• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.74-74
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• 2009

Titanium nitride has been used as hardmask for semiconductor process, capacitor of MIM type and diffusion barrier of DRAM, due to it's low resistivity, thermodynamic stability and diffusion coefficient. Characteristics of the TiN film are high intensity and chemical stability. The TiN film also has compatibility with high-k material. This study is an experimental test for better condition of TiN film etching process. The etch rate of TiN film was investigated about etching in $BCl_3/Ar/O_2$ plasma using the inductively coupled plasma (ICP) etching system. The base condition were 4 sccm $BCl_3$ /16 sccm Ar mixed gas and 500 W the RF power, -50 V the DC bias voltage, 10 mTorr the chamber pressure and $40\;^{\circ}C$ the substrate temperature. We added $O_2$ gas to give affect etch rate because $O_2$ reacts with photoresist easily. We had changed $O_2$ gas flow rate from 2 sccm to 8 sccm, the RF power from 500 W to 800 W, the DC bias voltage from -50 V to -200 V, the chamber pressure from 5 mTorr to 20 mTorr and the substrate temperature from $20\;^{\circ}C$ to $80\;^{\circ}C$.

• Journal of Advanced Marine Engineering and Technology
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• v.35 no.6
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• pp.842-848
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• 2011

A fabricated hybrid control board using multi-communication is designed with a low power 8-bit microcontroller, ATxmega128A1. The microcontroller consists of 8 UART (Universal asynchronous receiver/transmitter) ports, 2 kbytes EEPROM, 128 kbytes flash memory, 8 kbytes SRAM. The 8 URAT ports are used for a multi-communication modem, a GPS module, etc. The EEPROM is used for saving a configuration for running programs, and the flash memory of 128 kbytes is used for storing a F/W (Firm Ware), and the 8 kbytes SRAM is used for stack and for storing memory of global variables while running programs. If we use the multi-communication of CDMA, TRS and RF to remotely control Aid to Navigation, it is able to remove the communication shadow area. Even though there is a shadow area for an individual communication method, we can select an optimal communication method. The compatibility of data has been enhanced as using of same data frame per communication device. For the test, 8640 of data have been collected from each buoy during 30 days in every 5 minutes and the receiving rate of the data has shown more than 85 %.

• Journal of Advanced Navigation Technology
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• v.24 no.1
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• pp.1-8
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• 2020

In this research, we develop an airborne equipment radiating S/C-band signal to a target located at a long distance. RF interface of the equipment comprises band-specific transmitters and an broadband antenna to satisfy EIRP(effective isotropic radiated power) requirements. The equipment is in a shape of a POD like an aircraft fuel tank. The measured weight of the equipment is 119.8 kg, the CG(center of gravity) is 1391.35 mm and the MOI(moment of inertia) are 46.07 ± 0.05(I_yy) kg·㎡, 45.36 ± 0.09(I_zz) kg·㎡. All results are found to meet the requirements for aircraft installation. To verify flight safety, EMI(electromagnetic interference) tests (RE102, CE102), environmental tests (high/low temperature operation, altitude), intra-system EMC(electromagnetic compatibility) and HERP(hazards electromagnetic radiation personnel) tests have been conducted and all the test results met the requirements. It is confirmed that the equipment could be mounted on the aircraft by meeting all electrical and mechanical requirements.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.3
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• pp.196-203
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• 2004

A three-dimensional (3D) IC technology platform is presented for high-performance, low-cost heterogeneous integration of silicon ICs. The platform uses dielectric adhesive bonding of fully-processed wafer-to-wafer aligned ICs, followed by a three-step thinning process and copper damascene patterning to form inter-wafer interconnects. Daisy-chain inter-wafer via test structures and compatibility of the process steps with 130 nm CMOS sal devices and circuits indicate the viability of the process flow. Such 3D integration with through-die vias enables high functionality in intelligent wireless terminals, as vertical integration of processor, large memory, image sensors and RF/microwave transceivers can be achieved with silicon-based ICs (Si CMOS and/or SiGe BiCMOS). Two examples of such capability are highlighted: memory-intensive Si CMOS digital processors with large L2 caches and SiGe BiCMOS pipelined A/D converters. A comparison of wafer-level 3D integration 'lith system-on-a-chip (SoC) and system-in-a-package (SiP) implementations is presented.