• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2003.11a
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• pp.163-167
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• 2003

In this paper, an air-suspension type RF MEMS inductor is fabricated, and an appropriate de-embedding scheme for 3-dimenstional MEMS structure is applied and verified with inductance calculation algorithm. With the presented de-embedding method, parasitics from contanct pads and feeding lines are effectively and accurately de-embedded using open and short calibration procedure, and only spiral and posts can be characterized as a high-Q inductor structure. The validity of the de-embedding method is verified by the comparison of the measured and calculated inductances of two 1.5 and 2.5 turn square spiral inductors. The open-short de-embedded inductance error is below 5% each case in comparison with the calculated value based on H.M. Greenhouse's algorithm.

• Journal of Advanced Marine Engineering and Technology
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• v.24 no.6
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• pp.139-146
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• 2000

The development of high performance materials is very important subject in order to enhance the properties of bearings whose role is to transfer energy harmoniously by reducing the problem of friction and wear down, etc. between the interacting solid surfaces in relative motion under high loads in comply with mechanical operating mechanism of engines. In this study, several (100-x)Al-xSn coating films (where x=85, 75, 65 atomic % at Al) on substrates which are abt. 2mm thickenss of Kelmet layer sintered back steel were prepared by using RF sputtering system. These coating films were observed the morphology by SEM(Scanning Electron Microscope) and investigated the crystal structure by XRD(X-ray Diffractor) for their properties. And friction coefficient of these films was measured by ball-on-disc tester for their tribological properties. From the experimental results, it was shown that high performance properties of bearing can be improved greatly by controlling the composition and morphology of material surface with effective use of the plasma-assisted sputtering process.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.259.2-259.2
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• 2014

Multi-crystal Silicon wafer를 대기압에서 리모트타입의 RF-DBD를 이용하여 에칭을 하였다. DBD소스의 전극으로 알루미늄을 사용하였고 유전체로는 알루미나를 사용하였다(전극 갭을 기록). 전원공급은 13.56 MHz RF 전원장치를 이용하였으며 아르곤과 SF6 유량을 변수로 하여 실험하였다. Ar 유량은 2~10 slm, SF6는 0.2~1 slm으로 변화를 주어 최적화 조건을 찾았다. 결론적으로 SF6의 유량이 증가할수록 Si 에칭율이 증가하였다. 그러나 SF6의 유량이 2 lm일 때 에칭율이 감소하였다. 그리고 scan time이 45초일 때 $2.3{\mu}m/min$로 최대 에칭율을 얻었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.509-512
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• 2001

Aluminum nitride(AlN) thin films were deposited on silicon substrates using RF magnetron sputtering at various deposition conditions and investigated the characteristics. It was used XRD, AES, SEM, and HP-4145B semiconductor parameter analyzer to analysis deposited AlN thin films. The deposition conditions for the good c-axis orientation were 100 W of RF power, $200^{\circ}C$ of substrate temperature and 15 mTorr of working pressure. The leakage current density was less then $1.3{\times}10^{-7}A/cm^{2}$. And it was also investigated the etching properties of deposited AlN thin films for application.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.193-197
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• 1996

BaTiO$_3$films in pure Ar atmosphere were prepared by RF sputtering method at low substrate temperature(100$^{\circ}C$). The structural and crystallographic properties were studied with deposition conditions and annealing methodes. Deposition rates and structural properties of BaTiO$_3$ thin filles were investigated by the SEM and X-ray diffraction. The chemical composition of BaTiO$_3$ thin films grown on Si(100) wafer was studied by tole EDS and EPHA. The optimised Ar pressure and RF power were 8[mtorr] and 180[W], respectively. The thickness of BaTiO$_3$ thin films deposited at optimised conditions was ∼3400[${\AA}$], and the dielectric constant of the thin films heat-treated at 750[$^{\circ}C$] for 1[hr] was 259.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.9
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• pp.776-780
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• 2000

ZnGa$_2$O$_4$thin films were prepared on Si(100) wafer in terms of RF power, substrate temperatures and Ar/O$_2$flow rate by RF Magnetron Sputtering. Photoluminescence(PL) measurement was employed to observe the emission spectra of ZnGa$_2$O$_4$films. The influences of various deposition parameters on the properties of grown films were studied. The optimum substrate deposition temperature for luminous characteristics was about 50$0^{\circ}C$ in this investigation. PL spectrum of ZnGa$_2$O$_4$ thin films showed broad band luminescence spectrum.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.160-163
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• 1994

Tungsten and Tungsten Nitride thin films deposited by RF and DC sputtering and the resistivity of these films was measured. We deposited tungsten and tungsten nitride films by RF and DC sputtering at various conditions and derived equations that determines the resistivity and sheet resistivity by stabilizing the basic theory. We investigated properties of the resistivity and sheet resistivity of theme films under various conditions like temperature of substrate, flow rate of the argon gas and content of nitrogen from nitrogen-argon mixtures

• Journal of the Korean Institute of Navigation
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• v.23 no.1
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• pp.15-22
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• 1999

In this paper, ferrite-rubber composite has been studied in order to apply to RF-A-PF in a super wideband electromagnetic absorber in RF-A-PF type, which can be used for a general purpose anechoic chamber. $Ni_x - Mn_0.1 - Zn_{(1-x-0.1)}ㆍFe_2O_4$ ferrite powder has been fabricated, then, using this, 〔$Ni_x - Mn_0.1 - Zn_{(1-x-0.1)}ㆍFe_2O_4$〕-Rubber composite for RF-layer in the RF-A-PF type absorber has been fabricated and it's characteristics have been analyzed. As a result, it has been clearly shown that the 〔$Ni_x - Mn_0.1 - Zn_{(1-x-0.1)}ㆍFe_2O_4$〕-Rubber composite has excellent electromagnetic wave absorbing properties.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.10
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• pp.436-440
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• 2003

The (S $r_{0.85}$C $a_{0.15}$)Ti $O_3$(SCT) thin films were deposited on Pt-coated electrode(Pt/TiN/ $SiO_2$/Si) using RF sputtering method according to the deposition condition. The optimum conditions of RF power and Ar/ $O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin films was about 18.75[$\AA$/min] at the optimum condition. The composition of SCT thin films deposited on Si substrate is close to stoichiometry (1.102 in A/B ratio). The capacitance characteristics had a stable value within $\pm$4[%]. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films were observed above 200[kHz]. SCT thin films used in this study showed the phenomena of dielectric relaxation with the increase of frequency.ncy.

• Korean Journal of Materials Research
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• v.16 no.7
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• pp.445-448
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• 2006

Highly c-axis oriented ZnO thin films were grown on Si(100)substrates with Zn buffer layers. Effects of the Zn buffer layer thickness on the structural and optical qualities of ZnO thin films were investigated using X-ray diffraction (XRD), photoluminescence (PL) and Atomic force microscopy (AFM) analysis techniques. It was confirmed that the quality of a ZnO thin film deposited by rf magnetron sputtering was substantially improved by using a Zn buffer layer. The highest ZnO film quality was obtained with a Zn buffer layer 110 nm thick. The surface roughness of the ZnO thin film increases as the Zn buffer layer thickness increases.