• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.709-712
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• 2001

The effects of post annealing temperature by the Rapid Thermal Annealing(RTA) on the electrical properties of Pb(Zr,Ti)O$_3$(PZT) thin film were investigated. Analyses by the RTA treatments reveled that the leakage current of PZT thin films strongly depend on heating temperature and time. It was found that leakage current properties of PZT capacitor were changed by heating temperature during the RTA annealing. On Pt/Ti/Si substrates, PZT films are deposited at 350 $^{\circ}C$ by rf magnetron sputtering. The X-ray diffusion (XRD) was confirmed the formation of PZT thin film. Leakage current characteristics were improved with decreasing the post annealing temperature of PZT thin film. RTA annealed film on the 700$^{\circ}C$ shows ferroelectric and electrical properties with a remanent polarization of 12.4${\mu}$C/$\textrm{cm}^2$ coercive field of 117kV/cm, leakage current J= 6.2${\times}$10$\^$-6/ A/$\textrm{cm}^2$

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.822-825
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• 2003

Indium tin oxide (ITO) thin films were deposited by RF-magnetron sputtering method and the crystallization behavior of the films with no external heating as a function of deposition time was examined. X-ray diffraction results indicated an amorphous state of the film when the deposition time is short about 10 min. When the deposition time was increased over 20 min development of crystallization of the films is observed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.08a
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• pp.89-92
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• 2003

ITO thin films were deposited by RF-magnetron sputtering method and crystallization behavior of the films with and without external heating as a function of deposition time was examined. X-ray diffraction results indicated an amorphous state of the film when the deposition time is short about 10 min. When the deposition time was increased over 20 min development of crystallization of the films is observed. Because RF-sputtering transfers the high-energy to the growing film by energetic bombardment, it is believed that considerable activation energy for the crystallization of the film has transferred during deposition, which resulted in the crystallization of ITO thin films without external energy supply.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.9
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• pp.1386-1392
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• 1990

Characteristics of the direct thermal nitrided films by RF induction heating has been studied. The nitrided films on Si were prepared at 1000-1200\ulcorner in ammonia gas ambient. The nitrided films were analyzed by ellipsometry an Auger electron spectroscopy. I-V and C-V characteristics of MIS capacitors fabricated using nitrided film were investicated. The nitrided films were grown up mostly within initial thirty minutes and no significant growth was observed thereafter. Etch rates of films were about 1\ulcornermin in diluted HF (HF:H2O= 1:50). The nitrided films were resistant to dry and wet oxidations at temperatures below 1000\ulcorner and 900\ulcorner, respectively.

• Journal of Sensor Science and Technology
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• v.24 no.5
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• pp.348-352
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• 2015

Thin nickel oxide films formed on uncooled and cooled $SiO_2/Si$ substrates using a radio frequency (RF) magnetron sputter powered by 200 W in a mixed atmosphere of argon and oxygen. Grazing-incidence X-ray diffraction and field emission scanning electron microscopy are used for the structural analysis of nickel oxide films. The electrical conductivity required for better bolometric performance is estimated by means of a four-point probe system. Columnar and (200) preferred orientations are discovered in both films regardless of substrate cooling. Electric resistivity, however, is greatly influenced by the substrate cooling. Oxygen partial pressure increase during the nickel oxide deposition leads to a rapid decrease in resistivity, and the resistivity is higher in the cooled nickel oxide samples. Even when small microstructure variations are applied, lower resistivity in favor of low noise performance is acquired in the uncooled samples.

• Nuclear Engineering and Technology
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• v.41 no.6
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• pp.807-812
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• 2009

An ICRF discharge cleaning and a fast wave electron heating experiment were performed. For automated operation and providing the diagnostics of the ICRF system, the ICRF local network was designed and implemented. This internal network provides monitoring, RF protection, remote control, and RF diagnostics. All the functions of the control system were realized by customized DSP units. The DSP units were tied by a local network in parallel. Owing to the distributed feature of the control system, the ICRF local control system is quite flexible to maintain. Developing the subsystem is a more effective approach compared to developing a large controller that governs the entire system. During the first experimental campaign of the KSTAR tokamak, the control system operated as expected without any major problems that would affect the tokamak operation. The transmitter was protected from harmful over-voltage events through reliable operation of the system.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.274-274
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• 2012

We have researched on controlling an electron temperature and a plasma collision frequency to study the effect of collisions on helicon plasmas. So, we have designed and constructed an electron cyclotron resonance (ECR) heating system in the helicon device as an auxiliary heating source. Since then, we have tried to optimize experimental designs such as a magnetic field configuration for ECR heating and 2.45GHz microwave launching system for its power transfer to the plasma effectively, and have characterized plasma parameters using a Langmuir probe. For improving an efficiency of the ECR heating with R-wave in the helicon plasma, we would understand an effect of R-wave propagation with ECR heating in the helicon plasma, because the efficiency of ECR heating with R-wave depends on some factors such as electron temperature, electron density, and magnetic field gradient. Firstly, we calculate the effect of R-wave propagation into the ECR zone in the plasma with those factors. We modify the magnetic field configuration and this system for the effective ECR heating in the plasma. Finally, after optimizing this system, the plasma parameters such as electron temperature and electron density are characterized by a RF compensated Langmuir probe.

• Proceedings of the Korean Society of Medical Physics Conference
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• 2004.11a
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• pp.85-87
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• 2004

We fabricated flexible thermoradiotherapy probes to alternated combination with Interstitial hyperthermia and Brachyradiotherapy thermoradiotherapy probe was coated by gold plate on polyethylene brachytherapy probe. When Agar phantom was heated 15 minute with 30 W radiofrequency power, temperature increased as 5oC for polyethylene probe and 20oC for gold coated polyethylene probe. We observed that the 1 cm square array would heat a volume with a 1.25 cm radius circular field cross section to therapeutic temperatures (90% relative SAR using Tm) and the 2 cm square array with a 1.75 cm radius rectangular field with central inhomogeneity. With 2 cm long electrode implants, we observed that the 1 cm square array would heat a 3 cm long sagittal section to therapeutic temperature (90% relative SAR using Tm). The histopathological changes associated with RF heating of normal canine brains have been correlated with thermal distributions. RF needle electrode heating was applied for 50 min to generate tissue temperatures of 43${\circ}$C. We obtained a quarter of the heated tissue material immediately after heating and sacrificed at intervals from 7${\sim}$30 days. The acute stage was demonstrated by liquefactive necrosis, pyknosis of neuronal element in the gray matter. Mild gliosis occurring around the necrosis was demonstrated in the last sacrificed (days30)canine brain.

• Proceedings of the Korean Nuclear Society Conference
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• 2003.10a
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• pp.243.1-243.1
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• 2003

• Journal of the Korean institute of surface engineering
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• v.41 no.5
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• pp.214-219
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• 2008

Indium tin oxide (ITO) films were deposited on PET substrate by RF superimposed DC magnetron sputtering using ITO (doped with 10 wt% $SnO_2$) target. Substrate temperature was maintained below $750^{\circ}C$ without intentionally substrate heating during the deposition. The discharge voltage of DC power supply was decreased from 280 V to 100 V when superimposed RF power was increased from 0 W to 150 W. The electrical properties of the ITO films were improved with increasing of superimposed RF power. In the result of cyclic bending test, relatively high mechanical property was obtained for the ITO film deposited with RF power of 75 W under DC current of 0.75 A which could be attributed to the decrease of internal stress caused by decrease in both deposition rate and plasma impedance.