• Nutrition Research and Practice
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• 제3권2호
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• pp.149-155
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• 2009

In this study, we investigated the heat effect of digestion-resistant fraction (RF) from soybean on retarding bile acid transport in vitro. The RFs from soybean retarded bile acid transport. A raw, unheated RF of soybean (RRF-SOY) was significantly more effective than the heated RF of soybean (HRF-SOY). The RS1 which physically trapped in milled grains and inaccessible to digestive enzyme after 18 hrs incubation level of content in RRF-SOY was found to be as high as 24.1% and after heating the RS1 of HRF-SOY was significantly reduced to 16.8%. The X-ray diffraction pattern of RF from soybean was altered after heat treatment. The RFs from soybean were characterized by peak at diffraction angles of $12.0^{\circ}$ and $20.0^{\circ}$ corresponding to RS content. Cellulose contents of RRF-SOY was 5% higher than that of HRF-SOY and pentosan contents of RRF-SOY was 5% higher than that of HRF-SOY, too. Whereas the hemicellulose content of RRF-SOY was 13% lower than HRF-SOY.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.47-47
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• 2008

P-type transparent semiconductor $SrCu_2O_2$ thin films have been prepared by RF sputtering using low-alkali glass for LCD and quartz as substrates. Single phase of $SrCu_2O_2$ powder was obtained by heating a stoichiometric mixture of CuO and $SrCO_3$ at 1223K for 96h under N2 gas flow, and target was fabricated at 1243K for 24h. Room temperature conductivity of the sintered body was about 0.02S/cm, and the activation energy in the temperature range of $-50^{\circ}C$~RT and RT~$150^{\circ}C$ were 0.18eV, 0.07eV, respectively. Effects of deposition pressure and post-annealing temperature on the electrical and optical properties of the obtained thin film have been investigated.

• 한국전기전자재료학회논문지
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• 제25권7호
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• pp.563-568
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• 2012

Indium tin oxide (ITO) films were prepared using radio frequency (RF) magnetron sputtering method, magnets were equipped near the target in the sputter to bring the plasma near the target. The effect of magnetic field that brings the plasma near the substrate was compared with that of substrate heating. The effect of substrate heating on the grain size of the ITO thin film was larger than that of the magnetic field. However, the grain size of the ITO thin film was larger when the magnetic field was applied near the substrate during the sputtering process than when the substrate was not heated and the magnetic field was not applied. If stronger magnetic field is applied near the substrate during sputtering, it can be expected that the ITO thin film with good electrical conductivity and high transparency is obtained at low substrate temperature. When magnetic field of 90 Gauss was applied near the substrate during sputtering, the mobility of the ITO thin film increased from 15.2 $cm^2/V.s$ to 23.3 $cm^2/V.s$, whereas the sheet resistivity decreased from 7.68 ${\Omega}{\cdot}cm$ to 5.11 ${\Omega}{\cdot}cm$.

• Nuclear Engineering and Technology
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• 제55권2호
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• pp.595-602
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• 2023

The EAST ICRF system operating space has been extended in power and phase control with a low-level RF system for the new double-strap antenna. Then the multi-step power and periodic phase scanning experiment were conducted in L-mode plasma, respectively. In the power scanning experiment, the stored energy, radiation power, plasma impedance and the antenna's temperature all have positive responses during the short ramp-ups of P_L;ICRF. The core ion temperature increased from 1 keV to 1.5 keV and the core heating area expanded from |Z| ≤ 5 cm to |Z| ≤ 10 cm during the injection of ICRF waves. In the phasing scanning experiment, in addition to the same conclusions as the previous relatively phasing scanning experiment, the superposition effect of the fluctuation of stored energy, radiation power and neutron yield caused by phasing change with dual antenna, resulting in the amplitude and phase shift, was also observed. The active control of RF output facilitates the precise control of plasma profiles and greatly benefits future experimental exploration.

• 한국식품저장유통학회지
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• 제8권3호
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• pp.338-344
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• 2001

가열우지중 콜레스테롤 산화안정성을 연구하기 위하여 130, 150 및 18$0^{\circ}C$ 가열온도에서 일정시간 가열하였을 때 생성되는 각종 콜레스테롤 산화생성물을 TLC에 의하여 분리.확인하고, 지방산 조성의 변화를 측정하였다. 지방산 조성은 가열시간이 경과함에 따라 linoleic과 linolenic acid등의 불포화 지방산은 약간씩 감소한 반면 포화지방산의 함량은 다소 증가하는 경향이었고, 이러한 변화는 가열온도가 높을수록 심하였다. 추출한 비비누화물의 반점과 Rf값은 콜레스테롤 산화물의 표준품들과 일치함을 확인 할 수 있었다. 또한 TLC상으로 확인된 콜레스테롤 산화물은 7-$\alpha$-hydroxycholesterol, 7-$\beta$-hydroxycholesterol, 7-ketocholesterol 및 cholesterol epoxide의 4가지였으며, 이들 4가지 콜레스테롤 산화물은 가열 온도와 가열시간에 따라 생성되는 종류와 그 생성량이 상이함을 알 수 있었다.

• 대한약침학회지
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• 제13권2호
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• pp.33-49
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• 2010

Objectives: The aim of this experiment is to provide an objective differentiation of cultivated ginseng, mountain ginseng through component analysis, and to know the change of gin senoside components in the process of heating and fermentation Methods: Comparative analyses of ginsenoside $Rb_1$, $Rb_2$, Rc, Rd, Re, Rf, $Rg_1$, $Rg_3$, $Rh_1$, and $Rh_2$, from the cultivated ginseng 4 and 6 years, and mountain cultivated ginseng were conducted using HPLC (High Performance Liquid Chromatography, hereafter HPLC). And the same analyses were conducted in the process of heating and fermentation using mixed Lactobacillus rhamnosus, Lactobacillus plantarum, Bifidobacterium lactis for 7 days. Results: The change of ginsenosides to the process of red ginseng and fermentation, cultivated ginseng and mountain cultivated ginseng were showed another results. Mountain ginseng showed a lot of change compared with cultivated ginsengs. In the 7 days of fermentation, mountain ginseng showed that ginsenoside $Rg_1$, $Rb_1$, $Rb_2$, Rc, and Rd were decreased and increased ginsenoside Re, Rf, $Rg_3$ and $Rh_1$ were increased compared with cultivated ginseng Conclusions: It seemed that ginsenosides of mountain cultivated ginseng was better resolved than cultivated ginseng because the difference of structure or distribution of ginsenosides in the condition of fermentation.

• 대한약침학회지
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• 제23권2호
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• pp.79-87
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• 2020

Objectives: Ginsenosides found in ginseng, and the hydrolysates derived from their conversion, exhibit diverse pharmacological characteristics [1]. These have been shown to include anti-cancer, anti-angiogenic, and anti-metastatic effects, as well as being able to provide hepatic and neuroprotective effects, immunomodulation, vasodilation, promotion of insulin secretion, and antioxidant activity. Therefore, the purpose of this study was to examine how quickly the ginsenosides decompose and what kinds of degradation products are created under physicochemical processing conditions that don't involve toxic chemicals or other treatments that may be harmful. Methods: The formation of ginsenoside-Rg2 and ginsenoside-Rg3 was examined. These demonstrated diverse pharmacological effects. Results: We also investigated physicochemical factors affecting their conversion. The heating temperatures and times yielding the highest concentration of ginsenosides (-Rb1, -Rb2, -Rc, -Rd, -Rf, -Rg1, and -Re) were examined. Additionally, the heating temperatures and rates of conversion of these ginsenosides into new 'ginseng saponins', were examined. Conclusion: In conclusion, obtained provide us with effective technology to control the concentration of both ginsenosides and the downstream converted saponins (ginsenoside-Rg2, Rg3, Rg5, and Rk1 etc.), as well as identifying the processing conditions which enable an enrichment in concentration of these compounds.

• 한국결정성장학회지
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• 제25권3호
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• pp.85-92
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• 2015

SiC 결정은 전력반도체 소자용 소재로서 지금까지 외국은 물론 국내에서도 많은 연구가 이루어지고 있으며, 지금까지 고주파 유도가열 방식을 이용한 승화법으로 성장되어 왔다. 그러나, SiC 단결정은 결정 성장 계면에서의 온도 안정성에 따라 쉽게 다른 다형으로 성장하기 때문에, 고품질의 결정을 얻기 위해서는 결정성장 계면에서의 안정적인 온도 구배가 필요하다. 본 논문에서는 저항가열 방식을 이용한 승화법 성장 장치를 이용하여 종자결정을 사용하지 않은 상태에서 SIC 다결정상을 성장하여 보고, 성장 양상에 대하여 고찰하고자 하였다. SiC 다결정상은 성장속도 0.02~0.5 mm/hr로 성장되었으며, 성장된 SiC 다결정상의 두께는 0.25 mm~0.5 mm이고, 이 때 도가니 하부의 온도는 $2100{\sim}2300^{\circ}C$, 성장 압력은 10~760 torr의 범위에서 조절되었다. 성장된 다결정상 결정은 광학현미경으로 관찰하여, 성장 거동을 고찰하였다.

• 한국농업기계학회:학술대회논문집
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• 한국농업기계학회 1996년도 International Conference on Agricultural Machinery Engineering Proceedings
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• pp.293-304
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• 1996

Historical interest in dielectric properties of agricultural products and definitions of dielectric terms and basic principles governing their influence on elelctromagnetic energy are presented briefly . The nature of dielectric properties variation with frequency, temperature , and product density is discussed, Graphical data on the dielectric properties of products are presented that illustrate the dependence of these properties on moisture content, frequency, temperature, and density. Applications microwave dielectric properties of agricultural products are cited that include radio-frequency (RF) and microwave heating for seed treatment, improvement of nutritional and keeping qualities of some products, and controlling insects in grain. Uses of dielectric properties for product quality measurement and the rapid determination of moisture content are described. Principle of moisture determination in bulk grain by RF and microwave measurements are briefly presented.

• 한국표면공학회지
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• 제38권1호
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• pp.7-13
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• 2005

Bismuth thin films were prepared on glass substrate with RF magnetron sputtering and effects of substrate temperature on surface morphology and their electrical transport properties were investigated. Grain growth of bismuth after nucleation and the onset of coalescense of grains at 393 K were observed with field emission secondary electron microscopy. Continuous thin films could not be obtained above 473 K because of grain segregation and island formation. Hall effect measurements showed that substrate heating yields the decrease of carrier density and the increase of mobility. Resistivity of bismuth film has its minimum (about 0.7 x 10/sup -3/ Ωcm) in range of 403～433 K. Annealing of bismuth films deposited at room temperature was carried out in a radiation furnace with flowing hydrogen gas. The change of resistivity was not significant due to cancellation of the decrease of carrier density and the increase of mobility. The abrupt change of electrical properties of film annealed above 523 K was found to be caused by partial oxidation of bismuth layer in x-ray diffraction analysis.