• Title/Summary/Keyword: RF Noise

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An Ultra Wideband Low Noise Amplifier in 0.18 μm RF CMOS Technology

  • Jung Ji-Hak;Yun Tae-Yeoul;Choi Jae-Hoon
    • Journal of electromagnetic engineering and science
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    • v.5 no.3
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    • pp.112-116
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    • 2005
  • This paper presents a broadband two-stage low noise amplifier(LNA) operating from 3 to 10 GHz, designed with 0.18 ${\mu}m$ RF CMOS technology, The cascode feedback topology and broadband matching technique are used to achieve broadband performance and input/output matching characteristics. The proposed UWB LNA results in the low noise figure(NF) of 3.4 dB, input/output return loss($S_{11}/S_{22}$) of lower than -10 dB, and power gain of 14.5 dB with gain flatness of $\pm$1 -dB within the required bandwidth. The input-referred third-order intercept point($IIP_3$) and the input-referred 1-dB compression point($P_{ldB}$) are -7 dBm and -17 dBm, respectively.

Design of 2.5V Si CMOS LNA for PCS (PCS용 2.5V Si CMOS 저잡음 증폭기 설계)

  • 김진석;원태영
    • Proceedings of the IEEK Conference
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    • 2000.06b
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    • pp.129-132
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    • 2000
  • In this paper, a 1.8㎓ low noise amplifier was designed and simulated using 0.2$\mu\textrm{m}$ Si CMOS process. Noise characteristics and s parameters were extracted for the 300$\mu\textrm{m}$ gate width and 0.25$\mu\textrm{m}$ gate length NMOS transistors. For high available power gain, each stage was designed cascode type. It revealed available power gain of 23.5dB, noise figure of 2.0dB, power consumption of 15㎽ at 2.5V. It was shown that designed low noise amplifier had good RF performance. Designed Si CMOS LNA is expected to be used for RF front-end in transceiver.

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RF NOISE SUPPRESSION ON COPLANAR TRANSMISSION LINE USING LOSS GENERATION OF THE SOFT MAGNETIC FILMS

  • Kim, Ki-Hyeon;Shinji Ikeda;Masahiro Yamaguchi;Arai, Ken-Ichi;Hideaki Nagura;Shigehiro ohnuma
    • Proceedings of the Korean Magnestics Society Conference
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    • 2002.12a
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    • pp.200-201
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    • 2002
  • Recently, a countermeasure for the electromagnetic noise emission on RF integrated transmission line using the loss generation of ferromagnetic thin films is briefly suggested$\^$1,2/. Without the magnetic film, the noise harmonics of the signal pass through the transmission line with only a little attenuation. The ideal role of magnetic film is not to raise insertion losses in the pass-band and to give as large attenuation as possible to eliminate the noise harmonics at the stop-band, the frequency range higher than the meaningful signal as shown in Fig. 1. and Fig. 2. (omitted)

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Design of RF Energy Detector for Spectrum Sensing in TV White Space Transceiver (TV White Space 송수신기의 스펙트럼 센싱을 위한 RF 에너지 검출 회로 설계)

  • Kim, Jong-Sik;Shin, Hyun-Chol
    • The Journal of The Korea Institute of Intelligent Transport Systems
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    • v.11 no.2
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    • pp.83-91
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    • 2012
  • An RF energy detector for spectrum sensing in TV white space transceiver is presented. It is based on an RF active filtering technique that comprises a low-noise amplifier with a frequency-translation high-pass filtering feedfoward loop, which attenuates the unwanted sideband energy and only passes the wanted band energy. Unlike the conventional architecture, a new architecture that can attenuate both sidebands at the same time is proposed. A simplified system modeling method is presented to assess the non-ideality effects on the RF energy detector performances. System behavioral simulations demonstrate that the proposed architecture can be instrumental for realizaing a RF energy detector circuit in CMOS.

A Variant of Improved Robust Fuzzy PCA (잡음 민감성이 개선된 변형 퍼지 주성분 분석 기법)

  • Kim, Seong-Hoon;Heo, Gyeong-Yong;Woo, Young-Woon
    • Journal of the Korea Society of Computer and Information
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    • v.16 no.2
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    • pp.25-31
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    • 2011
  • Principal component analysis (PCA) is a well-known method for dimensionality reduction and feature extraction. Although PCA has been applied in many areas successfully, it is sensitive to outliers due to the use of sum-square-error. Several variants of PCA have been proposed to resolve the noise sensitivity and, among the variants, improved robust fuzzy PCA (RF-PCA2) demonstrated promising results. RF-PCA2, however, still can fall into a local optimum due to equal initial membership values for all data points. Another reason comes from the fact that RF-PCA2 is based on sum-square-error although fuzzy memberships are incorporated. In this paper, a variant of RF-PCA2 called RF-PCA3 is proposed. The proposed algorithm is based on the objective function of RF-PCA2. RF-PCA3 augments RF-PCA2 with the objective function of PCA and initial membership calculation using data distribution, which make RF-PCA3 to have more chance to converge on a better solution than that of RF-PCA2. RF-PCA3 outperforms RF-PCA2, which is demonstrated by experimental results.

A 900 MHz Zero-IF RF Transceiver for IEEE 802.15.4g SUN OFDM Systems

  • Kim, Changwan;Lee, Seungsik;Choi, Sangsung
    • ETRI Journal
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    • v.36 no.3
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    • pp.352-360
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    • 2014
  • This paper presents a 900 MHz zero-IF RF transceiver for IEEE 802.15.4g Smart Utility Networks OFDM systems. The proposed RF transceiver comprises an RF front end, a Tx baseband analog circuit, an Rx baseband analog circuit, and a ${\Delta}{\Sigma}$ fractional-N frequency synthesizer. In the RF front end, re-use of a matching network reduces the chip size of the RF transceiver. Since a T/Rx switch is implemented only at the input of the low noise amplifier, the driver amplifier can deliver its output power to an antenna without any signal loss; thus, leading to a low dc power consumption. The proposed current-driven passive mixer in Rx and voltage-mode passive mixer in Tx can mitigate the IQ crosstalk problem, while maintaining 50% duty-cycle in local oscillator clocks. The overall Rx-baseband circuits can provide a voltage gain of 70 dB with a 1 dB gain control step. The proposed RF transceiver is implemented in a $0.18{\mu}$ CMOS technology and consumes 37 mA in Tx mode and 38 mA in Rx mode from a 1.8 V supply voltage. The fabricated chip shows a Tx average power of -2 dBm, a sensitivity level of -103 dBm at 100 Kbps with PER < 1%, an Rx input $P_{1dB}$ of -11 dBm, and an Rx input IP3 of -2.3 dBm.

Radio Frequency Interference on the GNSS Receiver due to S-band Signals (S 대역 신호에 의한 위성항법수신기의 RF 신호간섭)

  • Kwon, Byung-Moon;Shin, Yong-Sul;Ma, Keun-Su;Ju, Jeong-Gab;Ji, Ki-Man
    • Journal of the Korean Society for Aeronautical & Space Sciences
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    • v.47 no.5
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    • pp.388-396
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    • 2019
  • This paper describes the RF(Radio Frequency) interference on the GNSS receiver due to the S-band signals transmitted from the transmitters in the Test Launch Vehicle, and analyzes the cause of the RF interference. Due to the S-band signals that have relatively high power levels compared with GNSS signals, an LNA(Low Noise Amplifier) in the active GNSS antenna was saturated, and the intermodulation signal within GNSS in-bands was produced in the LNA whenever two S-band signals were received from the GNSS antenna. For these reasons, the C/N0 of the satellite signals in the GNSS receiver was attenuated severely. The design of the LNA was changed in order to protect the RF interference due to the S-band signals and the suppression capability of the RF interference was confirmed in the new LNA through the comparison of the old LNA.

Radio Frequency Circuit Module BGA(Ball Grid Array) (Radio Frequency 회로 모듈 BGA(Ball Grid Array) 패키지)

  • Kim, Dong-Young;Jung, Tae-Ho;Choi, Soon-Shin;Jee, Yong
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.37 no.1
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    • pp.8-18
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    • 2000
  • We presented a BGA(Ball Grid Array) package for RF circuit modules and extracted its electrical parameters. As the frequency of RF system devices increases, the effect of its electrical parasitics in the wireless communication system requires new structure of RF circuit modules because of its needs to be considered of electrical performance for minimization and module mobility. RF circuit modules with BGA packages can provide some advantages such as minimization, shorter circuit routing, and noise improvement by reducing electrical noise affected to analog and digital mixed circuits, etc. We constructed a BGA package of ITS(Intelligent Transportation System) RF module and measured electrical parameters with a TDR(Time Domain Reflectometry) equipment and compared its electrical parasitic parameters with PCB RF circuits. With a BGA substrate of 3${\times}$3 input and output terminals, we have found that self capacitance of BGA solder ball is 68.6fF, and self inductance 146pH, whose values were reduced to 34% and 47% of the value of QFP package structure. S11 parameter measurement with a HP4396B Network Analyzer showed the resonance frequency of 1.55GHz and the loss of 0.26dB. Routing length of the substrate was reduced to 39.8mm. Thus, we may improve electrical performance when we use BGA package structures in the design of RF circuit modules.

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BCI Probe Emulator Using a Microstrip Coupler (마이크로스트립 커플러 구조를 이용한 BCI 프로브 Emulator)

  • Jung, Wonjoo;Kim, SoYoung
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.25 no.11
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    • pp.1164-1171
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    • 2014
  • Bulk Current Injection(BCI) test is a method of injecting current into Integrated Circuit(IC) using a current injection probe to qualify the standards of Electromagnetic Compatibility(EMC). This paper, we propose a microstrip coupler structure that can replace the BCI current injection probe that is used to inject a RF noise in standard IEC 62132-part 3 documented by International Electrotechnical Commission. Conventional high cost BCI probe has mostly been used in testing automotive ICs that use high supply voltage. We propose a compact microstrip coupler which is suitable for immunity testing of low power ICs. We tested its validity to replace the BCI injection probe from 100 MHz to 1,000 MHz. We compared the power[dBm] that is needed to generate the same level of noise between current injection probe and microstrip coupler by sweeping the frequency. Results show that microstrip coupler can inject the same level of noise into ICs for immunity test with less power.

Design of ESD Protection Circuits for High-Frequency Integrated Circuits (고주파 집적회로를 위한 ESD 보호회로 설계)

  • Kim, Seok;Kwon, Kee-Won;Chun, Jung-Hoon
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.47 no.8
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    • pp.36-46
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    • 2010
  • In multi-GHz RF ICs and high-speed digital interfaces, ESD protection devices introduce considerable parasitic capacitance and resistance to inputs and outputs, thereby degrading the RF performance, such as input/output matching, gain, and noise figure. In this paper, the impact of ESD protection devices on the performance of RF ICs is investigated and design methodologies to minimize this impact are discussed. With RF and ESD test results, the 'RF/ESD co-design' method is discussed and compared to the conventional RF ESD protection method which focuses on minimizing the device size.