• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 2009.06a
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• pp.496-497
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• 2009

This paper describes about the realization of a remote RF sensor system and its applications. RF Sensor System was designed and realized on DSP over the range of high frequency such as about 200[KHz]. It should be "wireless", "implantable" and "batteryless". Futhermore, the system should be consist of passive components such as R, Land C. The measurement was given using the inductive coupling principle between primary source part and secondary sensor part. This newly developed parameter estimation system can be easily applied to the Ambient Intelligent System including the ubiquitous computing and the sensitive environmental changes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.422-423
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• 2005

RF Micro switches is a miniature device or an array of integration devices and mechanical components and fabricated with Ie batch-processing techniques. RF Micro switches application area are in phased arrays and reconfigurable apertures for defence and telecommunication systems, switching network for satellite communication, and single-pole double throw switches for wireless application. Recently, RF Micro switches have been developed for the application to the milimeter wave system. RF Micro switches offer a substantilly higher performance than PIN diode or FET switches. In this paper, SPDT(single-pole-double-throw) switch are designed to use 10 GHz. Actuation voltage and displacement are simulated by tool.

• Proceedings of the KIEE Conference
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• 1998.11a
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• pp.112-114
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• 1998

The passive system requires RF-DC converter. RF-DC converter, which is used in microwave region, is more affected by parasitic elements than used in low frequency region. So it is difficult to make the converter. RF-DC converter usually consists of resonator, shottky diode, capacitor, voltage regulator. In this study, we used the rechargeable battery instead of capacitor. If any passive transponder requires more power than general transponder, battery tech of this components is important to apply for the passive system. In this paper, passive transponder, which requires more power than general passive transponder, is presented and compared to general passive transponder.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.669-670
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• 2006

This paper describes the functions and design technology of the T-DMB (Terrestrial Digital Multimedia Broadcasting) receiver. T-DMB is a novel broadcasting media that can provide high-quality video and audio services. In this paper, we will describe the VLSI implementation of RF, Baseband and Multimedia Chip for T-DMB Receiver. The designed DMB SoC has low power consumption and has been implemented using a standard-cell library in 0.18um CMOS technology.

• Proceedings of the IEEK Conference
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• 2004.08c
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• pp.776-779
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• 2004

A RF front-end module is designed for GIS(Gas Insulated Substation) which is employed for effective and efficient very high voltage transmission. Major advantage of the unit is improved PO detection sensitivity through minimizing the effect of surrounding interference signals, which is achieved by controlling the gain and the selection of the frequency band, for the precise detection of any UHF PO (Partial Discharge) disturbance occurred in the GIS due to some unwanted problems. For the development of the module, various switches for providing selected signal paths, wideband LNA, 3 BPF for selecting detection frequency band, and video detector are designed, fabricated and measured on 1 mm FR4 substrate with various RF components. The detection sensitivity of the unit was <-60 dBm that is sufficient to detect UHF PO signals as low as 1 pC. It is believed that the value is enough to detect the signal occurred in GIS.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.809-812
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• 2005

In this work, a new method for extracting substrate parameters of RF MOSFETs based on 3-port measurement is presented using device simulation. A T-type substrate resistance network is used. 3-port Y-parameter analyses were performed on the equivalent circuit of RF MOSFETs. All the components in the RF MOSFETs when the device is turned off were extracted directly from the 3-port device simulation data. The small-signal output admittance $Y_{22}$ can be well modeled up to 40 GHz. From the 3-port simulation and modeling results, it was verified that the proposed equivalent circuit and parameter extraction method was more accurate than the single substrate resistance model.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.1
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• pp.26-32
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• 1994

In this paper, using the newly developed GaAs Schottky beam-lead diode made by Marconi company, we have developed and evaluated the waveguide type single-ended mixer at Q-band. The various components of the mixer were separately designed and optimized using the Super-Compact software. These studies included the design of the step waveguide impedance transformer and the RF-choke filter, and the optimization of a high and low impedance for the RF-choke filter. Moreover, this RF-choke filter pattern included a section to reject the second harmonic frequency of the RF signal. Finally, this Q-band mixer with 1.4GHz/400MHz IF frequency exhibits an average conversion loss of 5.3 dB over 33-50GHz bandwidth.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.410-413
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• 2001

In this paper, we present results of this that design of the multi-layer VCO(Voltage Controlled Oscillator), which is composed of the resonation circuit and the oscillation circuit, using EM simulator and nonlinear RF circuit simulator. EM simulator is used for acquiring EM(Electromagnetic) characteristics of conductor pattern as well as designing multi-layer VCO, Acquired EM characteristics of the circuit pattern was used like real components at nonlinear RF circuit simulator. Finally VCO is simulated at nonlinear RF circuit simulator. The material for the circuit pattern was Ag and the dielectric was DuPont #9599, which is applied for L TCC process. The structure is constructed with 4 conducting layer. Simulated results showed that the output level was about 1[dBm], the phase noise was 102 [dBc/Hz] at 30[kHz] offset frequency, the harmonics -8dBc, and the control voltage sensitivity of 30[MHz/V] with a DC current consumption of l0[mA]

• Journal of Information Display
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• v.12 no.2
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• pp.109-113
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• 2011

This paper summarizes the recent fabrication and characterizations of flexible high-speed radio frequency (RF) transistors, PIN-diode single-pole single-throw switches, as well as flexible inductors and capacitors, based on single-crystalline Si nanomembranes transferred on polyethylene terephthalate substrates. Flexible thin-film transistors (TFTs) on plastic substrates have reached RF operation speed with a record cut-off/maximum oscillation frequency ($f_T/f_{max}$) values of 3.8/12 GHz. PIN diode switches exhibit excellent ON/OFF behaviors at high RF frequencies. Flexible inductors and capacitors compatible with high-speed TFT fabrication show resonance frequencies ($f_{res}$) up to 9.1 and 13.5 GHz, respectively. Robust mechanical characteristics were also demonstrated with these high-frequency passives components.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.410-413
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• 2001

In this paper, we present results of this that design of the multi-layer VCO(Voltage Controlled Oscillator), which is composed of the resonation circuit and the oscillation circuit, using EM simulator and nonlinear RF circuit simulator. EM simulator is used for acquiring EM(Electromagnetic) characteristics of conductor pattern as well as designing multi-layer VCO, Acquired EM characteristics of the circuit pattern was used like real components at nonlinear RF circuit simulator. Finally VCO is simulated at nonlinear RF circuit simulator. The material for the circuit pattern was Ag and the dielectric was Dupont ＃9599, which is applied for LTCC process. The structure is constructed with 4 conducting layer. Simulated results showed that the output level was about 1[dBm], the phase noise was 102 [dBc/Hz] at 30[kHz] offset frequency, the harmonics -8dBc, and the control voltage sensitivity of 30[MHz/V] with a DC current consumption of 10[mA].