• E2M - 전기 전자와 첨단 소재
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• 제10권9호
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• pp.869-875
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• 1997

Bi based superconducting thin films were fabricated by 4-target RF magnetron sputtering using the method of controlling the on-off time. These thin films showed better crystal structures. The ratio of Cu/Bi decreased but the critical temperature increased with increasing the temperature of the substrate. High temperature phase low temperature of the substrate. High temperature phase low temperature phase and semiconducting phase can be formed by controlling the on-off time of the shutter respectively.

• Transactions on Electrical and Electronic Materials
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• 제11권1호
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• pp.29-32
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• 2010

In this study, transparent and conductive Al-doped zinc oxide (AZO) films were prepared on a glass substrate by an radio frequency (RF) magnetron sputtering method using a 150-nm-thick AZO target (Al: 2 wt.%) at room temperature. We investigated the effects of RF power between 100-350 W (in steps of 50 W) on the structural, electrical, and optical properties of the AZO films. The thickness and cross-sectional images of the films were observed by field emission scanning electron microscopy. The thicknesses of all films were kept constant at 150 nm and grown on a glass substrate. The grain sizes of the AZO films were determined with the X-ray diffraction by using the Scherrer' equation, and their electrical properties were investigated using a Hall effect electronic transport measurement system. The transmittance of the AZO films was also measured by an ultraviolet-visible spectrometer.

• E2M - 전기 전자와 첨단 소재
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• 제8권1호
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• pp.77-82
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• 1995

PTCR(Positive Temperature Coefficient of Resistivity) thermistor in thin film BaTiO$_{3}$ system was prepared by using radio frequency(13.56 MHz) and DC magnetron sputter equipment. Polycrystalline, surface structure, and R-T(Resistivity-Temperature) characteristics of the specimens were measured by X-ray diffraction(D-Max3, Rigaku, Japan), SEM(Scanning Electron Microscopy: M.JSM84 01, Japan), and insulation resistance measuring system (Keithley 719), respectively. Thin films characteristics of the thermistor showed different properties depending on the substrate even with the same sputtering condition. The thin film formed on the A1$_{2}$O$_{3}$ substrate showed a good crystalline and a low resistivity at below curie point. However, the thin films prepared on slide glass and Si wafer were amorphous. The thicknesses of the three samples prepared under the same process conditions were 700[.angs.], 637.75[.angs.], and 715[.angs.], respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.135-135
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• 2010

본 연구에서는 ZnO를 기반으로 하여 $In_2O_3$, $Ga_2O_3$를 혼합한 IGZO 박막의 물성들을 분석하였다. 광학적 특성 결과 가시광 영역에서 모두 80%이상의 투과율을 나타내었으며, 전기적 특성을 조사한 결과 $In_2O_3:Ga_2O_3$:ZnO (1:9:90 wt.%)의 IGZO박막에서 $1.90{\times}10^{-3}\;\Omega/cm$의 비저항을 확인 할 수 있었다. 또한 상온에서 $400^{\circ}C$로 기판온도에 변화를 주어 실험하였으며, 결정성을 분석하기 위하여 XRD (PANALYTICAL CO.)를 사용하였고, SEM (JEOL CO.) 을 이용하여 IGZO박막의 미세 구조를 확인하였다. UV-ViS spectrophotometer (SHIMADZU CO.) 을 사용하여 광학적 특성을 측정하였으며, Hall effect측정 장비를 이용하여 캐리어 농도 및 Hall이동도 변화에 따른 비저항을 비교 분석하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.97-98
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• 2005

To investigate the ZnO thin films which is interested in the next generation of short wavelength LEDs and Lasers, our ZnO thin films were deposited by RF sputtering system. Phosphorus (P) and arsenic (As) were diffused into about 2.1${\mu}m$ ZnO thin films sputtered by RF magnetron sputtering system mn ampoule tube which was below $5\times10^{-7}$ Torr. The dopant sources of phosphorus and arsenic were $Zn_3P_2$ and $ZnAs_2$. Those diffusion was perform at 500, 600, and 700$^{\circ}C$ during 3hr. We find the condition of p-type ZnO whose diffusion condition is 700$^{\circ}C$, 3hr Our p-type ZnO thin film has not only very high carrier concentration of above $10^{19}/cm^3$ but also low resistivity of $5\times10^{-3}{\Omega}cm$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 춘계학술대회 논문집
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• pp.3-5
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• 2008

The $SrBi_2Ta_2O_9$ thin films are deposited on Pt-coated electrode(Pt/$TiO_2/SiO_2$/Si) using RF magnetron sputtering method. The ferroelectric properties of SBT capacitors with annealing temperatures were studied. Through the x-ray diffraction analysis and the scanning electron microscopy (SEM), it could be observed that crystallization of the SBT thin film started around $650^{\circ}C$ and complete crystallization was accomplished around $750^{\circ}C$ and grains grew from a small spheric form to rod-like. For the leakage current density of the SBT capacitor depending upon various annealing atmospheres, capacitor annealed in the oxygen atmosphere showed the most excellent characteristic, and they were respectively about $2.13\times10^{-9}[A/cm^2]$ at 5V and 340.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2008년도 추계학술대회 초록집
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• pp.15-16
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• 2008

In case manufacturing COF, through hole should be made to be used for a pathway connecting the conductive layers of its both faces. In case Cu-plating inside of through hole with electroless plating way, contact between Cu and PI film gets bad to be fell apart from PI by the impact of applying to the electric devices. Therefore, after sputtering is applying on inner through hole, then a method to perform electroplating process. In this study, after changing sputtering condition to manufacture FCCL, we looked the changeability of the upper PI and inner hole Cu layers. Making use of RF Magnetron sputtering equipment, we coated Cu thin film and Cu-plated on it through electroplating. After cold-mounting the completed FCCL, we examined hole section through an optical microscope. From the result of test, with parameters deposition pressure and deposition time, both the thickness of the hole plated layer and PI plated upper layer increased at regular rate, increasing the thickness of Cu sputter layer. However, from the result of test in increasing RF-power, we could know the increment rate of hole plated layer is considerably greater than that of PI plated upper layer. Therefore, we finally acquired good result; if you want only to increase the plated layer of inner hole, it's much better to increase RF-power.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 제4회 영호남학술대회 논문집
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• pp.73-79
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• 2002

This study evaporates ZnO layer thickness' differently with RF sputtering method on Si Wafer(n-100). This study is performed to examine the characteristics of photon energy and dielectric loss according to the thickness of ZnO and increase the reliability and reproduction of ZnO thin film. It is confirmed that the variation of electric Permittivity by frequency is resulted from the formation of particles within thin film, the particle size and the polarization on grain boundary. Peak of electric Permittivity value of thin film has slower and less value in early low wavelength by the coulomb force involved in carrier combination according to the increase of frequency. Reversal of electric Permittivity values is induced by dipole polarization shown in the dielectric of thin film. Complex electric constant $({\varepsilon}_1,{\varepsilon}_2)$ has larger peak values as it's thickness is thinner and then it is larger according to the increase of frequency. Electric Permittivity by photon energy has large value in imaginary number and is reduced exponentially by the increase of carrier density according to that of photon energy.

• 한국자기학회지
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• 제16권2호
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• pp.140-143
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• 2006

단결정 상태의 $CoFe_2O_4$ 박막을 rf magnetron sputtering 증착법을 이용하여 (100) MgO 기판 위에 성장시켰다. X선 회절기, Rutherford back-scattering 분석기와 고감도 주사전자현미경을 이용하여 측정한 결과 증착된 박막이 기판과 잘 정렬되어 성장한 것을 확인할 수 있었다. $600^{\circ}C$의 기판 온도에서 성장한 페라이트 박막은 약 200nm크기의 사각형 형태로 규칙적으로 분포되어 있음이 관찰되었다. 그러나 $700^{\circ}C$의 기판 온도에서 성장한 박막은 불규칙한 모양으로 이루어져 있었으며 30nm에서 150nm에 이르는 다양한 입자 크기를 보이고 있었다. 섭동자화기를 이용한 자기이력곡선 측정 결과 성장한 박막의 자화용이축이 기판과 수직하게 배열하는 것을 알 수 있었다. 또한 MgO 기판과 성장 박막과의 격자상수 차이로 인하여 기판과 수직한 방향의 보자력은 매우 큰 값을 나타내었다. 즉 평행한 방향의 보자력은 283 Oe이고 수직한 방향의 보자력은 6800 Oe였다. $700^{\circ}C$의 기판 온도에 서 성장한 페라이트 박막은 $600^{\circ}C$의 기판 온도에서 성장한 박막의 보자력 및 포화자화 값과 유사한 값을 보였으나 각형비는 급격하게 감소하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.447-447
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• 2009

In this study, transparent and conductive Al-doped zinc oxide (AZO) films were prepared on Corning glass and silicon wafer substrate by RF magnetron sputtering method using an Al-doped ZnO target (Al: 2 wt.%) at room temperature as the thickness of 150 nm. We investigated the effects of the RF power between 100 Wand 350 W in steps of 50 W on structural, electrical and optical properties of AZO films. Also, we studied the effects of the working pressure (3, 4 and 5 mtorr) on that condition. The thickness and cross-sectional images of films were observed by field emission scanning electron microscopy (FE-SEM) and all of the films were kept to be constant to $150\pm10$ nm on Coming glass and silicon wafer. A grain size was calculated from X-ray diffraction (XRD) on using the Scherrer' equation and their electrical properties investigated hall effect electronic transport measurement system. Moreover, we measured transmittance of AZO films by UV/VIS spectrometer.