• Title/Summary/Keyword: RF Front-End

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Four Channel Step Up DC-DC Converter for Capacitive SP4T RF MEMS Switch Application (정전 용량형 SP4T RF MEMS 스위치 구동용 4채널 승압 DC-DC 컨버터)

  • Jang, Yeon-Su;Kim, Hyeon-Cheol;Kim, Su-Hwan;Chun, Kuk-Jin
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.46 no.2
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    • pp.93-100
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    • 2009
  • This paper presents a step up four channel DC-DC converter using charge pump voltage doubler structure. Our goal is to design and implement DC-DC converter for capacitive SP4T RF MEMS switch in front end module in wireless transceiver system. Charge pump structure is small and consume low power 3.3V input voltage is boosted by DC-DC Converter to $11.3{\pm}0.1V$, $12.4{\pm}0.1V$, $14.1{\pm}0.2V$ output voltage With 10MHz switching frequency. By using voltage level shifter structure, output of DC-DC converter is selected by 3.3V four channel selection signals and transferred to capacitive MEMS devices. External passive devices are not used for driving DC-DC converter. The total chip area is $2.8{\times}2.1mm^2$ including pads and the power consumption is 7.52mW, 7.82mW, 8.61mW.

On-chip Inductor Modeling in Digital CMOS technology and Dual Band RF Receiver Design using Modeled Inductor

  • Han Dong Ok;Choi Seung Chul;Lim Ji Hoon;Choo Sung Joong;Shin Sang Chul;Lee Jun Jae;Shim SunIl;Park Jung Ho
    • Proceedings of the IEEK Conference
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    • 2004.08c
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    • pp.796-800
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    • 2004
  • The main research on this paper is to model on-chip inductor in digital CMOS technology by using the foundry parameters and the physical structure. The s-parameters of a spiral inductor are extracted from the modeled equivalent circuit and then compared to the results obtained from HFSS. The structure and material of the inductor used for modeling in this work is identical with those of the inductor fabricated by CMOS process. To show why the modeled inductor instead of ideal inductor should be used to design a RF system, we designed dual band RF front-end receiver and then compared the results between when using the ideal inductor and using the modeled inductor.

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Development and characterization of a ultra-wide bandwidth video detector for the UHF partial discharge monitoring system (UHF 부분방전 감시 장치를 위한 초광대역 검출장치 개발 및 특성조사)

  • Park, Ki-Jun;Goo, Sun-Geun;Yoon, Jin-Yul
    • Proceedings of the KIEE Conference
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    • 2002.07c
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    • pp.1649-1651
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    • 2002
  • Ultra-wide bandwidth (UWB) detection method has been widely used as a front end detection scheme for the ultra-high frequency (UHF) partial discharge (PD) monitoring systems. A broad-band video detector module was developed and characterized for the UHF UWB PD detection systems. The useable bandwidth of the module is more than 2 GHz and it is optimized for 50-ohm systems. The detection sensitivity and dynamic range of the module were characterized by using a known ns-width RF pulses of GHz range. The dynamic range is more than 6-decades and the module can detect pulsed RF signals down to 1 nW. The detector module can eliminate expensive equipment such as high speed oscilloscopes and radio frequency (RF) spectrum analyzers. Therefore, it enables one to use slow speed data acquisition systems for the PD monitoring at the UHF range. The detector module was used to detect real PDs of about <3 pC. The module converts the UWB PD signals into a low-bandwidth video signal with a high signal-to-noise ratio.

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A 85-mW Multistandard Multiband CMOS Mobile TV Tuner for DVB-H/T, T-DMB, and ISDB-T Applications with FM Reception

  • Nam, Ilku;Bae, Jong-Dae;Moon, Hyunwon;Park, Byeong-Ha
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.15 no.3
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    • pp.381-389
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    • 2015
  • A fully integrated multistandard multiband CMOS mobile TV tuner with small silicon area and low power consumption is proposed for receiving multiple mobile digital TV signals and FM signal. In order to reduce the silicon area of the multistandard multiband receiver, other RF front-end circuits except LNAs are shared and a local oscillator (LO) signal generation architecture with a single VCO for a frequency synthesizer is proposed. To reduce the low frequency noise and the power consumption, a vertical NPN BJT is used in an analog baseband circuits. The RF tuner IC is implemented in a $0.18-{\mu}m$ CMOS technology. The RF tuner IC satisfies all specifications for DVB-H/T, T-DMB, and ISDB-T with a sufficient margin and a successful demonstration has been carried out for DVB-H/T, T-DMB, and ISDB-T with a digital demodulator.

Development of RF IC, Signal Processing IC and Software for Portable GPS Receiver (휴대 GPS 수신기용 RF IC, 신호처리 IC 및 소프트웨어 개발)

  • Ryum, Byung R.;Koo, Kyung Heon;Song, Ho Jun;Jee, Gyu In
    • Journal of Advanced Navigation Technology
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    • v.1 no.1
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    • pp.23-34
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    • 1997
  • A multi-channel digital GPS receiver has been developed including a RF-to-IF engine (engine 1), a digital signal processing engine (engine 2) with a microprocessor interfacing, and a navigation software. A high speed SiGe heterojunction bipolar transistor (HBT) as a active device has been mounted on chip-on-board (COB) type hybrid ICs such as LNA, mixer, and VCO in RF front-end of the engine 1 board. A 6-channel digital correlator together with a real-time clock and a microprocessor interface has been realized using an Altera Flex 10K FPGA as well as ASIC technology. Navigation software controlling the correlator for GPS signal tracking, retrieval and storing a message retrieval, and position calculation has been implemented. The GPS receiver was tested using a single channel STR2770 simulator. Successful navigation message retrieval and position determination was confirmed.

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TV White Space Low-noise and High-Linear RF Front-end Receiver (텔레비전 유휴 주파수 대역을 지원하는 저잡음 및 고선형 특성의 RF 수신기 설계)

  • Kim, Chang-wan
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.22 no.1
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    • pp.91-99
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    • 2018
  • This paper has proposed a low-noise and high-linear RF receiver supporting TV white space from 470 MHz to 698 MHz), which is implemented in $0.13-{\mu}m$ CMOS technology. It consists of a low-noise amplifier, a RF band-pass filter, a RF amplifier, a passive down-conversion mixer, and a channel-selection low-pass filter. A low-noise amplifier and RF amplifier provide a high voltage gain to improve the sensitivity level. To suppress strong and nearby interferers, two RF filtering schemes have been performed by using a RF BPF and a down-conversion mixer. The proposed LPF has been based on the common-gate topology and adopted a bi-quad cell to achieve -24dB/oct characteristics. In addition, the RF receiver can support the overall TV band by controlling a LO frequency. The simulated results show a voltage gain of 56 dB, a noise figure of less than 2 dB, and an out-of-channel IIP3 of -2.3 dBm. It consumes 37 mA from a 1.5 V supply voltage.

The study on Characteristics and Fabrication of RF Switch module devices (집적화 RF Switch module의 제조와 특성에 관한 연구)

  • Kim, In-Sung;Min, Bok-Ki;Song, Jae-Sung;Suh, Yeung-Suk
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07b
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    • pp.1217-1219
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    • 2003
  • 상용화되어 있는 이동통신 기기의 Front-end 부분은 듀플렉서와 필터를 포함하는 수동소자로 구성되어 있다. 듀플렉서의 임피던스 정합선로는 전송선로 이론으로부터 설계하며, 단순하게 ${\lambda}=1/4$ 파장 길이의 정합 선로를 설치하는 것이기 때문에 정합선로를 이용한 듀플렉서 성능을 극대화하기 위한 설계의 융통성이 없는게 현실이다. 이런 문제점을 해결하기 위하여 집중소자(lumped element)인 R L C를 탄성 표면파 듀플렉서 대신 스위치 모들에 적용하게 된다면 여러 가지 다양한 형태의 회로를 구현할 수 있고 회로망 내에 위치하는 집중소자의 정격을 최적화하여 스위치 모듈의 성능을 향상시킬 수 있는 가능성이 있다. 본 연구에서는 $900 MHz{\sim}2.2 GHz$의 대역에서 소형화 집적화에 적용 가능한 디바이스를 개발하기 위하여 고주파, 저진압, 저손실 스위치 모듈의 제조와 구성되는 커패시터와 인덕터의 제조와 특성에 관하여 연구하였다.

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Complex Bandpass Sampling Technique and Its Generalized Formulae for SDR System (SDR 시스템을 위한 Complex Bandpass Sampling 기법 및 일반화 공식의 유도)

  • Bae, Jung-Hwa;Ha, Won;Park, Jin-Woo
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.30 no.7C
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    • pp.687-695
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    • 2005
  • A bandpass sampling technique, which is a method directly downconverting a bandpass signal to a baseband or a low IF signal without analog mixers, can be an alterative choice for the SDR system to minimize the RF front-end. In this paper, a complex bandpass sampling technique for two bandpass-filtered signals is proposed. We derived generalized formulae for the available sampling range, the signal's IF and the minimum sampling frequency taking into consideration the guard-bands for the multiple RE signals. Thru the simulation experiments, the advantages of the . complex bandpass sampling over the pre-reported real bandpass sampling are investigated for applications in the SDR design.

Analysis of Safety Alarm Mechanism for RF -based Equipment for Casualty Protection by Railway Maintenance Vehicle

  • Jo, Hyun-Jeong;Hwang, Jong-Gyu;Yoon, Yong-Ki
    • International Journal of Safety
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    • v.9 no.2
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    • pp.29-34
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    • 2010
  • When doing maintenance works at the trackside of railway, the method which delivers information on approaching of train to maintenance workers through alarm devices such as the flag or indication light, etc., is being used by locating persons in charge of safety alarm in addition to the maintenance workers at fixed distances in the front and rear of the workplace. Workers maintaining at the trackside may collide with the train since they cannot recognize the approach of train although it approaches to the vicinity of maintenance workplace because of the sensory block phenomenon occurred due to their long hours of continued monotonous maintenance work. The clash or rear-end collision accidents between many maintenance trains called motor-cars can be occurred since there are cases where the signal systems for safe operation of motor-car such as track circuit etc. are blocked or not operated normally. We developed the new safety equipment for protection of trackside maintenance workers using radio frequency signals and bidirectional detection mechanism. The developed safety equipment must analyze the several operational mechanism for each different operation situations. In this paper the analysis results are represented.

A Study on the Design of Ku-band Mixer Using a HEMT (HEMT를 이용한 Ku-band 혼합기의 설계에 관한 연구)

  • 성혁제;구자건
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.18 no.7
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    • pp.944-950
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    • 1993
  • Diodes and GaAs have been commonly used in a mixer design until recently. However, diodes are not preferred to use at the front-end of DBS receiver due to the conversion loss large noise. HEMT has larger conversion gain and better noise characteristics comparing with GaAs MESFET. This paper describes the design procedure, structure, and performance of a mixer, utilizaing HEMT designed by OKI Co. . A mixer configuration in which the local oscillator(LO) signal is applied to the gate is used. When the LO power is 0.01 dBm, the conversion gain of 3.7dB is obtained at IF and the 3 dB bandwidth is 400MMz.

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