• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.10
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• pp.687-698
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• 2001

This paper presents a three dimensional stacked pad area away (PAA) package configuration as an implementation method of radio frequency (RF) circuits. 224MHz RF circuits of intelligence traffic system(ITS) were constructed with the stacked PAA RF pakage configuration. In the process of manufacturing the stacked PAA RF pakage, RF circuits were partitioned to subareas following their function and operating frequency. Each area of circuits separated to each subunits. The operating characteristics of RF PAA package module and the electrical properties of each subunits were examined. The measurement of electrical parameters for solder balls which were interconnects for stacked PAA RF packages showed that the parasitic capacitance and inductance were 30fF and 120pH, respectively, which might be negligible in PAA RF packaging system. HP 4396B network/spectrum analyzer revealed that the amplification gain of a receiver and transmitter at 224 MHz was 22dB and 27dB, respectively. The gain was 3dB lower than designed values. The difference was probably generated from fabrication process of the circuits by employing commercial standard

• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.6
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• pp.1051-1057
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• 2009

USN(Ubiquitous Sensor Network) is used to provide many services such as bridge monitoring, cultural properties monitoring, river monitoring, protection of an old and feeble person, management and control of a city and circumstance monitoring, etc. A RF transceiver is needed for implementing USN. In this paper the implementation and the design of a RF transceiver for sensor nodes operating in 2.4GHz frequency band are presented. The design procedure of AGC, a receiver and a transmitter is described. And the performance of the implemented RF transceiver is also tested. The test results of receiver sensitivity, receiver dynamic range, frequency stability, phase noise, output power of transmitter, flatness and spectrum mask are presented.

• The Journal of the Korea institute of electronic communication sciences
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• v.10 no.12
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• pp.1315-1320
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• 2015

In this paper Communication data link equipment on a high speed-hopping method to use the frequency resources efficiently for the frequency environment is introduced such as sensing techniques, using the same frequency band by using the received two-channel technique and the receive filter bank unit applied to be shared with other equipment such as radar and so on. The real-time measurement and analysis were operated for measurement the frequency environment of the operating band in advance. and primarily equipment to develop is analyzed how the interference effect to the radar minimize the operation of radar equipment. In reverse, to use the same frequency band the methods such as frequency sharing techniques are presented in this paper. Finally, by design of the main items of the RF transceiver NF, transmission output, and a simulation of the IMD, such as whether the key is verified prior to meet specifications.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.5
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• pp.401-409
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• 2013

Numerical analysis on RF (Radio-Frequency) thermal plasma treatment of micro-sized Ni metal was carried out to understand the synthesis mechanism of nano-sized Ni powder by RF thermal plasma. For this purpose, the behaviors of Ni metal particles injected into RF plasma torch were investigated according to their diameters ($1{\sim}100{\mu}m$), RF input power (6 ~ 12 kW) and the flow rates of carrier gases (2 and 5 slpm). From the numerical results, it is predicted firstly that the velocities of carrier gases need to be minimized because the strong injection of carrier gas can cool down the central column of RF thermal plasma significantly, which is used as a main path for RF thermal plasma treatment of micro-sized Ni metal. In addition, the residence time of the injected particles in the high temperature region of RF thermal plasma is found to be also reduced in proportion to the flow rate of the carrier gas In spite of these effects of carrier gas velocities, however, calculation results show that a Ni metal particle even with the diameter of $100{\mu}m$ can be completely evaporated at relatively low power level of 10 kW during its flight of RF thermal plasma torch (< 10 ms) due to the relatively low melting point and high thermal conductivity. Based on these observations, nano-sized Ni metal powders are expected to be produced efficiently by a simple treatment of micro-sized Ni metal using RF thermal plasmas.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.9 no.3
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• pp.638-646
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• 2005

In recent wireless communications, direct conversion transceiver or If sampling SDR-based receivers have being designed as an alternative to conventional transceiver topologies. In direct conversion receiver a.chitectu.e, the 1.equency/phase offset between the RF input signal and the local oscillator signal is a major impairment factor even though the conventional AFC/APC compensates the service deterioration due to the offset. To rover the limited tracking range of the conventional method and effectively aid compensation scheme in terms of I/Q channel imbalances, the frequency/phase offset compensation in RF-front end signal stage is proposed in this paper. In RF-front end, the varying phase offset besides the fixed large frequency/phase offset are corrected by using early-late phase compensator. A more simple frequency and phase tacking function in digital signal processing stage of direct conversion receiver is effectively available by an ingenious frequency/phase offset tracking method in RF front-end stage.

• Journal of Positioning, Navigation, and Timing
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• v.6 no.1
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• pp.1-8
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• 2017

In this study, to design a multi-GNSS receiver using single RF front-end, the receiving performances for various frequency plans were evaluated. For the fair evaluation and comparison of different frequency plans, the same signal needs to be received at the same time. For this purpose, two synchronized RF front-ends were configured using USRP X310, and PC-based software was implemented so that the quality of the digital IF signal received at each front-end could be evaluated. The software consisted of USRP control, signal reception, signal acquisition, signal tracking, and C/N0 estimation function. Using the implemented software and USRP-based hardware, the signal receiving performances for various frequency plans, such as the signal attenuation status, overlapping of different systems, and the use of imaginary or real signal, were evaluated based on the C/N0 value. The results of the receiving performance measurement for the various frequency plans suggested in this study would be useful reference data for the design of a multi-GNSS receiver in the future.

• Journal of Digital Contents Society
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• v.13 no.4
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• pp.491-500
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• 2012

In this paper, a new loopback BIST structure which is effective to test RF transceiver chip and LNA(Low Noise Amplifier) in the chip is presented. Because the presented BIST structure uses a baseband processor in the chip as a tester while the system is under testing mode, the developed test technique has an advantage of performing test application and test evaluation in effectiveness. The presented BIST structure can change high frequency test output signals to a low frequency signals which can make the CUT(circuits under test) tested easily. By using this technique, the necessity of RF test equipment can be mostly reduced. The test time and test cost of RF circuits can be cut down by using proposed BIST structure, and finally the total chip manufacturing costs can be reduced.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.10
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• pp.60-66
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• 1998

The hot carrier induced performance degradation of 0.8${\mu}{\textrm}{m}$ RF NMOSFET has been investigated within the general framework of the degradation mechanism. The device degradation model of an unit finger gate MOSFET could be applied for the device degradation of the multi finger gate RF NMOSFET. The reduction of cut-off frequency and maximum frequency can be explained by the transconductance reduction and the drain output conductance increase, which are due to the interface state generation after the hot carrier stressing. From the correlation between hot carrier induced DC and RF performance degradation, we can predict the RF performance degradation just by the DC performance degradation measurement.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.2
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• pp.7-12
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• 2008

In this study, the wide width effect that the increasing rate of drain current and the value of cutoff frequency decrease with larger finger number is observed. For modeling this effect, an improved SPICE MOSFET RF model that finger number-independent external source resistance is connected to a conventional BSIM3v3 RF model is developed. Better agreement between simulated and measured drain current and cutoff frequency at different finger number is obtained for the improved model than the conventional one, verifying the accuracy of the improved model for $0.13{\mu}m$ multi-finger MOSFET.

• The Journal of the Korea Contents Association
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• v.6 no.4
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• pp.1-10
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• 2006

In this paper, a broadband RF module is designed and tested for 2.4GHz band applications. The RF module is composed of a low noise amplifier (LNA) with a three stage amplifier, a single ended gate mixer, matching circuits, a hairpin line band pass filter and a Chebyshev low pass filter to convert the radio frequency (RF) into the intermediate frequency (IF). The LNA has a high gain and stability, and the single ended gate mixer has a high conversion gain and wide dynamic range. In the analysis of the broadband RF module, the composite harmonic balance technique is used to analyze the operating characteristics of an RF module circuit. The RF module has a 55.2dB conversion gain with a 1.54dB low noise figure, $-120{\sim}-60dBm$ wide RF power dynamic range, -60dBm low harmonic spectrum and a good isolation factor among the RF, IF, and local oscillator (LO) ports.