • pp.33-49
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    • 2010
  • Objectives: The aim of this experiment is to provide an objective differentiation of cultivated ginseng, mountain ginseng through component analysis, and to know the change of gin senoside components in the process of heating and fermentation Methods: Comparative analyses of ginsenoside $Rb_1$, $Rb_2$, Rc, Rd, Re, Rf, $Rg_1$, $Rg_3$, $Rh_1$, and $Rh_2$, from the cultivated ginseng 4 and 6 years, and mountain cultivated ginseng were conducted using HPLC (High Performance Liquid Chromatography, hereafter HPLC). And the same analyses were conducted in the process of heating and fermentation using mixed Lactobacillus rhamnosus, Lactobacillus plantarum, Bifidobacterium lactis for 7 days. Results: The change of ginsenosides to the process of red ginseng and fermentation, cultivated ginseng and mountain cultivated ginseng were showed another results. Mountain ginseng showed a lot of change compared with cultivated ginsengs. In the 7 days of fermentation, mountain ginseng showed that ginsenoside $Rg_1$, $Rb_1$, $Rb_2$, Rc, and Rd were decreased and increased ginsenoside Re, Rf, $Rg_3$ and $Rh_1$ were increased compared with cultivated ginseng Conclusions: It seemed that ginsenosides of mountain cultivated ginseng was better resolved than cultivated ginseng because the difference of structure or distribution of ginsenosides in the condition of fermentation.

Crystal-less clock synthesizer with automatic clock compensation for BLE smart tag applications (자동 클럭 보정 기능을 갖춘 크리스털리스 클럭 합성기 설계 )

  • Jihun Kim;Ho-won Kim;Kang-yoon Lee
    • Transactions on Semiconductor Engineering
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    • v.2 no.3
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    • pp.1-5
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    • 2024
  • This paper presents a crystal-less reference clock recovery (CR) frequency synthesizer with compensation designed for Bluetooth Low Energy (BLE) Smart-tag applications, operating at frequencies of 32, 72, and 80MHz. In contrast to conventional frequency synthesizers, the proposed design eliminates the need for external components. Using a single-ended antenna to receive a minimal input power of -36dBm at a 2.4GHz signal, the CR synthesizes frequencies by processing the RF signal received through a Low Noise Amplifier ( L N A ) . This approach allows the system to generate a reference clock without relying on a crystal. The received signal is amplified by the LNA and then input to a 16-bit ACC (Automatic Clock Compensation) circuit. The ACC compares the frequency of the received signal with the oscillator output signal, using the synthesis of a 32MHz reference clock through a frequency compensation method. The oscillator is constructed using a Ring Oscillator (RO) with a Frequency Divider, offering three different frequencies (32/72/80MHz) for various system components. The proposed frequency synthesizer is implemented using a 55-nm CMOS process.

Characteristic study on the chemical components of Korean curved ginseng products

  • Cho, Chang-Won;Kim, Young-Chan;Kang, Jin-Hee;Rhee, Young Kyoung;Choi, Sang Yoon;Kim, Kyung-Tack;Lee, Young-Chul;Hong, Hee-Do
    • Journal of Ginseng Research
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    • v.37 no.3
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    • pp.349-354
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    • 2013
  • Dried ginseng (DG) is in fact the representing ginseng product in the worldwide market. Although it is made in various packages depending on the processing method, size and age of DG, basic scientific data reporting the chemical components are limited. In this study, 4-year-old curved ginseng (CG), one of the domestic DG products, was selected for further investigation. Eighty-six samples of 30 and 50 piece-grade CG, which are the most widely distributed in the market, were collected for 5 yr. Their major components, such as moisture, total sugar, acidic polysaccharides, total phenolic compounds, and saponins, were analyzed to figure out the standard quality characteristics. The moisture content of all CG samples was less than 15%. The total water-soluble sugar contents were 22.9% to 47.8% and 23.2% to 49.5% in the 30 and 50 piece-grade CG, respectively. The acidic polysaccharide contents were 3.6% to 6.7% and 2.9% to 6.9% in the 30 and 50 piece-grade CG, respectively. The total phenolic compound content was 0.4% to 0.5% in CG, regardless of the piece-grade. The crude saponin content, which represents the active component of ginseng, was over 2% in all samples. In 30 piece-grade CG samples, the contents of major ginsenosides, Rb1, Rf, and Rg1, were 2.2 to 4.7 mg/g, 0.4 to 1.3 mg/g, and 1.6 to 4.0 mg/g, respectively. The ginsenoside contents in 50 piece-grade CG samples were 2.1 to 3.9 mg/g (Rb1), 0.5 to 1.2 mg/g (Rf), and 1.3 to 3.4 mg/g (Rg1). Overall, since there were relatively high standard deviation and coefficient of variation in all the chemical component contents that were assessed, we found some difficulties in showing the CG standard chemical component characteristics by average, standard deviation, and other statistical analysis factors.

Voltage-Controlled Artificial Transmission Line Employing Periodically Loaded Diodes for Application to On-Chip Matching Components on MMIC (MMIC용 온칩 정합 소자에의 응용을 위한 주기적 배열 다이오드 구조를 이용한 전압 제어형 전송 선로)

  • Yun, Young
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.19 no.1
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    • pp.7-14
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    • 2008
  • In this paper, we propose VATL(Voltage-controlled Artificial Transmission Line) employing periodically loaded diodes for application to on-chip matching components on MMIC. Compared with conventional microstrip line, the VATL showed a much shorter wave length due to periodic capacitance of diodes, and the characteristic impedance of the VATL was easily controlled bγ changing supplied voltage. Concretely, the characteristic impedance of the VATL was changed from $80{\sim}20{\Omega}$ in a range of $0{\sim}1.05V$ and the VATL showed a wavelength of 1.5mm at 20GHz, while conventional microstrip line showed a wavelength of 5.3mm at the same frequency. Using the VATL, a ${\lambda}/4$ impedance transformer was fabricated on GaAs MMIC for application to on-chip matching components on MMIC. Using the ${\lambda}/4$ impedance transformer made it possible to perform impedance matching between RF components with various characteristic impedance of $30{\sim}100{\Omega}$ by adjusting applied Voltage.

Structural and Electrical Properties of Amorphous 2Ti4O12 Thin Films Grown on TiN Substrate (TiN 기판 위에 성장시킨 비정질 BaSm2Ti4O12 박막의 구조 및 전기적 특성 연구)

  • Park, Yong-Jun;Paik, Jong-Hoo;Lee, Young-Jin;Jeong, Young-Hun;Nahm, Sahn
    • Korean Journal of Materials Research
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    • v.18 no.4
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    • pp.169-174
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    • 2008
  • The structural and electrical properties of amorphous $BaSm_2Ti_4O_{12}$ (BSmT) films on a $TiN/SiO_2/Si$ substrate deposited using a RF magnetron sputtering method were investigated. The deposition of BSmT films was carried out at $300^{\circ}C$ in a mixed oxygen and argon ($O_2$ : Ar = 1 : 4) atmosphere with a total pressure of 8.0 mTorr. In particular, a 45 nm-thick amorphous BSmT film exhibited a high capacitance density and low dissipation factor of $7.60\;fF/{\mu}m2$ and 1.3%, respectively, with a dielectric constant of 38 at 100 kHz. Its capacitance showed very little change, even in GHz ranges from 1.0 GHz to 6.0 GHz. The quality factor of the BSmT film was as high as 67 at 6 GHz. The leakage current density of the BSmT film was also very low, at approximately $5.11\;nA/cm^2$ at 2 V; its conduction mechanism was explained by the the Poole-Frenkel emission. The quadratic voltage coefficient of capacitance of the BSmT film was approximately $698\;ppm/V^2$, which is higher than the required value (<$100\;ppm/V^2$) for RF application. This could be reduced by improving the process condition. The temperature coefficient of capacitance of the film was low at nearly $296\;ppm/^{\circ}C$ at 100 kHz. Therefore, amorphous BSmT grown on a TiN substrate is a viable candidate material for a metal-insulator-metal capacitor.