• Title/Summary/Keyword: RF 센서

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Design of Q-Band LC VCO and Injection Locking Buffer 77 GHz Automotive Radar Sensor (77 GHz 자동차용 레이더 센서 응용을 위한 Q-밴드 LC 전압 제어 발진기와 주입 잠금 버퍼 설계)

  • Choi, Kyu-Jin;Song, Jae-Hoon;Kim, Seong-Kyun;Cui, Chenglin;Nam, Sang-Wook;Kim, Byung-Sung
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.22 no.3
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    • pp.399-405
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    • 2011
  • In this paper, we present the design of Q-band LC VCO and injection locking buffer for 77 GHz automotive radar sensor using 130 nm RF CMOS process. To improve the phase noise characteristic of LC tank, the transmission line is used. The negative resistance by the active device cross-coupled pair of buffer is used for high output power, with or without oscillation of buffer. The measured phase noise is -102 dBc/Hz at 1 MHz offset frequency and tuning range is 34.53~35.07 GHz. The output power is higher than 4.1 dBm over entire tuning range. The fabricated chip size is $510{\times}130\;um^2$. The power consumption of LC VCO is 10.8 mW and injection locking buffer is 50.4 mW from 1.2 V supply.

Energy Efficient Clustering Algorithm for Surveillance and Reconnaissance Applications in Wireless Sensor Networks (무선 센서 네트워크에서 에너지 효율적인 감시·정찰 응용의 클러스터링 알고리즘 연구)

  • Kong, Joon-Ik;Lee, Jae-Ho;Kang, Jiheon;Eom, Doo-Seop
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.37C no.11
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    • pp.1170-1181
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    • 2012
  • Wireless Sensor Networks(WSNs) are used in diverse applications. In general, sensor nodes that are easily deployed on specific areas have many resource constrains such as battery power, memory sizes, MCUs, RFs and so on. Hence, first of all, the efficient energy consumption is strongly required in WSNs. In terms of event states, event-driven deliverly model (i.e. surveillance and reconnaissance applications) has several characteristics. On the basis of such a model, clustering algorithms can be mostly used to manage sensor nodes' energy efficiently owing to the advantages of data aggregations. Since a specific node collects packets from its child nodes in a network topology and aggregates them into one packet to relay them once, amount of transmitted packets to a sink node can be reduced. However, most clustering algorithms have been designed without considering can be reduced. However, most clustering algorithms have been designed without considering characteristics of event-driven deliverly model, which results in some problems. In this paper, we propose enhanced clustering algorithms regarding with both targets' movement and energy efficiency in order for applications of surveillance and reconnaissance. These algorithms form some clusters to contend locally between nodes, which have already detected certain targets, by using a method which called CHEW (Cluster Head Election Window). Therefore, our proposed algorithms enable to reduce not only the cost of cluster maintenance, but also energy consumption. In conclusion, we analyze traces of the clusters' movements according to targets' locations, evaluate the traces' results and we compare our algorithms with others through simulations. Finally, we verify our algorithms use power energy efficiently.

RF-PECVD로 성장시킨 $a-Si_{1-x}C_x:H$ 박막의 증착조건에 따른 광학적 특성 분석

  • 박문기;김용탁;홍병유
    • Proceedings of the Korean Vacuum Society Conference
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    • 2000.02a
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    • pp.76-76
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    • 2000
  • 최근 비정질 SiC 박막은 열과 광안정도면에서 비정질 Si 박막에 비해 우수하며 공정변수들을조절함으로써 비교적 쉽고 다양하게 광학적.전기적 특성을 얻을 수 있고, 낮은 광흡수계수 및 105($\Omega$cm)1 이상의 높은 전도도를 가지고 있어 Plasma Enhanced Chemical Vapor Deposition(PECVD)을 통해 가전자제어 (Valency electron control)가 가능한 비정질 SiC 박막이 제작된 이래 대한 많은 연구가 진행되고 있다. 결정성이 없는 비정질 물질은 상대적으로 낮은 온도에서 성장이 가능하며, 특히 glow-sidcharge 방식으로 저온에서 성장시킬 수 있음에 따라 유리등과 같은 다른 저렴한 물질을 기판으로 이용, 넓은 면적의 비정질 SiC 박막을 성장시켜 여러 분야의 소자에 응용되고 있다. 비정질 SiC 박막이 넓은 에너지띠 간격을 갖는 물질이라는 점과 화학적 안정성 및 높은 경도, 비정질성에 기인한 대면적 성장의 용이성 등의 장점이외에, 원자의 성분비 변화에 의해 에너지띠 간격(1.7~3.1eV)을 조절할 수 있다는 점은 광전소자의 응용에 큰 잠재성이 있음을 나타낸다. PECVD 방식으로 성장된 비정질 SiC 박막은 태양전지의 Window층이나 발광다이오드, 광센서, 광트랜지스터 등에 응용되어 오고 있다. 본 연구에서는, RF-PECVD(ULVAC CPD-6018) 방법에 의하여 비정질 Si1-xCx 박막을 2.73Torr의 고정된 압력에서 RF 전력(50~300W), 증착온도(150~30$0^{\circ}C$), 주입 가스량 (SiH4:CH4)등의 조건을 다양하게 변화시켜가며 증착된 막의 특성을 평가하였다. 성장된 박막을 X-ray Photoelectron Spectroscopy(XPS), UV-VIS spectrophotometer, Ellipsometry, Atomic Force Microscopy(AFM)등을 이용하여 광학적 밴드갭, 광흡수 계수, Tauc Plot, 그리고 파장대별 빛의 투과도의 변화를 분석하였으며 각 변수가 변화함에 따라 광학적 밴드갭의 변화를 정량적으로 조사함으로써 분자결합상태와 밴드갭과 광 흡수 계수간의상관관계를 규명하였고, 각 변수에 따른 표면의 조도를 확인하였다. 비정질 Si1-xCx 박막을 증착하여 특성을 분석한 결과 성장된 박막의 성장률은 Carbonfid의 증가에 따라 다른 성장특성을 보였고, Silcne(SiH4) 가스량의 감소와 함께 박막의 성장률이 둔화됨을 볼 수 있다. 또한 Silane 가스량이 적어지는 영역에서는 가스량의 감소에 의해 성장속도가 둔화됨을 볼 수 있다. 또한 Silane 가스량이 적어지는 영역에서는 가스량의 감소에 의해 성장속도가 줄어들어 성장률이 Silane가스량에 의해 지배됨을 볼 수 있다. UV-VIS spectrophotometer에 의한 비정질 SiC 박막의 투과도와 파장과의 관계에 있어 유리를 기판으로 사용했으므로 유리의투과도를 감안했으며, 유리에 대한 상대적인 비율 관계로 투과도를 나타냈었다. 또한 비저질 SiC 박막의 흡수계수는 Ellipsometry에 의해 측정된 Δ과 Ψ값을 이용하여 시뮬레이션한 결과로 비정질 SiC 박막의 두께를 이용하여 구하였다. 또한 Tauc Plot을 통해 박막의 optical band gap을 2.6~3.7eV로 조절할 수 있었다.

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Electrical properties of ZnO transparent conducting film fabricated by the sputtering method (스퍼터링법에 의한 ZnO 투명전도막의 제작과 전기적 특성)

  • Jeong, Woon-Jo;Cho, Jae-Cheol;Jeong, Yong-Kun;Yoo, Yong-Tek
    • Journal of Sensor Science and Technology
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    • v.6 no.1
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    • pp.49-55
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    • 1997
  • ZnO thin film had been deposited on the glass by sputtering method, and investigated by optical and electrical properties. When the rf power was 180W and sputtering pressure was $1{\times}10^{-3}$Torr at room temperature, thin lam deposited had strongly oriented c-axis and the lowest resistivity($1{\times}10^{-4}{\Omega}{\cdot}cm$), and then carrier concentration and Hall mobility were $6.27{\times}10^{20}cm^{-3}$ and $22.04cm^{2}/V{\cdot}s$, respectively. Transmittance of ZnO thin film in visible range was above 90%, and this thin film cut of the ultraviolet range below 320nm and the infrared range above 850nm. And after annealing in hydrogen atmosphere, the resistivity of ZnO thin film was somewhat decreased, while obtained as stable state.

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Pet Location Tracking and Remote Monitoring System using a Wireless Sensor Network (무선센서네트워크를 이용한 애완동물 위치추적 및 원격모니터링 시스템)

  • Hwang, Sung-Ho;Park, Jae-Choon;Kwon, Ki-Hyeon;Choi, Shin-Hyeong
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.12 no.1
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    • pp.351-356
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    • 2011
  • In this paper, we design a pet location tracking and remote monitoring system that uses ultrasonic, temperature, humidity and illumination sensors to study behavioral patterns and habits. Using ultrasonic waves to calculate distances, a WSN(Wireless Sensor Network) was constructed to transmit data at pet's location, such as temperature, humidity and illumination, to a sink mote. Data received by the system are stored in the database in real time to trace pet's location. Interference among transmitting motes was eliminated by sequentially transmitting RF beacons using sink mote's beacon as the reference signal. Experiments were performed with the laboratory prototype of a pet animal monitoring system implemented for this study. The system analyzes locations of a pet and displays movement patterns, areas of movement, temperature, humidity and illumination using a GUI (graphical user interface).

Fabrication of Pt Thin-film Type Microheater for Thermal Microsensors and Its Characteristics (열형 마이크로센서용 백금박막형 미세발열체의 제작과 그 특성)

  • 정귀상;홍석우
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.6
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    • pp.509-513
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    • 2000
  • The physical and electrical characteristics of MgO and Pt thin-films on it deposited by reactive sputtering and rf magnetron sputtering respectively were analyzed with annealing temperature and time by four point probe SEM and XRD. Under annealing conditions of 100$0^{\circ}C$ and 2 hr, MgO thin-film had the properties of improving Pt adhesion to SiO$_2$and insulation without chemical reaction to Pt thin-film and the sheet resistivity and the resistivity of Pt thin-film deposited on it were 0.1288 Ω/ and 12.88 $\mu$$\Omega$.cm respectively. We made Pt resistance pattern on SiO$_2$/Si substrate by life-off method and fabricated Pt thin-film type microheater for thermal microsensors by Pt-wire Pt-paste and SOG(spin-on-glass). In the temperature range of 25~40$0^{\circ}C$ we estimated TCR(temperature coefficient of resistance) and resistance ratio of thin-film type Pt-RTD(resistance thermometer device). We obtained TCR value of 3927 ppm/$^{\circ}C$ close to the bulk Pt value. Resistance values were varied linearly within the range of the measurement temperature. The thermal characteristics of fabricated thin-films type Pt micorheater were analyzed with Pt-RTD integrated on the same substrate. The heating temperature of Pt microheater could be up to 40$0^{\circ}C$ with 1.5 watts of the heating power.

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Fabrication of Silicon Window for Low-price Thermal Imaging System (저가형 열영상 시스템을 위한 실리콘 윈도우 제작)

  • Sung, Byung Mok;Jung, Dong Geon;Bang, Soon Jae;Baek, Sun Min;Kong, Seong Ho
    • Journal of Sensor Science and Technology
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    • v.24 no.4
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    • pp.264-269
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    • 2015
  • An infrared (IR) bolometer measures the change of resistance by absorbing incident IR radiation and generates a signal as a function of the radiation intensity. Since a bolometer requires temperature stabilization and light filtering except for the infrared rays, it is essential for the device to be packaged meeting conditions that above mentioned. Minimization of heat loss is needed in order to stabilize temperature of bolometer. Heat loss by conduction or convection requires a medium, so the heat loss will be minimized if the medium is a vacuum. Therefore, vacuum packaging for bolometer is necessary. Another important element in bolometer packaging is germanium (Ge) window, which transmits IR radiation to heat the bolometer. To ensure a complete transmittance of IR light, anti-reflection (AR) coatings are deposited on both sides of the window. Although the transmittance of Ge window is high for IR rays, it is difficult to use frequently in low-price IR bolometer because of its high price. In this paper, we fabricated IR window by utilizing silicon (Si) substrate instead of Ge in order to reduce the cost of bolometer packaging. To enhance the IR transmittance through Si substrate, it is textured using Reactive Ion Etching (RIE). The texturing process of Si substrate is performed along with the change of experimental conditions such as gas ratio, pressure, etching time and RF power.

Black Silicon of Pyramid Structure Formation According to the RIE Process Condition (RIE 공정 조건에 의한 피라미드 구조의 블랙 실리콘 형성)

  • Jo, Jun-Hwan;Kong, Dae-Young;Cho, Chan-Seob;Kim, Bong-Hwan;Bae, Young-Ho;Lee, Jong-Hyun
    • Journal of Sensor Science and Technology
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    • v.20 no.3
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    • pp.207-212
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    • 2011
  • In this study, pyramid structured black silicon process was developed in order to overcome disadvantages of using wet etching to texture the surface of single crystalline silicon and using grass/needle-like black silicon structure. In order to form the pyramidal black silicon structure on the silicon surface, the RIE system was modified to equip with metal-mesh on the top of head shower. The process conditions were : $SF_6/O_2$ gas flow 15/15 sccm, RF power of 200 W, pressure at 50 mTorr ~ 200 mTorr, and temperature at $5^{\circ}C$. The pressure did not affect the pyramid structure significantly. Increasing processing time increased the size of the pyramid, however, the size remained constant at 1 ${\mu}M$ ~ 2 ${\mu}M$ between 15 minutes ~ 20 minutes of processing. Pyramid structure of 1 ${\mu}M$ in size showed to have the lowest reflectivity of 7 % ~ 10 %. Also, the pyramid structure black silicon is more appropriate than the grass/needle-like black silicon when creating solar cells.

Chemiresistive Sensor Array Based on Semiconducting Metal Oxides for Environmental Monitoring

  • Moon, Hi Gyu;Han, Soo Deok;Kang, Min-Gyu;Jung, Woo-Suk;Jang, Ho Won;Yoo, Kwang Soo;Park, Hyung-Ho;Kang, Chong Yun
    • Journal of Sensor Science and Technology
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    • v.23 no.1
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    • pp.15-18
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    • 2014
  • We present gas sensing performance based on $2{\times}2$ sensor array with four different elements ($TiO_2$, $SnO_2$, $WO_3$ and $In_2O_3$ thin films) fabricated by rf sputter. Each thin film was deposited onto the selected $SiO_2$/Si substrate with Pt interdigitated electrodes (IDEs) of $5{\mu}m$ spacing which were fabricated on a $SiO_2$/Si substrate using photolithography and dry etching. For 5 ppm $NO_2$ and 50 ppm CO, each thin film sensor has a different response to offers the distinguishable response pattern for different gas molecules. Compared with the conventional micro-fabrication technology, $2{\times}2$ sensor array with such remarkable response pattern will be open a new foundation for monolithic integration of high-performance chemoresistive sensors with simplicity in fabrication, low cost, high reliablity, and multifunctional smart sensors for environmental monitoring.

Improvement of Surface-enhanced Raman Spectroscopy Response Characteristics of Nanoporous Ag Metal Thin Film with Surface Texture Structures (표면 요철구조를 적용한 나노 다공성 Ag 금속박막의 SERS 응답 특성 개선)

  • Kim, Hyeong Ju;Kim, Bonghwan;Lee, Dongin;Lee, Bong-Hee;Cho, Chanseob
    • Journal of Sensor Science and Technology
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    • v.29 no.4
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    • pp.255-260
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    • 2020
  • In this study, we developed a method of improving the surface-enhanced Raman spectroscopy (SERS) response characteristics by depositing a nanoporous Ag metal thin film through cluster source sputtering after forming a pyramidal texture structure on the Si substrate surface. A reactive ion etching (RIE) system with a metal mesh inside the system was used to form a pyramidal texture structure on the Si surface without following a complicated photolithography process, unlike in case of the conventional RIE system. The size of the texture structure increased with the RIE process time. However, after a process time of 60 min, the size of the structure did not increase but tended to saturate. When the RF power increased from 200 to 250 W, the size of the pyramidal texture structure increased from 0.45 to 0.8 ㎛. The SERS response characteristics were measured by depositing approximately 1.5 ㎛ of nanoporous Ag metal thin film through cluster sputtering on the formed texture structure by varying the RIE process conditions. The Raman signal strength of the nanoporous Ag metal thin film deposited on the Si substrate with the texture structure was higher than that deposited on the general silicon substrate by up to 19%. The Raman response characteristics were influenced by the pyramid size and the number of pyramids per unit area but appeared to be influenced more by the number of pyramids per unit area. Therefore, further studies are required in this regard.