• Proceedings of the IEEK Conference
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• 2002.06a
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• pp.145-148
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• 2002

This paper has been studied a predistorter which is able to linierizing of RF amplifier using schottkey. If input signal level is low, input signal is delivered directly. And if input signal level is high, input signal Is delivered with decreasing. So RF amplifier always works at saturation region .When this predistorter is used to simplified C-class RF amplifier, we have concluded that efficiency is improved about 3%.

• Electronics and Telecommunications Trends
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• v.34 no.5
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• pp.71-80
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• 2019

Gallium nitride (GaN) can be used in high-voltage, high-power-density/-power, and high-speed devices owing to its characteristics of wide bandgap, high carrier concentration, and high electron mobility/saturation velocity. In this study, we investigate the technology trends for X-/Ku-band GaN RF power devices and MMIC power amplifiers, focusing on gate-length scaling, channel structure, and power density for GaN RF power devices and output power level and output power density for GaN MMIC power amplifiers. Additionally, we review the technology trends in gallium arsenide (GaAs) RF power devices and MMIC power amplifiers and analyze the technology trends in RF power devices and MMIC power amplifiers based on both GaAs and GaN. Furthermore, we discuss the current direction of national research by examining the national and international technology trends with respect to X-/Ku-band power devices and MMIC power amplifiers.

• Proceedings of the KIEE Conference
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• 2002.11c
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• pp.589-592
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• 2002

A CMOS power amplifier for IMT-2000 is designed with 0.25-${\mu}m$ CMOS technology. This amplifier circuits consist of two cascode stages. Used cascode structure has good reverse isolation. These amplifier circuits consist of two stages which are driver stage and power amplification stage. The designed power amplifier is simulated with ADS using 0.25-${\mu}m$ CMOS library at 3.3 V power supply. Simulation results indicate that the amplifier has a PAE of 39 % and power gain of 24 dBm at 1.95 GHz.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.7 no.4
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• pp.602-607
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• 2006

In this paper, the distributed network synthesis, which is useful to the design of wireless power amplifiers, is proposed, and a RF power amplifier is designed using the technique. The transfer function of distributed matching circuits is derived by Chebyshev approximation, and network element values for a specified topology are given as a function of minimum insertion losses and ripples. As an example, after a power transistor is modeled by load-pull data, the synthesis for distributed matching networks is applied to a power amplifier design, which has the electrical performance of 17dB gain and less IM3 than -43dBc at the 20W output power between 800 to 900MHz frequency range. Experimental results from a fabricated amplifier are shown to approach the design performance in the operating frequency range. The design of impedance matching networks by the transfer function synthesis is a useful method for the design of RF power amplifiers.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.10
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• pp.826-831
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• 2009

In this paper, a high power RF amplifier module using AlN substrate of high thermal conductivity has been proposed. This RF amplifier module has the advantage of compact size and effective heat dissipation for the packaging of high power chip. To fabricate the thru-hole and scribing line on AlN substrate, the key parameters of $CO_2$ laser were experimented. And then, microstrip lines and spiral planar inductors were fabricated on an AlN substrate using the thin-film process. The fabricated microstrip lines on the AlN substrate has an attenuation value of 0.1 dB/mm up to 10 GHz. The fabricated spiral planar inductor has a high quality factor, a maximum of about 62 at 1 GHz for a 5.65 nH inductor. Packaging of a RF power amplifier was implemented on an AlN substrate with thru-hole. From the measured results, the gain is 24 dB from 13 to 15 GHz and the output power is 33.65 dBm(2.3 W).

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.1
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• pp.114-121
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• 2003

In this paper, low voltage and two stage CMOS Class E RF power amplifier for ISM(Industrial/Scientific/Medical) Open Band is presented. The power amplifier operates at 2.4GHz frequency, and is designed and simulated with a 0.35um CMOS technology and HSPICE simulator. The power amplifier is simple structure of two stage Class E power amplifier. The design procedure determing matching network was presented. The power amplifier is composed of input stage matching network, preamplifier, interstage matching network, power amplifier, and output stage matching network. The matching networks of input stage and interstage were constituted by pi($\pi$) type and L type respectively. At 2.4GHz operating frequency, and with a 2.5V supply voltage, the power amplifier delivers 23dBm output power to a 50${\Omega}$ load with 39% power added efficiency(PAE).

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2002.11a
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• pp.182-185
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• 2002

A RE predistorted asymmetric Doherty amplifier for CDMA IS-95 signal has been fabricated using GaAs FETs. The Doherty amplifier used a Class AB main device and a Class C auxiliary device. At 6 ㏈ back-of from Pl ㏈ of 34 ㏈m, PAE of 27% was measured. This Doherty amplifier has higher PAE than Class AB for over 20 dB range of pout power. A RF predistortion linearizer is applied to the Doherty amplifier to improve the IMD cancellation performance. The 3rd order IMD cancellation of 12.2 ㏈ was achieved at output power of 18 ㏈m.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.4
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• pp.484-490
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• 2012

In this paper, we design a digitally pre-distorted RF power amplifier operating in 900 MHz band. The linearity of RF power amplifier is improved by employing the digital pre-distortion(DPD) based on affine projection(AP) algorithm, where the look-up table(LUT) method is used with non-linear indexing. The proposed DPD with AP algorithm is compared with that with normalized least mean square(NLMS) algorithm, applied to the RF power amplifier. A commercial power amplifier module is used for verification of the proposed algorithm which shows improvement of adjacent channel leakage ratio(ACLR) by about 21 dB.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.16 no.10 s.101
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• pp.1010-1019
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• 2005

In this paper, we used neural network technique to model memory effects of RF power amplifier which is fed by two-tone input signals. The memory effects in power amplifier were identified by observing the unsymmetrical distribution of IMD(Inter-Modulation Distortion) measurements with the change of tone spacings and power levels. Different asymmetries of IMD were also found at different center frequencies. We applied TDNN technique to model LDMOS power amplifier based on two tone IMD data, and the accuracy was very high compared to other modeling methods such as the(memoryless) adaptive modeling method.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2003.11a
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• pp.113-117
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• 2003

This paper describes the design and the simulation results of the RF CMOS Class-E Power Amplifier for a 2.4GHz ISM band. This circuit is composed two connected amplifiers. where Class F amplifier drives Class E amplifier. The proposed circuit can reduce the total power dissipation of the driving stage and can work with higher efficiency. The power amplifier has been implemented in a standard $0.25{\mu}m$ CMOS technology and is shown to deliver 100mW output power to load with 41% power added efficiency(PAE) from a 2.5V supply.