• Journal of Korea Multimedia Society
• /
• v.21 no.9
• /
• pp.1068-1075
• /
• 2018

We propose a method for driving loudspeakers from class D audio power amplifiers in current mode, instead of in conventional voltage mode, which was impossible with the feedback circuitry. Unlike analog audio amplifiers, Class D audio power amplifiers have signal delay between the input and output signals, which makes it difficult to apply the feedback circuitry for current-mode driving. The idea of the pre-distortion scheme used for the compensation of the non-linearity of RF power amplifiers is adapted to remedy the impedance variation effect of the loudspeakers for current driving. The method uses the speaker model for the pre-distorter to compensate for the speaker impedance variation with frequency. The simulation and test results confirms the validity of the proposed method.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.26 no.12
• /
• pp.1083-1090
• /
• 2015

We designed and manufactured Ka-band SSPA include drive amplifier and high power amplifier MMICs by $0.15{\mu}m$ GaN commercial process. Also, we fabricated main components micro-strip line to WR28 waveguide transition and WR28 wave guide power combiner for Ka-band SSPA. This Ka-band SSPA shows saturated output power 44.2 dBm, power added efficiency 16.6 % and power gain 39.2 dB at 29~31 GHz frequency band.

• ETRI Journal
• /
• v.39 no.1
• /
• pp.51-61
• /
• 2017

This paper demonstrates a systematic approach for the design of broadband, high efficiency, high power, Class-AB RF amplifiers with high gain flatness. It is usually difficult to simultaneously achieve a high gain flatness and high efficiency in a broadband RF power amplifier, especially in a high power design. As a result, the use of a computer-aided simulation is most often the best way to achieve these goals; however, an appropriate initial value and a systematic approach are necessary for the simulation results to rapidly converge. These objectives can be accomplished with a minimum of trial and error through the following techniques. First, signal gain variations are reduced over a wide bandwidth using a proper pre-matching network. Then, the source and load impedances are satisfactorily obtained from small-signal and load-pull simulations, respectively. Finally, two high-order Chebyshev low-pass filters are employed to provide optimum input and output impedance matching networks over a bandwidth of 100 MHz-500 MHz. By using an EM simulation for the substrate, the simulation results were observed to be in close agreement with the measured results.

• Journal of electromagnetic engineering and science
• /
• v.15 no.4
• /
• pp.232-238
• /
• 2015

This work describes the development of a D-band (110-170 GHz) signal source based on a SiGe BiCMOS technology. This D-band signal source consists of a V-band (50-75 GHz) oscillator, a V-band amplifier, and a D-band frequency doubler. The V-band signal from the oscillator is amplified for power boost, and then the frequency is doubled for D-band signal generation. The V-band oscillator showed an output power of 2.7 dBm at 67.3 GHz. Including a buffer stage, it had a DC power consumption of 145 mW. The peak gain of the V-band amplifier was 10.9 dB, which was achieved at 64.0 GHz and consumed 110 mW of DC power. The active frequency doubler consumed 60 mW for D-band signal generation. The integrated D-band source exhibited a measured output oscillation frequency of 133.2 GHz with an output power of 3.1 dBm and a phase noise of -107.2 dBc/Hz at 10 MHz offset. The chip size is $900{\times}1,890{\mu}m^2$, including RF and DC pads.

• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.45 no.8
• /
• pp.53-59
• /
• 2008

In this paper, a novel dual-band high-efficiency class-F power amplifier using the composite right/left-handed (CRLH) transmission lines (TLs) has been realized with one RF Si lateral diffusion metal-oxide-semiconductor field effect transistor (LDMOSFET). The CRLH TL can lead to metamaterial transmission line with the dual-band tuning capability. The dual-band operation of the CRLH TL is achieved by the frequency offset and the nonlinear phase slope of the CRLH TL for the matching network of the power amplifier. Because the control of the all harmonic components is very difficult in dual-band, we have managed only the second- and third-harmonics to obtain the high efficiency with the CRLH TL in dual-band. Also, the proposed power amplifier has been realized by using the harmonic control circuit for not only the output matching network, but also the input matching network for better efficiency. Two operating frequencies are chosen at 880 MHz and 1920 MHz in this work. The measured results show that the output power of 39.83 dBm and 35.17 dBm was obtained at 880 MHz and 1920 MHz, respectively. At this point, we have obtained the power-added efficiency (PAE) of 79.536 % and 44.04 % at two operation frequencies, respectively.

• Proceedings of the KIPE Conference
• /
• 2003.07a
• /
• pp.260-263
• /
• 2003

When ICP(Inductive Coupled Plasma type etching and wafer manufacturing is being processed in semiconductor process, a noxious gas in PFC and CFC system is generated. Gas cleaning dry scrubber is to remove this noxious gas. This paper describes a power source device, 2MHz switching frequency class 2kW RF Generator, used as a main power source of the gas cleaning dry scrubber. The power stage of DC/DC converter is consist of full bridge type converter with 100kHz switching frequency Power amplifier is push pull type inverter with 2MHz switching frequency, and transmission line transformer. The adequacy of the circuit type and the reliability of generating plasma in various load conditions are verified through 50$\Omega$ dummy load and chamber experiments result.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.13 no.2
• /
• pp.801-807
• /
• 2012

In this paper, design and implementation of frequency down converter based on LC filter technic. Single frequency down converter, designed a low-noise amplifier, mixer, IF amplifier, LC filter was configured. And it is composed of DC block capacitors and RF bypass capacitor. LC filter, replace it with the IC reduced the power and realized low cost. The gain of single down converter is about 10dBm and realized by 18MHz bandwidth at 70MHz band.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.60 no.12
• /
• pp.2286-2292
• /
• 2011

In this paper we present the design of Low Noise Amplifier(LNA), mixer and filter for RF front-end part of partial discharge monitoring system. The monitoring system of partial discharge in high voltage power machinery is used to prevent many kinds of industrial accidents, and is usually composed of three parts - sensor, RF front-end and digital microcontroller unit. In our study, LNA, mixer and filter are key components of the RF front-end. The LNA consists of common gate and common source-cascaded structure and uses the resistive feedback for broad band matching. A coupled line structure is utilized to implement the filter, of which size is reduced by the meander structure. The mixer is designed using dual gate structure for high isolation between RF and local oscillator signal.

• Journal of electromagnetic engineering and science
• /
• v.8 no.3
• /
• pp.119-128
• /
• 2008

In this paper, we propose a developing approach of 600 W super high frequency(SHF) traveling wave tube amplifier (TWTA) for communications. Also, we make a TWTA called the experimental-TWTA(ETWTA), which uses a cathode ripple reduction technique to improve RF performance. After implementation, we discuss, and compare it with some other TWTAs. Its RF performance is better than that of other TWTAs. Therefore, this methodology can be used to develop the high power SHF TWTA for communications.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.31A no.5
• /
• pp.68-75
• /
• 1994

A new Predistortor that is designed using Feedforward type is proposed to overcome the nonlinearity of HPA (High Power Amplifier). HPA has the nonlinearity of the gain compression and phase distorton, so digital communication system of multi-carrier TDMA needs the linear RF transmitter. Using IMD (Intermodulation Distortion) of drive amplifier, as Feedforward type, the inverse IMD is coupled to the main loop with variable attenuators, phase shifters, and sub-amplifiers well designed. At the input of main amplifier, the over-coupled IMD surpresses the main amplifier 's IMD. Adjusting the level and phase of IMD at the sub loop, C/I of HPA is better than before correction.