• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.7
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• pp.675-678
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• 2015

In this paper, we proposed a multi-function conversion block for microwave receiver. The proposed multi-function conversion block is composed of a broadband voltage controlled oscillator and a dual-mode mixer. Depending on whether the bias voltage is supplied, the first IF(Intermediate Frequency) output frequency(4,595 MHz/6,045 MHz) needed in microwave receiver is converted to 720 MHz and the another IF output frequency(720 MHz) for receiving Ku-band has the multi-functional operations of the dual mode that are bypass and attenuation without frequency conversion. Implementation and measurement results show that each intermediate frequency has conversion loss characteristic according to the LO power. The LO power conversion loss of 4,595 MHz at the LO levels from 2 dBm to 4 dBm is 13 dB, another of 6,035 MHz is 12 dB and the other of 720 MHz is 7.0 dB.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.20 no.4
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• pp.129-133
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• 2020

In this paper, a temperature compensation circuit is presented in order to mitigate gain variability due to temperature in the W-band low-noise amplifier (LNA). The proposed cascode temperature compensation bias circuit automatically controls gate bias voltages of the common-source LNA in order to suppress variations of small-signal gain. The designed circuit was realized in a 100-nm GaAs pHEMT process. The simulated voltage gain of W-band LNA including the proposed bias circuit is >20 dB with gain variability less than ±0.8 dB in the range of temperatures between -35 to 71℃. We expect that the proposed circuit contributes to millimeter-wave receivers for stable performances in radar applications.

• Journal of IKEEE
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• v.14 no.4
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• pp.257-262
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• 2010

We design a CMOS front-end with wide variable gain and low power consumption for 5.25 GHz band. To obtain wide variable gain range, a p-type metal-oxide-semiconductor field-effect transistor (PMOS FET) in the low noise amplifier (LNA) section is connected in parallel. For a mixer, single balanced and folded structure is employed for low power consumption. Using this structure, the bias currents of the transconductance and switching stages in the mixer can be separated without using current bleeding path. The proposed front-end has a maximum gain of 33.2 dB with a variable gain range of 17 dB. The noise figure and third-order input intercept point (IIP3) are 4.8 dB and -8.5 dBm, respectively. For this operation, the proposed front-end consumes 7.1 mW at high gain mode, and 2.6 mW at low gain mode. The simulation results are performed using Cadence RF spectre with the Taiwan Semiconductor Manufacturing Company (TSMC) $0.18\;{\mu}m$ CMOS technology.)

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.9 no.1
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• pp.25-33
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• 1998

In this paper, we describe a single-gate MESFET mixer at PCS(Personal Communication Service) frequency band. The PCS frequency band is 1965~2025 MHz in FR and 140 MHz in IF irrespectly. The design of the mixer was executed by microwave simulator, EEsof Libra. The matching network is consisted of rectangular inductor, MIM capacitor and open stub. The ma- nufacture work was accomplished by the micro-pen and wedge-bonder. The mixer showed $6.69\pm0.65$ dB of conversion gain, $-14.9\pm3.5$dB of RF reflection coefficient and 57.83 dB of LO/IF isolation at 10 dBm of LO power when LO frequency is 1855 MHz. When this mixer is used at PCS terminal, IF-amplifier which compensates the conversion loss of diode mixer may be omitted.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.3
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• pp.278-284
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• 2010

In this paper, a millimeter-wave detector using zero-bias schottky diode is designed and fabricated at W-band. It consists of LNA(Low Noise Amplifier) and detector module to improve sensitivity. LNA case with a highly stop-band characteristic is designed to prevent the oscillation by LNA MMIC chip. Diode detector of planar structure is fabricated for the easy connection with LNA module and zero bias Schottky diode is utilized. In practice, the fabricated diode detector have shown the detection voltage of 20~500 mV to the RF input power of -45~-20 dBm. The proposed W-band detector can be applicable to the passive millimeter image system.

• Journal of Satellite, Information and Communications
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• v.7 no.1
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• pp.75-81
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• 2012

This study is to design the transmitter and receiver of short range UWB(Ultra Wide Band) imaging radar that is able to display high resolution radar image for front area of a UGV(Unmanned Ground Vehicle). This radar can help a UGV to navigate autonomously as it detects and avoids obstacles through foliage. The transmitter needs two transmitters to improve the azimuth resolution. Multi-channel receivers are required to synthesize radar image. Transmitter consists of high power amplifier, channel selection switch, and waveform generator. Receiver is composed of sixteen channel receivers, receiver channel converter, and frequency down converter, Before manufacturing it, the proposed architecture of transceiver is proved by modeling and simulation using several parameters. Then, it was manufactured by using industrial RF(Radio Frequency) components and all other measured parameters in the specification were satisfied as well.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2016.10a
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• pp.66-69
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• 2016

In this paper, we suggests a Ka-band LNB considering next-generation UHD satellite TVRO. Since Ka-band has grater attenuation than Ku-band in atmosphere, we designed the low-noise down-converter to improve receiving sensitivity and to extend a dynamic range of receiver. It aims to compensate a quality of ultra high definition transmission signal for rainfall. The low-noise block diagram consists of a three-staged amplifier (LNA), band-pass filter for deleting image (BPF), mixer and IF when considering nonlinear characteristics in the receiver RF front end module. Also, we showed a LNB through optimization processes affecting dynamic range directly in receiver FEM. Asa resuly of experiment, the gain of low-noise down-converter show between 58.5dB and 60.7dB, the noise figure has a high characteristic as 1.38dB. Finally, the phase noise of local oscillator is -63.10dBc at 100MHz offset frequency.